VSMB3940X01 Datasheet

VSMB3940X01
www.vishay.com
Vishay Semiconductors
High Speed Infrared Emitting Diode, 940 nm,
GaAlAs Double Hetero
FEATURES
• Package type: surface mount
• Package form: PLCC-2
• Dimensions (L x W x H in mm): 3.5 x 2.8 x 1.75
• Peak wavelength: λp = 940 nm
• High reliability
• High radiant power
• High radiant intensity
• Angle of half intensity: ϕ = ± 60°
948553
• Low forward voltage
• Suitable for high pulse current operation
• High modulation bandwidth: fc = 24 MHz
• Good spectral matching with Si photodetectors
DESCRIPTION
• Floor life: 168 h, MSL 3, acc. J-STD-020
VSMB3940X01 is an infrared, 940 nm emitting diode in
GaAlAs double hetero (DH) technology with high radiant
power and high speed, molded in a PLCC-2 package for
surface mounting (SMD).
• Lead (Pb)-free reflow soldering acc. J-STD-020
• AEC-Q101 qualified
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
APPLICATIONS
• IrDA compatible data transmission
• Miniature light barrier
• Photointerrupters
• Optical switch
• Control and drive circuits
• Shaft encoders
PRODUCT SUMMARY
COMPONENT
Ie (mW/sr)
ϕ (deg)
λp (nm)
tr (ns)
VSMB3940X01
13
± 60
940
15
Note
• Test conditions see table “Basic Characteristics“
ORDERING INFORMATION
ORDERING CODE
PACKAGING
REMARKS
PACKAGE FORM
VSMB3940X01-GS08
Tape and reel
MOQ: 7500 pcs, 1500 pcs/reel
PLCC-2
VSMB3940X01-GS18
Tape and reel
MOQ: 8000 pcs, 8000 pcs/reel
PLCC-2
Note
• MOQ: minimum order quantity
Rev. 1.7, 05-Dec-13
Document Number: 81894
1
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VSMB3940X01
www.vishay.com
Vishay Semiconductors
ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
SYMBOL
VALUE
UNIT
VR
5
V
Reverse voltage
IF
100
mA
Peak forward current
tp/T = 0.5, tp = 100 μs
IFM
200
mA
Surge forward current
tp = 100 μs
IFSM
1.5
A
PV
160
mW
Forward current
Power dissipation
Junction temperature
Operating temperature range
Tj
100
°C
Tamb
-40 to +85
°C
Tstg
-40 to +100
°C
Soldering temperature
t ≤ 5 s, 2 mm from case
Tsd
260
°C
Thermal resistance junction/ambient
J-STD-051, leads 7 mm,
soldered on PCB
RthJA
250
K/W
Storage temperature range
120
160
IF - Forward Current (mA)
PV - Power Dissipation (mW)
180
140
120
100
RthJA = 250 K/W
80
60
40
100
80
60
RthJA = 250 K/W
40
20
20
0
0
0
10
21343
20 30
40
50
60
70 80
90
0
100
Tamb - Ambient Temperature (°C)
10
Fig. 1 - Power Dissipation Limit vs. Ambient Temperature
20 30 40
50 60 70 80
90 100
Tamb - Ambient Temperature (°C)
21344
Fig. 2 - Forward Current Limit vs. Ambient Temperature
BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
Forward voltage
Temperature coefficient of VF
Reverse current
Junction capacitance
Radiant intensity
Radiant power
Temperature coefficient of φe
TEST CONDITION
SYMBOL
MIN.
TYP.
MAX.
IF = 100 mA, tp = 20 ms
VF
1.15
1.35
1.6
IF = 1 A, tp = 100 μs
VF
2.2
V
mV/K
IF = 1 mA
TKVF
-1.8
IF = 100 mA
TKVF
-1.1
VR = 5 V
IR
VR = 0 V, f = 1 MHz, E = 0 mW/cm2
CJ
IF = 100 mA, tp = 20 ms
Ie
13
V
mV/K
10
μA
21
mW/sr
70
7
UNIT
pF
IF = 1 A, tp = 100 μs
Ie
130
IF = 100 mA, tp = 20 ms
φe
40
mW
IF = 1 mA
TKφe
-1.1
%/K
IF = 100 mA
TKφe
-0.51
%/K
ϕ
± 60
deg
nm
Angle of half intensity
mW/sr
Peak wavelength
IF = 30 mA
λp
940
Spectral bandwidth
IF = 30 mA
Δλ
25
nm
Temperature coefficient of λp
IF = 30 mA
TKλp
0.25
nm/K
Rise time
IF = 100 mA, 20 % to 80 %
tr
15
ns
Fall time
IF = 100 mA, 20 % to 80 %
tf
15
ns
IDC = 70 mA, IAC = 30 mA pp
fc
24
MHz
d
0.5
mm
Cut-off frequency
Virtual source diameter
Rev. 1.7, 05-Dec-13
Document Number: 81894
2
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VSMB3940X01
www.vishay.com
Vishay Semiconductors
BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
180
Ie rel - Relative Radiant Intensity (%)
100
10
tp = 100 µs
tp/T= 0.001
1
0
1
2
140
120
IF = 100 mA
100
80
60
tp = 20 ms
40
3
VF - Forward Voltage (V)
21534
IF = 1 mA
160
- 60 - 40 - 20
Fig. 3 - Forward Current vs. Forward Voltage
20
60
80
100
106
104
102
IF = 100 mA
100
IF = 10 mA
98
tp = 20 ms
96
94
IF = 1 mA
92
Φe rel - Relative Radiant Power (%)
100
108
- 40
- 20
0
20
40
60
80
100
Tamb - Ambient Temperature (°C)
21443
90
IF = 30 mA
80
70
60
50
40
30
20
10
0
840
90
880
920
960
1000
1040
λ - Wavelength (nm)
21445
