Medium Power Transistor (25V, 1.2A) 2SD2537 Features 1) High DC current gain. 2) High emitter-base voltage. (VEBO=12V) 3) Low saturation voltage. (Max. VCE(sat)=0.3V at IC/IB=500mA/10mA) Dimensions (Unit : mm) 2SD2537 2.5 4.0 Absolute maximum ratings (Ta=25°C) (3) 0.5 1.5 ROHM : MPT3 EIAJ : SC-62 Symbol Limits Unit VCBO 30 V Collector-emitter voltage VCEO 25 V Emitter-base voltage VEBO 12 V 1.2 A (DC) IC (2) 0.4 Collector-base voltage Collector current 1.5 1.0 (1) Parameter 0.5 4.5 1.6 0.4 0.4 1.5 (1) Base (2) Collector (3) Emitter 3.0 A (Pulse) ∗1 2 Collector power dissipation PC 0.5 2 W W Junction temperature Tj 150 °C Storage temperature Tstg −55 to +150 °C ∗1 Single pulse Pw=10ms ∗2 When mounted on a 40×40×0.7mm ceramic board. ∗2 Packaging specifications and hFE Type Package hFE Marking Code Basic ordering unit (pieces) 2SD2537 MPT3 V DV T100 1000 Electrical characteristics (Ta=25°C) Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cutoff current Emitter cutoff current Symbol BVCBO Collector-emitter saturation voltage Base-emitter saturation voltage VCE(sat) BVCEO BVEBO ICBO IEBO VBE(sat) DC current transfer ratio hFE fT Transition frequency Output capacitance Cob Min. 30 25 12 Max. − − − 0.3 0.3 0.3 Unit V V V − − − Typ. − − − − − − Conditions − 820 − − 1.2 1800 − − 200 20 − − V − MHz pF IC=10μA IC=1mA IE=10μA μA μA V VCB=30V VEB=12V IC/IB=500mA/10mA IC/IB=0.5A/10mA ∗ VCE/IC=5V/0.5A VCE=10V, IE=−50mA, f=100MHz VCB=10V, IE=0A, f=1MHz ∗ ∗Measured using pulse current. Electrical characteristics curves 1.4μA 1.2 1.2μA 1.0μA 0.8 0.8μA 0.6μA 0.4 0.4μA 0 0 0.1 0.2 0.2μA 0.3 IB=0 0.4 4.0mA 4.5mA 5.0mA 1.6 1.2 1.5mA 0.8 1.0mA 0.5mA 0.4 0 0.5 COLLECTOR TO EMITTER VOLTAGE : VCE (V) Fig.1 Ground emitter output characteristics( ) www.rohm.com c 2011 ROHM Co., Ltd. All rights reserved. ○ 2.0mA 0 0.1 0.2 IB=0 0.3 Ta=25°C Pulsed 0.4 0.5 1/2 500 200 100 50 20 10 5 2 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 BASE TO EMITTER VOLTAGE : VBE (V) COLLECTOR TO EMITTER VOLTAGE : VCE (V) Fig.2 Ground emitter output characteristics ( VCE=5V Pulsed 1000 −25°C 25°C 1.6μA 2.5mA 0°C 1.6 A 3.0m Ta=10 1.8μA 2000 A 3.5m 2.0μA COLLECTOR CURRENT : IC (mA) 2.0 Ta=25°C COLLECTOR CURRENT : IC (A) COLLECTOR CURRENT : IC (mA) 2.0 ) Fig.3 Ground emitter propagation characteristics 2011.05 - Rev.D 2SD2537 VCE=10V 2000 1000 1V 500 5V 3V 200 100 50 VCE=5V Pulsed 5000 DC CURRENT GAIN : hFE DC CURRENT GAIN : hFE 10000 Ta=25°C Pulsed 5000 Ta=100°C 25°C 2000 1000 −25°C 500 200 100 50 20 20 10 10 2 5 10 20 50 100 200 500 1000 2000 2 5 COLLECTOR CURRENT : IC (mA) 1000 IC/IB=50 Pulsed 500 200 100 50 Ta=100°C 25°C 20 −25°C 10 5 2 1 2 5 10 20 50 100 200 10000 500 1000 2000 1000 500 200 100 50 20 10 −1 −2 −5 −10 −20 −50 −100 −200 −500 −1000 EMITTER CURRENT : IE (mA) Fig.10 Gain bandwidth product vs. emitter current www.rohm.com c 2011 ROHM Co., Ltd. All rights reserved. ○ Ta=25°C Pulsed 500 200 100 50 IC/IB=100 20 50 10 10 5 2 1 2 ) IC/IB=10 50 2000 1000 500 100 200 100 50 20 10 5 10 20 50 100 200 500 1000 2000 10 20 50 100 200 500 1000 2000 Fig.6 Collector-emitter saturation voltage vs. collector current ( ) 10000 IC/IB=50 Pulsed 5000 Ta= −25°C 50 2000 1000 500 100 200 100 50 20 10 2 5 10 20 50 100 200 500 1000 2000 COLLECTOR CURRENT : IC (mA) Fig.8 Base-emitter saturation voltage vs. collector current ( ) 1000 5 COLLECTOR CURRENT : IC (mA) COLLECTOR CURRENT : IC (mA) COLLECTOR OUTPUT CAPACITANCE : Cob (pF) TRANSITION FREQUENCY : fT (MHz) 2000 500 1000 2000 Ta=25°C Pulsed 5000 2 Fig.7 Collector-emitter saturation voltage vs. collector current ( ) VCE=10V Ta=25°C Pulsed 50 100 200 Fig.5 DC current gain vs. collector current ( COLLECTOR CURRENT : IC (mA) 5000 20 1000 COLLECTOR CURRENT : IC (mA) BASE SATURATION VOLTAGE : VBE(sat) (mV) COLLECTOR SATURATION VOLTAGE : VBE(sat) (mV) Fig.4 DC current gain vs. collector current ( ) 10 BASE SATURATION VOLTAGE : VBE(sat) (mV) 10000 COLLECTOR SATURATION VOLTAGE : VBE(sat) (mV) Data Sheet Fig.9 Base-emitter saturation voltage vs. collector current ( ) f=1MHz IE=0A Ta=25°C 500 200 100 50 20 10 5 2 1 0.1 0.2 0.5 1 2 5 10 20 50 100 COLLECTOR TO BASE VOLTAGE : VCB (V) Fig.11 Collector output capacitance vs. collector-base voltage 2/2 2011.05 - Rev.D Notice Notes No copying or reproduction of this document, in part or in whole, is permitted without the consent of ROHM Co.,Ltd. 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