SiZ914DT Datasheet

SiZ914DT
Vishay Siliconix
Dual N-Channel 30 V (D-S) MOSFETs
FEATURES
PRODUCT SUMMARY
VDS (V)
Channel-1
30
Channel-2
30
RDS(on) () (Max.)
ID
(A)g
0.00640 at VGS = 10 V
16a
0.01000 at VGS = 4.5 V
16a
0.00137 at VGS = 10 V
40a
0.00194 at VGS = 4.5 V
40a
Qg (Typ.)
7.2 nC
30.1 nC
PowerPAIR® 6 x 5
Pin 1
G1
1
5 mm
D1
2
D1
D1
3
• TrenchFET® Gen IV Power MOSFETs
• 100 % Rg and UIS Tested
• Material categorization:
For definitions of compliance please see
www.vishay.com/doc?99912
APPLICATIONS
•
•
•
•
•
D1
CPU Core Power
Computer/Server Peripherals
Synchronous Buck Converter
POL
Telecom DC/DC
D1
G1
N-Channel 1
MOSFET
S1/D2
4
G2
S1/D2
Pin 9
S2
8
7
N-Channel 2
MOSFET
6 mm
6
Schottky
Diode
G2
5
S2
Ordering Information:
SiZ914DT-T1-GE3 (Lead (Pb)-free and Halogen-free)
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
Parameter
Symbol
VDS
VGS
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (TJ = 150 °C)
TC = 25 °C
TC = 70 °C
TA = 25 °C
TA = 70 °C
ID
Continuous Source Drain Diode Current
TC = 25 °C
TA = 25 °C
IS
Single Pulse Avalanche Current
Single Pulse Avalanche Energy
L = 0.1 mH
IAS
EAS
Maximum Power Dissipation
TC = 25 °C
TC = 70 °C
TA = 25 °C
TA = 70 °C
PD
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)d, e
Channel-2
30
+ 20, - 16
a
IDM
Pulsed Drain Current (t = 100 µs)
Channel-1
V
a
16
16a
16a, b, c
15.5b, c
80
19
3.25b, c
10
5
22.7
14.5
3.9b, c
2.5b, c
TJ, Tstg
Unit
40
40a
40a, b, c
38.8b, c
100
28
4.3b, c
20
20
100
64
5.2b, c
3.3b, c
- 55 to 150
260
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
Channel-1
Parameter
Symbol
RthJA
RthJC
Typ.
Max.
Channel-2
Typ.
Max.
Unit
t  10 s
25
32
19
24
Maximum Junction-to-Ambientb, f
°C/W
4.4
5.5
1
1.25
Maximum Junction-to-Case (Drain)
Steady State
Notes:
a. Package limited
b. Surface mounted on 1" x 1" FR4 board.
c. t = 10 s.
d. See solder profile (www.vishay.com/doc?73257). The PowerPAIR is a leadless package. The end of the lead terminal is exposed copper (not
plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required
to ensure adequate bottom side solder interconnection.
e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components.
f. Maximum under steady state conditions is 62 °C/W for channel-1 and 55 °C/W for channel-2.
g. TC = 25 °C.
