VSMB2000X01, VSMB2020X01 Datasheet

VSMB2000X01, VSMB2020X01
www.vishay.com
Vishay Semiconductors
High Speed Infrared Emitting Diodes, 940 nm, GaAlAs, DH
VSMB2000X01
FEATURES
VSMB2020X01
• Package type: surface mount
• Package form: GW, RGW
• Dimensions (L x W x H in mm): 2.3 x 2.3 x 2.8
• AEC-Q101 qualified
• Peak wavelength: p = 940 nm
21725-4
• High reliability
• High radiant power
DESCRIPTION
• High radiant intensity
VSMB2000X01 series are infrared, 940 nm emitting diodes
in GaAlAs (DH) technology with high radiant power and high
speed, molded in clear, untinted plastic packages (with lens)
for surface mounting (SMD).
• Angle of half intensity:  = ± 12°
• Low forward voltage
• Suitable for high pulse current operation
• Terminal configurations: gullwing or reserve gullwing
APPLICATIONS
• Package matches with detector VEMD2000X01 series
• IrDA compatible data transmission
• Floor life: 4 weeks, MSL 2a, acc. J-STD-020
• Miniature light barrier
• Compliant to RoHS Directive 2002/95/EC and in
accordance to WEEE 2002/96/EC
• Photointerrupters
• Optical switch
Note
** Please see document “Vishay Material Category Policy”:
www.vishay.com/doc?99902
• Control and drive circuits
• Shaft encoders
PRODUCT SUMMARY
COMPONENT
Ie (mW/sr)
 (deg)
P (nm)
tr (ns)
VSMB2000X01
40
± 12
940
15
VSMB2020X01
40
± 12
940
15
Note
• Test conditions see table “Basic Characteristics“
ORDERING INFORMATION
ORDERING CODE
PACKAGING
REMARKS
PACKAGE FORM
VSMB2000X01
Tape and reel
MOQ: 6000 pcs, 6000 pcs/reel
Reverse gullwing
VSMB2020X01
Tape and reel
MOQ: 6000 pcs, 6000 pcs/reel
Gullwing
Note
• MOQ: minimum order quantity
ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)
SYMBOL
VALUE
Reverse voltage
PARAMETER
TEST CONDITION
VR
5
UNIT
V
Forward current
IF
100
mA
Peak forward current
tp/T = 0.5, tp  100 μs
IFM
200
mA
Surge forward current
tp = 100 μs
IFSM
1
A
Power dissipation
PV
160
mW
Junction temperature
Tj
100
°C
Operating temperature range
Tamb
- 40 to + 85
°C
Storage temperature range
Tstg
- 40 to + 100
°C
t5s
Tsd
260
°C
J-STD-051, leads 7 mm,
soldered on PCB
RthJA
250
K/W
Soldering temperature
Thermal resistance junction/ambient
Rev. 1.5, 23-Aug-11
Document Number: 81930
1
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VSMB2000X01, VSMB2020X01
www.vishay.com
Vishay Semiconductors
120
160
IF - Forward Current (mA)
PV - Power Dissipation (mW)
180
140
120
100
RthJA = 250 K/W
80
60
40
100
80
60
RthJA = 250 K/W
40
20
20
0
0
0
10
21343
20 30
40
50
60
70 80
90
0
100
10
Fig. 1 - Power Dissipation Limit vs. Ambient Temperature
50 60 70 80
90 100
Tamb - Ambient Temperature (°C)
21344
Tamb - Ambient Temperature (°C)
20 30 40
Fig. 2 - Forward Current Limit vs. Ambient Temperature
BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
Forward voltage
Temperature coefficient of VF
Reverse current
Junction capacitance
Radiant intensity
Radiant power
Temperature coefficient of radiant
power
TEST CONDITION
SYMBOL
MIN.
TYP.
MAX.
