Datasheet

AOT292L/AOB292L/AOTF292L
100V N-Channel AlphaSGT
General Description
Product Summary
• Trench Power AlphaSGTTM technology
• Low RDS(ON)
• RoHS and Halogen Free Compliant
VDS
Applications
TM
ID (at VGS=10V)
100V
105A
RDS(ON) (at VGS=10V)
< 4.5mΩ
(< 4.1mΩ )
RDS(ON) (at VGS=6V)
< 5.3mΩ
(< 4.9mΩ ∗)
∗
100% UIS Tested
100% Rg Tested
• Synchronous Rectification for power supply
• Ideal for boost converters
Top View
TO-220
TO-263
TO-220F
D
D
G
G
AOT292L
D S
G
AOTF292L
D
S
S
AOB292L
S
G
Orderable Part Number
Package Type
Form
Minimum Order Quantity
AOT292L
AOTF292L
AOB292L
TO-220
TO-220F
TO-263
Tube
Tube
Tape & Reel
1000
1000
800
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Drain-Source Voltage
Symbol
VDS
Gate-Source Voltage
Avalanche Current
C
Avalanche energy
L=0.1mH
VDS Spike
C
10µs
TC=25°C
Power Dissipation
B
Power Dissipation
A
50
Junction and Storage Temperature Range
60
A
EAS
180
mJ
120
Steady-State
Steady-State
47
150
23
2.1
-55 to 175
AOT(B)292L
°C
AOTF292L
15
60
0.5
W
W
1.3
RθJA
RθJC
V
300
TJ, TSTG
Symbol
t ≤ 10s
A
11.5
PDSM
TA=70°C
Thermal Characteristics
Parameter
A
Maximum Junction-to-Ambient
AD
Maximum Junction-to-Ambient
Maximum Junction-to-Case
14.5
IAS
PD
TA=25°C
A
420
VSPIKE
TC=100°C
V
82
IDSM
TA=70°C
Units
V
70
IDM
TA=25°C
Continuous Drain
Current
±20
105
ID
TC=100°C
C
AOTF292L
100
VGS
TC=25°C
Continuous Drain
Current G**
Pulsed Drain Current
AOT(B)292L
3.2
Units
°C/W
°C/W
°C/W
* Surface mount package TO263
** Package limited for TO220 & TO263
Rev.2.0: March 2016
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Page 1 of 7
AOT292L/AOB292L/AOTF292L
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
Conditions
Min
ID=250µA, VGS=0V
100
Zero Gate Voltage Drain Current
IGSS
VGS(th)
Gate-Body leakage current
VDS=0V, VGS=±20V
Gate Threshold Voltage
VDS=VGS, ID=250µA
1
TJ=55°C
±100
nA
2.8
3.4
V
3.7
4.5
6.1
7.4
VGS=6V, ID=20A
TO220/TO220F
4.2
5.3
mΩ
VGS=10V, ID=20A
TO263
3.3
4.1
mΩ
3.8
90
4.9
mΩ
S
0.68
1
V
105
A
50
A
TO220/TO220F
gFS
Forward Transconductance
VGS=6V, ID=20A
TO263
VDS=5V, ID=20A
VSD
Diode Forward Voltage
IS=1A, VGS=0V
IS
2.3
Maximum Body-Diode Continuous Current(TO220/TO263)
TJ=125°C
G
Maximum Body-Diode Continuous Current(TO220F)
DYNAMIC PARAMETERS
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Rg
Gate resistance
Units
µA
5
VGS=10V, ID=20A
Static Drain-Source On-Resistance
Max
V
VDS=100V, VGS=0V
IDSS
RDS(ON)
Typ
VGS=0V, VDS=50V, f=1MHz
mΩ
6775
pF
557
pF
32
1.2
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge
90
126
nC
Qg(4.5V) Total Gate Charge
40
60
nC
VGS=10V, VDS=50V, ID=20A
0.4
pF
0.8
f=1MHz
Ω
Qgs
Gate Source Charge
24
nC
Qgd
Gate Drain Charge
13.5
nC
tD(on)
Turn-On DelayTime
20
ns
tr
Turn-On Rise Time
tD(off)
Turn-Off DelayTime
tf
trr
Turn-Off Fall Time
IF=20A, di/dt=500A/µs
Qrr
Body Diode Reverse Recovery Charge IF=20A, di/dt=500A/µs
380
Body Diode Reverse Recovery Time
VGS=10V, VDS=50V, RL=2.5Ω,
RGEN=3Ω
11.5
ns
48
ns
10
ns
50
ns
nC
A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The
Power dissipation PDSM is based on R θJA t≤ 10s and the maximum allowed junction temperature of 150°C. The value in any given application
depends on the user's specific board design, and the maximum temperature of 175°C may be used if the PCB allows it.
B. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Single pulse width limited by junction temperature TJ(MAX)=175°C.
D. The RθJA is the sum of the thermal impedance from junction to case RθJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming
a maximum junction temperature of TJ(MAX)=175°C. The SOA curve provides a single pulse rating.
G. The maximum current rating is package limited.
H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C.
APPLICATIONS OR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT
ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE
PRODUCT DESIGN,FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev.2.0: March 2016
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Page 2 of 7
AOT292L/AOB292L/AOTF292L
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
100
100
10V
6V
VDS=5V
4.5V
80
60
60
ID (A)
ID (A)
80
40
40
4V
25°C
125°C
20
20
VGS=3.5V
0
0
0
1
2
3
4
0
5
VDS (Volts)
Figure 1: On-Region Characteristics (Note E)
2
3
4
5
6
VGS (Volts)
Figure 2: Transfer Characteristics (Note E)
8
Normalized On-Resistance
2.2
6
RDS(ON) (mΩ)
1
VGS=6V
4
VGS=10V
2
2
VGS=10V
ID=20A
1.8
1.6
1.4
VGS=6V
ID=20A
1.2
1
0.8
0
0
5
10
15
20
25
0
30
25
50
75
100
125
150
175
200
Temperature (°C)
Figure 4: On-Resistance vs. Junction Temperature
(Note E)
ID (A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage (Note E)
12
1.0E+02
ID=20A
1.0E+01
1.0E+00
8
125°C
125°C
IS (A)
RDS(ON) (mΩ)
10
6
1.0E-01
1.0E-02
25°C
4
1.0E-03
25°C
2
1.0E-04
0
1.0E-05
2
4
6
8
10
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note E)
Rev.2.0: March 2016
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0.0
0.2
0.4
0.6
0.8
1.0
VSD (Volts)
Figure 6: Body-Diode Characteristics
(Note E)
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AOT292L/AOB292L/AOTF292L
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
9000
VDS=50V
ID=20A
Capacitance (pF)
VGS (Volts)
Ciss
7500
8
6
4
2
6000
4500
3000
1500
Coss
Crss
0
0
0
20
40
60
80
100
0
Qg (nC)
Figure 7: Gate-Charge Characteristics
100
800
100µs
DC
1ms
10ms
1.0
Power (W)
ID (Amps)
80
TJ(Max)=175°C
TC=25°C
10µs
10µs
RDS(ON)
limited
TJ(Max)=175°C
TC=25°C
0.1
0.0
0.01
600
400
200
0
0.0001
0.1
1
10
100
1000
VDS (Volts)
VGS> or equal to 6V
Figure 9A: Maximum Forward Biased Safe
Operating Area for TO220 & TO263 (Note F)
0.001
0.01
0.1
1
10
Pulse Width (s)
Figure 10A: Single Pulse Power Rating Junction-toCase for TO220 & TO263 (Note F)
1000.0
1000
1ms
DC
1.0
0.0
0.01
800
100µs
10.0
0.1
TJ(Max)=175°C
TC=25°C
10µs
RDS(ON)
limited
TJ(Max)=175°C
TC=25°C
0.1
10ms
100ms
1s
600
400
200
1
10
100
1000
VDS (Volts)
VGS> or equal to 6V
Figure 9B: Maximum Forward Biased Safe
Operating Area for TO220F (Note F)
Rev.2.0: March 2016
Power (W)
ID (Amps)
60
1000
10.0
100.0
40
VDS (Volts)
Figure 8: Capacitance Characteristics
1000.0
100.0
20
0
0.0001
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0.001
0.01
0.1
