INTERSIL HGTG20N100D2

HGTG20N100D2
20A, 1000V N-Channel IGBT
May 1995
Features
Package
• 34A, 1000V
JEDEC STYLE TO-247
EMITTER
• Latch Free Operation
COLLECTOR
• Typical Fall Time 520ns
GATE
• High Input Impedance
• Low Conduction Loss
COLLECTOR
(BOTTOM SIDE
METAL)
Description
The HGTG20N100D2 is a MOS gated high voltage switching
device combining the best features of MOSFETs and bipolar
transistors. The device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor.
The much lower on-state voltage drop varies only moderately
between +25oC and +150oC.
Terminal Diagram
N-CHANNEL ENHANCEMENT MODE
IGBTs are ideal for many high voltage switching applications
operating at frequencies where low conduction losses are essential, such as: AC and DC motor controls, power supplies and
drivers for solenoids, relays and contactors.
C
PACKAGING AVAILABILITY
PART NUMBER
HGTG20N100D2
PACKAGE
TO-247
Absolute Maximum Ratings
G
BRAND
G20N100D2
E
TC = +25oC, Unless Otherwise Specified
Collector-Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . BVCES
Collector-Gate Voltage RGE = 1MΩ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . BVCGR
Collector Current Continuous at TC = +25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IC25
at TC = +90oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IC90
Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ICM
Gate-Emitter Voltage Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGES
Gate-Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGEM
Switching Safe Operating Area at TJ = +150oC . . . . . . . . . . . . . . . . . . . . . . . . . . . .SSOA
Power Dissipation Total at TC = +25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD
Power Dissipation Derating TC > +25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . . TJ, TSTG
Maximum Lead Temperature for Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL
(0.125 inch from case for 5 seconds)
Short Circuit Withstand Time (Note 2) at VGE = 15V . . . . . . . . . . . . . . . . . . . . . . . . . . tSC
at VGE = 10V . . . . . . . . . . . . . . . . . . . . . . . . . . tSC
NOTES:
HGTG20N100D2
1000
1000
34
20
100
±20
±30
100A at 0.8 BVCES
150
1.20
-55 to +150
260
UNITS
V
V
A
A
A
V
V
W
W/oC
oC
oC
3
15
µs
µs
1. Repetitive Rating: Pulse width limited by maximum junction temperature.
2. VCE(PEAK) = 600V, TC = +125oC, RGE = 25Ω.
INTERSIL CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS:
4,364,073
4,587,713
4,641,162
4,794,432
4,860,080
4,969,027
4,417,385
4,598,461
4,644,637
4,801,986
4,883,767
4,430,792
4,605,948
4,682,195
4,803,533
4,888,627
4,443,931
4,618,872
4,684,413
4,809,045
4,890,143
4,466,176
4,620,211
4,694,313
4,809,047
4,901,127
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
http://www.intersil.com or 407-727-9207 | Copyright © Intersil Corporation 1999
3-93
4,516,143
4,631,564
4,717,679
4,810,665
4,904,609
4,532,534
4,639,754
4,743,952
4,823,176
4,933,740
4,567,641
4,639,762
4,783,690
4,837,606
4,963,951
File Number
2826.3
Specifications HGTG20N100D2
Electrical Specifications
TC = +25oC, Unless Otherwise Specified
LIMITS
PARAMETERS
SYMBOL
Collector-Emitter Breakdown Voltage
TEST CONDITIONS
IC = 250mA, VGE = 0V
BVCES
Collector-Emitter Leakage Voltage
ICES
Gate-Emitter Threshold Voltage
MAX
UNITS
1000
-
-
V
TC =
-
-
250
µA
TC =
+125oC
-
-
1.0
mA
IC = IC90,
