NTE2969 MOSFET N−Channel, Enhancement Mode High Speed Switch TO3P Type Package Description: The NTE2969 is an N−channel enhancement mode power field effect transistor in a TO3P type package especially tailored to minimize on−state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. This device is well suited for use in applications such as a high efficiency switch mode power supply or an electronic lamp ballast on half bridge. D Features: D 30A, 400V, RDS(on) = 0.14+ @ VGS = 10V D Low gate Charge (90nC Typ) D Low Crss (60pF Typ) D Fast Switching G D 100% Avalanche Tested D Improved dv/dt Capability S Absolute Maximum Ratings: (TC = +255C unless otherwise specified) Drain−Source Voltage, VDSS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 400V Drain Current, ID Continuous TC = +255C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30A TC = +1005C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19A Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 120A Gate−Source Voltage, VGS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +30V Gate Current (Pulsed), IGM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +1.5A Single Pulsed Avalanche Energy (Note 2), EAS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1400mJ Avalanche Current (Note 1), IAS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30A Repetitive Avalanche Energy (Note 1), EAR . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 29mJ Peak Diode Recovery dv/dt (Note 3), dv/dt . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4.5V/ns Total Power Dissipation (TC = +255C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 290W Derate Above 255C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.33W/5C Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −555 to +1505C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −555 to +1505C Maximum Lead Temperature (During Soldering, 1/8” from case, 5sec), TL . . . . . . . . . . . . . . +3005C Thermal Resistance: Maximum Junction−to−Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.435C/W Typical Case−to−Sink, RthCS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.245C/W Maximum Junction−to−Ambient, RthJA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 405C/W Note 1. Repetitive Rating: Pulse width limited by maximum junction temperature. Note 2. L = 2.7mH, IAS = 30A, VDD = 50V, RG = 27+ , Starting TJ = +255C. Note 3. ISD 3 30A, di/dt 3 200A/3s, VDD 3 BVDSS, Starting TJ = +255C. Rev. 10−13 Electrical Characteristics: (TC = +255C unless otherwise specified) Parameter Symbol Test Conditions Min Typ Max Unit 400 − − V Breakdown Voltage Temperature DBV/DTJ ID = 2503A, Referenced to +255C Coefficient − 0.4 − V/5C Zero Gate Voltage Drain Current VDS = 400V, VGS = 0 − − 1 3A VDS = 320V, TC = +1255C − − 10 3A OFF Characteristics Drain−Source Breakdown Voltage BVDSS IDSS VGS = 0V, ID = 2503A Gate−Source Leakage Forward IGSSF VGS = 30V, VDS = 0V − − 100 nA Gate−Source Leakage Reverse IGSSR VGS = −30V, VDS = 0V − − −100 nA Gate Threshold Voltage VGS(th) VDS = VGS, ID = 2503A 3.0 − 5.0 V Static Drain−Source ON Resistance RDS(on) VGS = 10V, ID = 12.5A − 0.107 0.14 + gfs VDS = 50V, ID = 15A, Note 4 − 20 − mhos Input Capacitance Ciss VGS = 0V, VDS = 25V, f = 1MHz − 3400 4400 pF Output Capacitance Coss − 580 750 pF Reverse Transfer Capacitance Crss − 60 80 pF − 80 170 ns − 320 650 ns td(off) − 190 390 ns tf − 170 350 ns − 90 120 nC − 22 − nC − 46 − nC ON Characteristics Forward Transconductance Dynamic Characteristics Switching Characteristics Turn−On Delay Time Rise Time Turn−Off Delay Time Fall Time td(on) tr Total Gate Charge Qg Gate−Source Charge Qgs Gate−Drain (“Miller”) Charge Qgd VDD = 200V, ID = 30A, RG = 25+ , Note 4, Note 5 VGS = 10V, ID = 30A, VDS = 320V, Note 4, Note 5 Source−Drain Diode Ratings and Characteristics Continuous Source Current IS (Body Diode) − − 30 A Pulse Source Current ISM (Body Diode) − − 120 A Diode Forward Voltage VSD IS = 30A, VGS = 0V − − 1.5 V Reverse Recovery Time trr − 370 − ns Reverse Recovery Charge Qrr VGS = 0V, IS = 30A, dIF/dt = 100A/3s, Note 4 − 3.9 − 3C Note 1. Repetitive Rating: Pulse width limited by maximum junction temperature. Note 4. Pulse Test: Pulse Width 3 3003s, Duty Cycle 3 2%. Note 5. Essentially independent of operating temperature. .190 (4.82) .787 (20.0) .615 (15.62) .591 (15.02) .126 (3.22) Dia .787 (20.0) G D S .215 (5.47)