VSMY7852X01 Vishay Semiconductors High Power Infrared Emitting Diode, 850 nm, Surface Emitter Technology FFEATURES • • • • • • • • • • 20783 • • • • • DESCRIPTION VSMY7852X01 is an infrared, 850 nm emitting diode based on surface emitter technology with high radiant power and high speed, molded in low thermal resistance Little Star package. A 20 mil chip provides outstanding low forward voltage and allows DC operation of the device up to 250 mA. Package type: surface mount Package form: Little Star® Dimensions (L x W x H in mm): 6.0 x 7.0 x 1.5 Peak wavelength: p = 850 nm High reliability High radiant power High radiant intensity Angle of half intensity: = ± 60° Low forward voltage Designed for high drive currents: up to 250 mA DC and up to 1.5 A pulses Low thermal resistance: RthJP = 15 K/W Floor life: 4 weeks, MSL 2a, acc. J-STD-020 Lead (Pb)-free reflow soldering AEC-Q101 qualified Compliant to RoHS Directive 2002/95/EC and in accordance to WEEE 2002/96/EC AAPPLICATIONS • Infrared illumination for CMOS cameras (CCTV) • Driver assistance systems • Machine vision IR data transmission PRODUCT SUMMARY COMPONENT Ie (mW/sr) (deg) p (nm) tr (ns) VSMY7852X01 42 ± 60 850 15 Note • Test conditions see table “Basic Characteristics” ORDERING INFORMATION ORDERING CODE PACKAGING REMARKS PACKAGE FORM VSMY7852X01-GS08 Tape and reel MOQ: 2000 pcs, 2000 pcs/reel Little Star Note • MOQ: minimum order quantity ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified) PARAMETER SYMBOL VALUE Reverse voltage TEST CONDITION VR 5 UNIT V Forward current IF 250 mA 500 mA Peak forward current tp/T = 0.5, tp 100 μs IFM Surge forward current tp = 100 μs IFSM 1.5 A PV 500 mW Power dissipation Junction temperature Operating temperature range Storage temperature range Soldering temperature Thermal resistance junction/pin Document Number: 81146 Rev. 1.0, 29-Apr-11 Tj 125 °C Tamb - 40 to + 100 °C °C Tstg - 40 to + 100 Acc. figure 7, J-STD-20 Tsd 260 °C Acc. J-STD-051, soldered on PCB RthJP 15 K/W For technical questions, contact: [email protected] www.vishay.com 1 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VSMY7852X01 Vishay Semiconductors High Power Infrared Emitting Diode, 600 300 500 250 IF - Forward Current (mA) PV - Power Dissipation (mW) 850 nm, Surface Emitter Technology 400 300 200 RthJP = 15 K/W 100 200 150 100 RthJP = 15 K/W 50 0 0 0 21779 20 40 60 80 100 120 Tamb - Ambient Temperature (°C) 0 20 Fig. 1 - Power Dissipation Limit vs. Ambient Temperature 40 60 80 100 120 Tamb - Ambient Temperature (°C) 21780 Fig. 2 - Forward Current Limit vs. Ambient Temperature BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) PARAMETER Forward voltage Temperature coefficient of VF Reverse current Radiant intensity TEST CONDITION SYMBOL MIN. TYP. MAX. 2.0 UNIT IF = 250 mA, tp = 20 ms VF 1.8 IF = 1.5 A, tp = 100 μs VF 2.8 V IF = 1 mA TKVF - 1.5 mV/K not designed for reverse operation VR = 5 V IR IF = 250 mA, tp = 20 ms Ie IF = 1.5 A, tp = 100 μs Ie 30 42 220 90 V μA mW/sr mW/sr IF = 250 mA, tp = 20 ms e 130 mW IF = 1 A TKe - 0.5 %/K ± 60 deg Peak wavelength IF = 250 mA p 850 nm Spectral bandwidth IF = 250 mA 30 nm Temperature coefficient of p IF = 250 mA TKp 0.2 nm/K Rise time IF = 250 mA tr 8 ns Fall time IF = 250 mA tf 10 ns Radiant power Temperature coefficient of e Angle of half intensity www.vishay.com 2 For technical questions, contact: [email protected] Document Number: 81146 Rev. 1.0, 29-Apr-11 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VSMY7852X01 High Power Infrared Emitting Diode, Vishay Semiconductors 850 nm, Surface Emitter Technology BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) 0° 10 20° Ie, rel - Relative Radiant Intensity 1 0.1 0.01 40° 1.0 0.9 50° 0.8 60° 70° 0.7 ϕ - Angular Displacement 30° tp = 100 µs IF - Forward Current (A) 10° 80° 0.001 0 0.5 1 1.5 2 2.5 3 0.6 0.4 0.2 0 94 8013 VF - Forward Voltage (V) 21781 Fig. 3 - Forward Current vs. Forward Voltage Fig. 6 - Relative Radiant Intensity vs. Angular Displacement 1000 Ie - Radiant Intensity (mW/sr) tp = 100 µs 100 10 1 0.1 0.001 0.01 0.1 1 10 IF - Forward Current (A) 21782 Fig. 4 - Radiant Intensity vs. Forward Current Φe, rel - Relative Radiant Power 1 0.75 0.5 0.25 0 650 21776 750 850 950 λ- Wavelength (nm) Fig. 5 - Relative Radiant Power vs. Wavelength Document Number: 81146 Rev. 1.0, 29-Apr-11 For technical questions, contact: [email protected] www.vishay.com 3 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VSMY7852X01 Vishay Semiconductors High Power Infrared Emitting Diode, 850 nm, Surface Emitter Technology TAPING DIMENSIONS in millimeters 20846 www.vishay.com 4 For technical questions, contact: [email protected] Document Number: 81146 Rev. 1.0, 29-Apr-11 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VSMY7852X01 High Power Infrared Emitting Diode, Vishay Semiconductors 850 nm, Surface Emitter Technology PACKAGE DIMENISONS in millimeters 20848 Document Number: 81146 Rev. 1.0, 29-Apr-11 For technical questions, contact: [email protected] www.vishay.com 5 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VSMY7852X01 Vishay Semiconductors High Power Infrared Emitting Diode, 850 nm, Surface Emitter Technology SOLDER PROFILE DRYPACK 300 Temperature (°C) max. 260 °C 245 °C 255 °C 240 °C 217 °C 250 FLOOR LIFE 200 max. 30 s Floor life (time between soldering and removing from MBB) must not exceed the time indicated on MBB label: max. 100 s Floor life: 4 weeks 150 max. 120 s 100 Conditions: Tamb < 30 °C, RH < 60 % max. ramp up 3 °C/s max. ramp down 6 °C/s 50 0 50 100 150 200 250 300 Time (s) Fig. 7 - Lead (Pb)-free Reflow Solder Profile acc. J-STD-020 for Preconditioning acc. to JEDEC, Level 2a www.vishay.com 6 Moisture sensitivity level 2a, acc. to J-STD-020B DRYING 0 19841 Devices are packed in moisture barrier bags (MBB) to prevent the products from moisture absorption during transportation and storage. Each bag contains a desiccant. In case of moisture absorption devices should be baked before soldering. Conditions see J-STD-020 or label. Devices taped on reel dry using recommended conditions 192 h at 40 °C (+ 5 °C), RH < 5 %. For technical questions, contact: [email protected] Document Number: 81146 Rev. 1.0, 29-Apr-11 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. 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