VSMF3710 Vishay Semiconductors High Speed Infrared Emitting Diode, 890 nm RoHS Compliant, Released for Lead (Pb)-free Solder Process Description VSMF3710 is a high speed infrared emitting diode in GaAlAs double hetero (DH) technology in a miniature PLCC-2 SMD package. DH technology combines high speed with high radiant power at wavelength of 890 nm. Features • • • • • • • • • • • • • • 94 8553 High radiant power High speed: tr = 30 ns High modulation band width: fc = 12 MHz e3 Peak wavelength: λp = 890 nm High reliability Low forward voltage Suitable for high pulse current application Wide angle of half intensity Compatible with automatic placement equipment EIA and ICE standard package 8 mm tape and reel standard: GS08 or GS18 Lead (Pb)-free reflow soldering Lead (Pb)-free component Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC Applications • High speed IR data transmission • High power emitter for low space applications • High performance transmissive or reflective sensors Order Instructions Part Ordering code Remarks VSMF3710 VSMF3710-GS08 MOQ: 7500 pcs, 1500 pcs per reel VSMF3710 VSMF3710-GS18 MOQ: 8000 pcs, 8000 pcs per reel Absolute Maximum Ratings Tamb = 25 °C, unless otherwise specified Symbol Value Reverse voltage Parameter Test condition VR 5 Unit V Forward current IF 100 mA mA Peak forward current tp/T = 0.5, tp = 100 µs IFM 200 Surge forward current tp = 100 µs IFSM 1 A Power dissipation PV 170 mW Junction temperature Tj 100 °C Operating temperature range Tamb - 40 to + 85 °C Storage temperature range Tstg - 40 to + 100 °C Tsd 260 °C RthJA 400 K/W Soldering temperature Thermal resistance junction / ambient Document Number 81241 Rev. 1.5, 25-Jan-07 acc. figure 8, J-STD-020B www.vishay.com 1 VSMF3710 Vishay Semiconductors 120 160 I F - Forward Current (mA) Pv - Power Dissipation (mW) 180 R thJA = 400 K/W 140 120 100 80 60 40 100 R thJA = 400 K/W 80 60 40 20 20 0 0 10 20140 20 30 40 50 60 70 80 0 0 90 100 Tamb- Ambient Temperature (°C) Figure 1. Power Dissipation Limit vs. Ambient Temperature 10 20 30 40 50 60 70 80 90 100 Tamb- Ambient Temperature (°C) 20141 Figure 2. Forward Current Limit vs. Ambient Temperature Basic Characteristics Tamb = 25 °C, unless otherwise specified Parameter Test condition Symbol Min Max Unit 1.4 1.6 V IF = 100 mA, tp = 20 ms Temp. coefficient of VF IF = 100 mA Reverse current VR = 5 V IR Junction capacitance VR = 0 V, f = 1 MHz, E = 0 Cj Radiant intensity IF = 100 mA, tp = 20 ms Ie IF = 1 A, tp = 100 µs Ie 100 Radiant power IF = 100 mA, tp = 20 ms φe 40 mW Temp. coefficient of φe IF = 100 mA TKφe - 0.35 %/K ϕ ± 60 deg Peak wavelength IF = 100 mA λp 890 nm Spectral bandwidth IF = 100 mA Δλ 40 nm Temp. coefficient of λp IF = 100 mA TKλp 0.25 nm/K Rise time IF = 100 mA tr 30 ns Fall time IF = 100 mA tf 30 ns ∅ 0.44 mm IF = 1 A, tp = 100 µs Angle of half intensity Virtual source size www.vishay.com 2 VF Typ. Forward voltage VF 2.3 V TKVF - 2.1 mV/K 10 µA 22 mW/sr 125 6 10 pF mW/sr Document Number 81241 Rev. 1.5, 25-Jan-07 VSMF3710 Vishay Semiconductors Typical Characteristics Tamb = 25 °C, unless otherwise specified 10000 1.25 I F - Forward Current (mA) Φe, rel - Relative Radiant Power Tamb < 60 °C t p /T = 0.005 0.01 1000 0.02 0.05 100 0.2 0.5 DC 10 0.1 1 0.01 0.1 1 0.75 0.5 0.25 0 800 100 10 t p - Pulse Length (ms) 95 9985 1.0 Figure 3. Pulse Forward Current vs. Pulse Duration Figure 6. Relative Radiant Power vs. Wavelength 0° 1000 10° 20° 30° I e rel - Relative Radiant Intensity I F - Forward Current (mA) 1000 900 λ - Wavelength (nm) 20082 100 t p = 100 µs t p / T = 0.001 10 40° 1.0 0.9 50° 0.8 60° 70° 0.7 80° 1 0 1 2 3 4 0.6 0.4 0.2 0 0.2 0.4 0.6 94 8013 VF - Forward Voltage (V) 18873_1 Figure 4. Forward Current vs. Forward Voltage Figure 7. Relative Radiant Intensity vs. Angular Displacement I e - Radiant Intensity (mW/sr) 100 10 t p = 100 µs 1 0.1 1 18874 10 100 1000 I F - Forward Pulse Current (mA) Figure 5. Radiant Intensity vs. Forward Pulse Current Document Number 81241 Rev. 1.5, 25-Jan-07 www.vishay.com 3 VSMF3710 Vishay Semiconductors Package Dimensions Mounting Pad