Document Number: 62905
S13-2181-Rev. A, 14-Oct-13
For technical questions, contact: [email protected]
www.vishay.com
1
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SiZ914DT
Vishay Siliconix
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
Parameter
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate Source Leakage
Zero Gate Voltage Drain Current
On-State Drain Currentb
Drain-Source On-State Resistanceb
Forward Transconductanceb
VDS
VGS(th)
IGSS
IDSS
ID(on)
RDS(on)
gfs
VGS = 0 V, ID = 250 µA
Ch-1
30
VGS = 0 V, ID = 250 µA
Ch-2
30
VDS = VGS, ID = 250 µA
Ch-1
1.2
2.4
VDS = VGS, ID = 250 µA
Ch-2
1
2.4
V
Ch-1
± 100
Ch-2
± 100
VDS = 30 V, VGS = 0 V
Ch-1
1
VDS = 0 V, VGS = ± 20 V, - 16 V
VDS = 30 V, VGS = 0 V
Ch-2
VDS = 30 V, VGS = 0 V, TJ = 55 °C
Ch-1
VDS = 30 V, VGS = 0 V, TJ = 55 °C
Ch-2
VDS 5 V, VGS = 10 V
Ch-1
20
VDS 5 V, VGS = 10 V
Ch-2
25
VGS = 10 V, ID = 19 A
Ch-1
VGS = 10 V, ID = 20 A
Ch-2
0.00114 0.00137
VGS = 4.5 V, ID = 15 A
Ch-1
0.00800 0.01000
VGS = 4.5 V, ID = 20 A
Ch-2
0.00155 0.00194
VDS = 10 V, ID = 19 A
Ch-1
55
VDS = 10 V, ID = 20 A
Ch-2
68
Ch-1
1208
Ch-2
5603
60
240
V
nA
µA
5
0.5
5
mA
A
0.00530 0.00640

S
Dynamica
Input Capacitance
Ciss
Output Capacitance
Coss
Channel-1
VDS = 15 V, VGS = 0 V, f = 1 MHz
Reverse Transfer Capacitance
Crss
Channel-2
VDS = 15 V, VGS = 0 V, f = 1 MHz
Qg
Gate-Drain Charge
Output Charge
Gate Resistance
Qoss
Rg
pF
30
168
Ch-1
0.025
0.050
Ch-2
0.032
0.064
VDS = 15 V, VGS = 10 V, ID = 20 A
Ch-1
17
26
VDS = 15 V, VGS = 10 V, ID = 20 A
Ch-2
66
99
Ch-1
7.2
11
Ch-2
30.1
45.2
Qgs
Qgd
2202
Ch-2
Channel-1
VDS = 15 V, VGS = 4.5 V, ID = 20 A
Gate-Source Charge
375
Ch-2
Ch-1
Crss/Ciss Ratio
Total Gate Charge
Ch-1
Channel-2
VDS = 15 V, VGS = 4.5 V, ID = 20 A
VDS = 15 V, VGS = 0 V
f = 1 MHz
Ch-1
3.6
Ch-2
10.9
Ch-1
0.94
Ch-2
3.8
Ch-1
10
Ch-2
nC
60
Ch-1
0.5
2.5
5
Ch-2
0.2
1
2

Notes:
a. Guaranteed by design, not subject to production testing.
b. Pulse test; pulse width  300 µs, duty cycle  2 %.
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For technical questions, contact: [email protected]
Document Number: 62905
S13-2181-Rev. A, 14-Oct-13
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SiZ914DT
Vishay Siliconix
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
Parameter
Symbol
Test Conditions
Min.
Typ.
Max.
Ch-1
16
24
Ch-2
40
60
Ch-1
11
20
Ch-2
127
190
Ch-1
15
23
Ch-2
40
60
Ch-1
5
10
Unit
Dynamica
td(on)
Turn-On Delay Time
tr
Rise Time
td(off)
Turn-Off Delay Time
tf
Fall Time
td(on)
Turn-On Delay Time
tr
Rise Time
Fall Time
Channel-2
VDD = 15 V, RL = 1.5 
ID  10 A, VGEN = 4.5 V, Rg = 1 
Channel-1
VDD = 15 V, RL = 1.5 
ID  10 A, VGEN = 10 V, Rg = 1 
tf
Channel-2
VDD = 15 V, RL = 1.5 
ID  10 A, VGEN = 10 V, Rg = 1 
IS
TC = 25 °C
td(off)
Turn-Off Delay Time
Channel-1
VDD = 15 V, RL = 1.5 
ID  10 A, VGEN = 4.5 V, Rg = 1 
Ch-2
19
29
Ch-1
10
20
Ch-2
12
20
Ch-1
10
20
Ch-2
30
45
Ch-1
20
30
Ch-2
35
53
Ch-1
5
10
Ch-2
7
14
ns
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulse Diode Forward Current (t = 100 µs)
ISM
VSD
Body Diode Voltage
40
Ch-2
40
Ch-1
80
Ch-2
Ch-1
0.8
1.2
IS = 2 A, VGS = 0 V
Ch-2
0.33
0.42
Ch-1
15
23
Ch-2
62
93
Body Diode Reverse Recovery Charge
Qrr
Channel-1
IF = 10 A, dI/dt = 100 A/µs, TJ = 25 °C
Reverse Recovery Fall Time
ta
Channel-2
IF = 10 A, dI/dt = 100 A/µs, TJ = 25 °C
Reverse Recovery Rise Time
tb
A
100
IS = 10 A, VGS = 0 V
trr
Body Diode Reverse Recovery Time
Ch-1
Ch-1
4
8
Ch-2
96
144
Ch-1
9
Ch-2
30.5
Ch-1
6
Ch-2
31.5
V
ns
nC
ns
Notes:
a. Guaranteed by design, not subject to production testing.
