NTE2395 MOSFET N–Ch, Enhancement Mode High Speed Switch Features: D Dynamic dv/dt Rating D +175°C Operating Temperature D Fast Switching D Ease of Paralleling D Simple Drive Requirements Absolute Maximum Ratings: Continuous Drain Current (VGS = 10V), ID TC = +25°C (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50A TC = +100°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 36A Pulsed Drain Current (Note 2), IDM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200A Power Dissipation (TC = +25°C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 150W Derate Linearly Above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.0W/°C Gate–to–Source Voltage, VGS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ±20V Single Pulse Avalanche Energy (Note 3), EAS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100mJ Peak Diode Recovery dv/dt (Note 4), dv/dt . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4.5V/ns Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +175°C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +175°C Lead Temperature (During Soldering, 1.6mm from case for 10sec), TL . . . . . . . . . . . . . . . . . +300°C Mounting Torque (6–32 or M3 Screw) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 lbfin (1.1Nm) Thermal Resistance, Junction–to–Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.0°C/W Thermal Resistance, Junction–to–Ambient, RthJA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 62°C/W Typical Thermal Resistance, Case–to–Sink (Flat, Greased Surface), RthCS . . . . . . . . . . . . 0.5°C/W Note Note Note Note 1. 2. 3. 4. Current limited by the package, (Die Current = 51A). Repetitive rating; pulse width limited by maximum junction temperature. VDD = 25V, starting TJ = +25°C, L = 44µH, RG = 25Ω, IAS = 51A ISD ≤ 51A, di/dt ≤ 250A/µs, VDD ≤ V(BR)DSS, TJ ≤ +175°C Electrical Characteristics: (TJ = +25°C unless otherwise specified) Parameter Symbol Test Conditions Drain–to–Source Breakdown Voltage V(BR)DSS Breakdown Voltage Temp. Coefficient ∆V(BR)DSS Reference to +25°C, ID = 1mA ∆TJ VGS = 0V, ID = 250µA Min Typ Max Unit 60 – – V – 0.060 – V/°C – – 0.028 Ω Static Drain–to–Source On–Resistance RDS(on) VGS = 10V, ID = 31A, Note 5 Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250µA 2.0 – 4.0 V VDS = 25V, ID = 31A, Note 5 15 – – mhos VDS = 60V, VGS = 0V – – 25 µA VDS = 48V, VGS = 0V, TJ = +125°C – – 250 µA Forward Transconductance Drain–to–Source Leakage Current gfs IDSS Gate–to–Source Forward Leakage IGSS VGS = 20V – – 100 nA Gate–to–Source Reverse Leakage IGSS VGS = –20V – – –100 nA ID = 51A, VDS = 48V, VGS = 10V, Note 5 – – 67 nC – – 18 nC – – 25 nC – 14 – ns – 110 – ns td(off) – 45 – ns tf – 92 – ns Between lead, .250in. (6.0) mm from package and center of die contact – 4.5 – nH – 7.5 – nH VGS = 0V, VDS = 25V, f = 1MHz – 1900 – pF Total Gate Charge Qg Gate–to–Source Charge Qgs Gate–to–Drain (“Miller”) Charge Qgd Turn–On Delay Time td(on) Rise Time tr Turn–Off Delay Time Fall Time VDD = 30V, ID = 51A, RG = 9.1Ω, RD = 0.55Ω, Ω Note 5 Internal Drain Inductance LD Internal Source Inductance LS Input Capacitance Ciss Output Capacitance Coss – 920 – pF Reverse Transfer Capaticance Crss – 170 – pF Source–Drain Ratings and Characteristics: Parameter Symbol Continuous Source Current (Body Diode) IS Pulsed Source Current (Body Diode) Test Conditions Min Typ Max Unit Note 1 – – 50 A ISM Note 2 – – 200 A Diode Forward Voltage VSD TJ = +25°C, IS = 51A, VGS = 0V, Note 5 – – 2.5 V Reverse Recovery Time trr – 120 180 ns Reverse Recovery Charge Qrr TJ = +25°C, IF = 51A, di/dt = 100A/µs, Note 5 – 0.53 0.80 µC Forward Turn–On Time ton Intrinsic turn–on time is neglegible (turn–on is dominated by LS+LD) Note 1. Current limited by the package, (Die Current = 51A). Note 2. Repetitive rating; pulse width limited by maximum junction temperature. Note 5. Pulse width ≤ 300µs; duty cycle ≤ 2%. .420 (10.67) Max .110 (2.79) .147 (3.75) Dia Max .500 (12.7) Max .250 (6.35) Max .500 (12.7) Min .070 (1.78) Max Gate .100 (2.54) Source Drain/Tab