SEMiX453GAL17E4s Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 25 °C Tj = 175 °C 1700 V Tc = 25 °C 762 A Tc = 80 °C 579 A 450 A ICnom ICRM SEMiX® 3s VGES tpsc Tj ICRM = 3xICnom VCC = 1000 V VGE ≤ 15 V VCES ≤ 1700 V Tj = 150 °C 1350 A -20 ... 20 V 10 µs -40 ... 175 °C Inverse diode SEMiX453GAL17E4s VRRM IF Tj = 25 °C Tj = 175 °C 1700 V Tc = 25 °C 482 A Tc = 80 °C 354 A 450 A IFnom Features • Homogeneous Si • Trench = Trenchgate technology • VCE(sat) with positive temperature coefficient • High short circuit capability • UL recognized, file no. E63532 Typical Applications* IFRM IFRM = 2xIFnom 900 A IFSM tp = 10 ms, sin 180°, Tj = 25 °C 2565 A -40 ... 175 °C Tj Freewheeling diode VRRM • AC inverter drives • UPS • Electronic Welding IFnom Remarks Tj • Case temperature limited to TC=125°C max. • Product reliability results are valid for Tj=150°C • Dynamic values apply to the following combination of resistors: RGon,main = 2,4 Ω RGoff,main = 2,4 Ω RG,X = 2,2 Ω RE,X = 0,5 Ω Tj = 25 °C IF 1700 V Tc = 25 °C 482 A Tc = 80 °C 354 A 450 A IFRM IFRM = 2xIFnom 900 A IFSM tp = 10 ms, sin 180°, Tj = 25 °C 2565 A -40 ... 175 °C Module It(RMS) Tstg Visol AC sinus 50Hz, t = 1 min 600 A -40 ... 125 °C 4000 V Characteristics Symbol IGBT VCE(sat) VCE0 Conditions IC = 450 A VGE = 15 V chiplevel chiplevel min. typ. max. Unit Tj = 25 °C 1.90 2.20 V Tj = 150 °C 2.26 2.45 V Tj = 25 °C 1.1 1.2 V Tj = 150 °C 1 1.1 V Tj = 25 °C 1.8 2.2 mΩ 2.8 3 mΩ 5.8 6.4 V 5 mA rCE VGE = 15 V chiplevel VGE(th) VGE=VCE, IC = 18 mA ICES VGE = 0 V VCE = 1700 V Cies Coes Cres VCE = 25 V VGE = 0 V Tj = 150 °C 5.2 Tj = 25 °C mA f = 1 MHz 36 nF f = 1 MHz 1.50 nF f = 1 MHz 1.14 nF QG VGE = - 8 V...+ 15 V 3600 nC RGint Tj = 25 °C 1.67 Ω GAL © by SEMIKRON Rev. 2 – 20.02.2015 1 SEMiX453GAL17E4s Characteristics Symbol IGBT td(on) tr Eon td(off) tf SEMiX® 3s Eoff td(on) tr Eon SEMiX453GAL17E4s td(off) tf Eoff Features • Homogeneous Si • Trench = Trenchgate technology • VCE(sat) with positive temperature coefficient • High short circuit capability • UL recognized, file no. E63532 Typical Applications* • AC inverter drives • UPS • Electronic Welding Rth(j-c) • Case temperature limited to TC=125°C max. • Product reliability results are valid for Tj=150°C • Dynamic values apply to the following combination of resistors: RGon,main = 2,4 Ω RGoff,main = 2,4 Ω RG,X = 2,2 Ω RE,X = 0,5 Ω VCC = 1200 V IC = 450 A VGE = +15/-15 V RG on = 3.3 Ω RG off = 3.3 Ω di/dton = 7000 A/µs di/dtoff = 2220 A/µs du/dt = 5160 V/µs Ls = 30 nH VCC = 900 V IC = 450 A VGE = +15/-15 V RG on = 3.3 Ω RG off = 3.3 Ω di/dton = 4000 A/µs di/dtoff = 2050 A/µs du/dt = 4600 V/µs Ls = 80 nH per IGBT min. typ. max. Unit Tj = 150 °C 455 ns Tj = 150 °C 65 ns Tj = 150 °C 250 mJ Tj = 150 °C 960 ns Tj = 150 °C 170 ns Tj = 150 °C 190 mJ Tj = 150 °C 490 ns Tj = 150 °C 120 ns Tj = 150 °C 118 mJ Tj = 150 °C 900 ns Tj = 150 °C 200 ns Tj = 150 °C 154 mJ 0.056 K/W typ. max. Unit Tj = 25 °C 1.98 2.37 V Tj = 150 °C 2.11 2.52 V 1.32 1.56 V 1.08 1.22 V 1.5 1.8 mΩ Tj = 150 °C 2.3 2.9 mΩ Characteristics Symbol Conditions Inverse