RPI-130 Photointerrupter, Ultraminiature DIP type Absolute maximum ratings (Ta=25°C) Limits Unit IF 50 mA Reverse voltage VR 5 V Power dissipation PD 80 mW Collector-emitter voltage VCEO 30 V Emitter-collector voltage VECO 4.5 V IC 30 mA Collector current Collector power dissipation Applications DSC(Digital steal camera) DVC(Digital video camera) Digital handy phone Features PC 80 mW Operating temperature Topr −25 to +85 °C Storage temperature Tstg −30 to +85 °C 1) Ultraminiature DIP type. 2) Gap 1.2mm. Electrical and optical characteristics (Ta=25°C) Output Input Infrared Transfer characteristics charac- characlight teristics teristics emitter diode Parameter Forward voltage Photo transistor Response time Symbol Min. Typ. Max. Unit VF − 1.45 1.75 V IF=20mA Conditions IR − − 10 μA VR=5V ICEO − − 0.1 μA VCE=10V Peak sensitivity wavelength λP − 800 − nm Collector current IC 2 − 10 mA Reverse current Dark current − VCE=5V, IF=10mA Collector-emitter saturation voltage VCE(sat) − − 0.4 V Rise time tr − 10 − μs Fall time tf − 10 − μs Cut-off frequency fC − 1 − MHz Peak light emitting wavelength λP − 850 − nm tr tf − 10 − μs λP − 800 − nm Response time Maximum sensitivity wavelength IF=20mA, IC=0.1mA VCC=5V, IF=20mA, RL=100Ω IF=50mA ∗ Non-coherent Infrared light emitting diode used. VCC=5V, IC=1mA, RL=100Ω ∗ This product is not designed to be protected against electromagnetic wave. − RELATIVE COLLECTOR CURRENT : Ic (%) Electrical and optical characteristics curves 20 100 80 60 40 20 0 50 40 30 20 10 0 0.5 1 1.5 DISTANCE : d (mm) 2 80 60 40 20 0 1 12 10 8 6 4 0 20 40 60 80 100 0 1.5 DISTANCE : d (mm) Fig.4 Relative output current vs. distance ( ) 120 100 PD PC 80 60 40 20 0 −20 0 20 40 60 80 0.5 1 1.5 2 FORWARD VOLTAGE : VF (V) Fig.3 Forward current vs. forward voltage Fig.2 Forward current falloff POWER DISSIPATION / COLLECTOR POWER DISSIPTION：PD/PC (mW) 100 0.5 14 AMBIENT TEMPERATURE : Ta (°C) 120 −25°C 0°C 25°C 50°C 75°C 16 0 −20 Fig.1 Relative output current vs. distance ( ) 0 18 2 RELATIVE COLLECTOR CURRENT : Ic (%) 0 FORWARD CURRENT : IF (mA) FORWARD CURRENT : IF (mA) 120 RELATIVE COLLECTOR CURRENT : Ic (%) Output Input (LED) Parameter (phototransistor ) Symbol Forward current 100 AMBIENT TEMPERATURE : Ta (°C) Fig.5 Power dissipation / collector power dissipation vs. ambient temperature 140 120 100 80 60 40 VCE=5V IF=10mA 20 0 -25 0 25 50 75 100 AMBIENT TEMPERATURE : Ta (°C) Fig.6 Relative output vs. ambient temperature Dimensions (Unit : mm) 0.7 Note) 1. Unspecified tolerance shall be ± 0.2. 0.4 A 2. Dimension in parenthesis are shown for 0.7 2.0 reference. A' 3. 1 2- C0. 4 1. 5 4 - 0. 15 ( 1 .5 ) 2. 0 1. 4 (1.1) 1. 2 4- 0. 3 ( 2. 0) ( 1. 3) Internal connection diagram 1.4 ③ ① ④ (Optical center) Cathode ( 0. 65) 1.7 0.5 ② ( 0. 35) Colletor ( 0. 5) ( 0. 3) Anode Emitter 800 18 700 16 14 12 10 8 6 4 VCE=5V Ta=25℃ 2 10 20 30 40 tr 600 tf 500 400 300 200 50 10 100 Input 1 −25 0 25 50 75 100 Fig.9 Dark current vs. ambient temperature Fig.8 Response time vs. load resistance 25 VCE=30V VCE=20V VCE=10V 10 AMBIENT TEMPERATURE : Ta (°C) LOAD RESISTANCE : RL (kΩ) Fig.7 Collector current vs. forward current 100 0.1 0 1 FORWARD CURRENT : IF (mA) COLLECTOR CURRENT : Ic(mA) 1000 100 0 0 VCC=5V IC=0.1mA DARK CURRENT : ICEO (nA) 20 RESPONSE TIME : tr (μs) COLLECTOR CURRENT : IC (mA) A - A ' Cross section VCC IF=50mA 20 IF=40mA Input Output IF=30mA 15 90% RL IF=20mA 10% Output 10 td IF=10mA tr 5 tf td : Delay time t r : Rise time (time for output current to rise from 10% to 90% of peak current) 0 0 2 4 6 8 10 CORRECTOR TO EMITTER VOLTAGE : VCE(V) Fig.11 Output characteristics t f : Fall time (time for output current to fall from 90% to 10% of peak current) Fig.12 Response time measurement circuit 2010.10 Rev.C Notice Notes No copying or reproduction of this document, in part or in whole, is permitted without the consent of ROHM Co.,Ltd. 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