2956

NTE2956
MOSFET
N−Channel, Enhancement Mode
High Speed Switch
TO−220 Full Pack Type Package
Features:
D RDS(on) = 380mW Max @ VGS = 10V, ID = 8A
D Low Gate Charge: 32nC Typ
D Low CRSS: 20pF Typ
D 100% Avalanche Tested
Applications:
D LCD/LED/PDP TV
D Lighting
D Uninterruptible Power Supply
D
G
S
Absolute Maximum Ratings: (TC = +25C unless otherwise specified)
Drain−Source Voltage, VDSS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500V
Gate−Source Voltage, VGSS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30V
Drain Current (Note 1), ID
Continuous
TC = +25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16A
TC = +100C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9.6A
Pulsed (Note 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 64A
Single Pulsed Avalanche Energy (Note 3), EAS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 780mJ
Avalanche Current (Note 2), IAR . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16A
Repetitive Avalanche Energy (Note 2), EAR . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20mJ
Peak Diode Recovery dv/dt (Note 4), dv/dt . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4.5V/ns
Power Dissipation (TC = +25C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 38.5W
Derate Above +25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.3W/C
Operating Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −55 to +150C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −55 to +150C
Maximum Lead temperature (During Soldering, 1/8” from case, 5 sec ), TL . . . . . . . . . . . . . . +300C
Maximum Thermal Resistance, Junction−to−Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3.3C/W
Maximum Thermal Resistance, Junction−to−Ambient, RthJA . . . . . . . . . . . . . . . . . . . . . . . . 62.5C/W
Note
Note
Note
Note
1.
2.
3.
4.
Drain current limited by maximum junction temperature.
Repetitive rating; pulse width limited by maximum junction temperature.
L = 5.5mH, IAS = 16A, VDD = 50V, RG = 25W, starting TJ = +25C.
ISD  16A, di/dt  200A/ms, VDD  V(BR)DSS, starting TJ = +25C.
Rev. 7−14
Electrical Characteristics: (TC = +25C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
500
−
−
V
−
0.5
−
V/_C
VDS = 500V, VGS = 0
−
−
1.0
mA
VDS = 400V, TC = +125_C
−
−
10
mA
IGSS
VGS = 30V, VDS = 0V
−
−
100
nA
Gate Threshold Voltage
VGS(th)
VDS = VGS, ID = 250mA
3.0
−
5.0
V
Static Drain−Source ON Resistance
RDS(on)
VGS = 10V, ID = 8A
−
0.31
0.38
W
gFS
VDS = 40V, ID = 8A
−
23
−
S
Input Capacitance
Ciss
−
1495
1945
pF
Output Capacitance
Coss
VGS = 0V, VDS = 25V,
f = 1MHz
−
235
310
pF
Reverse Transfer Capacitance
Crss
−
20
30
pF
−
40
90
ns
−
150
310
ns
td(off)
−
65
140
ns
tf
−
80
170
ns
−
32
45
nC
−
8.5
−
nC
−
14
−
nC
IS
−
−
9.2
A
Maximum Pulsed Drain-Source Diode
Forward Current
ISM
−
−
37
A
Drain−Source Diode Forward Voltage
VSD
VGS = 0V, IS = 16A
−
−
1.4
V
Reverse Recovery Time
trr
−
490
−
ns
Reverse Recovery Charge
Qrr
VGS = 0V, IS = 16A,
dIF/dt = 100A/ms
−
5.0
−
mC
OFF Characteristics
Drain−Source Breakdown Voltage
Breakdown Voltage Temperature Coefficient
Zero Gate Voltage Drain Current
Gate−Body Leakage Current
V(BR)DSS
VGS = 0V, ID = 250mA
DV(BR)DSS/DTJ ID = 250mA, Referenced to +25_C
IDSS
ON Characteristics
Forward Transconductance
Dynamic Characteristics
Switching Characteristics
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
td(on)
tr
Total Gate Charge
Qg
Gate−Source Charge
Qgs
Gate−Drain Charge
Qgd
VDD = 250V, ID = 16A,
RG = 25W, Note 5
VDD = 400V, ID = 16A,
VGS = 10V, Note 5
Drain−Source Diode Characteristics and Maximum Ratings
Maximum Continuous Drain-Source Diode
Forward Current
Note 5. Essentially independent of operating temperature typical characteristics.
.177 (4.5)
.394 (10.0)
.108
(2.75)
.169
(4.3)
.335
(8.5)
Isol
.590
(15.0)
G
D
S
.150
(3.8)
.532
(13.5)
Min
.100 (2.54)
.090 (2.3)