VSMG2000X01, VSMG2020X01 www.vishay.com Vishay Semiconductors High Speed Infrared Emitting Diodes, 850 nm, GaAlAs, DH FEATURES VSMG2000X01 • Package type: surface mount VSMG2020X01 • Package form: GW, RGW • Dimensions (L x W x H in mm): 2.3 x 2.3 x 2.8 • AEC-Q101 qualified • Peak wavelength: p = 850 nm • High reliability • High radiant power • High radiant intensity • Angle of half intensity: = ± 12° • Low forward voltage 21725-2 • Suitable for high pulse current operation • Terminal configurations: gullwing or reserve gullwing DESCRIPTION • Package matches with detector VEMD2000X01 series VSMG2000X01 series are infrared, 850 nm emitting diodes in GaAlAs (DH) technology with high radiant power and high speed, molded in clear, untinted plastic packages (with lens) for surface mounting (SMD). • Floor life: 4 weeks, MSL 2a, acc. J-STD-020 • Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 APPLICATIONS • IrDA compatible data transmission • IR-illumination (CCTV) • Miniature light barrier • Photointerrupters • Optical switch • Shaft encoders • IR emitter source for proximity applications PRODUCT SUMMARY COMPONENT Ie (mW/sr) (deg) p (nm) tr (ns) VSMG2000X01 40 ± 12 850 20 VSMG2020X01 40 ± 12 850 20 Note • Test conditions see table “Basic Characteristics“ ORDERING INFORMATION ORDERING CODE PACKAGING REMARKS PACKAGE FORM VSMG2000X01 Tape and reel MOQ: 6000 pcs, 6000 pcs/reel Reverse gullwing VSMG2020X01 Tape and reel MOQ: 6000 pcs, 6000 pcs/reel Gullwing Note • MOQ: minimum order quantity Rev. 1.2, 23-Jan-13 Document Number: 85194 1 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VSMG2000X01, VSMG2020X01 www.vishay.com Vishay Semiconductors ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified) PARAMETER TEST CONDITION SYMBOL VALUE UNIT VR 5 V Reverse voltage Forward current IF 100 mA Peak forward current tp/T = 0.5, tp 100 μs IFM 200 mA Surge forward current tp = 100 μs IFSM 1 A PV 170 mW Power dissipation Junction temperature Tj 100 °C Operating temperature range Tamb - 40 to + 85 °C Storage temperature range Tstg - 40 to + 100 °C Soldering temperature Acc. figure 9, J-STD-020 Tsd 260 °C Thermal resistance junction/ambient J-STD-051, leads 7 mm, soldered on PCB RthJA 250 K/W 120 160 IF - Forward Current (mA) PV - Power Dissipation (mW) 180 140 120 100 RthJA = 250 K/W 80 60 40 100 80 60 RthJA = 250 K/W 40 20 20 0 0 0 10 21341 20 30 40 50 60 70 80 90 100 0 Tamb - Ambient Temperature (°C) 10 Fig. 1 - Power Dissipation Limit vs. Ambient Temperature 20 30 40 50 60 70 80 90 100 Tamb - Ambient Temperature (°C) 21342 Fig. 2 - Forward Current Limit vs. Ambient Temperature BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) PARAMETER Forward voltage Temperature coefficient of VF Reverse current Junction capacitance Radiant intensity TEST CONDITION SYMBOL MIN. TYP. MAX. IF = 100 mA, tp = 20 ms VF 1.25 1.45 1.7 IF = 1 A, tp = 100 μs VF 2.3 V mV/K IF = 1 mA TKVF - 1.8 IF = 100 mA TKVF - 1.1 VR = 5 V IR VR = 0 V, f = 1 MHz, E = 0 mW/cm2 IF = 100 mA, tp = 20 ms CJ Ie 40 V mV/K 10 μA 60 mW/sr 125 20 UNIT pF IF = 1 A, tp = 100 μs Ie 350 IF = 100 mA, tp = 20 ms e 40 mW IF = 100 mA TKe - 0.35 %/K Peak wavelength IF = 30 mA p Spectral bandwidth IF = 30 mA 35 nm Radiant power Temperature coefficient of e Angle of half intensity Temperature coefficient of p mW/sr ± 12 830 850 deg 870 nm IF = 30 mA TKp 0.25 nm/K Rise time IF = 100 mA, 20 % to 80 % tr 20 ns Fall time IF = 100 mA, 20 % to 80 % tf 20 ns IDC = 70 mA, IAC = 30 mA pp fc 23 MHz d 1.5 mm Cut-off frequency Virtual source diameter Rev. 1.2, 23-Jan-13 Document Number: 85194 2 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VSMG2000X01, VSMG2020X01 www.vishay.com Vishay Semiconductors BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) 1.25 Φe, rel - Relative Radiant Power 100 tp = 100 µs tp/T = 0.001 10 1.0 0.75 0.5 0.25 1 0 0 1 2 3 VF - Forward Voltage (V) 18873_1 850 900 λ- Wavelength (nm) 16972 Fig. 3 - Forward Current vs. Forward Voltage Fig. 6 - Relative Radiant Power vs. Wavelength 110 0° 10° 20° 30° 108 Ie rel - Relative Radiant Intensity VF, rel - Relative Forward Voltage (%) 800 4 106 104 102 IF = 100 mA 100 IF = 10 mA 98 tp = 20 ms 96 94 IF = 1 mA 92 