S71WS-P 1.8 Volt-only Flash with CellularRAM Features Power supply voltage of 1.7 to 1.95V pSRAM burst frequency: 104 MHz Flash access time: 80 ns, 20 ns Package: – 8.0 × 11.6 mm MCP Flash burst frequencies: 80 MHz, 104 MHz Operating Temperature – –25 °C to +85 °C (wireless) pSRAM Access time: 70 ns, 20 ns The S71WS series is a product line of stacked packages and consists of: One S29WS256P NOR flash memory die CellularRAM die The products covered by this document are listed in the table below. CellularRAM Density (Mb) Device 64 Mb S29WS256P S71WS256PC0 Note: For a full list of OPNs, please contact the local sales representative or refer to the Ordering Information valid combinations tables. For detailed specifications, please refer to the individual data sheets. Document Cypress Document Number S29WS512/256/128P datasheet 002-01747 64M CellularRAM PN: SWM064D133S1R SWM064D133S1R Cypress Semiconductor Corporation Document Number: 001-98532 Rev. *B • 198 Champion Court • San Jose, CA 95134-1709 • 408-943-2600 Revised March 04, 2016 S71WS-P 1. Product Selector Guide Model Number Device S71WS256PC0HH3 YL S71WS256PC0HH3 YR Flash Density (Mb) CellularRAM Density (Mb) 256 64 Flash Speed (MHz) CellularRAM Speed (MHz) CellularRAM Supplier Package 104 SWM064D133S1R 84 ball MCP 8x11.6x1.2 mm 104 80 2. MCP Block Diagram A0-Amax A0-Amax AFlash AFlash RDY RDY CLK AVD# F-CE# OE# F-RST# F-ACC F-WP# F-WE# CLK AVD# CE# OE# RESET# ACC WP# WE# WS-P Flash Memory DQ0-DQ15 DQ0-DQ15 VSS VSS VCC VCCQ F-VCC F-VCCQ A0-Amax DQ0-DQ15 WAIT R-CE# R-LB# R-UB# R-CRE CLK AVD# CE# OE# LB# UB# WE# CRE pSRAM Memory VSS VCC VCCQ Document Number: 001-98532 Rev. *B R-VCC Page 2 of 10 S71WS-P 3. Connection Diagrams 1 2 3 4 5 6 7 8 9 10 A DNU DNU B AVD# VSS CLK RFU F-VCC RFU RFU RFU Legend C F-WP# A7 R-LB# F-ACC WE# A8 A11 RFU Reserved f Future Us D A3 A6 R-UB# F-RST# RFU A19 A12 A15 NOR Flash O E A2 A5 A18 RDY A20 A9 A13 A21 A1 A4 A17 RFU A23 A10 A14 A22 A0 VSS DQ1 RFU RFU DQ6 A24 A16 F-CE# OE# DQ9 DQ3 DQ4 DQ13 DQ15 R-CRE R-CE# DQ0 DQ10 F-VCC R-VCC DQ12 DQ7 VSS RFU DQ8 DQ2 DQ11 RFU DQ5 DQ14 RFU RFU RFU VSS F-VCC RFU RFU F-VCCQ DNU F pSRAM Only G Flash & pS Shared On H Do Not Us J K L M DNU DNU Note: 1. VCC pins must ramp simultaneously. 3.1 MCP Flash-only Addresses Shared Addresses S71WS256PC0 A23–A22 A21–A0 Special Handling Instructions For FBGA Package Special handling is required for Flash Memory products in FBGA packages. Flash memory devices in FBGA packages may be damaged if exposed to ultrasonic cleaning methods. The package and/or data integrity may be compromised if the package body is exposed to temperatures above 150°C for prolonged periods of time. 3.2 Look-ahead Ballout for Future Designs Please refer to the Design-in Scalable Wireless Solutions with Cypress Products application note (publication number: Design_Scalable_Wireless). Contact your local Cypress sales representative for more details. Document Number: 001-98532 Rev. *B Page 3 of 10 S71WS-P 3.3 NOR Flash and pSRAM Input/Output Descriptions Signal Amax-A0 DQ15-DQ0 F-CE# Description Flash pSRAM NOR Flash Address inputs X X Flash Data input/output X X NOR Flash Chip-enable input #1. Asynchronous relative to CLK for Burst Mode. X OE# Output Enable input. Asynchronous relative to CLK for Burst mode. X X WE# Write Enable input. X X F-VCC NOR Flash