1
10
100
Pulse Width (s)
Figure 10B: Single Pulse Power Rating Junction-toCase for TO220F (Note F)
Page 4 of 7
AOT292L/AOB292L/AOTF292L
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
350
120
Power Dissipation (W)
300
100
Current rating ID (A)
250
200
150
100
80
60
40
20
50
0
0
0
25
50
75
100
125
150
175
0
50
100
40
80
30
20
10
50
75
100
125
150
175
TCASE (°C)
Figure 12A: Current De-rating for TO220 & TO263
(Note F)
Current rating ID (A)
Power Dissipation (W)
TCASE (°C)
Figure 11A: Power De-rating for TO220 & TO263 (Note
F)
25
0
60
40
20
0
0
25
50
75
100
125
150
175
0
TCASE (°C)
Figure 11B: Power De-rating for TO220F (Note F)
25
50
75
100
125
150
175
TCASE (°C)
Figure 12B: Current De-rating for TO220F
(Note F)
100000
TA=25°C
Power (W)
10000
1000
100
10
1
1E-05
0.001
0.1
10
1000
Pulse Width (s)
Figure 13: Single Pulse Power Rating Junction-to-Ambient (Note H)
Rev.2.0: March 2016
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Page 5 of 7
AOT292L/AOB292L/AOTF292L
ZθJA Normalized Transient
Thermal Resistance
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
1
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
RθJA=60°C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
0.1
PDM
0.01
Single Pulse
0.001
0.0001
0.001
0.01
0.1
Ton
1
T
10
100
1000
Pulse Width (s)
Figure 14: Normalized Maximum Transient Thermal Impedance (Note H)
ZθJC Normalized Transient
Thermal Resistance
10
D=Ton/T
TJ,PK=TC+PDM.ZθJC.RθJC
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
RθJC=0.5°C/W
1
0.1
PDM
Single Pulse
Ton
T
0.01
1E-05
0.0001
0.001
0.01
0.1
1
10
Pulse Width (s)
Figure 15A: Normalized Maximum Transient Thermal Impedance for TO220 & TO263 (Note F)
ZθJC Normalized Transient
Thermal Resistance
10
D=Ton/T
TJ,PK=TC+PDM.ZθJC.RθJC
1
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
RθJC=3.2°C/W
0.1
PDM
Single Pulse
0.01
Ton
T
0.001
1E-05
0.0001
0.001
0.01
0.1
1
10
100
Pulse Width (s)
Figure 15B: Normalized Maximum Transient Thermal Impedance for TO220F (Note F)
Rev.2.0: March 2016
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Page 6 of 7
AOT292L/AOB292L/AOTF292L
Figure
A: Charge
Gate Charge
Test Circuit
& Waveforms
Gate
Test Circuit
& Waveform
Vgs
Qg
10V
+
+ Vds
VDC
-
Qgs
Qgd
VDC
-
DUT
Vgs
Ig
Charge
Figure B: Resistive Switching Test Circuit & Waveforms
Resistive Switching Test Circuit & Waveforms
RL
Vds
Vds
Vgs
90%
+ Vdd
DUT
VDC
-
Rg
10%
Vgs
Vgs
td(on)
tr
td(off)
ton
tf
toff
Figure C:
UnclampedInductive
InductiveSwitching
Switching (UIS) Test
Unclamped
TestCircuit
Circuit&&Waveforms
Waveforms
L
2
EAR= 1/2 LIAR
Vds
BVDSS
Vds
Id
+ Vdd
Vgs
Vgs
I AR
VDC
-
Rg
Id
DUT
Vgs
Vgs
Figure
D: Recovery
Diode Recovery
Test Circuit
& Waveforms
Diode
Test Circuit
& Waveforms
Q rr = - Idt
Vds +
DUT
Vds -
Isd
Vgs
Ig
Rev.2.0: March 2016
Vgs
L
Isd
+ Vdd
t rr
dI/dt
I RM
Vdd
VDC
-
IF
Vds
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Page 7 of 7