40° 1.0 50° 0.9 60° 0.8 70° 80° 0.7 90 - 40 - 20 0 20 40 60 80 100 0.6 Tamb - Ambient Temperature (°C) 21443 ϕ - Angular Displacement IF - Forward Current (mA) 1000 0.4 0.2 0 21550 Fig. 4 - Relative Forward Voltage vs. Ambient Temperature Fig. 7 - Relative Radiant Intensity vs. Angular Displacement Ie - Radiant Intensity (mW/sr) 1000 tp = 100 µs 100 10 1 1 0.001 0.01 0.1 1 IF - Forward Current (A) Fig. 5 - Radiant Intensity vs. Forward Current Rev. 1.2, 23-Jan-13 Document Number: 85194 3 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VSMG2000X01, VSMG2020X01 www.vishay.com Vishay Semiconductors SOLDER PROFILE DRYPACK Devices are packed in moisture barrier bags (MBB) to prevent the products from moisture absorption during transportation and storage. Each bag contains a desiccant. 300 Temperature (°C) max. 260 °C 245 °C 255 °C 240 °C 217 °C 250 FLOOR LIFE 200 max. 30 s Floor life (time between soldering and removing from MBB) must not exceed the time indicated on MBB label: 150 max. 100 s max. 120 s Floor life: 4 weeks 100 Conditions: Tamb < 30 °C, RH < 60 % Moisture sensitivity level 2a, acc. to J-STD-020. max. ramp up 3 °C/s max. ramp down 6 °C/s 50 0 0 50 100 19841 150 200 250 DRYING 300 In case of moisture absorption devices should be baked before soldering. Conditions see J-STD-020 or label. Devices taped on reel dry using recommended conditions 192 h at 40 °C (+ 5 °C), RH < 5 %. Time (s) Fig. 8 - Lead (Pb)-free Reflow Solder Profile acc. J-STD-020 PACKAGE DIMENSIONS in millimeters: VSMG2000 0.3 Ø 1.8 ± 0.1 Z 1.6 0.19 2.77 ± 0.2 0.05 ± 0.1 0.4 2.2 2.2 5.8 ± 0.2 Z 20:1 1.1 ± 0.1 0.4 0.5 2.3 ± 0.2 0.254 exposed copper 2.3 ± 0.2 Cathode Pin ID 1.7 Anode 0.75 Solder pad proposal acc. IPC 7351 technical drawings according to DIN specifications Not indicated tolerances ± 0.1 Ø 2.3 ± 0.1 6.7 Drawing-No.: 6.544-5391.02-4 Issue: 2; 18.03.10 21517 Rev. 1.2, 23-Jan-13 Document Number: 85194 4 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VSMG2000X01, VSMG2020X01 www.vishay.com Vishay Semiconductors PACKAGE DIMENSIONS in millimeters: VSMG2020 Ø 1.8 2.77 ± 0.2 0.3 0.4 0.19 0.05 1.6 X 2.2 2.2 4.2 ± 0.2 X 20:1 exposed copper 0.6 Cathode 0.254 2.3 ± 0.2 0.4 0.5 2.3 ± 0.2 Anode Pin ID technical drawings according to DIN specifications 0.75 Solder pad proposal acc. IPC 7351 Not indicated tolerances ± 0.1 2.45 5.15 Drawing-No.: 6.544-5383.02-4 Issue: 4; 18.03.10 21488 Rev. 1.2, 23-Jan-13 Document Number: 85194 5 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VSMG2000X01, VSMG2020X01 www.vishay.com Vishay Semiconductors TAPING AND REEL DIMENSIONS in millimeters: VSMG2000 Unreel direction X 2. Ø 62 ± 0.5 Reel 0 5± Ø 13 ± 0.5 Ø 330 ± 1 .5 Tape position coming out from reel 6000 pcs/reel Label posted here Technical drawings according to DIN specifications 12.4 ± 1.5 Leader and trailer tape: Empty (160 mm min.) Parts mounted Direction of pulling out Devicce Lead I Lead II Collector Emitter Cathode Anode Anode Cathode Ø 1.55 ± 0.05 I VEMT2000 VEMT2500 X 2:1 4 ± 0.1 2 ± 0.05 VEMD2000 5.5 ± 0.05 VEMD2500 VSMB2000 VSMG2000 VSMY2850RG 3.05 ± 0.1 II 12 ± 0.3 Terminal position in tape 1.75 ± 0.1 Empty (400 mm min.) 4 ± 0.1 Drawing-No.: 9.800-5100.01-4 Issue: 2; 18.03.10 21572 Rev. 1.2, 23-Jan-13 Document Number: 85194 6 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VSMG2000X01, VSMG2020X01 www.vishay.com Vishay Semiconductors TAPING AND REEL DIMENSIONS in millimeters: VSMG2020 Reel X Unreel direction 5± Ø 62 ± 0.5 2. Ø 13 ± 0.5 Ø 330 ± 1 0.5 Tape position coming out from reel 6000 pcs/reel Label posted here technical drawings according to DIN specifications 12.4 ± 1.5 Leader and trailer tape: Empty (160 mm min.) Parts mounted Direction of pulling out Ø 1.55 ± 0.05 Devicce Lead I Lead II Collector Emitter Cathode Anode Anode Cathode I VEMT2020 VEMT2520 X 2:1 4 ± 0.1 2 ± 0.05 VSMB2020 VEMD2020 VEMD2520 VSMY2850G 3.05 ± 0.1 II 4 ± 0.1 5.5 ± 0.05 VSMG2020 12 ± 0.3 Terminal position in tape 1.75 ± 0.1 Empty (400 mm min.) Drawing-No.: 9.800-5091.01-4 Issue: 3; 18.03.10 21571 Rev. 1.2, 23-Jan-13 Document Number: 85194 7 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. 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