SiZ914DT Vishay Siliconix Dual N-Channel 30 V (D-S) MOSFETs FEATURES PRODUCT SUMMARY VDS (V) Channel-1 30 Channel-2 30 RDS(on) () (Max.) ID (A)g 0.00640 at VGS = 10 V 16a 0.01000 at VGS = 4.5 V 16a 0.00137 at VGS = 10 V 40a 0.00194 at VGS = 4.5 V 40a Qg (Typ.) 7.2 nC 30.1 nC PowerPAIR® 6 x 5 Pin 1 G1 1 5 mm D1 2 D1 D1 3 • TrenchFET® Gen IV Power MOSFETs • 100 % Rg and UIS Tested • Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 APPLICATIONS • • • • • D1 CPU Core Power Computer/Server Peripherals Synchronous Buck Converter POL Telecom DC/DC D1 G1 N-Channel 1 MOSFET S1/D2 4 G2 S1/D2 Pin 9 S2 8 7 N-Channel 2 MOSFET 6 mm 6 Schottky Diode G2 5 S2 Ordering Information: SiZ914DT-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) Parameter Symbol VDS VGS Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 °C) TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C ID Continuous Source Drain Diode Current TC = 25 °C TA = 25 °C IS Single Pulse Avalanche Current Single Pulse Avalanche Energy L = 0.1 mH IAS EAS Maximum Power Dissipation TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C PD Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature)d, e Channel-2 30 + 20, - 16 a IDM Pulsed Drain Current (t = 100 µs) Channel-1 V a 16 16a 16a, b, c 15.5b, c 80 19 3.25b, c 10 5 22.7 14.5 3.9b, c 2.5b, c TJ, Tstg Unit 40 40a 40a, b, c 38.8b, c 100 28 4.3b, c 20 20 100 64 5.2b, c 3.3b, c - 55 to 150 260 A mJ W °C THERMAL RESISTANCE RATINGS Channel-1 Parameter Symbol RthJA RthJC Typ. Max. Channel-2 Typ. Max. Unit t 10 s 25 32 19 24 Maximum Junction-to-Ambientb, f °C/W 4.4 5.5 1 1.25 Maximum Junction-to-Case (Drain) Steady State Notes: a. Package limited b. Surface mounted on 1" x 1" FR4 board. c. t = 10 s. d. See solder profile (www.vishay.com/doc?73257). The PowerPAIR is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components. f. Maximum under steady state conditions is 62 °C/W for channel-1 and 55 °C/W for channel-2. g. TC = 25 °C. Document Number: 62905 S13-2181-Rev. A, 14-Oct-13 For technical questions, contact: [email protected] www.vishay.com 1 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiZ914DT Vishay Siliconix SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) Parameter Symbol Test Conditions Min. Typ. Max. Unit Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate Source Leakage Zero Gate Voltage Drain Current On-State Drain Currentb Drain-Source On-State Resistanceb Forward Transconductanceb VDS VGS(th) IGSS IDSS ID(on) RDS(on) gfs VGS = 0 V, ID = 250 µA Ch-1 30 VGS = 0 V, ID = 250 µA Ch-2 30 VDS = VGS, ID = 250 µA Ch-1 1.2 2.4 VDS = VGS, ID = 250 µA Ch-2 1 2.4 V Ch-1 ± 100 Ch-2 ± 100 VDS = 30 V, VGS = 0 V Ch-1 1 VDS = 0 V, VGS = ± 20 V, - 16 V VDS = 30 V, VGS = 0 V Ch-2 VDS = 30 V, VGS = 0 V, TJ = 55 °C Ch-1 VDS = 30 V, VGS = 0 V, TJ = 55 °C Ch-2 VDS 5 V, VGS = 10 V Ch-1 20 VDS 5 V, VGS = 10 V Ch-2 25 VGS = 10 V, ID = 19 A Ch-1 VGS = 10 V, ID = 20 A Ch-2 0.00114 0.00137 VGS = 4.5 V, ID = 15 A Ch-1 0.00800 0.01000 VGS = 4.5 V, ID = 20 A