HGTD7N60C3S, HGTP7N60C3 Data Sheet January 2000 14A, 600V, UFS Series N-Channel IGBTs Features The HGTD7N60C3S and HGTP7N60C3 are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25oC and 150oC. • 14A, 600V at TC = 25oC The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as: AC and DC motor controls, power supplies and drivers for solenoids, relays and contactors. Packaging File Number 4141.3 • 600V Switching SOA Capability • Typical Fall Time. . . . . . . . . . . . . . . . 140ns at TJ = 150oC • Short Circuit Rating • Low Conduction Loss JEDEC TO-220AB EMITTER COLLECTOR GATE Formerly Developmental Type TA49115. Ordering Information PART NUMBER COLLECTOR (FLANGE) PACKAGE BRAND HGTD7N60C3S TO-252AA G7N60C HGTP7N60C3 TO-220AB G7N60C3 JEDEC TO-252AA NOTE: When ordering, use the entire part number. Add the suffix 9A to obtain the TO-252AA variant in tape and reel, i.e. HGTD7N60C3S9A. GATE EMITTER COLLECTOR (FLANGE) Symbol C G E INTERSIL CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS 4,364,073 4,417,385 4,430,792 4,443,931 4,466,176 4,516,143 4,532,534 4,587,713 4,598,461 4,605,948 4,620,211 4,631,564 4,639,754 4,639,762 4,641,162 4,644,637 4,682,195 4,684,413 4,694,313 4,717,679 4,743,952 4,783,690 4,794,432 4,801,986 4,803,533 4,809,045 4,809,047 4,810,665 4,823,176 4,837,606 4,860,080 4,883,767 4,888,627 4,890,143 4,901,127 4,904,609 4,933,740 4,963,951 4,969,027 1 CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures. 1-888-INTERSIL or 321-724-7143 | Copyright © Intersil Corporation 2000 HGTD7N60C3S, HGTP7N60C3 Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified HGTD7N60C3S HGTP7N60C3 UNITS Collector to Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . BVCES 600 V Collector Current Continuous At TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IC25 At TC = 110oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IC110 Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .ICM Gate to Emitter Voltage Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGES Gate to Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGEM Switching Safe Operating Area at TJ = 150oC, Figure 14 . . . . . . . . . . . . . . . . . . . . . . . . . . . .SSOA Power Dissipation Total at TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD Power Dissipation Derating TC > 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Reverse Voltage Avalanche Energy. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . EARV Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG Maximum Lead Temperature for Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .TL Short Circuit Withstand Time (Note 2) at VGE = 15V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . tSC Short Circuit Withstand Time (Note 2) at VGE = 10V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . tSC 14 7 56 ±20 ±30 40A at 480V 60 0.48 100 -40 to 150 260 1 8 A A A V V W W/oC mJ oC oC µs µs CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. NOTES: 1. Repetitive Rating: Pulse width limited by maximum junction temperature. 