Transistor 2SD973, 2SD973A Silicon NPN epitaxial planer type For low-frequency power amplification Unit: mm 6.9±0.1 Parameter Symbol Collector to 2SD973 base voltage 2SD973A Collector to 2SD973 * Ratings 30 VCBO Emitter to base voltage VEBO Peak collector current 25 ICP 1.5 A Collector current IC 1 A Collector power dissipation PC* 1 W Junction temperature Tj 150 ˚C Storage temperature Tstg –55 ~ +150 ˚C voltage 2SD973A Collector to emitter 2SD973 voltage 2SD973A Emitter to base voltage Conditions VCBO IC = 10µA, IE = 0 VCEO IC = 2mA, IB = 0 VEBO IE = 10µA, IC = 0 hFE1 Forward current transfer ratio 1.0 4.5±0.1 4.1±0.2 7 EIAJ:SC–71 M Type Mold Package min typ VCB = 20V, IE = 0 ICBO 2SD973 1:Base 2:Collector 3:Emitter 2.5 or more, and the board Symbol Collector to base 1 (Ta=25˚C) Parameter Collector cutoff current 2 2.5 V Printed circuit board: Copper foil area of thickness of 1.7mm for the collector portion 0.45±0.05 V 50 1cm2 0.55±0.1 3 5 ■ Electrical Characteristics 0. Unit V 60 VCEO emitter voltage 2SD973A 0.85 (Ta=25˚C) 1.25±0.05 ■ Absolute Maximum Ratings 1.0 1.5 R0.9 R0.9 R ● Low collector to emitter saturation voltage VCE(sat). M type package allowing easy automatic and manual insertion as well as stand-alone fixing to the printed circuit board. 1.0±0.1 ● 0.4 ■ Features 2.5±0.1 2.4±0.2 2.0±0.2 3.5±0.1 1.5 *1 VCE = 10V, IC = 500mA*2 max Unit 0.1 µA 30 V 60 25 V 50 5 V 85 160 50 100 340 hFE2 VCE = 5V, IC = 1A*2 Collector to emitter saturation voltage VCE(sat) IC = 500mA, IB = 50mA*2 0.2 0.4 V Base to emitter saturation voltage VBE(sat) IC = 500mA, IB = 50mA*2 0.85 1.2 V Transition frequency fT VCB = 10V, IE = –50mA, f = 200MHz 200 Collector output capacitance Cob VCB = 10V, IE = 0. f = 1MHz 11 MHz 20 *2 *1h FE1 pF Pulse measurement Rank classification Rank Q R S hFE1 85 ~ 170 120 ~ 240 170 ~ 340 1 Transistor 2SD973, 2SD973A PC — Ta IC — VCE Printed circut board: Copper foil area of 1cm2 or more, and the board thickness of 1.7mm for the collector portion. 1.0 0.8 0.6 0.4 1.2 Ta=25˚C 1.25 IB=10mA 9mA 8mA 1.00 7mA 6mA 0.75 5mA 4mA 3mA 0.50 2mA 0.25 0.2 0 60 80 100 120 140 160 2 1 Ta=75˚C 25˚C –25˚C 0.03 0.01 0.003 0.001 0.01 0.03 0.1 0.3 1 10 3 10 3 25˚C Ta=–25˚C 1 75˚C 0.3 0.1 0.03 0.01 0.01 0.03 10 0.1 0.3 Collector output capacitance Cob (pF) 120 80 40 1 3 Emitter current IE (mA) –100 8 10 12 500 400 300 Ta=75˚C 200 25˚C –25˚C 100 0 0.01 0.03 10 0.1 0.3 1 3 10 Collector current IC (A) VCER — RBE 120 IE=0 f=1MHz Ta=25˚C 40 30 20 10 0 –30 6 VCE=10 Cob — VCB 160 4 600 50 –10 2 Base current IB (mA) Collector current IC (A) VCB=10V Ta=25˚C –3 0 hFE — IC 30 fT — IE 0 –1 8 IC/IB=10 Collector current IC (A) 200 6 100 Base to emitter saturation voltage VBE(sat) (V) Collector to emitter saturation voltage VCE(sat) (V) 3 0.1 4 VBE(sat) — IC IC/IB=10 0.3 0.4 Collector to emitter voltage VCE (V) VCE(sat) — IC 10 0.6 0 0 Forward current transfer ratio hFE 40 0.8 0.2 1mA 1 3 10 30 100 Collector to base voltage VCB (V) Collector to emitter voltage VCER (V) 20 Ambient temperature Ta (˚C) Transition frequency fT (MHz) 1.0 0 0 2 VCE=10V Ta=25˚C Collector current IC (A) 1.2 IC — I B 1.50 Collector current IC (A) Collector power dissipation PC (W) 1.4 IC=10mA Ta=25˚C 100 80 60 2SD973A 40 2SD973 20 0 0.1 0.3 1 3 10 30 100 Base to emitter resistance RBE (kΩ) Transistor 2SD973, 2SD973A ICEO — Ta 104 Area of safe operation (ASO) 10 VCE=10V Single pulse Ta=25˚C 3 10 t=10ms IC 0.3 t=1s 0.1 0.03 0.01 0.003 1 0 20 40 60 80 100 120 140 160 Ambient temperature Ta (˚C) 0.001 0.1 0.3 1 3 10 2SD973A ICEO (Ta) ICEO (Ta=25˚C) 102 1 2SD973 Collector current IC (A) ICP 103 30 100 Collector to emitter voltage VCE (V) 3