Fig. 4 - Relative Forward Voltage vs. Ambient Temperature
Fig. 7 - Relative Radiant Power vs. Wavelength
0°
1000
10°
20°
30°
Ie, rel - Relative Radiant Intensity
Ie - Radiant Intensity (mW/sr)
40
Fig. 6 - Relative Radiant Intensity vs. Ambient Temperature
110
VF, rel - Relative Forward Voltage (%)
0
Tamb - Ambient Temperature (°C)
21444
100
10
1
tP = 0.1 ms
40°
1.0
0.9
50°
0.8
60°
70°
0.7
ϕ - Angular Displacement
IF - Forward Current (mA)
1000
80°
0.1
1
21420
10
100
1000
IF - Forward Current (mA)
Fig. 5 - Radiant Intensity vs. Forward Current
Rev. 1.7, 05-Dec-13
0.6
0.4
0.2
0
948013-1
Fig. 8 - Relative Radiant Intensity vs. Angular Displacement
Document Number: 81894
3
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VSMB3940X01
www.vishay.com
Vishay Semiconductors
PACKAGE DIMENSIONS in millimeters
0.9
1.75±0.1
3.5±0.2
0.8
Technical drawings
according to DIN
specifications
C
A
2.2
2.8±0.15
Pin identification
Dimensions in mm
Drawing-No.: 6.541-5067.01-4
Issue: 6; 23.09.13
Ø2.4
3
+0.15
Mounting Pad Layout
Area covered
with solderresist
4
2.6 (2.8)
1.2
1.6 (1.9)
4
Dimensions: Reflow and vapor phase (wave soldering)
DRYPACK
SOLDER PROFILE
300
255 °C
240 °C
217 °C
250
Temperature (°C)
max. 260 °C
245 °C
FLOOR LIFE
200
max. 30 s
150
max. 100 s
max. 120 s
100
max. ramp up 3 °C/s max. ramp down 6 °C/s
50
Devices are packed in moisture barrier bags (MBB) to
prevent the products from moisture absorption during
transportation and storage. Each bag contains a desiccant.
Floor life (time between soldering and removing from MBB)
must not exceed the time indicated on MBB label:
Floor life: 168 h
Conditions: Tamb < 30 °C, RH < 60 %
Moisture sensitivity level 3, acc. to J-STD-020
DRYING
0
0
19841
50
100
150
200
250
300
Time (s)
Fig. 9 - Lead (Pb)-free Reflow Solder Profile acc. J-STD-020
Rev. 1.7, 05-Dec-13
In case of moisture absorption devices should be baked
before soldering. Conditions see J-STD-020 or label.
Devices taped on reel dry using recommended conditions
192 h at 40 °C (+ 5 °C), RH < 5 %.
Document Number: 81894
4
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VSMB3940X01
www.vishay.com
Vishay Semiconductors
TAPE AND REEL
PLCC-2 components are packed in antistatic blister tape
(DIN IEC (CO) 564) for automatic component insertion.
Cavities of blister tape are covered with adhesive tape.
10.0
9.0
120°
4.5
3.5
Identification
Label:
Vishay
type
group
tape code
production
code
quantity
Blister tape
Component cavity
14.4 max.
180
178
94 8665
Fig. 13 - Dimensions of Reel-GS08
2.2
2.0
3.5
3.1
3.6
3.4
4.5
3.5
4.0
3.6
13.00
12.75
2.5
1.5
8.3
7.7
Identification
Label:
Vishay
type
group
tape code
production
code
quantity
1.85
1.65
4.1
3.9
10.4
8.4
120°
5.75
5.25
4.1
3.9
63.5
60.5
94 8670
Fig. 10 - Blister Tape
1.6
1.4
13.00
12.75
2.5
1.5
Adhesive tape
0.25
2.05
1.95
94 8668
Fig. 11 - Tape Dimensions in mm for PLCC-2
MISSING DEVICES
62.5
60.0
321
329
14.4 max.
18857
Fig. 14 - Dimensions of Reel-GS18
A maximum of 0.5 % of the total number of components per
reel may be missing, exclusively missing components at the
beginning and at the end of the reel. A maximum of three
consecutive components may be missing, provided this gap
is followed by six consecutive components.
De-reeling direction
94 8158
COVER TAPE REMOVAL FORCE
The removal force lies between 0.1 N and 1.0 N at a removal
speed of 5 mm/s. In order to prevent components from
popping out of the blisters, the cover tape must be pulled off
at an angle of 180° with regard to the feed direction.
> 160 mm
Tape leader
40 empty
compartments
min. 75 empty
compartments
Carrier leader
Carrier trailer
Fig. 12 - Beginning and End of Reel
The tape leader is at least 160 mm and is followed by a
carrier tape leader with at least 40 empty compartements.
The tape leader may include the carrier tape as long as the
cover tape is not connected to the carrier tape. The least
component is followed by a carrier tape trailer with a least
75 empty compartements and sealed with cover tape.
Rev. 1.7, 05-Dec-13
Document Number: 81894
5
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that
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Revision: 02-Oct-12
1
Document Number: 91000