Ch-2 0.00155 0.00194 VDS = 10 V, ID = 19 A Ch-1 55 VDS = 10 V, ID = 20 A Ch-2 68 Ch-1 1208 Ch-2 5603 60 240 V nA µA 5 0.5 5 mA A 0.00530 0.00640 S Dynamica Input Capacitance Ciss Output Capacitance Coss Channel-1 VDS = 15 V, VGS = 0 V, f = 1 MHz Reverse Transfer Capacitance Crss Channel-2 VDS = 15 V, VGS = 0 V, f = 1 MHz Qg Gate-Drain Charge Output Charge Gate Resistance Qoss Rg pF 30 168 Ch-1 0.025 0.050 Ch-2 0.032 0.064 VDS = 15 V, VGS = 10 V, ID = 20 A Ch-1 17 26 VDS = 15 V, VGS = 10 V, ID = 20 A Ch-2 66 99 Ch-1 7.2 11 Ch-2 30.1 45.2 Qgs Qgd 2202 Ch-2 Channel-1 VDS = 15 V, VGS = 4.5 V, ID = 20 A Gate-Source Charge 375 Ch-2 Ch-1 Crss/Ciss Ratio Total Gate Charge Ch-1 Channel-2 VDS = 15 V, VGS = 4.5 V, ID = 20 A VDS = 15 V, VGS = 0 V f = 1 MHz Ch-1 3.6 Ch-2 10.9 Ch-1 0.94 Ch-2 3.8 Ch-1 10 Ch-2 nC 60 Ch-1 0.5 2.5 5 Ch-2 0.2 1 2 Notes: a. Guaranteed by design, not subject to production testing. b. Pulse test; pulse width 300 µs, duty cycle 2 %. www.vishay.com 2 For technical questions, contact: [email protected] Document Number: 62905 S13-2181-Rev. A, 14-Oct-13 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiZ914DT Vishay Siliconix SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) Parameter Symbol Test Conditions Min. Typ. Max. Ch-1 16 24 Ch-2 40 60 Ch-1 11 20 Ch-2 127 190 Ch-1 15 23 Ch-2 40 60 Ch-1 5 10 Unit Dynamica td(on) Turn-On Delay Time tr Rise Time td(off) Turn-Off Delay Time tf Fall Time td(on) Turn-On Delay Time tr Rise Time Fall Time Channel-2 VDD = 15 V, RL = 1.5 ID 10 A, VGEN = 4.5 V, Rg = 1 Channel-1 VDD = 15 V, RL = 1.5 ID 10 A, VGEN = 10 V, Rg = 1 tf Channel-2 VDD = 15 V, RL = 1.5 ID 10 A, VGEN = 10 V, Rg = 1 IS TC = 25 °C td(off) Turn-Off Delay Time Channel-1 VDD = 15 V, RL = 1.5 ID 10 A, VGEN = 4.5 V, Rg = 1 Ch-2 19 29 Ch-1 10 20 Ch-2 12 20 Ch-1 10 20 Ch-2 30 45 Ch-1 20 30 Ch-2 35 53 Ch-1 5 10 Ch-2 7 14 ns Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current Pulse Diode Forward Current (t = 100 µs) ISM VSD Body Diode Voltage 40 Ch-2 40 Ch-1 80 Ch-2 Ch-1 0.8 1.2 IS = 2 A, VGS = 0 V Ch-2 0.33 0.42 Ch-1 15 23 Ch-2 62 93 Body Diode Reverse Recovery Charge Qrr Channel-1 IF = 10 A, dI/dt = 100 A/µs, TJ = 25 °C Reverse Recovery Fall Time ta Channel-2 IF = 10 A, dI/dt = 100 A/µs, TJ = 25 °C Reverse Recovery Rise Time tb A 100 IS = 10 A, VGS = 0 V trr Body Diode Reverse Recovery Time Ch-1 Ch-1 4 8 Ch-2 96 144 Ch-1 9 Ch-2 30.5 Ch-1 6 Ch-2 31.5 V ns nC ns Notes: a. Guaranteed by design, not subject to production testing. b. Pulse test; pulse width 300 µs, duty cycle 2 %. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. Document Number: 62905 S13-2181-Rev. A, 14-Oct-13 For technical questions, contact: [email protected] www.vishay.com 3 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiZ914DT Vishay Siliconix CHANNEL-1 TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 80 5 VGS = 10 V thru 5 V ID - Drain Current (A) ID - Drain Current (A) 4 VGS = 4 V 60 40 3 TC = 25 °C 2 20 1 TC = 125 °C VGS = 3 V TC = - 55 °C 0 0 0 0.5 1 1.5 0 2 