b. Pulse test; pulse width  300 µs, duty cycle  2 %.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
Document Number: 62905
S13-2181-Rev. A, 14-Oct-13
For technical questions, contact: [email protected]
www.vishay.com
3
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SiZ914DT
Vishay Siliconix
CHANNEL-1 TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
80
5
VGS = 10 V thru 5 V
ID - Drain Current (A)
ID - Drain Current (A)
4
VGS = 4 V
60
40
3
TC = 25 °C
2
20
1
TC = 125 °C
VGS = 3 V
TC = - 55 °C
0
0
0
0.5
1
1.5
0
2
0.6
1.2
1.8
2.4
3
VGS - Gate-to-Source Voltage (V)
VDS - Drain-to-Source Voltage (V)
Output Characteristics
Transfer Characteristics
1350
0.0150
Ciss
1080
C - Capacitance (pF)
RDS(on) - On-Resistance (Ω)
0.0120
VGS = 4.5 V
0.0090
VGS = 10 V
0.0060
810
540
Coss
270
0.0030
Crss
0
0.0000
0
14
28
42
56
0
70
5
ID - Drain Current (A)
On-Resistance vs. Drain Current
15
20
Capacitance
1.7
10
ID = 19 A
RDS(on) - On-Resistance (Normalized)
ID = 19 A
VGS - Gate-to-Source Voltage (V)
10
VDS - Drain-to-Source Voltage (V)
VDS = 15 V
8
6
VDS = 8 V
VDS = 24 V
4
2
VGS = 10 V
1.45
VGS = 4.5 V
1.2
0.95
0.7
0
0
5
10
15
Qg - Total Gate Charge (nC)
Gate Charge
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4
20
- 50
- 25
0
25
50
75
100
125
150
TJ - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
For technical questions, contact: [email protected]
Document Number: 62905
S13-2181-Rev. A, 14-Oct-13
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SiZ914DT
Vishay Siliconix
CHANNEL-1 TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
0.02
100
RDS(on) - On-Resistance (Ω)
IS - Source Current (A)
ID = 19 A
TJ = 150 °C
10
TJ = 25 °C
1
0.015
TJ = 125 °C
0.01
TJ = 25 °C
0.005
0.1
0
0.0
0.2
0.4
0.6
0.8
1.0
1.2
0
2
4
6
8
10
VSD - Source-to-Drain Voltage (V)
VGS - Gate-to-Source Voltage (V)
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
70
2.1
56
Power (W)
VGS(th) (V)
1.8
ID = 250 μA
1.5
42
28
1.2
14
0
0.001
0.9
- 50
- 25
0
25
50
75
100
125
150
0.01
0.1
1
10
TJ - Temperature (°C)
Time (s)
Threshold Voltage
Single Pulse Power, Junction-to-Ambient
Limited by IDM
100
ID limited
ID - Drain Current (A)
10
100 μs
1 ms
1
Limited by RDS(on)*
10 ms
100 ms
1s
10 s
0.1
DC
TA = 25 °C
Single Pulse
BVDSS Limited
0.01
0.1
1
10
100
VDS - Drain-to-Source Voltage (V)
* VGS > minimum VGS at which RDS(on) is specified
Safe Operating Area, Junction-to-Ambient
Document Number: 62905
S13-2181-Rev. A, 14-Oct-13
For technical questions, contact: [email protected]
www.vishay.com
5
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SiZ914DT
Vishay Siliconix
CHANNEL-1 TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
30
52
24
Power (W)
ID - Drain Current (A)
39
26
13
18
12
6
0
0
0
25
50
75
100
125
0
150
25
50
TC - Case Temperature (°C)
75
100
125
150
TC - Case Temperature (°C)
Power, Junction-to-Case
Current Derating*
2.5
Power (W)
2.0
1.5
1.0
0.5
0.0
0
25
50
75
100
125
150
TA - Ambient Temperature (°C)
Power, Junction-to-Ambient
* The power dissipation PD is based on TJ(max.) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
www.vishay.com
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For technical questions, contact: [email protected]
Document Number: 62905
S13-2181-Rev. A, 14-Oct-13
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SiZ914DT
Vishay Siliconix
CHANNEL-1 TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Normalized Effective Transient
Thermal Impedance
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
0.0001
0.001
0.01
0.1
1
10
100
1000
Square Wave Pulse Duration (s)
Normalized Effective Transient
Thermal Impedance
Normalized Thermal Transient Impedance, Junction-to-Ambient
1
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
Single Pulse
0.1
0.0001
0.001
0.01
0.1
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Case