device power supply (1.7 V - 1.95 V). X Input/Output Buffer power supply. X VSS Ground X X RFU Reserved for Future Use. No device internal signal is currently connected to the package connector but there is potential future use for the connector for a signal. It is recommended to not use RFU connectors for PCB routing channels so that the PCB may take advantage of future enhanced features in compatible footprint devices. RDY Flash ready output. Indicates the status of the Burst read. VOL = data valid. The Flash RDY pin is shared with the WAIT pin of the pSRAM. X X CLK NOR Flash Clock, shared with CLK of burst-mode pSRAM.. The first rising edge of CLK in conjunction with AVD# low latches the address input and activates burst mode operation. After the initial word is output, subsequent rising edges of CLK increment the internal address counter. CLK should remain low during asynchronous access. X X NOR Flash Address Valid input. Shared with AVD# of burst-mode pSRAM. Indicates to device that the valid address is present on the address inputs. VIL = for asynchronous mode, indicates valid address; for burst mode, causes starting address to be latched on rising edge of CLK. VIH= device ignores address inputs X X F-RST# NOR Flash hardware reset input. VIL= device resets and returns to reading array data X F-WP# NOR Flash hardware write protect input. VIL = disables program and erase functions in the four outermost sectors. X F-ACC NOR Flash accelerated input. At VHH, accelerates programming; automatically places device in unlock bypass mode. At VIL, disables all program and erase functions. Should be at VIH for all other conditions. X F-VCCQ AVD# R-CE# Chip-enable input for pSRAM X R-CRE Control Register Enable (pSRAM). For CellularRAM only. X R-VCC pSRAM Power Supply X R-UB# Upper Byte Control (pSRAM) X R-LB# Lower Byte Control (pSRAM) X DNU Do Not Use. A device internal signal may be connected to the package connector. The connection may be used by Cypress for test or other purposes and is not intended for connection to any host system signal. Any DNU signal related function will be inactive when the signal is at VIL. The signal has an internal pull-down resistor and may be left unconnected in the host system or may be tied to VSS. Do not use these connections for PCB signal routing channels. Do not connect any host system signal to these connections. Note: Some customers prefer being able to tie DNU signals to VSS on the PCB. Document Number: 001-98532 Rev. *B Page 4 of 10 S71WS-P 4. Ordering Information The order number is formed by a valid combinations of the following: S71WS 256 P C0 H H 3 YL 0 PACKING TYPE 0 = Tray 2 = 7” Tape and Reel 3 = 13” Tape and Reel MODEL NUMBER Refer to Product Selector Guide on page 2 PACKAGE DESCRIPTOR 3 = 84-ball Fine-pitch BGA, 11.6 mm x 8 mm MATERIAL SET H = Low-Halogen, Pb-free PACKAGE TYPE H = 1.2 mm MCP FBGA CellularRAM DENSITY C0 = 64 Mb PROCESS TECHNOLOGY P = 90 nm, MirrorBit® Technology CODE FLASH DENSITY 256 = 256 Mb PRODUCT FAMILY S71WS Stacked Products (MCP) 1.8 V NOR Flash with pSRAM 4.1 Valid Combinations Valid Combinations list configurations planned to be supported in volume for this device. Consult your local sales office to confirm availability of specific valid combinations and to check on newly released combinations. Valid Combination Product Family Code Flash Denisty (Mb) Process Technology CellularRAM Density Package Type / Material Model Number Combo Packing Type S71WS 256 P C0 HH3 YL, YR 0, 2, 3 (Note 1) Notes: 1. Packing Type 0 is standard. Specify other options as required. 