TSHA5500, TSHA5501, TSHA5502, TSHA5503 Vishay Semiconductors Infrared Emitting Diode, RoHS Compliant, 875 nm, GaAlAs FEATURES • Package type: leaded • Package form: T-1¾ • Dimensions (in mm): Ø 5 • Leads with stand-off • Peak wavelength: λp = 875 nm • High reliability • Angle of half intensity: ϕ = ± 24° • Low forward voltage 94 8390 • Suitable for high pulse current operation • Good spectral matching with Si photodetectors DESCRIPTION • Lead (Pb)-free component in accordance RoHS 2002/95/EC and WEEE 2002/96/EC The TSHA550. series are infrared, 875 nm emitting diodes in GaAlAs on GaAlAs technology, molded in a clear, untinted plastic package. APPLICATIONS with • Infrared remote control and free air data transmission systems with comfortable radiation angle • This emitter series is dedicated to systems with panes in transmission space between emitter and detector, because of the low absorbtion of 875 nm radiation in glass PRODUCT SUMMARY Ie (mW/sr) ϕ (deg) λP (nm) tr (ns) TSHA5500 20 ± 24 875 600 TSHA5501 25 ± 24 875 600 TSHA5502 30 ± 24 875 600 TSHA5503 35 ± 24 875 600 COMPONENT Note Test conditions see table “Basic Characteristics” ORDERING INFORMATION ORDERING CODE PACKAGING REMARKS PACKAGE FORM TSHA5500 Bulk MOQ: 4000 pcs, 4000 pcs/bulk T-1¾ TSHA5501 Bulk MOQ: 4000 pcs, 4000 pcs/bulk T-1¾ TSHA5502 Bulk MOQ: 4000 pcs, 4000 pcs/bulk T-1¾ TSHA5503 Bulk MOQ: 4000 pcs, 4000 pcs/bulk T-1¾ Note MOQ: minimum order quantity ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL VALUE Reverse voltage TEST CONDITION VR 5 UNIT V Forward current IF 100 mA mA Peak forward current tp/T = 0.5, tp = 100 µs IFM 200 Surge forward current tp = 100 µs IFSM 2.5 A PV 180 mW Power dissipation www.vishay.com 156 For technical questions, contact: [email protected] Document Number: 81020 Rev. 1.5, 05-Sep-08 TSHA5500, TSHA5501, TSHA5502, TSHA5503 Infrared Emitting Diode, RoHS Compliant, Vishay Semiconductors 875 nm, GaAlAs ABSOLUTE MAXIMUM RATINGS PARAMETER TEST CONDITION SYMBOL Junction temperature VALUE UNIT Tj 100 °C Operating temperature range Tamb - 40 to + 85 °C Storage temperature range Tstg - 40 to + 100 °C t ≤ 5 s, 2 mm from case Tsd 260 °C J-STD-051, leads 7 mm, soldered on PCB RthJA 230 K/W Soldering temperature Thermal resistance junction/ambient Note Tamb = 25 °C, unless otherwise specified 120 200 160 IF - Forward Current (mA) PV - Power Dissipation (mW) 180 140 120 RthJA = 230 K/W 100 80 60 40 100 80 RthJA = 230 K/W 60 40 20 20 0 0 0 10 21142 20 30 40 50 60 70 80 90 100 0 Tamb - Ambient Temperature (°C) 21143 Fig. 1 - Power Dissipation Limit vs. Ambient Temperature 10 20 30 40 50 60 70 80 90 100 Tamb - Ambient Temperature (°C) Fig. 2 - Forward Current Limit vs. Ambient Temperature BASIC CHARACTERISTICS PARAMETER Forward voltage Temperature coefficient of VF Reverse current TEST CONDITION SYMBOL TYP. MAX. IF = 100 mA, tp = 20 ms VF MIN. 1.5 1.8 IF = 100 mA TKVF - 1.6 UNIT V mV/K VR = 5 V IR VR = 0 V, f = 1 MHz, E = 0 Cj 20 pF IF = 20 mA TKφe - 0.7 %/K ϕ ± 24 deg Peak wavelength IF = 100 mA λp 875 nm Spectral bandwidth IF = 100 mA Δλ 80 nm Temperature coefficient of λp IF = 100 mA TKλp 0.2 nm/K IF = 100 mA tr 600 ns IF = 1.5 A tr 300 ns IF = 100 mA tf 600 ns IF = 1.5 A tf 300 ns d 2.2 mm Junction capacitance Temperature coefficient of φe Angle of half intensity Rise time Fall time Virtual source diameter 100 µA Note Tamb = 