VSMG2000X01, VSMG2020X01 Datasheet

VSMG2000X01, VSMG2020X01
www.vishay.com
Vishay Semiconductors
High Speed Infrared Emitting Diodes, 850 nm, GaAlAs, DH
FEATURES
VSMG2000X01
• Package type: surface mount
VSMG2020X01
• Package form: GW, RGW
• Dimensions (L x W x H in mm): 2.3 x 2.3 x 2.8
• AEC-Q101 qualified
• Peak wavelength: p = 850 nm
• High reliability
• High radiant power
• High radiant intensity
• Angle of half intensity:  = ± 12°
• Low forward voltage
21725-2
• Suitable for high pulse current operation
• Terminal configurations: gullwing or reserve gullwing
DESCRIPTION
• Package matches with detector VEMD2000X01 series
VSMG2000X01 series are infrared, 850 nm emitting diodes
in GaAlAs (DH) technology with high radiant power and high
speed, molded in clear, untinted plastic packages (with lens)
for surface mounting (SMD).
• Floor life: 4 weeks, MSL 2a, acc. J-STD-020
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
APPLICATIONS
• IrDA compatible data transmission
• IR-illumination (CCTV)
• Miniature light barrier
• Photointerrupters
• Optical switch
• Shaft encoders
• IR emitter source for proximity applications
PRODUCT SUMMARY
COMPONENT
Ie (mW/sr)
 (deg)
p (nm)
tr (ns)
VSMG2000X01
40
± 12
850
20
VSMG2020X01
40
± 12
850
20
Note
• Test conditions see table “Basic Characteristics“
ORDERING INFORMATION
ORDERING CODE
PACKAGING
REMARKS
PACKAGE FORM
VSMG2000X01
Tape and reel
MOQ: 6000 pcs, 6000 pcs/reel
Reverse gullwing
VSMG2020X01
Tape and reel
MOQ: 6000 pcs, 6000 pcs/reel
Gullwing
Note
• MOQ: minimum order quantity


Rev. 1.2, 23-Jan-13
Document Number: 85194
1
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VSMG2000X01, VSMG2020X01
www.vishay.com
Vishay Semiconductors
ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
SYMBOL
VALUE
UNIT
VR
5
V
Reverse voltage
Forward current
IF
100
mA
Peak forward current
tp/T = 0.5, tp  100 μs
IFM
200
mA
Surge forward current
tp = 100 μs
IFSM
1
A
PV
170
mW
Power dissipation
Junction temperature
Tj
100
°C
Operating temperature range
Tamb
- 40 to + 85
°C
Storage temperature range
Tstg
- 40 to + 100
°C
Soldering temperature
Acc. figure 9, J-STD-020
Tsd
260
°C
Thermal resistance junction/ambient
J-STD-051, leads 7 mm,
soldered on PCB
RthJA
250
K/W
120
160
IF - Forward Current (mA)
PV - Power Dissipation (mW)
180
140
120
100
RthJA = 250 K/W
80
60
40
100
80
60
RthJA = 250 K/W
40
20
20
0
0
0
10
21341
20 30
40
50
60
70 80
90
100
0
Tamb - Ambient Temperature (°C)
10
Fig. 1 - Power Dissipation Limit vs. Ambient Temperature
20 30 40
50 60 70 80
90 100
Tamb - Ambient Temperature (°C)
21342
Fig. 2 - Forward Current Limit vs. Ambient Temperature
BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
Forward voltage
Temperature coefficient of VF
Reverse current
Junction capacitance
Radiant intensity
TEST CONDITION
SYMBOL
MIN.
TYP.
MAX.
