VISHAY TSHA5202

TSHA5200, TSHA5201, TSHA5202, TSHA5203
Vishay Semiconductors
Infrared Emitting Diode, RoHS Compliant, 875 nm, GaAlAs
FEATURES
• Package type: leaded
• Package form: T-1¾
• Dimensions (in mm): Ø 5
• Leads with stand-off
• Peak wavelength: λp = 875 nm
• High reliability
• Angle of half intensity: ϕ = ± 12°
94 8390
• Low forward voltage
• Suitable for high pulse current operation
• Lead (Pb)-free component in accordance
RoHS 2002/95/EC and WEEE 2002/96/EC
DESCRIPTION
with
APPLICATIONS
The TSHA520. series are infrared, 875 nm emitting diodes in
GaAlAs technology, molded in a clear, untinted plastic
package.
• Infrared remote control and free air data transmission
systems
• This emitter series is dedicated to systems with panes in
transmission space between emitter and detector,
because of the low absorbtion of 875 nm radiation in glass
PRODUCT SUMMARY
Ie (mW/sr)
ϕ (deg)
λP (nm)
tr (ns)
TSHA5200
40
± 12
875
600
TSHA5201
50
± 12
875
600
TSHA5202
60
± 12
875
600
TSHA5203
65
± 12
875
600
COMPONENT
Note
Test conditions see table “Basic Characteristics”
ORDERING INFORMATION
PACKAGING
REMARKS
PACKAGE FORM
TSHA5200
ORDERING CODE
Bulk
MOQ: 4000 pcs, 4000 pcs/bulk
T-1¾
TSHA5201
Bulk
MOQ: 4000 pcs, 4000 pcs/bulk
T-1¾
TSHA5202
Bulk
MOQ: 4000 pcs, 4000 pcs/bulk
T-1¾
TSHA5203
Bulk
MOQ: 4000 pcs, 4000 pcs/bulk
T-1¾
Note
MOQ: minimum order quantity
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
VALUE
Reverse voltage
TEST CONDITION
VR
5
UNIT
V
Forward current
IF
100
mA
200
mA
Peak forward current
tp/T = 0.5, tp = 100 µs
IFM
Surge forward current
tp = 100 µs
IFSM
2.5
A
PV
180
mW
Power dissipation
Document Number: 81019
Rev. 1.7, 05-Sep-08
For technical questions, contact: [email protected]
www.vishay.com
151
TSHA5200, TSHA5201, TSHA5202, TSHA5203
Infrared Emitting Diode, RoHS Compliant,
875 nm, GaAlAs
Vishay Semiconductors
ABSOLUTE MAXIMUM RATINGS
PARAMETER
TEST CONDITION
SYMBOL
Junction temperature
Operating temperature range
Storage temperature range
UNIT
Tj
100
°C
Tamb
- 40 to + 85
°C
Tstg
- 40 to + 100
°C
t ≤ 5 s, 2 mm from case
Tsd
260
°C
J-STD-051, leads 7 mm, soldered on PCB
RthJA
230
K/W
Soldering temperature
Thermal resistance junction/ambient
VALUE
Note
Tamb = 25 °C, unless otherwise specified
200
120
160
IF - Forward Current (mA)
PV - Power Dissipation (mW)
180
140
120
RthJA = 230 K/W
100
80
60
40
100
80
RthJA = 230 K/W
60
40
20
20
0
0
0
10
21142
20
30
40
50
60
70 80
90 100
0
Tamb - Ambient Temperature (°C)
21143
Fig. 1 - Power Dissipation Limit vs. Ambient Temperature
10
20 30 40
50 60 70 80
90 100
Tamb - Ambient Temperature (°C)
Fig. 2 - Forward Current Limit vs. Ambient Temperature
BASIC CHARACTERISTICS
PARAMETER
Forward voltage
Temperature coefficient of VF
Reverse current
TEST CONDITION
SYMBOL
TYP.
MAX.
IF = 100 mA, tp = 20 ms
VF
MIN.
1.5
1.8
IF = 100 mA
TKVF
- 1.6
UNIT
V
mV/K
VR = 5 V
IR
VR = 0 V, f = 1 MHz, E = 0
Cj
20
pF
IF = 20 mA
TKφe
- 0.7
%/K
ϕ
± 12
deg
Peak wavelength
IF = 100 mA
λp
875
nm
Spectral bandwidth
IF = 100 mA
Δλ
80
nm
Temperature coefficient of λp
IF = 100 mA
TKλp
0.2
nm/K
IF = 100 mA
tr
600
ns
IF = 1.5 A
tr
300
ns
IF = 100 mA
tf
600
ns
IF = 1.5 A
tf
300
ns
d
3.7
mm
Junction capacitance
Temperature coefficient of φe
Angle of half intensity
Rise time
Fall time
Virtual source diameter
100
µA
Note
Tamb = 25 °C, unless otherwise specified
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For technical questions, contact: [email protected]
Document Number: 81019
Rev. 1.7, 05-Sep-08
TSHA5200, TSHA5201, TSHA5202, TSHA5203
Infrared Emitting Diode, RoHS Compliant, Vishay Semiconductors
875 nm, GaAlAs
TYPE DEDICATED CHARACTERISTICS
PARAMETER
TEST CONDITION
IF = 1.5 A, tp = 100 µs
Forward voltage
IF = 100 mA, tp = 20 µs
Radiant intensity
IF = 1.5 A, tp = 100 µs
IF = 100 mA, tp = 20 µs
Radiant power
PART
SYMBOL
TYP.
