NTE16006 Silicon NPN Transistor Low Frequency Output Amp w/High Current Gain Features: D High DC Current Gain D Low Collector–Emitter Saturation Voltage D An M type mold package that allows easy manual and automatic insertion. Can be firmly mounted flush to PCB surface Absolute Maximum Ratings: (TA = +25°C unless otherwise specified) Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20V Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20V Emitter–Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15V Collector Current, IC Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 700mA Peak . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.5A Collector Power Dissipation (Note 1), PC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1W Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150°C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55 ° to +150°C Note 1. Copper foil on PCB against Collector: 1.7mm thick, 1cm2 in area. Electrical Characteristics: (TA = +25°C unless otherwise specified) Parameter Symbol Test Conditions Min Typ Max Unit Collector Cutoff Current ICBO VCB = 15V, IE = 0 – – 1 µA Emitter Cut–Off Current ICEO VCE = 15V, IB = 0 – – 10 µA Collector–Base Voltage VCBO IC = 10µA, IE = 0 20 – – V Collector–Emitter Voltage VCEO IC = 1mA, IB = 0 20 – – V Emitter–Base Voltage VEBO IE = 10µA, IC = 0 15 – – V DC Current Gain Collector–Emitter Saturation Voltage Transition Frequency Collector Output Capacitance Note 2. Pulse Measurement hFE VCE = 10V, IC = 150mA, Note 2 1000 – 2500 – VCE(sat) IC = 500mA, IB = 50mA, Note 2 – – 0.4 V VCB = 20V, IE = –20mA, f = 200MHz – 55 – MHz VCB = 10 V, IE = 0, f = 1MHz – 11 15 pF fT Cob .271 (6.9) .098 (2.5) .137 (3.5) B C .177 (4.5) E .039 (1.0) .039 (1.0) .122 (3.1) .098 (2.5) .161 (4.1)