IF = 100 mA, tp = 20 ms
VF
1.25
1.45
1.7
IF = 1 A, tp = 100 μs
VF
2.3
V
mV/K
IF = 1 mA
TKVF
- 1.8
IF = 100 mA
TKVF
- 1.1
VR = 5 V
IR
VR = 0 V, f = 1 MHz, E = 0
mW/cm2
IF = 100 mA, tp = 20 ms
CJ
Ie
40
V
mV/K
10
μA
60
mW/sr
125
20
UNIT
pF
IF = 1 A, tp = 100 μs
Ie
350
IF = 100 mA, tp = 20 ms
e
40
mW
IF = 100 mA
TKe
- 0.35
%/K
Peak wavelength
IF = 30 mA
p
Spectral bandwidth
IF = 30 mA

35
nm
Radiant power
Temperature coefficient of e

Angle of half intensity
Temperature coefficient of p
mW/sr
± 12
830
850
deg
870
nm
IF = 30 mA
TKp
0.25
nm/K
Rise time
IF = 100 mA, 20 % to 80 %
tr
20
ns
Fall time
IF = 100 mA, 20 % to 80 %
tf
20
ns
IDC = 70 mA, IAC = 30 mA pp
fc
23
MHz
d
1.5
mm
Cut-off frequency
Virtual source diameter
Rev. 1.2, 23-Jan-13
Document Number: 85194
2
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VSMG2000X01, VSMG2020X01
www.vishay.com
Vishay Semiconductors
BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
1.25
Φe, rel - Relative Radiant Power
100
tp = 100 µs
tp/T = 0.001
10
1.0
0.75
0.5
0.25
1
0
0
1
2
3
VF - Forward Voltage (V)
18873_1
850
900
λ- Wavelength (nm)
16972
Fig. 3 - Forward Current vs. Forward Voltage
Fig. 6 - Relative Radiant Power vs. Wavelength
110
0°
10°
20°
30°
108
Ie rel - Relative Radiant Intensity
VF, rel - Relative Forward Voltage (%)
800
4
106
104
102
IF = 100 mA
100
IF = 10 mA
98
tp = 20 ms
96
94
IF = 1 mA
92
40°
1.0
50°
0.9
60°
0.8
70°
80°
0.7
90
- 40
- 20
0
20
40
60
80
100
0.6
Tamb - Ambient Temperature (°C)
21443
ϕ - Angular Displacement
IF - Forward Current (mA)
1000
0.4
0.2
0
21550
Fig. 4 - Relative Forward Voltage vs. Ambient Temperature
Fig. 7 - Relative Radiant Intensity vs. Angular Displacement
Ie - Radiant Intensity (mW/sr)
1000
tp = 100 µs
100
10
1
1
0.001
0.01
0.1
1
IF - Forward Current (A)
Fig. 5 - Radiant Intensity vs. Forward Current
Rev. 1.2, 23-Jan-13
Document Number: 85194
3
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VSMG2000X01, VSMG2020X01
www.vishay.com
Vishay Semiconductors
SOLDER PROFILE
DRYPACK
Devices are packed in moisture barrier bags (MBB) to
prevent the products from moisture absorption during
transportation and storage. Each bag contains a desiccant.
300
Temperature (°C)
max. 260 °C
245 °C
255 °C
240 °C
217 °C
250
FLOOR LIFE
200
max. 30 s
Floor life (time between soldering and removing from MBB)
must not exceed the time indicated on MBB label:
150
max. 100 s
max. 120 s
Floor life: 4 weeks
100
Conditions: Tamb < 30 °C, RH < 60 %
Moisture sensitivity level 2a, acc. to J-STD-020.
max. ramp up 3 °C/s max. ramp down 6 °C/s
50
0
0
50
100
19841
150
200
250
DRYING
300
In case of moisture absorption devices should be baked
before soldering. Conditions see J-STD-020 or label.
Devices taped on reel dry using recommended conditions
192 h at 40 °C (+ 5 °C), RH < 5 %.