2. VCE(PK) = 360V, TJ = 125oC, RG = 50Ω. TC = 25oC, Unless Otherwise Specified Electrical Specifications PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS Collector to Emitter Breakdown Voltage BVCES IC = 250µA, VGE = 0V 600 - - V Emitter to Collector Breakdown Voltage BVECS IC = 3mA, VGE = 0V 16 30 - V Collector to Emitter Leakage Current Collector to Emitter Saturation Voltage Gate to Emitter Threshold Voltage ICES VCE(SAT) VCE = BVCES TC = 25oC - - 250 µA VCE = BVCES TC = 150oC - - 2.0 mA IC = IC110, VGE = 15V TC = 25oC - 1.6 2.0 V TC = 150oC - 1.9 2.4 V TC = 25oC 3.0 5.0 6.0 V - - ±250 nA VCE(PK) = 480V 40 - - A VCE(PK) = 600V 6 - - A IC = IC110, VCE = 0.5 BVCES - 8 - V IC = IC110, VCE = 0.5 BVCES VGE = 15V - 23 30 nC VGE = 20V - 30 38 nC VGE(TH) IC = 250µA, VCE = VGE Gate to Emitter Leakage Current IGES VGE = ±25V Switching SOA SSOA TJ = 150oC RG = 50Ω VGE = 15V L = 1mH Gate to Emitter Plateau Voltage VGEP On-State Gate Charge QG(ON) 2 HGTD7N60C3S, HGTP7N60C3 TC = 25oC, Unless Otherwise Specified (Continued) Electrical Specifications PARAMETER SYMBOL Current Turn-On Delay Time td(ON)I Current Rise Time trI Current Turn-Off Delay Time td(OFF)I TEST CONDITIONS TJ = 150oC ICE = IC110 VCE(PK) = 0.8 BVCES VGE = 15V RG= 50Ω L = 1.0mH MIN TYP MAX UNITS - 8.5 - ns - 11.5 - ns - 350 400 ns - 140 275 ns µJ Current Fall Time tfI Turn-On Energy EON - 165 - Turn-Off Energy (Note 3) EOFF - 600 - µJ 2.1 oC/W Thermal Resistance RθJC - - NOTE: 3. Turn-Off Energy Loss (EOFF) is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse and ending at the point where the collector current equals zero (ICE = 0A). The HGTD7N60C3S and HGTP7N60C3 were tested per JEDEC standard No. 24-1 Method for Measurement of Power Device Turn-Off Switching Loss. This test method produces the true total Turn-Off Energy Loss. TurnOn losses include diode losses. ICE, COLLECTOR TO EMITTER CURRENT (A) ICE, COLLECTOR TO EMITTER CURRENT (A) Typical Performance Curves 40 DUTY CYCLE <0.5%, VCE = 10V 35 PULSE DURATION = 250µs 30 25 TC = 150oC 20 TC = 25oC 15 TC = -40oC 10 5 0 4 6 8 10 12 40 PULSE DURATION = 250µs, 35 DUTY CYCLE <0.5%, TC = 25oC 30 20 9.0V 15 8.5V 10 8.0V 7.5V 5 7.0V 0 0 14 2 ICE, COLLECTOR TO EMITTER CURRENT (A) ICE, COLLECTOR TO EMITTER CURRENT (A) PULSE DURATION = 250µs 35 DUTY CYCLE <0.5%, VGE = 10V 30 TC = -40oC 20 TC = 150oC TC = 25oC 5 0 0 1 2 3 4 5 VCE , COLLECTOR TO EMITTER VOLTAGE (V) FIGURE 3. COLLECTOR TO EMITTER ON-STATE VOLTAGE 3 6 8 10 FIGURE 2. SATURATION CHARACTERISTICS 40 10 4 VCE, COLLECTOR TO EMITTER VOLTAGE (V) FIGURE 1. TRANSFER CHARACTERISTICS 15 10.0V VGE = 15.0V 25 VGE , GATE TO EMITTER VOLTAGE (V) 25 12.0V 40 PULSE DURATION = 250µs DUTY CYCLE <0.5%, VGE = 15V 35 TC = -40oC 30 TC = 25oC 25 20 TC = 150oC 15 10 5 0 0 1 2 3 4 5 VCE, COLLECTOR TO EMITTER VOLTAGE (V) FIGURE 4. COLLECTOR TO EMITTER ON-STATE VOLTAGE HGTD7N60C3S, HGTP7N60C3 ICE , DC COLLECTOR CURRENT (A) 15 VGE = 15V 12 9 6 3 0 25 50 75 100 125 12 10 150 120 ISC 8 100 6 80 4 60 tSC 2 10 11 TC , CASE TEMPERATURE (oC) td(OFF)I , TURN-OFF DELAY TIME (ns) td(ON)I , TURN-ON DELAY TIME (ns) 30 20 VGE = 10V VGE = 15V 10 5 2 5 11 8 14 17 TJ = 150oC, RG = 50Ω, L = 1mH, VCE(PK) = 480V 400 350 VGE = 10V OR 15V 300 250 200 20 2 5 8 11 14 17 20 ICE , COLLECTOR TO EMITTER CURRENT (A) FIGURE 7. TURN-ON DELAY TIME vs COLLECTOR TO EMITTER CURRENT FIGURE 8. TURN-OFF DELAY TIME vs COLLECTOR TO EMITTER CURRENT 300 TJ = 150oC, RG = 50Ω, L = 1mH, VCE(PK) = 480V TJ = 150oC, RG = 50Ω, L = 1mH, VCE(PK) = 480V 250 100 tfI , FALL TIME (ns) trI , TURN-ON RISE TIME (ns) 40 15 14 450 ICE , COLLECTOR TO EMITTER CURRENT (A) 200 13 FIGURE 6. SHORT CIRCUIT WITHSTAND TIME 500 TJ = 150oC, RG = 50Ω, L = 1mH, VCE(PK) = 480V 40 12 VGE , GATE TO EMITTER VOLTAGE (V) FIGURE 5. MAXIMUM DC COLLECTOR CURRENT vs CASE TEMPERATURE 50 140 VCE = 360V, RG = 50Ω, TJ = 125oC ISC, PEAK SHORT CIRCUIT CURRENT(A) (Continued) tSC , SHORT CIRCUIT WITHSTAND TIME (µS) Typical Performance Curves VGE = 10V VGE = 15V 200 VGE = 10V or 15V 150 10 5 2 5 8 11 14 17 ICE , COLLECTOR TO EMITTER CURRENT (A) FIGURE 9. TURN-ON RISE TIME vs COLLECTOR TO EMITTER CURRENT 4 20 100 2 5 8 11 14 17 ICE , COLLECTOR TO EMITTER CURRENT (A) FIGURE 10. TURN-OFF FALL TIME vs COLLECTOR TO EMITTER CURRENT 20 HGTD7N60C3S, HGTP7N60C3 3000 TJ = 150oC, RG = 50Ω, L = 1mH, VCE(PK) = 480V EOFF, TURN-OFF ENERGY LOSS (µJ) EON , TURN-ON ENERGY LOSS (µJ) 2000 (Continued) 1000 VGE = 10V 500 VGE = 15V 100 40 2 5 8 11 14 17 TJ = 150oC, RG = 50Ω, L = 1mH, VCE(PK) = 480V 1000 VGE = 10V or 15V 500 100 20 2 ICE , COLLECTOR TO EMITTER CURRENT (A) fMAX , OPERATING FREQUENCY (kHz) TJ = 150oC, TC = 75oC RG = 50Ω, L = 1mH 100 VGE = 15V VGE = 10V fMAX1 = 0.05/(tD(OFF)I + tD(ON)I) fMAX2 = (PD - PC)/(EON + EOFF) 10 PD = ALLOWABLE DISSIPATION PC = CONDUCTION DISSIPATION (DUTY FACTOR = 50%) RθJC = 2.1oC/W 1 2 10 20 30 50 C, CAPACITANCE (pF) CIES 800 600 400 200 COES 0 0 5 10 15 20 VCE, COLLECTOR TO EMITTER VOLTAGE (V) FIGURE 15. CAPACITANCE vs COLLECTOR TO EMITTER VOLTAGE 5 17 20 40 30 20 10 0 0 100 200 300 400 500 600 25 FIGURE 14. MINIMUM SWITCHING SAFE OPERATING AREA VCE , COLLECTOR TO EMITTER VOLTAGE (V) FREQUENCY = 1MHz CRES 14 VCE(PK), COLLECTOR TO EMITTER VOLTAGE (V) FIGURE 13. OPERATING FREQUENCY vs COLLECTOR TO EMITTER CURRENT 1000 11 TJ = 150oC, VGE = 15V, RG = 50Ω, L = 1mH ICE, COLLECTOR TO EMITTER CURRENT (A) 1200 8 FIGURE 12. TURN-OFF ENERGY LOSS vs COLLECTOR TO EMITTER CURRENT ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 11. TURN-ON ENERGY LOSS vs COLLECTOR TO EMITTER CURRENT 200 5 ICE , COLLECTOR TO EMITTER CURRENT (A) IG(REF) = 1.044mA, RL = 50Ω, TC = 25oC 600 15 12.5 500 VCE = 600V 400 10 300 7.5 5 200 VCE = 400V VCE = 200V 100 2.5 0 0 5 10 15 20 25 QG , GATE CHARGE (nC) FIGURE 16. GATE CHARGE WAVEFORMS 0 30 VGE , GATE TO EMITTER VOLTAGE (V) Typical Performance Curves HGTD7N60C3S, HGTP7N60C3 ZθJC , NORMALIZED THERMAL RESPONSE Typical Performance Curves (Continued) 100 0.5 0.2 0.1 10-1 0.05 0.02 t1 0.01 DUTY FACTOR, D = t1 / t2 PEAK TJ = (PD X ZθJC X RθJC) + TC SINGLE PULSE 10-2 10-5 10-4 10-3 10-2 10-1 PD t2 101 100 t1 , RECTANGULAR PULSE DURATION (s) FIGURE 17. IGBT NORMALIZED TRANSIENT THERMAL IMPEDANCE, JUNCTION TO CASE Test Circuit and Waveform L = 1mH 90% RHRD660 10% VGE EOFF RG = 50Ω EON VCE + - 90% VDD = 480V ICE 10% td(OFF)I trI tfI FIGURE 18. INDUCTIVE SWITCHING TEST CIRCUIT 6 td(ON)I FIGURE 19. SWITCHING TEST WAVEFORMS HGTD7N60C3S, HGTP7N60C3 Handling Precautions for IGBTs Operating Frequency Information Insulated Gate Bipolar Transistors are susceptible to gate-insulation damage by the electrostatic discharge of energy through the devices. When handling these devices, care should be exercised to assure that the static charge built in the handler’s body capacitance is not discharged through the device. With proper handling and application procedures, however, IGBTs are currently being extensively