2970

NTE2970
MOSFET
N−Channel, Enhancement Mode
High Speed Switch
TO3P Type Package
Features:
D Avalanche Rugged Technology
D Rugged Gate Oxide Technology
D Lower Input Capacitance
D Improved Gate Charge
D Extended Safe Operating Area
D Lower Leakage Current
D Lower RDS(ON)
Applications:
D SMPS
D DC−DC Converter
D Battery Charger
D Power Supply of Printer
D Copier
D HDD, FDD, TV, VCR
D Personal Computer
Absolute Maximum Ratings:
Drain−Source Voltage, VDSS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500V
Drain Current, Continuous, ID
TC = +255C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22A
TC = +1005C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13.4A
Drain Current, Pulsed (Note 1), IDM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 88A
Gate−Source Voltage, VGS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +30V
Single Pulsed Avalanche Energy (Note 2), EAS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2151mJ
Avalanche Current (Note 1), IAR . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22A
Repetitive Avalanche Energy (Note 1), EAR . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 27.8mJ
Peak Diode Recovery dv/dt (Note 3), dv/dt . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3.5V/ns
Total Power Dissipation (TC = +255C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 278W
Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.22W/5C
Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −555 to +1505C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −555 to +1505C
Lead Temperature (During Soldering, 1/8” from case, 5 sec.), TL . . . . . . . . . . . . . . . . . . . . . . +3005C
Maximum Thermal Resistance, Junction−to−Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.455C/W
Typical Thermal Resistance, Case−to−Sink, RthCS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.245C/W
Maximum Thermal Resistance, Junction−to−Ambient, RthJA . . . . . . . . . . . . . . . . . . . . . . . . . 405C/W
Note 1. Repetitive Rating: Pulse Width limited by Maximum Junction Temperature.
Note 2. L = 8mH, IAS = 22A, VDD = 50V, RG = 273 , Starting TJ = +255C.
Note 3. ISD 3 22A, di/dt 3 300A/5 s, VDD 3 V(BR)DSS, Starting TJ = +255C.
Rev. 10−13
Electrical Characteristics: (TC = +255C unless otherwise specified)
Parameter
Drain−Source Breakdown Voltage
Symbol
Test Conditions
V(BR)DSS VGS = 0V, ID = 2505 A
Breakdown Voltage Temperature +BV/+TJ ID = 2505 A
Coefficient
Typ
Max
Unit
500
−
−
V
−
0.69
−
V/5C
2.0
−
4.0
V
Gate Threshold Voltage
VGS(th)
Gate−Source Leakage
IGSS
VGS = +30V
−
−
+100
nA
Zero Gate Voltage Drain Current
IDSS
VDS = 500V
−
−
10
5A
VDS = 400V, TC = +1255C
−
−
100
5A
RDS(on)
VGS = 10V, ID = 11A, Note 4
−
−
0.25
3
Forward Transconductance
gfs
VDS = 50V, ID = 11A, Note 4
−
17.31
−
mhos
Input Capacitance
Ciss
VGS = 0V, VDS = 25V, f = 1MHz
−
3940
5120
pF
Output Capacitance
Coss
−
465
535
pF
Reverse Transfer Capacitance
Crss
−
215
250
pF
Turn−On Delay Time
td(on)
−
27
65
ns
−
30
70
ns
td(off)
−
150
310
ns
tf
−
43
95
ns
−
182
236
nC
−
26
−
nC
−
79.6
−
nC
Integral Reverse PN−Diode in the
MOSFET
−
−
22
A
−
−
88
A
TJ = +255C, IS = 22A, VGS = 0V
−
−
1.4
V
TJ = +255C, IF = 22A,
diF/dt = 100A/5 s, Note 4
−
528
−
ns
−
8.35
−
5C
Static Drain−Source ON Resistance
Rise Time
Turn−Off Delay Time
Fall Time
tr
Total Gate Charge
Qg
Gate−Source Charge
Qgs
Gate−Drain (Miller) Charge
Qgd
VDS = 5V, ID = 2505 A
Min
VDD = 200V, ID = 22A, VGS = 10V,
RG = 5.33 , Note 4, Note 5
VDS = 400V, VGS = 10V, ID = 22A,
Note 4, Note 5
Source−Drain Diode Ratings and Characteristics
Continuous Source Current
IS
Pulsed Source Current (Note 1)
ISM
Diode Forward Voltage
VSD
Reverse Recovery Time
trr
Reverse Recovery Charge
Qrr
Note 1. Repetitive Rating: Pulse Width limited by Maximum Junction Temperature.
Note 4. Pulse Test: Pulse Width = 2505 s, Duty Cycle 3 2%.
Note 5. Essentially Independent of Operating Temperature.
D
G
S
.190 (4.82)
.615 (15.62)
D
.787
(20.0)
.591
(15.02)
.126 (3.22) Dia
.787
(20.0)
G
D
S
.215 (5.47)