Time (s)
Fig. 8 - Lead (Pb)-free Reflow Solder Profile acc. J-STD-020
PACKAGE DIMENSIONS in millimeters: VSMG2000
0.3
Ø 1.8 ± 0.1
Z
1.6
0.19
2.77 ± 0.2
0.05 ± 0.1
0.4
2.2
2.2
5.8 ± 0.2
Z 20:1
1.1 ± 0.1
0.4
0.5
2.3 ± 0.2
0.254
exposed copper
2.3 ± 0.2
Cathode
Pin ID
1.7
Anode
0.75
Solder pad proposal
acc. IPC 7351
technical drawings
according to DIN
specifications
Not indicated tolerances ± 0.1
Ø 2.3 ± 0.1
6.7
Drawing-No.: 6.544-5391.02-4
Issue: 2; 18.03.10
21517
Rev. 1.2, 23-Jan-13
Document Number: 85194
4
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VSMG2000X01, VSMG2020X01
www.vishay.com
Vishay Semiconductors
PACKAGE DIMENSIONS in millimeters: VSMG2020
Ø 1.8
2.77 ± 0.2
0.3
0.4
0.19
0.05
1.6
X
2.2
2.2
4.2 ± 0.2
X 20:1
exposed copper
0.6
Cathode
0.254
2.3 ± 0.2
0.4
0.5
2.3 ± 0.2
Anode
Pin ID
technical drawings
according to DIN
specifications
0.75
Solder pad proposal
acc. IPC 7351
Not indicated tolerances ± 0.1
2.45
5.15
Drawing-No.: 6.544-5383.02-4
Issue: 4; 18.03.10
21488
Rev. 1.2, 23-Jan-13
Document Number: 85194
5
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VSMG2000X01, VSMG2020X01
www.vishay.com
Vishay Semiconductors
TAPING AND REEL DIMENSIONS in millimeters: VSMG2000
Unreel direction
X
2.
Ø 62 ± 0.5
Reel
0
5±
Ø
13
±
0.5
Ø 330 ± 1
.5
Tape position
coming out from reel
6000 pcs/reel
Label posted here
Technical drawings
according to DIN
specifications
12.4 ± 1.5
Leader and trailer tape:
Empty (160 mm min.)
Parts mounted
Direction of pulling out
Devicce
Lead I
Lead II
Collector
Emitter
Cathode
Anode
Anode
Cathode
Ø 1.55 ± 0.05
I
VEMT2000
VEMT2500
X 2:1
4 ± 0.1
2 ± 0.05
VEMD2000
5.5 ± 0.05
VEMD2500
VSMB2000
VSMG2000
VSMY2850RG
3.05 ± 0.1
II
12 ± 0.3
Terminal position in tape
1.75 ± 0.1
Empty (400 mm min.)
4 ± 0.1
Drawing-No.: 9.800-5100.01-4
Issue: 2; 18.03.10
21572
Rev. 1.2, 23-Jan-13
Document Number: 85194
6
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VSMG2000X01, VSMG2020X01
www.vishay.com
Vishay Semiconductors
TAPING AND REEL DIMENSIONS in millimeters: VSMG2020
Reel
X
Unreel direction
5±
Ø 62 ± 0.5
2.
Ø
13
±
0.5
Ø 330 ± 1
0.5
Tape position
coming out from reel
6000 pcs/reel
Label posted here
technical drawings
according to DIN
specifications
12.4 ± 1.5
Leader and trailer tape:
Empty (160 mm min.)
Parts mounted
Direction of pulling out
Ø 1.55 ± 0.05
Devicce
Lead I
Lead II
Collector
Emitter
Cathode
Anode
Anode
Cathode
I
VEMT2020
VEMT2520
X 2:1
4 ± 0.1
2 ± 0.05
VSMB2020
VEMD2020
VEMD2520
VSMY2850G
3.05 ± 0.1
II
4 ± 0.1
5.5 ± 0.05
VSMG2020
12 ± 0.3
Terminal position in tape
1.75 ± 0.1
Empty (400 mm min.)
Drawing-No.: 9.800-5091.01-4
Issue: 3; 18.03.10
21571
Rev. 1.2, 23-Jan-13
Document Number: 85194
7
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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Revision: 02-Oct-12
1
Document Number: 91000