VSMF9700X01 Vishay Semiconductors High Speed Infrared Emitting Diode, 890 nm FEATURES • Package type: surface mount • Package form: PLCC-2 • Dimensions (L x W x H in mm): 3.5 x 2.8 x 1.75 • Peak wavelength: λp = 890 nm • High reliability • High radiant power • High radiant intensity • Angle of half sensitivity: ϕ = ± 60° 94 8553 • Low forward voltage • Suitable for high pulse current operation • Floor life: 168 h, MSL 3, acc. J-STD-020 DESCRIPTION • Lead (Pb)-free reflow soldering VSMF9700X01 is a high speed infrared emitting diode in GaAlAs double hetero (DH) technology in a miniature PLCC-2 package. VSMF9700X01 is dedicated to emitter operation and detector operation. • AEC-Q101 qualified • Compliant to RoHS directive 2002/95/EC and in accordance to WEEE 2002/96/EC • Find out more about Vishay’s Automotive Grade Product requirements at: www.vishay.com/applications APPLICATIONS • Automotive sensors • Rain sensor • Infrared high speed remote control and free air data transmission systems PRODUCT SUMMARY COMPONENT Ie (mW/sr) ϕ (deg) λp (nm) tr (ns) 8 ± 60 890 50 VSMF9700 Note Test condition see table “Basic Characteristics” ORDERING INFORMATION ORDERING CODE PACKAGING REMARKS PACKAGE FORM VSMF9700-GS08 Tape and reel MOQ: 7500 pcs, 1500 pcs/reel PLCC-2 VSMF9700-GS18 Tape and reel MOQ: 8000 pcs, 8000 pcs/reel PLCC-2 Note MOQ: minimum order quantity ** Please see document “Vishay Material Category Policy”: www.vishay.com/doc?99902 Document Number: 81475 Rev. 1.5, 03-Nov-09 For technical questions, contact: [email protected] www.vishay.com 1 VSMF9700X01 Vishay Semiconductors High Speed Infrared Emitting Diode, 890 nm ABSOLUTE MAXIMUM RATINGS PARAMETER TEST CONDITION SYMBOL VALUE UNIT Reverse voltage VR 5 V Forward current IF 100 mA IFSM 200 mA PV 170 mW °C Surge forward current tp = 100 μs Power dissipation Junction temperature Tj 110 Operating temperature range Tamb - 40 to + 95 °C Storage temperature range Tstg - 40 to + 100 °C Tsd 260 °C RthJA 400 K/W Soldering temperature Acc. figure 8, J-STD-020 Thermal resistance junction/ambient Note Tamb = 25 °C, unless otherwise specified 120 160 R thJA = 400 K/W 140 IF - Forward Current (mA) PV - Power Dissipation (mW) 180 120 100 80 60 40 100 R thJA = 400 K/W 80 60 40 20 20 0 0 0 0 10 21592 20 30 40 50 60 70 80 90 100 Tamb - Ambient Temperature (°C) 21593 Fig. 1 - Power Dissipation Limit vs. Ambient Temperature 10 20 30 40 50 60 70 80 90 100 Tamb - Ambient Temperature (°C) Fig. 2 - Forward Current Limit vs. Ambient Temperature BASIC CHARACTERISTICS PARAMETER Forward voltage Temperature coefficient of VF Reverse current TEST CONDITION SYMBOL IF = 100 mA, tp = 20 ms VF MIN. TYP. MAX. UNIT 1.6 1.8 V 2.1 IF = 200 mA, tp = 100 μs VF 1.8 IF = 100 mA TKVF - 2.1 V mV/K VR = 5 V IR VR = 0 V, f = 1 MHz, E = 0 Cj Radiant intensity IF = 100 mA, tp = 20 ms Ie Radiant power IF = 100 mA, tp = 20 ms φe 40 mW IF = 100 mA TKφe - 0.35 %/K ϕ ± 60 deg Junction capacitance Temperature coefficient of φe Angle of half intensity 10 5 μA 160 pF 8 mW/sr Peak wavelength IF = 100 mA λp 890 nm Spectral bandwidth IF = 100 mA Δλ½ 50 nm Temperature coefficient of λp IF = 100 mA TKλp 0.25 nm/K Rise time IF = 100 mA tr 50 ns Fall time IF = 100 mA tf 50 ns Note Tamb = 25 °C, unless otherwise specified www.vishay.com 2 For technical questions, contact: [email protected] Document Number: 81475 Rev. 1.5, 03-Nov-09 VSMF9700X01 High Speed Infrared Emitting Diode, Vishay Semiconductors 890 nm BASIC CHARACTERISTICS Tamb = 25 °C, unless otherwise specified - Radiant Power (mW) 1000 10 3 10 2 10 1 100 10 1 e IF - Forward Current (mA) 10 4 10 0 0.1 0 1 4 3 V F - Forward Voltage (V) 96 12169 VF rel - Relative Forward Voltage (V) 2 10 0 10 4 Fig. 3 - Forward Current vs. Forward Voltage Fig. 6 - Radiant Power vs. Forward Current 1.2 1.6 1.4 1.1 1.2 c rel IF = 10 mA 1.0 0.8 I c rel / 1.0 0.9 0.6 0.4 0.8 0.2 0.7 0.0 0 20 40 60 80 100 0 Tamb - Ambient Temperature (°C) 94 7990 40 60 80 100 120 140 Fig. 7 - Relative Radiant Intensity/Power vs. Ambient Temperature 1.25 Φe rel - Relative Radiant Power 1000 100 10 1 1.0 0.75 0.5 0.25 0 800 0.1 10 0 16693 20 Tamb - Ambient Temperature (°C) 16695 Fig. 4 - Relative Forward Voltage vs. Ambient Temperature I e - Radiant Intensity (mW/sr) 