Power transistor (9010V, 3A) 2SC5060 Dimensions (Unit : mm) Features 1) Built-in zener diode between collector and base. 2) Zener diode has low voltage dispersion. 3) Strong protection against reverse power surges due to “L” loads. 4) Darlington connection for high DC current gain. 5) Built-in resistor between base and emitter. 6) Built-in damper diode. 2.5 0.65Max. 0.5 Inner circuit 4.4 14.5 1.0 0.9 6.8 (1) (2) (3) 2.54 2.54 C 1.05 0.45 Taping specifications ROHM : ATV B R1 B : Base C : Collector E : Emitter (1) Emitter (2) Collector (3) Base R2 E R1 R2 3kΩ 1kΩ Absolute maximum ratings (Ta=25C) Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Limits 90±10 90±10 6 1 2 1 150 −55 to +150 Unit V V V A(DC) A(Pulse) W °C °C ∗1 ∗2 ∗1 Single pulse Pw=10ms ∗2 Printed circuit board : 1.7 mm thick, collector copper plating at least 100mm2. Packaging specifications and hFE Type Package hFE Code Basic ordering unit (pieces) 2SC5060 ATV M TV2 2500 Electrical characteristics (Ta=25C) Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cutoff current Emitter cutoff current DC current transfer ratio Collector-emitter saturation voltage Base-emitter saturation voltage Transition frequency Output capacitance Turn-on time Storage time Fall time Symbol BVCBO BVCEO BVEBO ICBO IEBO hFE VCE(sat) VBE(sat) fT Cob ton tstg tf Min. 80 80 6 − − 1000 − − − − − − − Typ. − − − − − − − − 80 20 0.2 5 0.6 Max. 100 100 − 10 3 2500 1.5 2 − − − − − Unit V V V μA mA − V V MHz pF μs μs μs Conditions IC=50μA IC=1mA IE=5mA VCB=70V VEB=5V VCE=3V, IC=0.5A IC/IB=500mA/1mA IC/IB=500mA/1mA VCB=5V, IE=−0.1A, f=30MHz VCE=10V, IE=0A, f=1MHz ∗1 ∗1 ∗2 IC=0.8A, RL=50Ω IB1= −IB2=8mA VCC 40V ∗1 Measured using pulse current. ∗2 Transition frequency of the device. www.rohm.com c 2009 ROHM Co., Ltd. All rights reserved. ○ 1/3 2009.12 - Rev.B 2SC5060 Data Sheet Electrical characteristics curves 25°C 0.2 −25°C °C 0.5 0.1 0.05 1.6 0.4 0.3mA 1.2 0.2mA 0.8 0.1mA 0.4 0.8 1.0 1.2 1.4 1.6 1.8 2.0 0 2.2 BASE TO EMITTER VOLTAGE : VBE (V) Fig.1 Ground emitter propagation characteristics 10k IB=0mA 0 1 2 3 4 Fig.2 Ground emitter output characteristics( ) 10k Ta=25°C VCE=3V DC CURRENT GAIN : hFE 5k VCE=5V 4V 3V 2k 1k 500 200 100 50 2k °C 00 °C =1 25 C 5° −2 1k Ta 500 200 100 50 20 20 10 0.01 0.02 0.05 0.1 0.2 0.5 1 2 5 10 0.01 0.02 10 0.2 0.5 1 2 5 10 Fig.4 DC current gain vs. collector current ( ) Fig.5 DC current gain vs. collector current( ) COLLECTOR OUTPUT CAPACITANCE : Cob (pF) COLLECTOR CURRENT : IC (A) COLLECTOR SATURATION VOLTAGE : VCE(sat) (V) BASE SATURATION VOLTAGE : VCE(sat) (V) COLLECTOR CURRENT : IC (A) 0.05 0.1 IC/IB=500 50 20 10 5 2 Ta= −25°C VBE(sat) 25°C 100°C 1 0.5 −25°C 0.2 100°C VCE(sat) 25°C 0.1 0.01 0.02 0.05 0.1 0.2 0.5 1 2 5 10 COLLECTOR CURRENT : IC (A) Fig.7 Collector-emitter saturation voltage Base-emitter saturation voltage vs. collector current www.rohm.com c 2009 ROHM Co., Ltd. All rights reserved. ○ 1000 200 100 50 20 10 5 2 1 0.1 0.2 0.5 1 2 5 10 20 50 100 COLLECTOR TO BASE VOLTAGE : VCB (A) Fig.8 Collector output capacitance vs. collector-base voltage 2/3 A 0.3m A 0.2m 0.1mA 0.8 0.4 IB=0mA 0 4 8 Ta=25°C 12 16 20 COLLECTOR TO EMITTER VOLTAGE : VCE (V) Fig.3 Ground emitter output characteristics( ) 100 Ta=25°C 50 20 10 5 IC/IB=1000 2 500 1 0.5 0.2 0.1 0.01 0.02 0.05 0.1 0.2 0.5 1 2 5 10 COLLECTOR CURRENT : IC (A) Fig.6 Collector-emitter saturation voltage vs. collector current 100 Ta=25°C f=1MHz IE=0A 500 mA mA 0.5 0.4 1.2 IC=100IB1= −100IB2 Ta=25°C 50 TURN ON TIME : ton (μs) STORAGE TIME : tstg (μs) FALL TIME : tf (μs) 100 1.6 0 5 COLLECTOR TO EMITTER VOLTAGE : VCE (V) 5k DC CURRENT GAIN : hFE mA 0.7mA 0.7mA A 0.8mA 0.02 0.01 0.6 mA 0.6 mA 0.5 A 1m COLLECTOR SATURATION VOLTAGE : VCE(sat) (V) 1 0.9mA 1m COLLECTOR CURRENT : IC (A) 2 2.0 Ta=25°C COLLECTOR CURRENT : IC (A) 2.0 VCE=3V 5 Ta= 100 COLLECTOR CURRENT : IC (A) 10 20 10 5 tstg 2 1 tf 0.5 0.2 0.1 0.01 0.02 ton 0.05 0.1 0.2 0.5 1 2 5 10 COLLECTOR CURRENT : IC (A) Fig.9 Switching characteristics 2009.12 - Rev.B 2SC5060 Data Sheet RL=50Ω VIN 5 2 1 IC(MAX) (Pulse∗) DC 500m IC T.U.T VCC ~ − 40V IB2 200m PW 100m PW ~ − 50 S Duty cycle 1% 50m IB1 +VBB ∗ ms ∗ =1 ms Pw 10 ms∗ 0 10 COLLECTOR CURRENT : IC (A) 10 −VBB Ta=25°C ∗Single nonrepetitive 10m pulse 20m 0.1 0.2 0.5 1 2 5 10 20 IB1 50 100 COLLECTOR TO EMITTER VOLTAGE : VCE (V) Base current waveform IB2 Fig.10 Safe operating area 90% IC Collector current waveform 10% ton tstg tf Fig.11 Switching time mesurement circuit www.rohm.com c 2009 ROHM Co., Ltd. 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