SEMiX604GB17E4s Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 25 °C Tj = 175 °C 1700 V Tc = 25 °C 1015 A Tc = 80 °C 772 A 600 A ICnom ICRM SEMiX® 4s VGES tpsc Tj ICRM = 3xICnom VCC = 1000 V VGE ≤ 15 V VCES ≤ 1700 V Tj = 150 °C 1800 A -20 ... 20 V 10 µs -40 ... 175 °C Inverse diode SEMiX604GB17E4s VRRM IF Tj = 25 °C Tj = 175 °C 1700 V Tc = 25 °C 629 A Tc = 80 °C 463 A IFnom Features • Homogeneous Si • Trench = Trenchgate technology • VCE(sat) with positive temperature coefficient • High short circuit capability • UL recognized, file no. E63532 Typical Applications* • AC inverter drives • UPS • Electronic Welding Remarks • Case temperature limited to TC=125°C max. • Product reliability results are valid for Tj=150°C • Dynamic values apply to the following combination of resistors: RGon,main = 1,3/0,3 Ω (Vcc=1200V/900V) RGoff,main = 1,3/0,3 Ω (Vcc=1200V/900V) RG,X = 2,2 Ω RE,X = 0,5 Ω IFRM IFRM = 2xIFnom IFSM tp = 10 ms, sin 180°, Tj = 25 °C Tj 600 A 1200 A 3420 A -40 ... 175 °C Module It(RMS) Tstg Visol AC sinus 50Hz, t = 1 min 600 A -40 ... 125 °C 4000 V Characteristics Symbol IGBT VCE(sat) VCE0 rCE Conditions IC = 600 A VGE = 15 V chiplevel chiplevel VGE = 15 V chiplevel min. typ. max. Unit Tj = 25 °C 1.90 2.20 V Tj = 150 °C 2.26 2.45 V Tj = 25 °C 1.1 1.2 V Tj = 150 °C 1 1.1 V Tj = 25 °C 1.3 1.7 mΩ Tj = 150 °C 2.1 2.3 mΩ 5.8 6.4 V 5 mA VGE(th) VGE=VCE, IC = 24 mA ICES VGE = 0 V VCE = 1700 V Cies Coes Cres VCE = 25 V VGE = 0 V 5.2 Tj = 25 °C mA f = 1 MHz 48 nF f = 1 MHz 2.00 nF f = 1 MHz 1.52 nF QG VGE = - 8 V...+ 15 V 4800 nC RGint Tj = 25 °C VCC = 1200 V IC = 600 A VGE = +15/-15 V RG on = 2 Ω RG off = 2 Ω di/dton = 9930 A/µs di/dtoff = 2750 A/µs du/dt = 5150 V/µs Ls = 30 nH 1.25 Ω td(on) tr Eon td(off) tf Eoff Tj = 150 °C 390 ns Tj = 150 °C 60 ns Tj = 150 °C 255 mJ Tj = 150 °C 920 ns Tj = 150 °C 180 ns Tj = 150 °C 255 mJ GB © by SEMIKRON Rev. 2 – 20.02.2015 1 SEMiX604GB17E4s Characteristics Symbol td(on) tr Eon td(off) tf Eoff SEMiX® 4s Rth(j-c) Conditions VCC = 900 V IC = 600 A VGE = +15/-15 V RG on = 1 Ω RG off = 1 Ω di/dton = 6500 A/µs di/dtoff = 2300 A/µs du/dt = 4300 V/µs Ls = 80 nH per IGBT min. typ. max. Unit Tj = 150 °C 330 ns Tj = 150 °C 90 ns Tj = 150 °C 49 mJ Tj = 150 °C 800 ns Tj = 150 °C 230 ns Tj = 150 °C 213 mJ 0.042 K/W typ. max. Unit 1.98 2.37 V Characteristics Symbol SEMiX604GB17E4s Features • Homogeneous Si • Trench = Trenchgate technology • VCE(sat) with positive temperature coefficient • High short circuit capability • UL recognized, file no. E63532 Typical Applications* • AC inverter drives • UPS • Electronic Welding rF IRRM Qrr Err IRRM Qrr Err Rth(j-c) Remarks • Case temperature limited to TC=125°C max. • Product reliability results are valid for Tj=150°C • Dynamic values apply to the following combination of resistors: RGon,main = 1,3/0,3 Ω (Vcc=1200V/900V) RGoff,main = 1,3/0,3 Ω (Vcc=1200V/900V) RG,X = 2,2 Ω RE,X = 0,5 Ω Conditions Inverse diode VF = VEC IF = 600 A VGE = 0 V chiplevel VF0 chiplevel chiplevel IF = 600 A di/dtoff = 7700 A/µs VGE = -15 V VR = 1200 V IF = 600 A di/dtoff = 6100 A/µs VGE = -15 V VR = 900 V per diode min. Tj = 25 °C Tj = 150 °C 2.11 2.52 V 1.32 1.56 V 1.08 1.22 V 1.1 1.3 mΩ Tj = 150 °C 1.7 2.2 mΩ Tj = 150 °C 560 Tj = 150 °C 210 µC Tj = 150 °C 150 mJ Tj = 25 °C 1.16 Tj = 150 °C Tj = 25 °C 0.9 A Tj = 150 °C 660 A Tj = 150 °C 208 µC Tj = 150 °C 155 mJ 0.095 K/W Module LCE RCC'+EE' res. terminal-chip Rth(c-s) per module Ms to heat sink (M5) 22 nH TC = 25 °C 0.95 mΩ TC = 125 °C 1.4 mΩ 0.03 K/W to terminals (M6) Mt 3 5 2.5 5 Nm Nm Nm w 400 g Temperature Sensor R100 B100/125 Tc=100°C (R25=5 kΩ) R(T)=R100exp[B100/125(1/T-1/T100)]; T[K]; 493 ± 5% Ω 3550 ±2% K GB 2 Rev. 2 – 20.02.2015 © by SEMIKRON SEMiX604GB17E4s Fig. 1: Typ. output characteristic, inclusive RCC'+ EE' Fig. 2: Rated current vs. temperature IC = f (TC) Fig. 3: Typ. turn-on /-off energy = f (IC) Fig. 4: Typ. turn-on /-off energy = f (RG) Fig. 5: Typ. transfer characteristic Fig. 6: Typ. gate charge characteristic © by SEMIKRON Rev. 2 – 20.02.2015 3 SEMiX604GB17E4s Fig. 7: Typ. switching times vs. IC Fig. 8: Typ. switching times vs. gate resistor RG Fig. 9: Typ. transient thermal impedance Fig. 10: Typ. CAL diode forward charact., incl. RCC'+ EE' Fig. 11: Typ. CAL diode peak reverse recovery current Fig. 12: Typ. CAL diode recovery charge 4 Rev. 2 – 20.02.2015 © by SEMIKRON SEMiX604GB17E4s SEMiX 4s spring configuration This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX * The specifications of our components may not be considered as an assurance of component characteristics. Components have to be tested for the respective application. Adjustments may be necessary. The use of SEMIKRON products in life support appliances and systems is subject to prior specification and written approval by SEMIKRON. We therefore strongly recommend prior consultation of our staff. © by SEMIKRON Rev. 2 – 20.02.2015 5