diode VF = VEC IF = 450 A VGE = 0 V chiplevel VF0 chiplevel rF Remarks Conditions IRRM Qrr Err IRRM Qrr Err Rth(j-c) chiplevel IF = 450 A di/dtoff = 6240 A/µs VGE = -15 V VR = 1200 V IF = 450 A di/dtoff = 3700 A/µs VGE = -15 V VR = 900 V per diode Freewheeling diode VF = VEC IF = 450 A VGE = 0 V chiplevel VF0 chiplevel rF IRRM Qrr Err IRRM Qrr Err Rth(j-c) chiplevel IF = 450 A di/dtoff = 6240 A/µs VGE = -15 V VR = 1200 V IF = 450 A di/dtoff = 3700 A/µs VGE = -15 V VR = 900 V per diode min. Tj = 25 °C 1.16 Tj = 150 °C Tj = 25 °C 1.2 Tj = 150 °C 440 A Tj = 150 °C 150 µC Tj = 150 °C 100 mJ Tj = 150 °C 400 A Tj = 150 °C 150 µC Tj = 150 °C 87 mJ Tj = 25 °C 1.98 Tj = 150 °C 0.125 K/W 2.37 V 2.11 2.52 V 1.32 1.56 V 1.08 1.22 V 1.5 1.8 mΩ Tj = 150 °C 2.3 2.9 mΩ Tj = 150 °C 440 Tj = 150 °C 150 µC Tj = 150 °C 100 mJ Tj = 25 °C 1.16 Tj = 150 °C Tj = 25 °C 1.2 A Tj = 150 °C 400 A Tj = 150 °C 150 µC Tj = 150 °C 87 mJ 0.125 K/W GAL 2 Rev. 2 – 20.02.2015 © by SEMIKRON SEMiX453GAL17E4s Characteristics Symbol Conditions min. typ. max. Unit Module LCE RCC'+EE' SEMiX® 3s res. terminal-chip Rth(c-s) per module Ms to heat sink (M5) TC = 25 °C TC = 150 °C to terminals (M6) Mt 20 nH 0.85 mΩ 1.2 mΩ 0.04 K/W 3 5 2.5 5 Nm Nm Nm w 300 g Temperature Sensor R100 SEMiX453GAL17E4s B100/125 Tc=100°C (R25=5 kΩ) R(T)=R100exp[B100/125(1/T-1/T100)]; T[K]; 493 ± 5% Ω 3550 ±2% K Features • Homogeneous Si • Trench = Trenchgate technology • VCE(sat) with positive temperature coefficient • High short circuit capability • UL recognized, file no. E63532 Typical Applications* • AC inverter drives • UPS • Electronic Welding Remarks • Case temperature limited to TC=125°C max. • Product reliability results are valid for Tj=150°C • Dynamic values apply to the following combination of resistors: RGon,main = 2,4 Ω RGoff,main = 2,4 Ω RG,X = 2,2 Ω RE,X = 0,5 Ω GAL © by SEMIKRON Rev. 2 – 20.02.2015 3 SEMiX453GAL17E4s Fig. 1: Typ. output characteristic, inclusive RCC'+ EE' Fig. 2: Rated current vs. temperature IC = f (TC) Fig. 3: Typ. turn-on /-off energy = f (IC) Fig. 4: Typ. turn-on /-off energy = f (RG) Fig. 5: Typ. transfer characteristic Fig. 6: Typ. gate charge characteristic 4 Rev. 2 – 20.02.2015 © by SEMIKRON SEMiX453GAL17E4s Fig. 7: Typ. switching times vs. IC Fig. 8: Typ. switching times vs. gate resistor RG Fig. 9: Typ. transient thermal impedance Fig. 10: Typ. CAL diode forward charact., incl. RCC'+ EE' Fig. 11: Typ. CAL diode peak reverse recovery current Fig. 12: Typ. CAL diode recovery charge © by SEMIKRON Rev. 2 – 20.02.2015 5 SEMiX453GAL17E4s SEMiX 3s spring configuration This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX * The specifications of our components may not be considered as an assurance of component characteristics. Components have to be tested for the respective application. Adjustments may be necessary. The use of SEMIKRON products in life support appliances and systems is subject to prior specification and written approval by SEMIKRON. We therefore strongly recommend prior consultation of our staff. 6 Rev. 2 – 20.02.2015 © by SEMIKRON