0.6 1.2 1.8 2.4 3 VGS - Gate-to-Source Voltage (V) VDS - Drain-to-Source Voltage (V) Output Characteristics Transfer Characteristics 1350 0.0150 Ciss 1080 C - Capacitance (pF) RDS(on) - On-Resistance (Ω) 0.0120 VGS = 4.5 V 0.0090 VGS = 10 V 0.0060 810 540 Coss 270 0.0030 Crss 0 0.0000 0 14 28 42 56 0 70 5 ID - Drain Current (A) On-Resistance vs. Drain Current 15 20 Capacitance 1.7 10 ID = 19 A RDS(on) - On-Resistance (Normalized) ID = 19 A VGS - Gate-to-Source Voltage (V) 10 VDS - Drain-to-Source Voltage (V) VDS = 15 V 8 6 VDS = 8 V VDS = 24 V 4 2 VGS = 10 V 1.45 VGS = 4.5 V 1.2 0.95 0.7 0 0 5 10 15 Qg - Total Gate Charge (nC) Gate Charge www.vishay.com 4 20 - 50 - 25 0 25 50 75 100 125 150 TJ - Junction Temperature (°C) On-Resistance vs. Junction Temperature For technical questions, contact: [email protected] Document Number: 62905 S13-2181-Rev. A, 14-Oct-13 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiZ914DT Vishay Siliconix CHANNEL-1 TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 0.02 100 RDS(on) - On-Resistance (Ω) IS - Source Current (A) ID = 19 A TJ = 150 °C 10 TJ = 25 °C 1 0.015 TJ = 125 °C 0.01 TJ = 25 °C 0.005 0.1 0 0.0 0.2 0.4 0.6 0.8 1.0 1.2 0 2 4 6 8 10 VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V) Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage 70 2.1 56 Power (W) VGS(th) (V) 1.8 ID = 250 μA 1.5 42 28 1.2 14 0 0.001 0.9 - 50 - 25 0 25 50 75 100 125 150 0.01 0.1 1 10 TJ - Temperature (°C) Time (s) Threshold Voltage Single Pulse Power, Junction-to-Ambient Limited by IDM 100 ID limited ID - Drain Current (A) 10 100 μs 1 ms 1 Limited by RDS(on)* 10 ms 100 ms 1s 10 s 0.1 DC TA = 25 °C Single Pulse BVDSS Limited 0.01 0.1 1 10 100 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified Safe Operating Area, Junction-to-Ambient Document Number: 62905 S13-2181-Rev. A, 14-Oct-13 For technical questions, contact: [email protected] www.vishay.com 5 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiZ914DT Vishay Siliconix CHANNEL-1 TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 30 52 24 Power (W) ID - Drain Current (A) 39 26 13 18 12 6 0 0 0 25 50 75 100 125 0 150 25 50 TC - Case Temperature (°C) 75 100 125 150 TC - Case Temperature (°C) Power, Junction-to-Case Current Derating* 2.5 Power (W) 2.0 1.5 1.0 0.5 0.0 0 25 50 75 100 125 150 TA - Ambient Temperature (°C) Power, Junction-to-Ambient * The power dissipation PD is based on TJ(max.) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. www.vishay.com 6 For technical questions, contact: [email protected] Document Number: 62905 S13-2181-Rev. A, 14-Oct-13 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiZ914DT Vishay Siliconix CHANNEL-1 TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 0.0001 0.001 0.01 0.1 1 10 100 1000 Square Wave Pulse Duration (s) Normalized Effective Transient Thermal Impedance Normalized Thermal Transient Impedance, Junction-to-Ambient 1 Duty Cycle = 0.5 0.2 0.1 0.05 0.02 Single Pulse 0.1 0.0001 0.001 0.01 0.1 