TSHA5500 Vishay Semiconductors Infrared Emitting Diode, 875 nm, GaAlAs FEATURES • Package type: leaded • Package form: T-1¾ • Dimensions (in mm): Ø 5 • Leads with stand-off • Peak wavelength: λp = 875 nm • High reliability • Angle of half intensity: ϕ = ± 24° 94 8390 • Low forward voltage • Suitable for high pulse current operation • Good spectral matching with Si photodetectors • Compliant to RoHS directive 2002/95/EC accordance to WEEE 2002/96/EC DESCRIPTION The TSHA5500 is an infrared, 875 nm emitting diode in GaAlAs on GaAlAs technology, molded in a clear, untinted plastic package. and in • Halogen-free according to IEC 61249-2-21 definition APPLICATIONS • Infrared remote control and free air data transmission systems with comfortable radiation angle • This emitter is dedicated to systems with panes in transmission space between emitter and detector, because of the low absorbtion of 875 nm radiation in glass PRODUCT SUMMARY COMPONENT Ie (mW/sr) TSHA5500 30 Note Test conditions see table “Basic Characteristics” ϕ (deg) λP (nm) tr (ns) ± 24 875 600 ORDERING INFORMATION ORDERING CODE PACKAGING REMARKS PACKAGE FORM Bulk MOQ: 4000 pcs, 4000 pcs/bulk T-1¾ TSHA5500 Note MOQ: minimum order quantity ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL VALUE Reverse voltage TEST CONDITION VR 5 UNIT V Forward current IF 100 mA 200 mA Peak forward current tp/T = 0.5, tp = 100 µs IFM Surge forward current tp = 100 µs IFSM 2.5 A PV 180 mW Power dissipation Tj 100 °C Operating temperature range Tamb - 40 to + 85 °C Storage temperature range Tstg - 40 to + 100 °C t ≤ 5 s, 2 mm from case Tsd 260 °C J-STD-051, leads 7 mm, soldered on PCB RthJA 230 K/W Junction temperature Soldering temperature Thermal resistance junction/ambient Note Tamb = 25 °C, unless otherwise specified Document Number: 81020 Rev. 1.8, 08-Oct-09 For technical questions, contact: [email protected] www.vishay.com 1 TSHA5500 Infrared Emitting Diode, 875 nm, GaAlAs Vishay Semiconductors 200 120 160 IF - Forward Current (mA) PV - Power Dissipation (mW) 180 140 120 RthJA = 230 K/W 100 80 60 40 100 80 RthJA = 230 K/W 60 40 20 20 0 0 10 21142 20 30 40 50 60 70 80 0 90 100 Tamb - Ambient Temperature (°C) 0 21143 Fig. 1 - Power Dissipation Limit vs. Ambient Temperature 10 20 30 40 50 60 70 80 90 100 Tamb - Ambient Temperature (°C) Fig. 2 - Forward Current Limit vs. Ambient Temperature BASIC CHARACTERISTICS PARAMETER Forward voltage Temperature coefficient of VF Reverse current Junction capacitance Radiant intensity Radiant power Temperature coefficient of φe TEST CONDITION SYMBOL IF = 100 mA, tp = 20 ms IF = 1 A, tp = 100 µs IF = 100 mA MIN. TYP. MAX. UNIT VF 1.5 1.8 V VF 2.8 3.5 TKVF - 1.6 VR = 5 V IR VR = 0 V, f = 1 MHz, E = 0 Cj IF = 100 mA, tp = 20 ms Ie 16 30 128 V mV/K 100 µA 48 mW/sr 20 pF IF = 1 A, tp = 100 µs