Document Number: 62905
S13-2181-Rev. A, 14-Oct-13
For technical questions, contact: [email protected]
www.vishay.com
7
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SiZ914DT
Vishay Siliconix
CHANNEL-2 TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
5
80
VGS = 10 V thru 4 V
4
ID - Drain Current (A)
ID - Drain Current (A)
60
VGS = 3 V
40
20
TC = 25 °C
3
2
1
0
0
0.5
1
1.5
TC = 125 °C
TC = - 55 °C
0
2
0
0.6
1.2
1.8
2.4
3
VDS - Drain-to-Source Voltage (V)
VGS - Gate-to-Source Voltage (V)
Output Characteristics
Transfer Characteristics
8000
0.002
6000
C - Capacitance (pF)
RDS(on) - On-Resistance (Ω)
0.0025
VGS = 4.5 V
0.0015
VGS = 10 V
0.001
Ciss
4000
2000
Coss
0.0005
Crss
0
0
0
15
30
45
0
60
6
12
18
24
30
VDS - Drain-to-Source Voltage (V)
ID - Drain Current (A)
On-Resistance vs. Drain Current
Capacitance
1.65
10
ID = 20A
VDS = 8 V, 15 V
RDS(on) - On-Resistance (Normalized)
VGS - Gate-to-Source Voltage (V)
ID = 20 A
8
6
VDS = 24 V
4
2
0
VGS = 10 V
1.4
VGS = 4.5 V
1.15
0.9
0.65
0
14
28
42
56
Qg - Total Gate Charge (nC)
Gate Charge
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8
70
- 50
- 25
0
25
50
75
100
125
150
TJ - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
For technical questions, contact: [email protected]
Document Number: 62905
S13-2181-Rev. A, 14-Oct-13
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SiZ914DT
Vishay Siliconix
CHANNEL-2 TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
0.005
ID = 20 A
TJ = 150 °C
RDS(on) - On-Resistance (Ω)
IS - Source Current (A)
100
TJ = 25 °C
10
1
0.004
0.003
TJ = 125 °C
0.002
TJ = 25 °C
0.001
0.1
0
0.18
0.36
0.54
0.72
0.9
0.000
0
2
VSD - Source-to-Drain Voltage (V)
6
8
10
VGS - Gate-to-Source Voltage (V)
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
10-1
100
VDS = 30 V
10-2
80
10-3
Power (W)
IR - Reverse (A)
4
VDS = 10 V, 20 V
-4
10
60
40
10-5
20
10-6
10-7
- 50
- 25
0
25
50
75
100
125
150
0
0.001
0.01
0.1
1
Time (s)
10
100
1000
TJ - Temperature (°C)
Reverse Current (Schottky)
Single Pulse Power, Junction-to-Ambient
1000
ID - Drain Current (A)
100
IDM limited
100 μs
ID limited
1 ms
10
Limited by RDS(on)*
10 ms
1
100 ms
10 s,1 s
0.1
DC
TA = 25 °C
Single Pulse
0.01
0.01
BVDSS Limited
0.1
1
10
100
VDS - Drain-to-Source Voltage (V)
* VGS > minimum VGS at which RDS(on) is specified
Safe Operating Area, Junction-to-Ambient
Document Number: 62905
S13-2181-Rev. A, 14-Oct-13
For technical questions, contact: [email protected]
www.vishay.com
9
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SiZ914DT
Vishay Siliconix
240
120
180
90
Power (W)
ID - Drain Current (A)
CHANNEL-2 TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
120
60
60
30
0
0
0
25
50
75
100
125
150
0
25
50
75
100
TC - Case Temperature (°C)
TC - Case Temperature (°C)
Current Derating*
Power, Junction-to-Case
125
150
2.8
Power (W)
2.1
1.4
0.7
0.0
0
25
50
75
100
125
150
TA - Ambient Temperature (°C)
Power, Junction-to-Ambient
* The power dissipation PD is based on TJ(max.) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
www.vishay.com
10
For technical questions, contact: [email protected]
Document Number: 62905
S13-2181-Rev. A, 14-Oct-13
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SiZ914DT
Vishay Siliconix
CHANNEL-2 TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Normalized Effective Transient
Thermal Impedance
1
Duty Cycle = 0.5
0.2
Notes:
0.1
0.1
PDM
t1
0.05
t2
1. Duty Cycle, D =
t1
t2
2. Per Unit Base = R thJA = 55 °C/W
0.02
3. T JM - TA = PDMZthJA(t)
Single Pulse
0.01
0.0001
0.001
4. Surface Mounted
0.01
0.1
1
10
100
1000
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
1
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
Single Pulse
0.1
0.0001
0.001
0.01
0.1
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Case
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?62905.