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Case Document Number: 62905 S13-2181-Rev. A, 14-Oct-13 For technical questions, contact: [email protected] www.vishay.com 7 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiZ914DT Vishay Siliconix CHANNEL-2 TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 5 80 VGS = 10 V thru 4 V 4 ID - Drain Current (A) ID - Drain Current (A) 60 VGS = 3 V 40 20 TC = 25 °C 3 2 1 0 0 0.5 1 1.5 TC = 125 °C TC = - 55 °C 0 2 0 0.6 1.2 1.8 2.4 3 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Output Characteristics Transfer Characteristics 8000 0.002 6000 C - Capacitance (pF) RDS(on) - On-Resistance (Ω) 0.0025 VGS = 4.5 V 0.0015 VGS = 10 V 0.001 Ciss 4000 2000 Coss 0.0005 Crss 0 0 0 15 30 45 0 60 6 12 18 24 30 VDS - Drain-to-Source Voltage (V) ID - Drain Current (A) On-Resistance vs. Drain Current Capacitance 1.65 10 ID = 20A VDS = 8 V, 15 V RDS(on) - On-Resistance (Normalized) VGS - Gate-to-Source Voltage (V) ID = 20 A 8 6 VDS = 24 V 4 2 0 VGS = 10 V 1.4 VGS = 4.5 V 1.15 0.9 0.65 0 14 28 42 56 Qg - Total Gate Charge (nC) Gate Charge www.vishay.com 8 70 - 50 - 25 0 25 50 75 100 125 150 TJ - Junction Temperature (°C) On-Resistance vs. Junction Temperature For technical questions, contact: [email protected] Document Number: 62905 S13-2181-Rev. A, 14-Oct-13 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiZ914DT Vishay Siliconix CHANNEL-2 TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 0.005 ID = 20 A TJ = 150 °C RDS(on) - On-Resistance (Ω) IS - Source Current (A) 100 TJ = 25 °C 10 1 0.004 0.003 TJ = 125 °C 0.002 TJ = 25 °C 0.001 0.1 0 0.18 0.36 0.54 0.72 0.9 0.000 0 2 VSD - Source-to-Drain Voltage (V) 6 8 10 VGS - Gate-to-Source Voltage (V) Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage 10-1 100 VDS = 30 V 10-2 80 10-3 Power (W) IR - Reverse (A) 4 VDS = 10 V, 20 V -4 10 60 40 10-5 20 10-6 10-7 - 50 - 25 0 25 50 75 100 125 150 0 0.001 0.01 0.1 1 Time (s) 10 100 1000 TJ - Temperature (°C) Reverse Current (Schottky) Single Pulse Power, Junction-to-Ambient 1000 ID - Drain Current (A) 100 IDM limited 100 μs ID limited 1 ms 10 Limited by RDS(on)* 10 ms 1 100 ms 10 s,1 s 0.1 DC TA = 25 °C Single Pulse 0.01 0.01 BVDSS Limited 0.1 1 10 100 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified Safe Operating Area, Junction-to-Ambient Document Number: 62905 S13-2181-Rev. A, 14-Oct-13 For technical questions, contact: [email protected] www.vishay.com 9 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiZ914DT Vishay Siliconix 240 120 180 90 Power (W) ID - Drain Current (A) CHANNEL-2 TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 120 60 60 30 0 0 0 25 50 75 100 125 150 0 25 50 75 100 TC - Case Temperature (°C) TC - Case Temperature (°C) Current Derating* Power, Junction-to-Case 125 150 2.8 Power (W) 2.1 1.4 0.7 0.0 0 25 50 75 100 125 150 TA - Ambient Temperature (°C) Power, Junction-to-Ambient * The power dissipation PD is based on TJ(max.) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. www.vishay.com 10 For technical questions, contact: [email protected] Document Number: 62905 S13-2181-Rev. A, 14-Oct-13 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiZ914DT Vishay Siliconix CHANNEL-2 TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 Notes: 0.1 0.1 PDM t1 0.05 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = R thJA = 55 °C/W 0.02 3. T JM - TA = PDMZthJA(t) Single Pulse 0.01 0.0001 0.001 4. Surface Mounted 0.01 0.1 1 10 100 1000 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.05 0.02 Single Pulse 0.1 0.0001 0.001 0.01 0.1 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Case Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?62905. Document Number: 62905 S13-2181-Rev. A, 14-Oct-13 For technical questions, contact: [email protected] www.vishay.com 11 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Package Information www.vishay.com Vishay Siliconix PowerPAIR® 6 x 5 Case Outline Pin 7 Pin 6 Pin 5 Pin 5 Pin 6 Pin 7 Pin 8 K L Pin 8 b z L3 2X A D 0.10 C K1 E E1 D1 Pin 1 Pin 2 0.10 C Pin 3 Pin 4 Pin 3 Pin 4 2X E2 D1 Pin 2 Pin # 1 ident (optional) Pin 1 e Back side view Top side view 0.10 C A1 A3 b1 A C 0.08 C F F MILLIMETERS INCHES DIM. MIN. NOM. MAX. MIN. NOM. MAX. A 0.70 0.75 0.80 0.028 0.030 0.032 A1 0.00 - 0.10 0.000 - 0.004 A3 0.15 0.20 0.25 0.006 0.007 0.009 b 0.43 0.51 0.61 0.017 0.020 0.024 b1 0.25 BSC 0.010 BSC D 4.90 5.00 5.10 0.192 0.196 0.200 D1 3.75 3.80 3.85 0.148 0.150 0.152 E 5.90 6.00 6.10 0.232 0.236 0.240 E1 Option AA (for W/B) 2.62 2.67 2.72 0.103 0.105 0.107 E1 Option AB (for BWL) 2.42 2.47 2.52 0.095 0.097 0.099 E2 0.87 0.92 0.97 0.034 0.036 0.038 e 1.27 BSC 0.050 BSC 0.018 typ. K Option AA (for W/B) 0.45 typ. K Option AB (for BWL) 0.65 typ. 0.025 typ. K1 0.66 typ. 0.025 typ. L 0.33 0.43 0.53 0.013 0.017 L3 0.23 BSC 0.009 BSC z 0.34 BSC 0.013 BSC 0.020 ECN: T14-0782-Rev. C, 22-Dec-14 DWG: 6005 Revision: 22-Dec-14 1 Document Number: 63656 THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 PAD Pattern www.vishay.com Vishay Siliconix Recommended Minimum PAD for PowerPAIR® 6 x 5 0.28 (0.011) 0.53 (0.021) 2.835 (0.112) 0.45 (0.018) 2.12 (0.083) 2.67 (0.105) 4 (0.157) (0, 0) 0.55 (0.022) 0.66 (0.026) 1.21 (0.048) 0.92 (0.036) 4 (0.157) 2.13 (0.084) 0.44 (0.017) 2.835 (0.112) 1.905 (0.075) Pin 1 0.53 (0.021) 1.27 (0.050) 0.66 (0.026) 0.61 (0.024) Dimensions in millimeters (inch) Note • Linear dimensions are in black, the same information is provided in ordinate dimensions which are in blue. Revision: 16-Feb-15 1 Document Number: 67480 THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. 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Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as Halogen-Free follow Halogen-Free requirements as per JEDEC JS709A standards. Please note that some Vishay documentation may still make reference to the IEC 61249-2-21 definition. We confirm that all the products identified as being compliant to IEC 61249-2-21 conform to JEDEC JS709A standards. Revision: 02-Oct-12 1 Document Number: 91000