Layout 1.2 4 2.6 (2.8) area covered with solder resist 4 1.6 (1.9) 20541_1 www.vishay.com 4 Document Number 81241 Rev. 1.5, 25-Jan-07 VSMF3710 Vishay Semiconductors Solder Profile Tape and Reel 300 Temperature (°C) max. 260 °C 245 °C 255 255°C°C 240 °C 217 °C 250 PLCC-2 components are packed in antistatic blister tape (DIN IEC (CO) 564) for automatic component insertion. Cavities of blister tape are covered with adhesive tape. 200 max. 30 s 150 max. 100 s max. 120 s Adhesive Tape 100 max. Ramp Down 6 °C/s max. Ramp Up 3 °C/s 50 0 0 50 100 150 250 200 Blister Tape 300 Time (s) 19841 Figure 8. Lead (Pb)-free Reflow Solder Profile acc. J-STD-020B for Preconditioning acc. to JEDEC, Level 2a TTW Soldering 300 948626-1 (acc. to CECC00802) 5s Component Cavity Lead Temperature Figure 10. Blister Tape Temperature (°C) 250 200 second wave 235 °C...260 °C first wave 94 8670 full line: typical dotted line: process limits ca. 2 K/s ca. 200 K/s 150 100 °C...130 °C 100 2.2 2.0 3.5 3.1 ca. 5 K/s 2 K/s 50 forced cooling 0 0 50 100 150 200 5.75 5.25 250 4.0 3.6 Time (s) 3.6 3.4 Figure 9. Double Wave Solder Profile for Opto Components Drypack Devices are packed in moisture barrier bags (MBB) to prevent the products from moisture absorption during transportation and storage. Each bag contains a desiccant. Floor Life 8.3 7.7 1.85 1.65 1.6 1.4 4.1 3.9 4.1 3.9 0.25 2.05 1.95 94 8668 Figure 11. Tape Dimensions in mm for PLCC-2 Floor life (time between soldering and removing from MBB) must not exceed the time indicated on MBB label: Floor Life: 4 weeks Conditions: Tamb < 30 °C, RH < 60 % Moisture Sensitivity Level 2a, acc. to J-STD-020B. Drying In case of moisture absorption devices should be baked before soldering. Conditions see J-STD-020 or Label. Devices taped on reel dry using recommended conditions 192 h at 40 °C (+ 5 °C), RH < 5 %. Document Number 81241 Rev. 1.5, 25-Jan-07 www.vishay.com 5 VSMF3710 Vishay Semiconductors Missing Devices A maximum of 0.5 % of the total number of components per reel may be missing, exclusively missing components at the beginning and at the end of the reel. A maximum of three consecutive components may be missing, provided this gap is followed by six consecutive components. 10.4 8.4 120° 4.5 3.5 13.00 12.75 2.5 1.5 62.5 60.0 Identification De-reeling direction 94 8158 Label: Vishay Type Group Tape Code Production Code Quantity 14.4 max. 321 329 18857 Figure 14. Dimensions of Reel-GS18 > 160 mm Tape leader Cover Tape Removal Force 40 empty compartments min. 75 empty compartments Carrier leader Carrier trailer Figure 12. Beginning and End of Reel The removal force lies between 0.1 N and 1.0 N at a removal speed of 5 mm/s. In order to prevent components from popping out of the bliesters, the cover tape must be pulled off at an angle of 180° with regard to the feed direction. The tape leader is at least 160 mm and is followed by a carrier tape leader with at least 40 empty compartements. The tape leader may include the carrier tape as long as the cover tape is not connected to the carrier tape. The least component is followed by a carrier tape trailer with a least 75 empty compartements and sealed with cover tape. 10.0 9.0 120° 4.5 3.5 2.5 1.5 13.00 12.75 63.5 60.5 Identification Label: Vishay Type Group Tape Code Production Code Quantity 180 178 14.4 max. 94 8665 Figure 13. Dimensions of Reel-GS08 www.vishay.com 6 Document Number 81241 Rev. 1.5, 25-Jan-07 VSMF3710 Vishay Semiconductors Ozone Depleting Substances Policy Statement It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs). The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency (EPA) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay Semiconductors products for any unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Document Number 81241 Rev. 1.5, 25-Jan-07 www.vishay.com 7 Legal Disclaimer Notice Vishay Notice Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc., or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Vishay for any damages resulting from such improper use or sale. Document Number: 91000 Revision: 08-Apr-05 www.vishay.com 1