ROHM RB520CS-30

Schottky barrier diode
RB520CS-30
z Dimensions (Unit : mm)
z Land size figure (Unit : mm)
0.55
0.5
0.45
zApplications
Low current rectification
0.45
zFeatures
1) Ultra Small power mold type. (VMN2)
2) Low IR
VMN2
3)High reliability.
zConstruction
Silicon epitaxial planar
zStructure
zTaping specifications (Unit : mm)
zAbsolute maximum ratings (Ta=25°C)
Parameter
Reverse voltage (DC)
Average rectiied forward current
Forward current surge peak (60Hz/1cyc)
Junction temperature
Storage temperature
zElectrical characteristics (Ta=25°C)
Parameter
Limits
Symbol
VR
Io
IFSM
Tj
Tstg
Unit
V
mA
mA
30
100
500
150
-40 to +150
°C
°C
Forward voltage
Symbol
VF
Min.
-
Typ.
-
Max.
0.45
Unit
V
Reverse current
IR
-
-
0.5
µA
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1/3
Conditions
IF=10mA
VR=10V
2009.12 - Rev.D
RB520CS-30
Data Sheet
zElectrical characteristic curves
1000000
1000
100
Ta=125°C
Ta=75°C
10
Ta=-25°C
1
Ta=25°C
0.1
0.01
100000
Ta=75°C
10000
1000
Ta=25°C
Ta=-25°C
10
1
100
200
300
400
500
1
0
600
FORWARD VOLTAGE : V F(mV)
VF-IF CHARACTERISTICS
20
30
0
REVERSE VOLTAGE : V R(V)
VR-IR CHARACTERISTICS
370
900
350
340
330
AVE:338 : 8mV
800
700
600
500
400
300
AVE : 100.5nA
200
n=10pcs
16
15
14
13
12
0
10
AVE : 15.94pF
IR DISPERSION MAP
Ct DISPERSION MAP
10
10
20
PEAK SURGE
FORWARD CURRENT:I FSM(A)
1cyc
15
8.3ms
10
AVE : 3.90A
5
0
Ifsm
8.3ms
8.3ms
1cyc
5
Ifsm
t
5
0
0
1
10
1
100
10
100
TIME : t(ms)
IFSM-t CHARACTERISTICS
NUMBER OF CYCLES
IFSM-CYCLE CHARACTERISTICS
IFSM DISRESION MAP
0.1
1000
17
11
VF DISPERSION MAP
Ifsm
18
100
320
20
Ta=25°C
f=1MHz
VR=0V
19
Ta=25°C
VR=10V
n=30pcs
CAPACITANCE BETWEEN
TERMINALS:Ct(pF)
360
5
10
15
REVERSE VOLTAGE : VR(V)
VR-Ct CHARACTERISTICS
20
1000
Ta=25°C
IF=10mA
n=30pcs
REVERSE CURRENT:IR(nA)
0.02
Rth(j-a)
Rth(j-c)
100
Mounted on epoxy board
IM=10mA
1ms
IF=100mA
FORWARD POWER
DISSIPATION:Pf(W)
0.08
REVERSE POWER
DISSIPATION:PR (W)
FORWARD VOLTAGE:V F(mV)
10
PEAK SURGE
FORWARD CURRENT:I FSM(A)
0
PEAK SURGE
FORWARD CURRENT:I FSM(A)
10
100
0.001
TRANSIENT
THAERMAL IMPEDANCE:Rth (°C/W)
CAPACITANCE BETWEEN
TERMINALS:Ct(pF)
REVERSE CURRENT:IR(nA)
FORWARD CURRENT:I F(mA)
f=1MHz
Ta=125°C
100
D=1/2
0.06
DC
Sin(θ=180)
0.04
0.02
time
0.015
0.01
D=1/2
DC
0.005
Sin(θ=180)
300us
10
0.001
0
0.01
0.1
1
10
TIME : t(s)
Rth-t CHARACTERISTICS
100
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©2009 ROHM Co., Ltd. All rights reserved.
1000
0
0
0.05
0.1
0.15
AVERAGE RECTIFIED
FORWARD CURRENT : Io(A)
Io-Pf CHARACTERISTICS
2/3
0.2
0
10
20
30
REVERSE VOLTAGE : V R(V)
VR-PR CHARACTERISTICS
2009.12 - Rev.D
RB520CS-30
0.3
0A
Io
0V
VR
t
0.2
DC
T
D=t/T
VR=15V
Tj=125°C
D=1/2
0.1
Sin(θ=180)
AVERAGE RECTIFIED
FORWARD CURRENT:Io(A)
AVERAGE RECTIFIDE
FORWARD CURRENT:Io(A)
0.3
Data Sheet
0A
Io
0V
VR
t
0.2
DC
T
D=t/T
VR=15V
Tj=125°C
D=1/2
0.1
Sin(θ=180)
0
0
0
25
50
75
100
AMBIENT TEMPERATURE : Ta(°C)
Derating Curve"(Io-Ta)
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©2009 ROHM Co., Ltd. All rights reserved.
125
0
25
50
75
100
125
CASE TEMPARATURE : Tc(°C)
Derating Curve"(Io-Tc)
3/3
2009.12 - Rev.D
Notice
Notes
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which can be obtained from ROHM upon request.
Examples of application circuits, circuit constants and any other information contained herein
illustrate the standard usage and operations of the Products. The peripheral conditions must
be taken into account when designing circuits for mass production.
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However, should you incur any damage arising from any inaccuracy or misprint of such
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The technical information specified herein is intended only to show the typical functions of and
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