2947

NTE2947 & NTE2947F
MOSFET
N−Channel, Enhancement Mode High Speed Switches
TO−220 Type Package
Features:
D Available in Standard TO−220 (NTE2947) and TO−220 Full Pack (NTE2947F)
D RDS(on) = 220 m (Typ) @ VGS = 10V, ID = 9A
D Low Gate Charge (Typ 45nC)
D Low Crss (Typ 25pF)
D 100% Avalanche Tested
Applications:
D LCD/LED/PDP TV
D Lighting
D Uninterruptible Power Supply
D
G
S
Absolute Maximum Ratings:
Drain−Source Voltage, VDSS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500V
Gate−Source Voltage, VGS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .30V
Drain Current, Continuous (Note 1), ID
TC = +25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18A
TC = +100C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10.8A
Drain Current, Pulsed (Note 1, Note 2), IDM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 72A
Avalanche Current (Note 2), IAS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18A
Single Pulsed Avalanche Energy (Note 3), EAS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 945mJ
Repetitive Avalanche Energy (Note 2), EAR . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23.5mJ
Peak Diode Recovery (Note 4), dv/dt . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4.5V/ns
Total Power Dissipation, (TC = +25C), PD
NTE2947 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 235W
Derate Above 25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.88W/C
NTE2947F . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 38.5W
Derate Above 25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.3W/C
Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −55 to +150C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −55 to +150C
Maximum Lead Temperature (During Soldering, 1/8” from case, 5sec), TL . . . . . . . . . . . . . . +300C
Maximum Thermal Resistance, Junction−to−Case, RthJC
NTE2947 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.53C/W
NTE2947F . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3.3C/W
Maximum Thermal Resistance, Junction−to−Ambient, RthJA . . . . . . . . . . . . . . . . . . . . . . . . . 62.5K/W
Note
Note
Note
Note
1.
2.
3.
4.
Drain current limited by maximum junction temperature (TO−220 Full Pack ONLY).
Repetitive Rating: Pulse width limited by maximum junction temperature.
L = 5.2mH, IAS = 18, VDD = 50V, RG = 25, Starting TJ = +25C.
ISD  18A, di/dt  200As, VDD  BVDSS, starting TJ = +25C
Electrical Characteristics: (TC = +25C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
500
−
−
V
−
0.5
−
V/C
OFF Characteristics
Drain−Source Breakdown Voltage
Breakdown Voltage Temperature Coefficient
BVDSS
VGS = 0v, ID = 250A
BVDSS/TJ ID = 250A, Referenced to 25C
Zero Gate Voltage Drain Current
IDSS
VDS = 500V, VGS = 0V
−
−
1
A
Gate−Body Leakage Current Forward
IGSSF
VGS = 30V, VDS = 0V
−
−
100
nA
Gate−Body Leakage Current Reverse
IGSSR
VGS = −30V, VDS = 0V
−
−
−100
nA
VDS = 400V, TC = +125C
−
−
10
A
3.0
−
5.0
V
On Characteristics
Gate Threshold Voltage
VGS(th)
VDS = VGS, ID = 250A
Static Drain−Source ON Resistance
RDS(on)
VGS = 10V, ID = 9A
−
0.220
0.265

gfs
VDS = 40V, ID = 9A
−
25
−
S
Input Capacitance
Ciss
VDS = 25V, VGS =0V, f = 1MHz
−
2200
2860
pF
Output Capacitance
Coss
−
330
430
pF
Reverse Transfer Capacitance
Crss
−
25
40
pF
−
55
120
ns
−
165
340
ns
Forward Transconductance
Dynamic Characteristics
Switching Characteristics
Turn−On Delay Time
td(on)
Turn−On Rise Time
tr
Turn−Off Delay Time
td(off)
−
95
200
ns
tf
−
90
190
ns
−
45
60
nC
−
12.5
−
nC
−
19
−
nC
(Body Diode)
−
−
18
A
Turn−On Fall Time
Total Gate Charge
(Gate−Source Plus Gate−Drain)
Qg
Gate−Source Charge
Qgs
Gate−Drain (“Miller”) Charge
Qgd
VDD = 250V, ID = 18A,
VGS = 10V, RG = 25, Note 5
VDS = 400V, ID = 18A,
VGS = 10V, Note 5
Source−Drain Diode Characteristics and Maximum Ratings
Continuous Source Current
IS
Pulse Source Current
ISM
(Body Diode) Note 3
−
−
72
A
Diode Forward Voltage
VSD
VGS = 0V, IS = 18A
−
−
1.4
V
Reverse Recovery Time
trr
−
500
−
ns
Reverse Recovery Charge
trr
VGS = 0V, IS = 18A,
dIF/dt = 100A/s
−
5.4
−
C
Note 3. L = 5.2mH, IAS = 18, VDD = 50V, RG = 25, Starting TJ = +25C.
Note 5. Essentially independent of operating temperature typical characteristics.
NTE2947 (TO−220)
.420 (10.67)
Max
.110 (2.79)
Tab
.500
(12.7)
Max
.147 (3.75)
Dia Max
.250
(6.35)
Max
.500
(12.7)
Min
.070 (1.78) Max
Gate
Source
.100 (2.54)
Drain/Tab
NTE2947F (TO−220 Full Pack)
.181 (4.6)
.394 (10.0)
.118
(3.0)
.236
(6.0)
Isol
.590
(15.0)
G
.492
(12.5)
Min
.100 (2.54)
D
S
.110
(2.8)
.102 (2.6)
.106 (2.7)