Schottky barrier diode RB520CS-30 z Dimensions (Unit : mm) z Land size figure (Unit : mm) 0.55 0.5 0.45 zApplications Low current rectification 0.45 zFeatures 1) Ultra Small power mold type. (VMN2) 2) Low IR VMN2 3)High reliability. zConstruction Silicon epitaxial planar zStructure zTaping specifications (Unit : mm) zAbsolute maximum ratings (Ta=25°C) Parameter Reverse voltage (DC) Average rectiied forward current Forward current surge peak (60Hz/1cyc) Junction temperature Storage temperature zElectrical characteristics (Ta=25°C) Parameter Limits Symbol VR Io IFSM Tj Tstg Unit V mA mA 30 100 500 150 -40 to +150 °C °C Forward voltage Symbol VF Min. - Typ. - Max. 0.45 Unit V Reverse current IR - - 0.5 µA www.rohm.com ©2009 ROHM Co., Ltd. All rights reserved. 1/3 Conditions IF=10mA VR=10V 2009.12 - Rev.D RB520CS-30 Data Sheet zElectrical characteristic curves 1000000 1000 100 Ta=125°C Ta=75°C 10 Ta=-25°C 1 Ta=25°C 0.1 0.01 100000 Ta=75°C 10000 1000 Ta=25°C Ta=-25°C 10 1 100 200 300 400 500 1 0 600 FORWARD VOLTAGE : V F(mV) VF-IF CHARACTERISTICS 20 30 0 REVERSE VOLTAGE : V R(V) VR-IR CHARACTERISTICS 370 900 350 340 330 AVE:338 : 8mV 800 700 600 500 400 300 AVE : 100.5nA 200 n=10pcs 16 15 14 13 12 0 10 AVE : 15.94pF IR DISPERSION MAP Ct DISPERSION MAP 10 10 20 PEAK SURGE FORWARD CURRENT:I FSM(A) 1cyc 15 8.3ms 10 AVE : 3.90A 5 0 Ifsm 8.3ms 8.3ms 1cyc 5 Ifsm t 5 0 0 1 10 1 100 10 100 TIME : t(ms) IFSM-t CHARACTERISTICS NUMBER OF CYCLES IFSM-CYCLE CHARACTERISTICS IFSM DISRESION MAP 0.1 1000 17 11 VF DISPERSION MAP Ifsm 18 100 320 20 Ta=25°C f=1MHz VR=0V 19 Ta=25°C VR=10V n=30pcs CAPACITANCE BETWEEN TERMINALS:Ct(pF) 360 5 10 15 REVERSE VOLTAGE : VR(V) VR-Ct CHARACTERISTICS 20 1000 Ta=25°C IF=10mA n=30pcs REVERSE CURRENT:IR(nA) 0.02 Rth(j-a) Rth(j-c) 100 Mounted on epoxy board IM=10mA 1ms IF=100mA FORWARD POWER DISSIPATION:Pf(W) 0.08 REVERSE POWER DISSIPATION:PR (W) FORWARD VOLTAGE:V F(mV) 10 PEAK SURGE FORWARD CURRENT:I FSM(A) 0 PEAK SURGE FORWARD CURRENT:I FSM(A) 10 100 0.001 TRANSIENT THAERMAL IMPEDANCE:Rth (°C/W) CAPACITANCE BETWEEN TERMINALS:Ct(pF) REVERSE CURRENT:IR(nA) FORWARD CURRENT:I F(mA) f=1MHz Ta=125°C 100 D=1/2 0.06 DC Sin(θ=180) 0.04 0.02 time 0.015 0.01 D=1/2 DC 0.005 Sin(θ=180) 300us 10 0.001 0 0.01 0.1 1 10 TIME : t(s) Rth-t CHARACTERISTICS 100 www.rohm.com ©2009 ROHM Co., Ltd. All rights reserved. 1000 0 0 0.05 0.1 0.15 AVERAGE RECTIFIED FORWARD CURRENT : Io(A) Io-Pf CHARACTERISTICS 2/3 0.2 0 10 20 30 REVERSE VOLTAGE : V R(V) VR-PR CHARACTERISTICS 2009.12 - Rev.D RB520CS-30 0.3 0A Io 0V VR t 0.2 DC T D=t/T VR=15V Tj=125°C D=1/2 0.1 Sin(θ=180) AVERAGE RECTIFIED FORWARD CURRENT:Io(A) AVERAGE RECTIFIDE FORWARD CURRENT:Io(A) 0.3 Data Sheet 0A Io 0V VR t 0.2 DC T D=t/T VR=15V Tj=125°C D=1/2 0.1 Sin(θ=180) 0 0 0 25 50 75 100 AMBIENT TEMPERATURE : Ta(°C) Derating Curve"(Io-Ta) www.rohm.com ©2009 ROHM Co., Ltd. All rights reserved. 125 0 25 50 75 100 125 CASE TEMPARATURE : Tc(°C) Derating Curve"(Io-Tc) 3/3 2009.12 - Rev.D Notice Notes No copying or reproduction of this document, in part or in whole, is permitted without the consent of ROHM Co.,Ltd. The content specified herein is subject to change for improvement without notice. The content specified herein is for the purpose of introducing ROHM's products (hereinafter "Products"). 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