Ie 240 mW/sr IF = 100 mA, tp = 20 ms φe 24 mW IF = 20 mA TKφe - 0.7 %/K ϕ ± 24 deg nm Angle of half intensity Peak wavelength IF = 100 mA λp 875 Spectral bandwidth IF = 100 mA Δλ 80 nm Temperature coefficient of λp IF = 100 mA TKλp 0.2 nm/K IF = 100 mA tr 600 ns IF = 1 A tr 300 ns IF = 100 mA tf 600 ns tf 300 ns d 2.2 mm Rise time Fall time IF = 1 A Virtual source diameter Note Tamb = 25 °C, unless otherwise specified www.vishay.com 2 For technical questions, contact: [email protected] Document Number: 81020 Rev. 1.8, 08-Oct-09 TSHA5500 Infrared Emitting Diode, 875 nm, GaAlAs Vishay Semiconductors BASIC CHARACTERISTICS Tamb = 25 °C, unless otherwise specified 1000 Ie - Radiant Intensity (mW/sr) IF - Forward Current (A) 10 1 I FSM = 2.5 A (single pause) t p /T= 0.01 10 0 0.05 0.1 0.2 0.5 10 -1 10 -2 94 8003 100 10 TSHA 5500 1 10 -1 10 0 10 1 t p - Pulse Duration (ms) 10 0 10 2 10 3 10 4 1000 Φe - Radiant Power (mW) IF - Forward Current (mA) 10 4 tp = 100 µs tp/T= 0.001 10 3 10 2 100 10 1 0.1 0 1 2 3 4 V F - Forward Voltage (V) 94 8005 10 0 10 1 10 2 10 3 I F - Forward Current (mA) 94 8015 e 10 4 Fig. 7 - Radiant Power vs. Forward Current Fig. 4 - Forward Current vs. Forward Voltage 1.6 1.2 1.1 1.2 IF = 10 mA I e rel; Φe rel VF rel - Relative Forward Voltage (V) 10 2 Fig. 6 - Radiant Intensity vs. Forward Current Fig. 3 - Pulse Forward Current vs. Pulse Duration 10 1 10 1 IF - Forward Current (mA) 948014-1 1.0 0.9 I F = 20 mA 0.8 0.4 0.8 0 - 10 0 10 0.7 0 94 7990 20 40 60 80 100 Tamb - Ambient Temperature (°C) Fig. 5 - Relative Forward Voltage vs. Ambient Temperature Document Number: 81020 Rev. 1.8, 08-Oct-09 94 8020 50 100 140 Tamb - Ambient Temperature (°C) Fig. 8 - Relative Radiant Intensity/Power vs. Ambient Temperature For technical questions, contact: [email protected] www.vishay.com 3 TSHA5500 Vishay Semiconductors Infrared Emitting Diode, 875 nm, GaAlAs 0° I e rel - Relative Radiant Intensity Φ e - Relative Radiant Power 1.25 1.0 0.75 0.5 0.25 I F = 100 mA Φ e ( λ ) rel = Φ e ( λ ) / Φ e ( λ p ) 0 780 20° 30° 40° 1.0 0.9 50° 0.8 60° 70° 0.7 80° 980 880 0.6 λ - Wavelenght (nm) 94 8000 10° 0.4 0.2 0 0.2 0.4 0.6 94 8016 e Fig. 9 - Relative Radiant Power vs. Wavelength Fig. 10 - Relative Radiant Intensity vs. Angular Displacement PACKAGE DIMENSIONS in millimeters C R 2.49 (sphere) < 0.7 (4.4) 7.7 ± 0.15 8.7 ± 0.3 35.2 ± 0.55 12.2 ± 0.3 Ø 5.8 ± 0.15 A Area not plane 1.1 ± 0.25 1 min. Ø 5 ± 0.15 technical drawings according to DIN specifications 0.5 0.5 + 0.15 - 0.05 + 0.15 - 0.05 2.54 nom. 6.544-5258.08-4 Issue: 4; 19.05.09 14435 www.vishay.com 4 For technical questions, contact: [email protected] Document Number: 81020 Rev. 1.8, 08-Oct-09 Legal Disclaimer Notice Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. 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