VGE = 15V
TC =
+25oC
-
3.1
3.8
V
TC =
+125oC
-
2.9
3.6
V
IC = IC90,
VGE = 10V
TC = +25oC
-
3.3
4.1
V
TC = +125oC
-
3.2
4.0
V
3.0
4.5
6.0
V
VCE = BVCES
VCE(SAT)
TYP
+25oC
VCE = 0.8 BVCES
Collector-Emitter Saturation Voltage
MIN
VGE(TH)
IC = 500µA,
VCE = VGE
Gate-Emitter Leakage Current
IGES
VGE = ±20V
-
-
±250
nA
Gate-Emitter Plateau Voltage
VGEP
IC = IC90, VCE = 0.5 BVCES
-
7.1
-
V
IC = IC90,
VCE = 0.5 BVCES
VGE = 15V
-
120
160
nC
VGE = 20V
-
163
212
nC
L = 50µH, IC = IC90, RG = 25Ω,
VGE = 15V, TJ = +125oC,
VCE = 0.8 BVCES
-
100
-
ns
-
150
-
ns
tD(OFF)I
-
500
650
ns
tFI
-
520
680
ns
-
3.7
-
mJ
-
100
-
ns
-
150
-
ns
On-State Gate Charge
QG(ON)
Current Turn-On Delay Time
tD(ON)I
Current Rise Time
tRI
Current Turn-Off Delay Time
Current Fall Time
Turn-Off Energy (Note 1)
WOFF
Current Turn-On Delay Time
tD(ON)I
Current Rise Time
TC =
+25oC
L = 50µH, IC = IC90, RG = 25Ω,
VGE = 10V, TJ = +125oC,
VCE = 0.8 BVCES
tRI
Current Turn-Off
tD(OFF)I
-
410
530
ns
Current Fall Time
tFI
-
520
680
ns
WOFF
-
3.7
-
mJ
0.83
oC/W
Turn-Off Energy (Note 1)
Thermal Resistance
RθJC
-
0.7
NOTE: 1. Turn-Off Energy Loss (WOFF) is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse and
ending at the point where the collector current equals zero (ICE = 0A) The HGTG20N100D2 was tested per JEDEC standard No. 24-1
Method for Measurement of Power Device Turn-Off Switching Loss. This test method produces the true total Turn-Off Energy Loss.
Typical Performance Curves
PULSE DURATION = 250µs
DUTY CYCLE < 0.5%, TC = +25oC
PULSE DURATION = 250µs
DUTY CYCLE < 0.5%, VCE = 10V
ICE, COLLECTOR-EMITTER CURRENT (A)
ICE, COLLECTOR-EMITTER CURRENT (A)
40
30
20
TC = +150oC
o
TC = +25 C
10
TC = -40oC
0
0
2
4
6
8
80
VGE = 15V
70
VGE = 8.0V
60
50
40
VGE = 7.5V
30
VGE = 6.0V
20
10
FIGURE 1. TRANSFER CHARACTERISTICS (TYPICAL)
VGE = 7.0V
VGE = 6.5V
0
0
10
VGE, GATE-TO-EMITTER VOLTAGE (V)
VGE = 8.5V
2
4
6
8
VCE, COLLECTOR-TO-EMITTER VOLTAGE (V)
10
FIGURE 2. SATURATION CHARACTERISTICS (TYPICAL)
3-94
HGTG20N100D2
Typical Performance Curves (Continued)
2.5
VCE = 800V, TJ = +150oC,
VGE = 15V, RG = 25Ω, L = 50µH
VGE = 15V
30
2.0
tFI , FALL TIME (µs)
25
VGE = 10V
20
15
1.5
1.0
10
0.5
5
0
0.0
+25
+50
+75
+100
+125
+150
1
10
TC , CASE TEMPERATURE (oC)
FIGURE 3. DC COLLECTOR CURRENT vs CASE TEMPERATURE
VCE, COLLECTOR-EMITTER VOLTAGE (V)
f = 1MHz
5000
C, CAPACITANCE (pF)
FIGURE 4. FALL TIME vs COLLECTOR-EMITTER CURRENT
1000
6000
4000
CISS
3000
COSS
2000
1000
CRSS
RL = 29Ω
IG(REF) = 1.8mA
VCC = BVCES
GATEEMITTER
VOLTAGE
750
5
250
0.75 BVCES
0.50 BVCES
0.50 BVCES
0.25 BVCES
0.25 BVCES
COLLECTOR-EMITTER VOLTAGE
10
15
20
0
25
20
VCE, COLLECTOR-TO-EMITTER VOLTAGE (V)
FIGURE 5. CAPACITANCE vs COLLECTOR-EMITTER VOLTAGE
IG(REF)
IG(ACT)
80
TIME (µs)
IG(REF)
IG(ACT)
FIGURE 6. NORMALIZED SWITCHING WAVEFORMS AT CONSTANT GATE CURRENT (REFER TO APPLICATION
NOTES AN7254 AND AN7260)
5
10
WOFF , TURN-OFF SWITCHING LOSS (mJ)
VCE(ON), SATURATION VOLTAGE (V)
0.75 BVCES
0
5
10
VGE = 10V
VCC = BVCES
500
0
0
40
ICE, COLLECTOR-EMITTER CURRENT (A)
VGE, GATE-EMITTER VOLTAGE (V)
ICE, DC COLLECTOR CURRENT (A)
35
TJ = +150oC
VGE = 10V
4
3
VGE = 15V
2
1
TJ = +150oC, VGE = 15V,
RG = 25Ω, L = 50µH
VCE = 800V, VGE = 10V, 15V
1.0
VCE = 400V, VGE = 10V, 15V
0.1
0
1
10
40
1
ICE, COLLECTOR-EMITTER CURRENT (A)
10
40
ICE, COLLECTOR-EMITTER CURRENT (A)
