QS5U23 Transistor Small switching (–20V, –1.5A) QS5U23 zExternal dimensions (Units : mm) 2.9+ −0.1 1.9 + −0.2 1.0MAX 0.85+ −0.1 0.3∼0.6 zFeatures 1) The QS5U23 conbines Pch MOSFET with a Schottky barrier diode in a single TSMT5 package. 2) Pch MOSSFET have a low on-state resistance with a fast switching. 3) Pch MOSFET is reacted a low voltage drive(2.5V) 4) The independently connected Schottky barrier diode have a low forward voltage. 0.7+ −0.1 0.95 0.95 (4) 2.8 +−0.2 1.6 +0.2 −0.1 (5) 0∼0.1 (1) (2) (3) +0.1 +0.1 0.16 −0.06 0.4−0.05 Each lead has same dimensions Abbreviated symbol : U23 zApplications Load switch , DC/DC conversion (5) zStructure • Silicon P-channel MOSFET • Schottky Barrier DIODE (4) ∗2 zPackaging specifications Package Taping Type ∗1 TR Code Basic ordering unit (pieces) (1)ANODE (2)SOURCE (3)GATE (4)DRAIN (5)CATHODE 3000 (1) (2) (3) ∗1 ESD PROTECTION DIODE ∗2 BODY DIODE QS5U23 zEquivalent circuit zAbsolute maximum ratings (Ta=25°C) < MOSFET > Parameter Drain−source voltage Source current (Body diode) Limits VDSS −20 V Unit VGSS ±12 V Continuous ID ± 1.5 A Pulsed IDP ± 6.0 A Continuous IS −0.75 A Gate−source voltage Drain current Symbol ISP −3.0 A Channel temperature Tch 150 °C < Di > Repetitive peak reverse voltage VRM 30 V Reverse voltage VR 20 V Forward current IF 0.5 A IFSM 2.0 A Tj 125 °C PD 1.0 Tstg −40∼125 Pulsed Forward current surge peak Junction temperature Pw < =10µs, Duty cycle < = 1% Pw < =10µs, Duty cycle < = 1% 60Hz / 1CYC < MOSFET AND Di > Total power dissipation Range of strage temperature W / TOTAL MOUNTED ON A CERAMIC BOARD °C 1/4 QS5U23 Transistor zElectrical characteristics (Ta=25°C) < MOSFET > Parameter Symbol Min. Typ. Max. Unit IGSS − − ±10 µA VGS=±12V/ VDS=0V −20 − − V ID=−1mA/ VGS=0V IDSS − − −1 µA VDS=−20V/ VGS=0V VGS(th) −0.7 − −2.0 V VDS=−10V/ ID=−1mA − 160 200 mΩ ID=−1.5A, VGS=−4.5V − 180 240 mΩ ID=−1.5A, VGS=−4V − 260 340 mΩ ID=−0.75A, VGS=−2.5V 1.0 − − S VDS=−10V, ID=−0.75A − 325 − pF VDS=−10V Coss − 60 − pF VGS=0V Crss td(on) ∗Pulsed tr ∗Pulsed td(off) ∗Pulsed tf ∗Pulsed − 40 − pF f=1MHz − 10 − ns − 10 − ns − 35 − ns − 10 − ns ID=−0.75A VDD −15 VGS =−4.5V RL=20Ω RGS=10Ω Total gate charge Qg − 4.2 − nC VDD Gate−source charge Qgs − 1.0 − nC VGS =−4.5V Gate−drain charge Qgd − 1.1 − nC ID=−1.5A − − −1.2 V IS=−0.75A/ VGS=0V − − 0.36 V IF=0.1A − − 0.47 V IF=0.5A − − 100 µA VR=20V Gate-source leakage Drain-source breakdown voltage V(BR)DSS Zero gate voltage drain current Gate threshold voltage Static drain−source on−state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn−on delay time Rise Time Turn off delay time Fall time RDS(on) ∗Pulsed Yfs ∗Pulsed Ciss Conditions −15V < MOSFET >Body diode(source−drain) Forward voltage VSD < Di > Foward voltage drop Reverse leakage VF IR 2/4 QS5U23 Transistor zElectrical characteristic curves 1000 Ta=125°C 75°C 25°C −25°C 0.1 0.01 0.001 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 1000 Ta=125 C 75 C 25 C −25 C 1 1 Fig.3 Static Drain−Source On−State Resistance vs. Drain Current 1000 ID=−0.75A −1.5A 250 200 150 100 50 0 2 4 6 8 10 Ta=125 C 75 C 25 C −25 C 0.1 VGS=−2.5V −4.0V −4.5V 10 0.1 12 1 10 Drain Current : −ID[A] Fig.6 Static Drain−Source On−State Resistance vs. Drain Current Fig.5 Static Drain−Source On−State Resistance vs.Gate−Source Voltage 1000 10000 Ta=25 C VDD=−15V VGS=−4.5V RG=10Ω pulsed Ta=25 C f=1MHz VGS=0V Capacitance : C [pF] 1 Ta=25 C pulsed 100 Gate−Source Voltage : −VGS[V] VGS=0V pulsed 10 Drain Current : −ID[A] Ta=25 C pulsed 300 0 10 Fig.4 Static Drain−Source On−State Resistance vs. Drain−Current Reverse Drain Current : −IDR[A] Ta=125 C 75 C 25 C −25 C 10 0.1 10 350 Drain Current : −ID[A] 10 1 400 VGS=−2.5V pulsed Static Drain−Source On−State Resistance RDS(on)[mΩ] Static Drain−Source On−State Resistance RDS(on)[mΩ] 10 0.1 100 Fig.2 Static Drain−Source On−State Resistance vs. Drain Current Fig.1 Typical Transfer Characteristics 10 0.1 Ta=125 C 75 C 25 C −25 C Drain Current : −ID[A] Gate−Source Voltage : VGS[V] 100 100 VGS=−4V pulsed Static Drain-Source On−State Resistance RDS(on)[mΩ] Drain Current : −ID (A) 1 1000 VGS=−4.5V pulsed Static Drain−Source On−State Resistance RDS(on)[mΩ] Static Drain−Source On−State Resistance RDS(on)[mΩ] VDS=−10V pulsed Switching Time : t [ns] 10 1000 Ciss 100 100 td(off) 10 tf td(on) Coss tr Crss 0.01 0 0.5 1.0 1.5 Source−Drain Voltage : −VSD[V] Fig.7 Reverse Drain Current VS. Source-Drain Current 2.0 10 0.01 0.1 1 10 100 1 0.01 0.1 1 Drain−Source Voltage : −VDS[V] Drain Current : −ID[A] Fig.8 Typical Capactitance vs. Drain−Source Voltage Fig.9 Switching Characteristics 10 3/4 QS5U23 Transistor 1000 8 Ta=25 C VDD=−15V ID=−1.5A RG=10Ω pulsed 5 4 3 2 125 C Reverse Current : IR[A] 6 100 Ta=125 C 75 C 25 C −25 C Forward Current : IF [mA] Gate-Source Voltage: -VGS [V] 7 100 10 10 75 C 1 0.1 25 C 0.01 1 −25 C 0.001 1 0 0.1 0 1 2 3 4 6 5 0.0001 0 0.1 0.2 0.3 0.4 0.5 0.6 0 Forward Voltage :VF [V] 10 20 30 40 Reverse Voltage : VR[V] Total Gate Charge : Qg[nC] Fig.10 Dynamic Input Characteristics Fig.11 Forward Temperature Characteristics Fig.12 Reverse Temperature Characteristics zMeasurement circuits Pulse Width VGS 10% 50% 50% 90% 10% 10% VGS ID D.U.T. RG VDS 90% 90% VDS RL VDD td(on) tr tf td(off) ton toff Fig.14 Switching Waveforms Fig.13 Switching Time Measurement Circuit VG Qg VGS VGS ID VDS Qgs IG(Const) RG D.U.T. Qgd RL VDD Charge Fig.15 Gate Charge Measurement Circuit Fig.16 Gate Charge Waveforms 4/4 Appendix Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual use, therefore, please request that specifications to be separately delivered. Application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. Please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. Any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. ROHM CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any third party's intellectual property rights or other proprietary rights, and further, assumes no liability of whatsoever nature in the event of any such infringement, or arising from or connected with or related to the use of such devices. Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or otherwise dispose of the same, no express or implied right or license to practice or commercially exploit any intellectual property rights or other proprietary rights owned or controlled by ROHM CO., LTD. is granted to any such buyer. Products listed in this document use silicon as a basic material. Products listed in this document are no antiradiation design. The products listed in this document are designed to be used with ordinary electronic equipment or devices (such as audio visual equipment, office-automation equipment, communications devices, electrical appliances and electronic toys). Should you intend to use these products with equipment or devices which require an extremely high level of reliability and the malfunction of with would directly endanger human life (such as medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety devices), please be sure to consult with our sales representative in advance. About Export Control Order in Japan Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control Order in Japan. In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause) on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction. Appendix1-Rev1.0