IF = 100 mA, tp = 20 ms
VF
1.15
1.35
1.6
IF = 1 A, tp = 100 μs
VF
2.2
V
IF = 1 mA
TKVF
- 1.8
mV/K
IF = 100 mA
TKVF
- 1.1
mV/K
VR = 5 V
IR
VR = 0 V, f = 1 MHz, E = 0 mW/cm2
CJ
IF = 100 mA, tp = 20 ms
Ie
40
V
10
μA
60
mW/sr
70
20
UNIT
pF
IF = 1 A, tp = 100 μs
Ie
330
IF = 100 mA, tp = 20 ms
e
40
mW
IF = 1 mA
TKe
- 1.1
%/K
IF = 100 mA
TKe
- 0.51
%/K

± 12
deg
Angle of half intensity
mW/sr
Peak wavelength
IF = 30 mA
p
Spectral bandwidth
IF = 30 mA

25
nm
Temperature coefficient of p
IF = 30 mA
TKp
0.25
nm/K
Rise time
IF = 100 mA, 20 % to 80 %
tr
15
ns
Fall time
IF = 100 mA, 20 % to 80 %
tf
15
ns
IDC = 70 mA, IAC = 30 mA pp
fc
23
MHz
d
1.5
mm
Cut-off frequency
Virtual source diameter
Rev. 1.5, 23-Aug-11
920
940
960
nm
Document Number: 81930
2
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VSMB2000X01, VSMB2020X01
www.vishay.com
Vishay Semiconductors
BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
180
Ie rel - Relative Radiant Intensity (%)
100
10
tp = 100 µs
tp/T= 0.001
IF = 1 mA
160
140
120
IF = 100 mA
100
80
60
tp = 20 ms
1
40
0
1
2
3
VF - Forward Voltage (V)
21534
- 60 - 40 - 20
Fig. 3 - Forward Current vs. Forward Voltage
20
60
80
100
106
104
102
IF = 100 mA
100
IF = 10 mA
98
tp = 20 ms
96
94
IF = 1 mA
92
Φe rel - Relative Radiant Power (%)
100
108
90
- 40
- 20
0
20
40
60
80
70
60
50
40
30
20
10
0
840
100
Tamb - Ambient Temperature (°C)
21443
IF = 30 mA
80
90
880
920
960
1000
1040
λ - Wavelength (nm)
21445
Fig. 7 - Relative Radiant Power vs. Wavelength
Fig. 4 - Relative Forward Voltage vs. Ambient Temperature
0°
1000
10°
20°
30°
tp = 100 µs
tp/T= 0.001
Ie rel - Relative Radiant Intensity
Ie - Radiant Intensity (mW/sr)
40
Fig. 6 - Relative Radiant Intensity vs. Ambient Temperature
110
VF, rel - Relative Forward Voltage (%)
0
Tamb - Ambient Temperature (°C)
21444
100
10
1
40°
1.0
50°
0.9
60°
0.8
70°
ϕ - Angular Displacement
IF - Forward Current (mA)
1000
80°
0.7
0.1
1
10
100
1000
IF - Forward Current (mA)
Fig. 5 - Radiant Intensity vs. Forward Current
Rev. 1.5, 23-Aug-11
0.6
0.4
0.2
0
21550
Fig. 8 - Relative Radiant Intensity vs. Angular Displacement
Document Number: 81930
3
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VSMB2000X01, VSMB2020X01
www.vishay.com
Vishay Semiconductors
SOLDER PROFILE
DRYPACK
Devices are packed in moisture barrier bags (MBB) to
prevent the products from moisture absorption during
transportation and storage. Each bag contains a desiccant.
300
Temperature (°C)
max. 260 °C
245 °C
255 °C
240 °C
217 °C
250
FLOOR LIFE
200
Floor life (time between soldering and removing from MBB)
must not exceed the time indicated on MBB label:
Floor life: 4 weeks
Conditions: Tamb < 30 °C, RH < 60 %
Moisture sensitivity level 2a, acc. to J-STD-020.
max. 30 s
150
max. 100 s
max. 120 s
100
max. ramp up 3 °C/s max. ramp down 6 °C/s
50
DRYING
In case of moisture absorption devices should be baked
before soldering. Conditions see J-STD-020 or label.
Devices taped on reel dry using recommended conditions
192 h at 40 °C (+ 5 °C), RH < 5 %.