Document Number: 62905
S13-2181-Rev. A, 14-Oct-13
For technical questions, contact: [email protected]
www.vishay.com
11
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Package Information
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Vishay Siliconix
PowerPAIR® 6 x 5 Case Outline
Pin 7
Pin 6
Pin 5
Pin 5
Pin 6
Pin 7
Pin 8
K
L
Pin 8
b
z
L3
2X
A
D
0.10 C
K1
E
E1
D1
Pin 1
Pin 2
0.10 C
Pin 3
Pin 4
Pin 3
Pin 4
2X
E2
D1
Pin 2
Pin # 1 ident
(optional)
Pin 1
e
Back side view
Top side view
0.10 C
A1
A3
b1
A
C
0.08 C
F
F
MILLIMETERS
INCHES
DIM.
MIN.
NOM.
MAX.
MIN.
NOM.
MAX.
A
0.70
0.75
0.80
0.028
0.030
0.032
A1
0.00
-
0.10
0.000
-
0.004
A3
0.15
0.20
0.25
0.006
0.007
0.009
b
0.43
0.51
0.61
0.017
0.020
0.024
b1
0.25 BSC
0.010 BSC
D
4.90
5.00
5.10
0.192
0.196
0.200
D1
3.75
3.80
3.85
0.148
0.150
0.152
E
5.90
6.00
6.10
0.232
0.236
0.240
E1 Option AA (for W/B)
2.62
2.67
2.72
0.103
0.105
0.107
E1 Option AB (for BWL)
2.42
2.47
2.52
0.095
0.097
0.099
E2
0.87
0.92
0.97
0.034
0.036
0.038
e
1.27 BSC
0.050 BSC
0.018 typ.
K Option AA (for W/B)
0.45 typ.
K Option AB (for BWL)
0.65 typ.
0.025 typ.
K1
0.66 typ.
0.025 typ.
L
0.33
0.43
0.53
0.013
0.017
L3
0.23 BSC
0.009 BSC
z
0.34 BSC
0.013 BSC
0.020
ECN: T14-0782-Rev. C, 22-Dec-14
DWG: 6005
Revision: 22-Dec-14
1
Document Number: 63656
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
PAD Pattern
www.vishay.com
Vishay Siliconix
Recommended Minimum PAD for PowerPAIR® 6 x 5
0.28
(0.011)
0.53
(0.021)
2.835
(0.112)
0.45
(0.018)
2.12
(0.083)
2.67
(0.105)
4
(0.157)
(0, 0)
0.55
(0.022)
0.66
(0.026)
1.21
(0.048)
0.92
(0.036)
4
(0.157)
2.13
(0.084)
0.44
(0.017)
2.835
(0.112)
1.905
(0.075)
Pin 1
0.53
(0.021)
1.27
(0.050)
0.66
(0.026)
0.61
(0.024)
Dimensions in millimeters (inch)
Note
• Linear dimensions are in black, the same information is provided in ordinate dimensions which are in blue.
Revision: 16-Feb-15
1
Document Number: 67480
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Legal Disclaimer Notice
www.vishay.com
Vishay
Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively,
“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.
Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or
the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all
liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special,
consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular
purpose, non-infringement and merchantability.
Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of typical
requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements
about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular
product with the properties described in the product specification is suitable for use in a particular application. Parameters
provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All
operating parameters, including typical parameters, must be validated for each customer application by the customer’s
technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase,
including but not limited to the warranty expressed therein.
Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining
applications or for any other application in which the failure of the Vishay product could result in personal injury or death.
Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk. Please
contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by
any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners.
Material Category Policy
Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the
definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council
of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment
(EEE) - recast, unless otherwise specified as non-compliant.
Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that
all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU.
Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as Halogen-Free follow Halogen-Free
requirements as per JEDEC JS709A standards. Please note that some Vishay documentation may still make reference
to the IEC 61249-2-21 definition. We confirm that all the products identified as being compliant to IEC 61249-2-21
conform to JEDEC JS709A standards.
Revision: 02-Oct-12
1
Document Number: 91000