TSHA5200, TSHA5201, TSHA5202, TSHA5203 Vishay Semiconductors Infrared Emitting Diode, RoHS Compliant, 875 nm, GaAlAs FEATURES • Package type: leaded • Package form: T-1¾ • Dimensions (in mm): Ø 5 • Leads with stand-off • Peak wavelength: λp = 875 nm • High reliability • Angle of half intensity: ϕ = ± 12° 94 8390 • Low forward voltage • Suitable for high pulse current operation • Lead (Pb)-free component in accordance RoHS 2002/95/EC and WEEE 2002/96/EC DESCRIPTION with APPLICATIONS The TSHA520. series are infrared, 875 nm emitting diodes in GaAlAs technology, molded in a clear, untinted plastic package. • Infrared remote control and free air data transmission systems • This emitter series is dedicated to systems with panes in transmission space between emitter and detector, because of the low absorbtion of 875 nm radiation in glass PRODUCT SUMMARY Ie (mW/sr) ϕ (deg) λP (nm) tr (ns) TSHA5200 40 ± 12 875 600 TSHA5201 50 ± 12 875 600 TSHA5202 60 ± 12 875 600 TSHA5203 65 ± 12 875 600 COMPONENT Note Test conditions see table “Basic Characteristics” ORDERING INFORMATION PACKAGING REMARKS PACKAGE FORM TSHA5200 ORDERING CODE Bulk MOQ: 4000 pcs, 4000 pcs/bulk T-1¾ TSHA5201 Bulk MOQ: 4000 pcs, 4000 pcs/bulk T-1¾ TSHA5202 Bulk MOQ: 4000 pcs, 4000 pcs/bulk T-1¾ TSHA5203 Bulk MOQ: 4000 pcs, 4000 pcs/bulk T-1¾ Note MOQ: minimum order quantity ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL VALUE Reverse voltage TEST CONDITION VR 5 UNIT V Forward current IF 100 mA 200 mA Peak forward current tp/T = 0.5, tp = 100 µs IFM Surge forward current tp = 100 µs IFSM 2.5 A PV 180 mW Power dissipation Document Number: 81019 Rev. 1.7, 05-Sep-08 For technical questions, contact: [email protected] www.vishay.com 151 TSHA5200, TSHA5201, TSHA5202, TSHA5203 Infrared Emitting Diode, RoHS Compliant, 875 nm, GaAlAs Vishay Semiconductors ABSOLUTE MAXIMUM RATINGS PARAMETER TEST CONDITION SYMBOL Junction temperature Operating temperature range Storage temperature range UNIT Tj 100 °C Tamb - 40 to + 85 °C Tstg - 40 to + 100 °C t ≤ 5 s, 2 mm from case Tsd 260 °C J-STD-051, leads 7 mm, soldered on PCB RthJA 230 K/W Soldering temperature Thermal resistance junction/ambient VALUE Note Tamb = 25 °C, unless otherwise specified 200 120 160 IF - Forward Current (mA) PV - Power Dissipation (mW) 180 140 120 RthJA = 230 K/W 100 80 60 40 100 80 RthJA = 230 K/W 60 40 20 20 0 0 0 10 21142 20 30 40 50 60 70 80 90 100 0 Tamb - Ambient Temperature (°C) 21143 Fig. 1 - Power Dissipation Limit vs. Ambient Temperature 10 20 30 40 50 60 70 80 90 100 Tamb - Ambient Temperature (°C) Fig. 2 - Forward Current Limit vs. Ambient Temperature BASIC CHARACTERISTICS PARAMETER Forward voltage Temperature coefficient of VF Reverse current TEST CONDITION SYMBOL TYP. MAX. IF = 100 mA, tp = 20 ms VF MIN. 1.5 1.8 IF = 100 mA TKVF - 1.6 UNIT V mV/K VR = 5 V IR VR = 0 V, f = 1 MHz, E = 0 Cj 20 pF IF = 20 mA TKφe - 0.7 %/K ϕ ± 12 deg Peak wavelength IF = 100 mA λp 875 nm Spectral bandwidth IF = 100 mA Δλ 80 nm Temperature coefficient of λp IF = 100 mA TKλp 0.2 nm/K IF = 100 mA tr 600 ns IF = 1.5 A tr 300 ns IF = 100 mA tf 600 ns IF = 1.5 A tf 300 ns d 3.7 mm Junction capacitance Temperature coefficient of φe