0
0
50
100
19841
150
200
250
300
Time (s)
Fig. 9 - Lead (Pb)-free Reflow Solder Profile acc. J-STD-020
PACKAGE DIMENSIONS in millimeters: VSMB2000
0.3
Ø 1.8 ± 0.1
Z
1.6
0.19
2.77 ± 0.2
0.05 ± 0.1
0.4
2.2
2.2
5.8 ± 0.2
Z 20:1
1.1 ± 0.1
0.4
0.5
2.3 ± 0.2
0.254
exposed copper
2.3 ± 0.2
Cathode
Pin ID
1.7
Anode
0.75
Solder pad proposal
acc. IPC 7351
technical drawings
according to DIN
specifications
Not indicated tolerances ± 0.1
Ø 2.3 ± 0.1
6.7
Drawing-No.: 6.544-5391.02-4
Issue: 2; 18.03.10
21517
Rev. 1.5, 23-Aug-11
Document Number: 81930
4
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VSMB2000X01, VSMB2020X01
www.vishay.com
Vishay Semiconductors
PACKAGE DIMENSIONS in millimeters: VSMB2020
Ø 1.8
2.77 ± 0.2
0.3
0.4
0.19
0.05
1.6
X
2.2
2.2
4.2 ± 0.2
X 20:1
exposed copper
0.6
Cathode
0.254
2.3 ± 0.2
0.4
0.5
2.3 ± 0.2
Anode
Pin ID
technical drawings
according to DIN
specifications
0.75
Solder pad proposal
acc. IPC 7351
Not indicated tolerances ± 0.1
2.45
5.15
Drawing-No.: 6.544-5383.02-4
Issue: 4; 18.03.10
21488
Rev. 1.5, 23-Aug-11
Document Number: 81930
5
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VSMB2000X01, VSMB2020X01
www.vishay.com
Vishay Semiconductors
TAPING AND REEL DIMENSIONS in millimeters: VSMB2000
Unreel direction
X
2.
Ø 62 ± 0.5
Reel
0
5±
Ø
13
±
0.5
Ø 330 ± 1
.5
Tape position
coming out from reel
6000 pcs/reel
Label posted here
Technical drawings
according to DIN
specifications
12.4 ± 1.5
Leader and trailer tape:
Empty (160 mm min.)
Parts mounted
Direction of pulling out
Devicce
Lead I
Lead II
Collector
Emitter
Cathode
Anode
Anode
Cathode
Ø 1.55 ± 0.05
I
VEMT2000
VEMT2500
X 2:1
4 ± 0.1
2 ± 0.05
VEMD2000
5.5 ± 0.05
VEMD2500
VSMB2000
VSMG2000
VSMY2850RG
3.05 ± 0.1
II
12 ± 0.3
Terminal position in tape
1.75 ± 0.1
Empty (400 mm min.)
4 ± 0.1
Drawing-No.: 9.800-5100.01-4
Issue: 2; 18.03.10
21572
Rev. 1.5, 23-Aug-11
Document Number: 81930
6
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VSMB2000X01, VSMB2020X01
www.vishay.com
Vishay Semiconductors
TAPING AND REEL DIMENSIONS in millimeters: VSMB2020
Reel
X
Unreel direction
5±
Ø 62 ± 0.5
2.
Ø
13
±
0.5
Ø 330 ± 1
0.5
Tape position
coming out from reel
6000 pcs/reel
Label posted here
technical drawings
according to DIN
specifications
12.4 ± 1.5
Leader and trailer tape:
Empty (160 mm min.)
Parts mounted
Direction of pulling out
Ø 1.55 ± 0.05
Devicce
Lead I
Lead II
Collector
Emitter
Cathode
Anode
Anode
Cathode
I
VEMT2020
VEMT2520
X 2:1
4 ± 0.1
2 ± 0.05
VSMB2020
VEMD2020
VEMD2520
VSMY2850G
3.05 ± 0.1
II
4 ± 0.1
5.5 ± 0.05
VSMG2020
12 ± 0.3
Terminal position in tape
1.75 ± 0.1
Empty (400 mm min.)
Drawing-No.: 9.800-5091.01-4
Issue: 3; 18.03.10
21571
Rev. 1.5, 23-Aug-11
Document Number: 81930
7
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council
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Revision: 02-Oct-12
1
Document Number: 91000