10 1 10 2 10 3 I F - Forward Current (mA) 16694 10 1 10 2 10 3 I F - Forward Current (mA) 10 4 Fig. 5 - Radiant Intensity vs. Forward Current Document Number: 81475 Rev. 1.5, 03-Nov-09 20082 900 1000 λ - Wavelength (nm) Fig. 8 - Relative Radiant Power vs. Wavelength For technical questions, contact: [email protected] www.vishay.com 3 VSMF9700X01 Vishay Semiconductors High Speed Infrared Emitting Diode, 890 nm 0° 10° 20° 1 0.75 0.5 0.25 40° 1.0 0.9 50° 0.8 60° 70° 0.7 ϕ - Angular Displacement 30° Ie, rel - Relative Radiant Intensity S( λ ) rel - Relative Spectral Sensitivity 1.25 80° 0 0.6 800 820 840 860 880 900 920 940 960 980 1000 0.4 0.2 0 94 8013 λ - Wavelength (nm) 20420 Fig. 9 - Relative Spectral Sensitivity vs. Wavelength Fig. 10 - Relative Radiant Intensity vs. Angular Displacement PACKAGE DIMENSIONS in millimeters technical drawings according to DIN specifications 0.9 1.75 ± 0.1 3.5 ± 0.2 Mounting Pad Layout Pin identification 4 C area covered with solder resist 2.6 (2.8) A 2.2 2.8 ± 0.15 1.2 4 Ø 2.4 1.6 (1.9) 3 + 0.15 Drawing-No.: 6.541-5067.02-4 Issue: 2; 30.07.07 20767 REFLOW SOLDER PROFILE DRYPACK 300 Temperature (°C) max. 260 °C 245 °C 255 °C 240 °C 217 °C 250 FLOOR LIFE 200 Floor life (time between soldering and removing from MBB) must not exceed the time indicated on MBB label: Floor life: 168 h Conditions: Tamb < 30 °C, RH < 60 % Moisture sensitivity level 3, acc. to J-STD-020. max. 30 s 150 max. 100 s max. 120 s 100 max. ramp up 3 °C/s max. ramp down 6 °C/s 50 0 0 19841 50 100 150 200 250 300 Time (s) Fig. 11 - Lead (Pb)-free Reflow Solder Profile acc. J-STD-020 www.vishay.com 4 Devices are packed in moisture barrier bags (MBB) to prevent the products from moisture absorption during transportation and storage. Each bag contains a desiccant. DRYING In case of moisture absorption devices should be baked before soldering. Conditions see J-STD-020 or label. Devices taped on reel dry using recommended conditions 192 h at 40 °C (+ 5 °C), RH < 5 %. For technical questions, contact: [email protected] Document Number: 81475 Rev. 1.5, 03-Nov-09 VSMF9700X01 High Speed Infrared Emitting Diode, Vishay Semiconductors 890 nm TAPE AND REEL PLCC-2 components are packed in antistatic blister tape (DIN IEC (CO) 564) for automatic component insertion. Cavities of blister tape are covered with adhesive tape. 10.0 9.0 120° 4.5 3.5 Identification Label: Vishay type group tape code production code quantity Blister tape Component cavity 3.5 3.1 14.4 max. 180 178 94 8665 Fig. 15 - Dimensions of Reel-GS08 2.2 2.0 3.6 3.4 4.5 3.5 4.0 3.6 13.00 12.75 2.5 1.5 8.3 7.7 1.85 1.65 4.1 3.9 10.4 8.4 120° 5.75 5.25 4.1 3.9 63.5 60.5 94 8670 Fig. 12 - Blister Tape 1.6 1.4 13.00 12.75 2.5 1.5 Adhesive tape Identification Label: Vishay type group tape code production code quantity 0.25 2.05 1.95 94 8668 Fig. 13 - Tape Dimensions in mm for PLCC-2 MISSING DEVICES A maximum of 0.5 % of the total number of components per reel may be missing, exclusively missing components at the beginning and at the end of the reel. A maximum of three consecutive components may be missing, provided this gap is followed by six consecutive components. De-reeling direction 62.5 60.0 321 329 14.4 max. 18857 Fig. 16 - Dimensions of Reel-GS18 COVER TAPE REMOVAL FORCE The removal force lies between 0.1 N and 1.0 N at a removal speed of 5 mm/s. In order to prevent components from popping out of the blisters, the cover tape must be pulled off at an angle of 180° with regard to the feed direction. 94 8158 > 160 mm Tape leader 40 empty compartments min. 75 empty compartments Carrier leader Carrier trailer Fig. 14 - Beginning and End of Reel The tape leader is at least 160 mm and is followed by a carrier tape leader with at least 40 empty compartements. The tape leader may include the carrier tape as long as the cover tape is not connected to the carrier tape. The least component is followed by a carrier tape trailer with a least 75 empty compartements and sealed with cover tape. Document Number: 81475 Rev. 1.5, 03-Nov-09 For technical questions, contact: [email protected] www.vishay.com 5 Legal Disclaimer Notice Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. 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