NTE2956 MOSFET N−Channel, Enhancement Mode High Speed Switch TO−220 Full Pack Type Package Features: D RDS(on) = 380mW Max @ VGS = 10V, ID = 8A D Low Gate Charge: 32nC Typ D Low CRSS: 20pF Typ D 100% Avalanche Tested Applications: D LCD/LED/PDP TV D Lighting D Uninterruptible Power Supply D G S Absolute Maximum Ratings: (TC = +25C unless otherwise specified) Drain−Source Voltage, VDSS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500V Gate−Source Voltage, VGSS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30V Drain Current (Note 1), ID Continuous TC = +25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16A TC = +100C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9.6A Pulsed (Note 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 64A Single Pulsed Avalanche Energy (Note 3), EAS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 780mJ Avalanche Current (Note 2), IAR . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16A Repetitive Avalanche Energy (Note 2), EAR . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20mJ Peak Diode Recovery dv/dt (Note 4), dv/dt . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4.5V/ns Power Dissipation (TC = +25C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 38.5W Derate Above +25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.3W/C Operating Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −55 to +150C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −55 to +150C Maximum Lead temperature (During Soldering, 1/8” from case, 5 sec ), TL . . . . . . . . . . . . . . +300C Maximum Thermal Resistance, Junction−to−Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3.3C/W Maximum Thermal Resistance, Junction−to−Ambient, RthJA . . . . . . . . . . . . . . . . . . . . . . . . 62.5C/W Note Note Note Note 1. 2. 3. 4. Drain current limited by maximum junction temperature. Repetitive rating; pulse width limited by maximum junction temperature. L = 5.5mH, IAS = 16A, VDD = 50V, RG = 25W, starting TJ = +25C. ISD 16A, di/dt 200A/ms, VDD V(BR)DSS, starting TJ = +25C. Rev. 7−14 Electrical Characteristics: (TC = +25C unless otherwise specified) Parameter Symbol Test Conditions Min Typ Max Unit 500 − − V − 0.5 − V/_C VDS = 500V, VGS = 0 − − 1.0 mA VDS = 400V, TC = +125_C − − 10 mA IGSS VGS = 30V, VDS = 0V − − 100 nA Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250mA 3.0 − 5.0 V Static Drain−Source ON Resistance RDS(on) VGS = 10V, ID = 8A − 0.31 0.38 W gFS VDS = 40V, ID = 8A − 23 − S Input Capacitance Ciss − 1495 1945 pF Output Capacitance Coss VGS = 0V, VDS = 25V, f = 1MHz − 235 310 pF Reverse Transfer Capacitance Crss − 20 30 pF − 40 90 ns − 150 310 ns td(off) − 65 140 ns tf − 80 170 ns − 32 45 nC − 8.5 − nC − 14 − nC IS − − 9.2 A Maximum Pulsed Drain-Source Diode Forward Current ISM − − 37 A Drain−Source Diode Forward Voltage VSD VGS = 0V, IS = 16A − − 1.4 V Reverse Recovery Time trr − 490 − ns Reverse Recovery Charge Qrr VGS = 0V, IS = 16A, dIF/dt = 100A/ms − 5.0 − mC OFF Characteristics Drain−Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate−Body Leakage Current V(BR)DSS VGS = 0V, ID = 250mA DV(BR)DSS/DTJ ID = 250mA, Referenced to +25_C IDSS ON Characteristics Forward Transconductance Dynamic Characteristics Switching Characteristics Turn−On Delay Time Rise Time Turn−Off Delay Time Fall Time td(on) tr Total Gate Charge Qg Gate−Source Charge Qgs Gate−Drain Charge Qgd VDD = 250V, ID = 16A, RG = 25W, Note 5 VDD = 400V, ID = 16A, VGS = 10V, Note 5 Drain−Source Diode Characteristics and Maximum Ratings Maximum Continuous Drain-Source Diode Forward Current Note 5. Essentially independent of operating temperature typical characteristics. .177 (4.5) .394 (10.0) .108 (2.75) .169 (4.3) .335 (8.5) Isol .590 (15.0) G D S .150 (3.8) .532 (13.5) Min .100 (2.54) .090 (2.3)