2. BGA package marking omits leading S and packing type designator from ordering part number. Document Number: 001-98532 Rev. *B Page 5 of 10 S71WS-P 5. 5.1 Physical Dimensions TLA084— 84-ball Fine Pitch Ball Grid Array (FBGA) 8 x 11.6 mm Package D1 A D eD 0.15 C (2X) 10 9 SE 7 8 7 6 E E1 5 4 eE 3 2 1 M L K J INDEX MARK PIN A1 CORNER B 10 TOP VIEW H G F E D C B A 7 SD 0.15 C PIN A1 CORNER (2X) BOTTOM VIEW 0.20 C A A2 A1 C 0.08 C SIDE VIEW 6 b 84X 0.15 0.08 M C A B M C NOTES: PACKAGE TLA 084 JEDEC N/A DxE 11.60 mm x 8.00 mm PACKAGE SYMBOL MIN NOM MAX A --- --- 1.20 A1 0.17 --- --- A2 0.81 --- 0.97 NOTE PROFILE BODY SIZE E 8.00 BSC. BODY SIZE D1 8.80 BSC. MATRIX FOOTPRINT E1 7.20 BSC. MATRIX FOOTPRINT MD 12 MATRIX SIZE D DIRECTION ME 10 MATRIX SIZE E DIRECTION 84 0.35 0.40 2. ALL DIMENSIONS ARE IN MILLIMETERS. 3. BALL POSITION DESIGNATION PER JESD 95-1, SPP-010. 4. e REPRESENTS THE SOLDER BALL GRID PITCH. 5. SYMBOL "MD" IS THE BALL MATRIX SIZE IN THE "D" DIRECTION. BALL HEIGHT 11.60 BSC. n DIMENSIONING AND TOLERANCING METHODS PER ASME Y14.5M-1994. SYMBOL "ME" IS THE BALL MATRIX SIZE IN THE "E" DIRECTION. BODY THICKNESS D Øb 1. n IS THE NUMBER OF POPULTED SOLDER BALL POSITIONS FOR MATRIX SIZE MD X ME. 6 DIMENSION "b" IS MEASURED AT THE MAXIMUM BALL DIAMETER IN A PLANE PARALLEL TO DATUM C. 7 SD AND SE ARE MEASURED WITH RESPECT TO DATUMS A AND B AND DEFINE THE POSITION OF THE CENTER SOLDER BALL IN THE OUTER ROW. BALL COUNT 0.45 eE 0.80 BSC. BALL PITCH eD 0.80 BSC BALL PITCH SD / SE 0.40 BSC. SOLDER BALL PLACEMENT A2,A3,A4,A5,A6,A7,A8,A9 DEPOPULATED SOLDER BALLS B1,B10,C1,C10,D1,D10, E1,E10,F1,F10,G1,G10, H1,H10,J1,J10,K1,K10,L1,L10, M2,M3,M4,M5,M6,M7,M8,M9 Document Number: 001-98532 Rev. *B WHEN THERE IS AN ODD NUMBER OF SOLDER BALLS IN THE OUTER ROW SD OR SE = 0.000. BALL DIAMETER WHEN THERE IS AN EVEN NUMBER OF SOLDER BALLS IN THE OUTER ROW, SD OR SE = e/2 8. "+" INDICATES THE THEORETICAL CENTER OF DEPOPULATED BALLS. 9. N/A 10 A1 CORNER TO BE IDENTIFIED BY CHAMFER, LASER OR INK MARK, METALLIZED MARK INDENTATION OR OTHER MEANS. 3372-2 \ 16-038.22a Page 6 of 10 S71WS-P 6. Revision History Spansion Publication Number: S71WS-P_00 Section Description Revision 01 (February 21, 2006 to August 17 2012) Initial Release Added the S71WS512PC0 Added the S71WS512PD0 108MHz OPN Added the S71WS256PD0 MCP Added the S71WS256PC0 MCP Added new CellularRAM Type 3 Revised Valid Combination table Revised Product Selector Guide Added S71WS128PC0 MCP offering Added the S71WS512PD0JF4 OPN Added the S71WS512PD0HF3SR OPN Added 80 MHz S71WS128PC0 to Valid Combinations Added 54 MHz and Asynchronous S71WS512PC0 MCP Revised Valid Combinations Add 104 MHz, 80 Mhz and 66 MHz S71WS256PC, S71WS256PD and S71WS128PC MCP products Removed the S71WS512PD0JF MCP Added package TSB084 Added OPNs S71WS128PB0HF3SR/SV Added low-Halogen options for S71WS128PB0, S71WS128PC0, S71WS256PC0, S71WS256PD0, and S71WS512PD0 Added 64M CellularRAM Type 2 Updated 128M CellularRAM Type 2 PID Removed 128M/64M CellularRAM Type 3 OPNs and PIDs Added CellularRAM Type 3 and associated OPNs Added