Angle of half intensity Rise time Fall time Virtual source diameter 100 µA Note Tamb = 25 °C, unless otherwise specified www.vishay.com 152 For technical questions, contact: [email protected] Document Number: 81019 Rev. 1.7, 05-Sep-08 TSHA5200, TSHA5201, TSHA5202, TSHA5203 Infrared Emitting Diode, RoHS Compliant, Vishay Semiconductors 875 nm, GaAlAs TYPE DEDICATED CHARACTERISTICS PARAMETER TEST CONDITION IF = 1.5 A, tp = 100 µs Forward voltage IF = 100 mA, tp = 20 µs Radiant intensity IF = 1.5 A, tp = 100 µs IF = 100 mA, tp = 20 µs Radiant power PART SYMBOL TYP. MAX. UNIT TSHA5200 VF MIN. 3.2 4.9 V TSHA5201 VF 3.2 4.9 V TSHA5202 VF 3.2 4.5 V TSHA5203 VF 3.2 4.5 V TSHA5200 Ie 25 40 125 mW/sr TSHA5201 Ie 30 50 125 mW/sr TSHA5202 Ie 36 60 125 mW/sr TSHA5203 Ie 50 65 125 mW/sr TSHA5200 Ie 300 500 mW/sr TSHA5201 Ie 400 600 mW/sr TSHA5202 Ie 500 700 mW/sr TSHA5203 Ie 600 800 mW/sr TSHA5200 φe 22 mW TSHA5201 φe 23 mW TSHA5202 φe 24 mW TSHA5203 φe 25 mW Note Tamb = 25 °C, unless otherwise specified BASIC CHARACTERISTICS Tamb = 25 °C, unless otherwise specified 10 4 IF - Forward Current (mA) IF - Forward Current (A) 10 1 I FSM = 2.5 A (Single Pause) t p /T= 0.01 10 0 0.05 0.1 0.2 tp = 100 µs tp/T= 0.001 10 3 10 2 0.5 10 -1 10 -2 94 8003 10 1 10 -1 10 0 10 1 t p - Pulse Duration (ms) 10 2 Fig. 3 - Pulse Forward Current vs. Pulse Duration Document Number: 81019 Rev. 1.7, 05-Sep-08 94 8005 0 1 2 3 4 V F - Forward Voltage (V) Fig. 4 - Forward Current vs. Forward Voltage For technical questions, contact: [email protected] www.vishay.com 153 TSHA5200, TSHA5201, TSHA5202, TSHA5203 Vishay Semiconductors Infrared Emitting Diode, RoHS Compliant, 875 nm, GaAlAs 1.6 1.1 1.2 IF = 10 mA I e rel; Φe rel VF rel - Relative Forward Voltage (V) 1.2 1.0 0.9 I F = 20 mA 0.8 0.4 0.8 0.7 0 20 40 60 80 Tamb - Ambient Temperature (°C) 94 7990 0 - 10 0 10 100 Fig. 5 - Relative Forward Voltage vs. Ambient Temperature 50 140 100 Tamb - Ambient Temperature (°C) 94 8020 Fig. 8 - Relative Radiant Intensity/Power vs. Ambient Temperature 1000 1.25 Φ e - Relative Radiant Power TSHA 5202 100 TSHA 5201 10 TSHA 5200 1.0 0.75 0.5 0.25 I F = 100 mA Φ e ( λ ) rel = Φ e ( λ ) / Φ e ( λ p ) 1 10 0 94 8006 10 1 10 2 10 3 I F - Forward Current (mA) 0 780 10 4 Fig. 6 - Radiant Intensity vs. Forward Current Fig. 9 - Relative Radiant Power vs. Wavelength 0° 1000 10° 20° 30° Ie rel - Relative Radiant Intensity Φe - Radiant Power (mW) 980 880 λ - Wavelenght (nm) 94 8000 100 10 1 40° 1.0 0.9 50° 0.8 60° 70° 0.7 ϕ - Angular Displacement I e - Radiant Intensity (mW/sr) TSHA 5203 80° 0.1 10 0 94 8007 10 1 10 2 10 3 I F - Forward Current (mA) Fig. 7 - Radiant Power vs. Forward Current www.vishay.com 154 0.6 10 4 0.4 0.2 0 94 8008 Fig. 10 - Relative Radiant Intensity vs. Angular Displacement For technical questions, contact: [email protected] Document Number: 81019 Rev. 1.7, 05-Sep-08 TSHA5200, TSHA5201, TSHA5202, TSHA5203 Infrared Emitting Diode, RoHS Compliant, Vishay Semiconductors 875 nm, GaAlAs PACKAGE DIMENSIONS in millimeters 9612121 Document Number: 81019 Rev. 1.7, 05-Sep-08 For technical questions, contact: [email protected] www.vishay.com 155 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1