MAX.
UNIT
TSHA5200
VF
MIN.
3.2
4.9
V
TSHA5201
VF
3.2
4.9
V
TSHA5202
VF
3.2
4.5
V
TSHA5203
VF
3.2
4.5
V
TSHA5200
Ie
25
40
125
mW/sr
TSHA5201
Ie
30
50
125
mW/sr
TSHA5202
Ie
36
60
125
mW/sr
TSHA5203
Ie
50
65
125
mW/sr
TSHA5200
Ie
300
500
mW/sr
TSHA5201
Ie
400
600
mW/sr
TSHA5202
Ie
500
700
mW/sr
TSHA5203
Ie
600
800
mW/sr
TSHA5200
φe
22
mW
TSHA5201
φe
23
mW
TSHA5202
φe
24
mW
TSHA5203
φe
25
mW
Note
Tamb = 25 °C, unless otherwise specified
BASIC CHARACTERISTICS
Tamb = 25 °C, unless otherwise specified
10 4
IF - Forward Current (mA)
IF - Forward Current (A)
10 1
I FSM = 2.5 A (Single Pause)
t p /T= 0.01
10 0
0.05
0.1
0.2
tp = 100 µs
tp/T= 0.001
10 3
10 2
0.5
10 -1
10 -2
94 8003
10 1
10 -1
10 0
10 1
t p - Pulse Duration (ms)
10 2
Fig. 3 - Pulse Forward Current vs. Pulse Duration
Document Number: 81019
Rev. 1.7, 05-Sep-08
94 8005
0
1
2
3
4
V F - Forward Voltage (V)
Fig. 4 - Forward Current vs. Forward Voltage
For technical questions, contact: [email protected]
www.vishay.com
153
TSHA5200, TSHA5201, TSHA5202, TSHA5203
Vishay Semiconductors
Infrared Emitting Diode, RoHS Compliant,
875 nm, GaAlAs
1.6
1.1
1.2
IF = 10 mA
I e rel; Φe rel
VF rel - Relative Forward Voltage (V)
1.2
1.0
0.9
I F = 20 mA
0.8
0.4
0.8
0.7
0
20
40
60
80
Tamb - Ambient Temperature (°C)
94 7990
0
- 10 0 10
100
Fig. 5 - Relative Forward Voltage vs. Ambient Temperature
50
140
100
Tamb - Ambient Temperature (°C)
94 8020
Fig. 8 - Relative Radiant Intensity/Power vs. Ambient Temperature
1000
1.25
Φ e - Relative Radiant Power
TSHA 5202
100
TSHA 5201
10
TSHA 5200
1.0
0.75
0.5
0.25
I F = 100 mA
Φ e ( λ ) rel = Φ e ( λ ) / Φ e ( λ p )
1
10 0
94 8006
10 1
10 2
10 3
I F - Forward Current (mA)
0
780
10 4
Fig. 6 - Radiant Intensity vs. Forward Current
Fig. 9 - Relative Radiant Power vs. Wavelength
0°
1000
10°
20°
30°
Ie rel - Relative Radiant Intensity
Φe - Radiant Power (mW)
980
880
λ - Wavelenght (nm)
94 8000
100
10
1
40°
1.0
0.9
50°
0.8
60°
70°
0.7
ϕ - Angular Displacement
I e - Radiant Intensity (mW/sr)
TSHA 5203
80°
0.1
10 0
94 8007
10 1
10 2
10 3
I F - Forward Current (mA)
Fig. 7 - Radiant Power vs. Forward Current
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154
0.6
10 4
0.4
0.2
0
94 8008
Fig. 10 - Relative Radiant Intensity vs. Angular Displacement
For technical questions, contact: [email protected]
Document Number: 81019
Rev. 1.7, 05-Sep-08
TSHA5200, TSHA5201, TSHA5202, TSHA5203
Infrared Emitting Diode, RoHS Compliant, Vishay Semiconductors
875 nm, GaAlAs
PACKAGE DIMENSIONS in millimeters
9612121
Document Number: 81019
Rev. 1.7, 05-Sep-08
For technical questions, contact: [email protected]
www.vishay.com
155
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Vishay
Disclaimer
All product specifications and data are subject to change without notice.
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(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein
or in any other disclosure relating to any product.
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information provided herein to the maximum extent permitted by law. The product specifications do not expand or
otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed
therein, which apply to these products.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this
document or by any conduct of Vishay.
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Document Number: 91000
Revision: 18-Jul-08
www.vishay.com
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