25 °C, unless otherwise specified Document Number: 81020 Rev. 1.5, 05-Sep-08 For technical questions, contact: [email protected] www.vishay.com 157 TSHA5500, TSHA5501, TSHA5502, TSHA5503 Vishay Semiconductors Infrared Emitting Diode, RoHS Compliant, 875 nm, GaAlAs TYPE DEDICATED CHARACTERISTICS PARAMETER TEST CONDITION IF = 1.5 A, tp = 100 µs Forward voltage IF = 100 mA, tp = 20 ms Radiant intensity IF = 1.5 A, tp = 100 µs IF = 100 mA, tp = 20 ms Radiant power PART SYMBOL TYP. MAX. UNIT TSHA5500 VF MIN. 3.2 4.9 V TSHA5501 VF 3.2 4.9 V TSHA5502 VF 3.2 4.5 V TSHA5203 VF 3.2 4.5 V TSHA5500 Ie 12 20 60 mW/sr TSHA5501 Ie 16 25 60 mW/sr TSHA5502 Ie 20 30 60 mW/sr TSHA5503 Ie 24 35 60 mW/sr TSHA5500 Ie 150 240 mW/sr TSHA5501 Ie 200 300 mW/sr TSHA5502 Ie 250 360 mW/sr TSHA5503 Ie 300 420 mW/sr TSHA5500 φe 22 mW TSHA5501 φe 23 mW TSHA5502 φe 24 mW TSHA5503 φe 25 mW Note Tamb = 25 °C, unless otherwise specified BASIC CHARACTERISTICS Tamb = 25 °C, unless otherwise specified 10 4 IF - Forward Current (mA) IF - Forward Current (A) 10 1 I FSM = 2.5 A (Single Pause) t p /T= 0.01 10 0 0.05 0.1 0.2 tp = 100 µs tp/T= 0.001 10 3 10 2 0.5 10 -1 10 -2 94 8003 10 1 10 -1 10 0 10 1 t p - Pulse Duration (ms) 10 2 Fig. 3 - Pulse Forward Current vs. Pulse Duration www.vishay.com 158 94 8005 0 1 2 3 4 V F - Forward Voltage (V) Fig. 4 - Forward Current vs. Forward Voltage For technical questions, contact: [email protected] Document Number: 81020 Rev. 1.5, 05-Sep-08 TSHA5500, TSHA5501, TSHA5502, TSHA5503 Infrared Emitting Diode, RoHS Compliant, Vishay Semiconductors 875 nm, GaAlAs 1.6 1.1 1.2 IF = 10 mA I F = 20 mA I e rel; Φe rel VF rel - Relative Forward Voltage (V) 1.2 1.0 0.9 0.8 0.4 0.8 0.7 0 20 40 60 80 Tamb - Ambient Temperature (°C) 94 7990 0 - 10 0 10 100 Fig. 5 - Relative Forward Voltage vs. Ambient Temperature Φ e - Relative Radiant Power I e - Radiant Intensity (mW/sr) 1.25 TSHA 5503 TSHA 5502 100 TSHA 5501 10 TSHA 5500 1.0 0.75 0.5 0.25 I F = 100 mA Φ e ( λ ) rel = Φ e ( λ ) / Φ e ( λ p ) 1 94 8014 e 140 100 Fig. 8 - Relative Radiant Intensity/Power vs. Ambient Temperature 1000 10 0 50 Tamb - Ambient Temperature (°C) 94 8020 10 1 10 2 10 3 I F - Forward Current (mA) 0 780 10 4 94 8000 Fig. 6 - Radiant Intensity vs. Forward Current 980 880 λ - Wavelenght (nm) Fig. 9 - Relative Radiant Power vs. Wavelength 0° 10° 20° I e rel - Relative Radiant Intensity Φe - Radiant Power (mW) 1000 100 10 1 30° 40° 1.0 0.9 50° 0.8 60° 70° 0.7 80° 0.1 10 0 94 8015 e 10 1 10 2 10 3 I F - Forward Current (mA) Fig. 7 - Radiant Power vs. Forward Current Document Number: 81020 Rev. 1.5, 05-Sep-08 0.6 10 4 0.4 0.2 0 0.2 0.4 0.6 94 8016 e Fig. 10 - Relative Radiant Intensity vs. Angular Displacement For technical questions, contact: [email protected] www.vishay.com 159 TSHA5500, TSHA5501, TSHA5502, TSHA5503 Infrared Emitting Diode, RoHS Compliant, 875 nm, GaAlAs Vishay Semiconductors PACKAGE DIMENSIONS in millimeters C 5.8 ± 0.15 A < 0.7 7.7 ± 0.15 ± 0.3 8.7 ± 0.55 12.2 ± 0.3 (4.4) R 2.49 (sphere) 35.2 Area not plane + 0.2 - 0.1 5 ± 0.15 1.5 ± 0.25 1.2 + 0.15 technical drawings according to DIN specifications 0.5 - 0.05 0.5 + 0.15 - 0.05 2.54 nom. 6.544-5258.08-4 Issue: 3; 08.11.99 14435 www.vishay.com 160 For technical questions, contact: [email protected] Document Number: 81020 Rev. 1.5, 05-Sep-08 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1