FIGURE 7. SATURATION VOLTAGE vs COLLECTOR-EMITTER
CURRENT
3-95
FIGURE 8. TURN-OFF SWITCHING LOSS vs COLLECTOREMITTER CURRENT
HGTG20N100D2
Typical Performance Curves (Continued)
1.2
1.0
fOP , OPERATING FREQUENCY (kHz)
tD(OFF)I , TURN-OFF DELAY (µs)
100
TJ = +150oC
VCE = 800V
L = 50µH
VGE = 15V, RG = 50Ω
VGE = 10V, RG = 50Ω
0.8
VGE = 15V, RG = 25Ω
0.6
VGE = 10V, RG = 25Ω
0.4
0.2
VCE = 400V
fMAX1 = 0.05/tD(OFF)I
fMAX2 = (PD - PC)/WOFF
PC = DUTY FACTOR = 50%
RθJC = 0.7oC/W
10
VCE = 800V
TJ = +150oC, TC = +75oC, VGE = 15V
RG = 25Ω, L = 50µH
1
0.0
1
10
1
10
100
ICE, COLLECTOR-EMITTER CURRENT (A)
NOTE:
PD = ALLOWABLE DISSIPATION PC = CONDUCTION DISSIPATION
40
ICE, COLLECTOR-EMITTER CURRENT (A)
ICE, COLLECTOR-EMITTER CURRENT (A)
FIGURE 9. TURN-OFF DELAY vs COLLECTOR-EMITTER
CURRENT
FIGURE 10. OPERATING FREQUENCY vs COLLECTOREMITTER CURRENT AND VOLTAGE
40
VGE = 10V
TJ = +150oC
10
TJ = +25oC
1
1
2
3
4
5
VCE(ON), SATURATION VOLTAGE (V)
FIGURE 11. COLLECTOR-EMITTER SATURATION VOLTAGE
Test Circuit
L = 50µH
1/RG = 1/RGEN + 1/RGE
VCC
800V
RGEN = 50Ω
20V
0V
RGE = 50Ω
FIGURE 12. INDUCTIVE SWITCHING TEST CIRCUIT
3-96
+
-
HGTG20N100D2
Operating Frequency Information
Operating frequency information for a typical device (Figure
10) is presented as a guide for estimating device performance
for a specific application. Other typical frequency vs collector
current (ICE) plots are possible using the information shown
for a typical unit in Figures 7, 8 and 9. The operating
frequency plot (Figure 10) of a typical device shows fMAX1 or
fMAX2 whichever is smaller at each point. The information is
based on measurements of a typical device and is bounded
by the maximum rated junction temperature.
fMAX1 is defined by fMAX1 = 0.05/tD(OFF)I. tD(OFF)I deadtime
(the denominator) has been arbitrarily held to 10% of the onstate time for a 50% duty factor. Other definitions are possible.
tD(OFF)I is defined as the time between the 90% point of the
trailing edge of the input pulse and the point where the
collector current falls to 90% of its maximum value. Device
turn-off delay can establish an additional frequency limiting
condition for an application other than TJMAX. tD(OFF)I is
important when controlling output ripple under a lightly loaded
condition.
fMAX2 is defined by fMAX2 = (PD - PC)/WOFF . The allowable
dissipation (PD) is defined by PD = (TJMAX - TC)/RθJC. The sum
of device switching and conduction losses must not exceed PD.
A 50% duty factor was used (Figure 10) and the conduction
losses (PC) are approximated by PC = (VCE • ICE)/2. WOFF is
defined as the integral of the instantaneous power loss starting
at the trailing edge of the input pulse and ending at the point
where the collector current equals zero (ICE = 0A).
The switching power loss (Figure 10) is defined as fMAX2 •
WOFF. Turn-on switching losses are not included because they
can be greatly influenced by external circuit conditions and components.
All Intersil semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certification.
Intersil products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time without
notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate
and reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which
may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries.
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