SEMiX202GB17E4s Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 25 °C Tj = 175 °C 1700 V Tc = 25 °C 321 A Tc = 80 °C 248 A 200 A ICnom ICRM SEMiX® 2s VGES tpsc Tj ICRM = 3xICnom VCC = 1000 V VGE ≤ 15 V VCES ≤ 1700 V Tj = 150 °C 600 A -20 ... 20 V 10 µs -40 ... 175 °C Inverse diode SEMiX202GB17E4s VRRM IF Tj = 25 °C Tj = 175 °C 1700 V Tc = 25 °C 213 A Tc = 80 °C 157 A 200 A IFnom Features • Homogeneous Si • Trench = Trenchgate technology • VCE(sat) with positive temperature coefficient • High short circuit capability • UL recognized, file no. E63532 Typical Applications* • AC inverter drives • UPS • Electronic Welding Remarks • Case temperature limited to TC=125°C max. • Product reliability results are valid for Tj=150°C • Dynamic values apply to the following combination of resistors: RGon,main = 1,0/1,9 Ω (Vcc=1200V/900V) RGoff,main = 1,0/1,9 Ω (Vcc=1200V/900V) RG,X = 2,2 Ω RE,X = 0,5 Ω IFRM IFRM = 2xIFnom 400 A IFSM tp = 10 ms, sin 180°, Tj = 25 °C 1170 A -40 ... 175 °C Tj Module It(RMS) Tstg Visol AC sinus 50Hz, t = 1 min 600 A -40 ... 125 °C 4000 V Characteristics Symbol IGBT VCE(sat) VCE0 rCE Conditions IC = 200 A VGE = 15 V chiplevel chiplevel VGE = 15 V chiplevel VGE(th) VGE=VCE, IC = 8 mA ICES VGE = 0 V VCE = 1700 V Cies Coes Cres VCE = 25 V VGE = 0 V min. typ. max. Unit Tj = 25 °C 1.90 2.20 V Tj = 150 °C 2.30 2.60 V Tj = 25 °C 0.8 0.9 V Tj = 150 °C 0.7 0.8 V Tj = 25 °C 5.5 6.5 mΩ Tj = 150 °C 8 9 mΩ 5.2 5.8 Tj = 25 °C 6.4 V 2.7 mA mA f = 1 MHz 18 nF f = 1 MHz 0.68 nF f = 1 MHz 0.58 nF QG VGE = - 8 V...+ 15 V 1600 nC RGint Tj = 25 °C VCC = 1200 V IC = 200 A VGE = +15/-15 V RG on = 2.4 Ω RG off = 2.4 Ω di/dton = 6300 A/µs di/dtoff = 1100 A/µs du/dt = 5100 V/µs Ls = 30 nH 3.75 Ω td(on) tr Eon td(off) tf Eoff Tj = 150 °C 300 ns Tj = 150 °C 38 ns Tj = 150 °C 75 mJ Tj = 150 °C 750 ns Tj = 150 °C 150 ns Tj = 150 °C 82 mJ GB © by SEMIKRON Rev. 2 – 20.02.2015 1 SEMiX202GB17E4s Characteristics Symbol td(on) tr Eon td(off) tf Eoff SEMiX® 2s Rth(j-c) Conditions VCC = 900 V IC = 200 A VGE = +15/-15 V RG on = 3.3 Ω RG off = 3.3 Ω di/dton = 3075 A/µs di/dtoff = 1000 A/µs du/dt = 4350 V/µs Ls = 80 nH per IGBT min. typ. max. Unit Tj = 150 °C 360 ns Tj = 150 °C 70 ns Tj = 150 °C 46 mJ Tj = 150 °C 840 ns Tj = 150 °C 170 ns Tj = 150 °C 68 mJ 0.122 K/W typ. max. Unit 2.00 2.40 V Characteristics Symbol SEMiX202GB17E4s Features • Homogeneous Si • Trench = Trenchgate technology • VCE(sat) with positive temperature coefficient • High short circuit capability • UL recognized, file no. E63532 Typical Applications* rF IRRM Qrr Err IRRM • AC inverter drives • UPS • Electronic Welding Qrr Remarks Rth(j-c) • Case temperature limited to TC=125°C max. • Product reliability results are valid for Tj=150°C • Dynamic values apply to the following combination of resistors: RGon,main = 1,0/1,9 Ω (Vcc=1200V/900V) RGoff,main = 1,0/1,9 Ω (Vcc=1200V/900V) RG,X = 2,2 Ω RE,X = 0,5 Ω Conditions Inverse diode VF = VEC IF = 200 A VGE = 0 V chiplevel VF0 chiplevel Err chiplevel IF = 200 A di/dtoff = 5600 A/µs VGE = -15 V VR = 1200 V IF = 200 A di/dtoff = 3000 A/µs VGE = -15 V VR = 900 V per diode min. Tj = 25 °C Tj = 150 °C 2.15 2.57 V 1.32 1.56 V 1.08 1.22 V 3.4 4.2 mΩ Tj = 150 °C 5.4 6.8 mΩ Tj = 150 °C 290 Tj = 150 °C 73 µC Tj = 150 °C 55 mJ Tj = 25 °C 1.16 Tj = 150 °C Tj = 25 °C 2.7 A Tj = 150 °C 230 A Tj = 150 °C 70 µC Tj = 150 °C 45 mJ 0.276 K/W Module LCE RCC'+EE' 18 res. terminal-chip Rth(c-s) per module Ms to heat sink (M5) TC = 25 °C 0.7 mΩ TC = 125 °C 1 mΩ 0.045 to terminals (M6) Mt nH K/W 3 5 2.5 5 Nm Nm Nm w 250 g Temperature Sensor R100 B100/125 Tc=100°C (R25=5 kΩ) R(T)=R100exp[B100/125(1/T-1/T100)]; T[K]; 493 ± 5% Ω 3550 ±2% K GB 2 Rev. 2 – 20.02.2015 © by SEMIKRON SEMiX202GB17E4s Fig. 1: Typ. output characteristic, inclusive RCC'+ EE' Fig. 2: Rated current vs. temperature IC = f (TC) Fig. 3: Typ. turn-on /-off energy = f (IC) Fig. 4: Typ. turn-on /-off energy = f (RG) Fig. 5: Typ. transfer characteristic Fig. 6: Typ. gate charge characteristic © by SEMIKRON Rev. 2 – 20.02.2015 3 SEMiX202GB17E4s Fig. 7: Typ. switching times vs. IC Fig. 8: Typ. switching times vs. gate resistor RG Fig. 9: Typ. transient thermal impedance Fig. 10: Typ. CAL diode forward charact., incl. RCC'+ EE' Fig. 11: Typ. CAL diode peak reverse recovery current Fig. 12: Typ. CAL diode recovery charge 4 Rev. 2 – 20.02.2015 © by SEMIKRON SEMiX202GB17E4s SEMiX 2s spring configuration This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX * The specifications of our components may not be considered as an assurance of component characteristics. Components have to be tested for the respective application. Adjustments may be necessary. The use of SEMIKRON products in life support appliances and systems is subject to prior specification and written approval by SEMIKRON. We therefore strongly recommend prior consultation of our staff. © by SEMIKRON Rev. 2 – 20.02.2015 5