used in production by numerous equipment manufacturers in military, industrial and consumer applications, with virtually no damage problems due to electrostatic discharge. IGBTs can be handled safely if the following basic precautions are taken: Figure 13 is presented as a guide for estimating device performance for a specific application. Other typical frequency vs collector current (ICE) plots are possible using the information shown for a typical unit in Figures 4, 7, 8, 11 and 12. The operating frequency plot (Figure 13) of a typical device shows fMAX1 or fMAX2 whichever is smaller at each point. The information is based on measurements of a typical device and is bounded by the maximum rated junction temperature. 1. Prior to assembly into a circuit, all leads should be kept shorted together either by the use of metal shorting springs or by the insertion into conductive material such as “ECCOSORBD LD26” or equivalent. 2. When devices are removed by hand from their carriers, the hand being used should be grounded by any suitable means - for example, with a metallic wristband. 3. Tips of soldering irons should be grounded. 4. Devices should never be inserted into or removed from circuits with power on. 5. Gate Voltage Rating - Never exceed the gate-voltage rating of VGEM. Exceeding the rated VGE can result in permanent damage to the oxide layer in the gate region. 6. Gate Termination - The gates of these devices are essentially capacitors. Circuits that leave the gate opencircuited or floating should be avoided. These conditions can result in turn-on of the device due to voltage buildup on the input capacitor due to leakage currents or pickup. fMAX1 is defined by fMAX1 = 0.05/(tD(OFF)I + tD(ON)I). Deadtime (the denominator) has been arbitrarily held to 10% of the on-state time for a 50% duty factor. Other definitions are possible. tD(OFF)I and tD(ON)I are defined in Figure 19. Device turn-off delay can establish an additional frequency limiting condition for an application other than TJM. tD(OFF)I is important when controlling output ripple under a lightly loaded condition. fMAX2 is defined by fMAX2 = (PD - PC)/(EOFF + EON). The allowable dissipation (PD) is defined by PD = (TJM - TC)/RθJC. The sum of device switching and conduction losses must not exceed PD. A 50% duty factor was used (Figure 13) and the conduction losses (PC) are approximated by PC = (VCE x ICE)/2. EON and EOFF are defined in the switching waveforms shown in Figure 19. EON is the integral of the instantaneous power loss (ICE x VCE) during turn-on and EOFF is the integral of the instantaneous power loss (ICE x VCE) during turn-off. All tail losses are included in the calculation for EOFF; i.e. the collector current equals zero (ICE = 0). 7. Gate Protection - These devices do not have an internal monolithic Zener diode from gate to emitter. If gate protection is required an external Zener is recommended. All Intersil semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certification. Intersil semiconductor products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time without notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries. For information regarding Intersil Corporation and its products, see web site www.intersil.com 7 ECCOSORBD™ is a Trademark of Emerson and Cumming, Inc.