CellularRAM PN: SWM128D104R1R and associated OPNs Changed Flash Page Access time to 20 ns In Features, changed max Flash burst frequency from 108 MHz to 104 MHz Removed OPNs S71WS512PD0HH3HL, S71WS256PD0HH3HL, S71WS256PD0HH3HR Added MCP OPNs S71WS256PC0HH3YR0/L0 and CellularRAM OPN SWM064D133S1R Added MCP OPNs S71WS128PB0HH3RL0/RR0/RV0 for new 32 Mb CellularRAM OPN SWM032D133S1R Removed all OPNs except S71WS512PD0HH3YL/YR/YV, S71WS256PC0HH3YR/YL and S71WS128PB0HH3RL/RR/RV Removed TSB084 drawing Removed all OPNs and corresponding references, except S71WS256PC0HH3YR/YL Document Number: 001-98532 Rev. *B Page 7 of 10 S71WS-P Document History Page Document Title: S71WS-P 1.8 Volt-only Flash with CellularRAM Document Number: 001-98532 Rev. ECN No. Orig. of Change Submission Date Description of Change ** – WIOB Initial Release Added the S71WS512PC0 Added the S71WS512PD0 108MHz OPN Added the S71WS256PD0 MCP Added the S71WS256PC0 MCP Added new CellularRAM Type 3 Revised Valid Combination table Revised Product Selector Guide Added S71WS128PC0 MCP offering Added the S71WS512PD0JF4 OPN Added the S71WS512PD0HF3SR OPN Added 80 MHz S71WS128PC0 to Valid Combinations Added 54 MHz and Asynchronous S71WS512PC0 MCP Revised Valid Combinations Add 104 MHz, 80 Mhz and 66 MHz S71WS256PC, S71WS256PD and S71WS128PC MCP products Removed the S71WS512PD0JF MCP Added package TSB084 02/21/2006 Added OPNs S71WS128PB0HF3SR/SV to 08/17/12 Added low-Halogen options for S71WS128PB0, S71WS128PC0, S71WS256PC0, S71WS256PD0, and S71WS512PD0 Added 64M CellularRAM Type 2 Updated 128M CellularRAM Type 2 PID Removed 128M/64M CellularRAM Type 3 OPNs and PIDs Added CellularRAM Type 3 and associated OPNs Added CellularRAM PN: SWM128D104R1R and associated OPNs Changed Flash Page Access time to 20 ns In Features, changed max Flash burst frequency from 108 MHz to 104 MHz Removed OPNs S71WS512PD0HH3HL, S71WS256PD0HH3HL, S71WS256PD0HH3HR Added MCP OPNs S71WS256PC0HH3YR0/L0 and CellularRAM OPN SWM064D133S1R Added MCP OPNs S71WS128PB0HH3RL0/RR0/RV0 for new 32 Mb CellularRAM OPN SWM032D133S1R Removed all OPNs except S71WS512PD0HH3YL/YR/YV, S71WS256PC0HH3YR/YL and S71WS128PB0HH3RL/RR/RV Removed TSB084 drawing Removed all OPNs and corresponding references, except S71WS256PC0HH3YR/YL *A 4965208 WIOB 10/15/2015 Updated to Cypress template. Document Number: 001-98532 Rev. *B Page 8 of 10 S71WS-P Document History Page (Continued) Document Title: S71WS-P 1.8 Volt-only Flash with CellularRAM Document Number: 001-98532 Rev. *B ECN No. 5162276 Orig. of Change PSR Submission Date Description of Change Updated Features on page 1: Replaced “S29WS-P” with “S29WS256P”. Updated table for detailed specifications: Replaced “S29WS-P” with “S29WS512/256/128P datasheet” in “Document” 03/04/2016 column. Replaced “Publication Identification Number (PID)” with “Cypress Document Number” in column heading and replaced “S29WS-P_00” with “002-01747” in the same column. Updated to new template. Document Number: 001-98532 Rev. *B Page 9 of 10 S71WS-P Sales, Solutions, and Legal Information Worldwide Sales and Design Support Cypress maintains a worldwide network of offices, solution centers, manufacturer’s representatives, and distributors. To find the office closest to you, visit us at Cypress Locations. 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