AOT2906/AOB2906 100V N-Channel AlphaSGT TM General Description Product Summary VDS • Trench Power AlphaSGTTM technology • Low RDS(ON) • Low Gate Charger • Optimized fast-switching applications Applications ID (at VGS=10V) 100V 122A RDS(ON) (at VGS=10V) < 6.2mΩ < 5.9mΩ∗ RDS(ON) (at VGS=8V) < 7.2mΩ < 6.9mΩ∗ 100% UIS Tested 100% Rg Tested • Synchronous Rectifiers in DC/DC and AC/DC Converters • Industrial and Motor Drive applications TO-263 D2PAK TO220 Top View Bottom View D Top View Bottom View D D D D G G D S S AOT2906 D G G S S G S AOB2906 Orderable Part Number Package Type Form Minimum Order Quantity AOT2906 AOB2906 TO-220 TO-263 Tube Tape & Reel 1000 800 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Drain-Source Voltage Symbol VDS Gate-Source Voltage VGS TC=25°C Continuous Drain Current Pulsed Drain Current C Avalanche Current C Avalanche energy L=0.1mH VDS Spike 10µs TC=25°C Power Dissipation B TC=100°C C TA=25°C Power Dissipation A TA=70°C Junction and Storage Temperature Range Thermal Characteristics Parameter t ≤ 10s Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Steady-State Steady-State Maximum Junction-to-Case * Surface mount package TO263(AOB2906) Rev.2.0: May 2016 V A 90 25.5 IDSM TA=70°C ±20 310 IDM TA=25°C Continuous Drain Current Units V 122 ID TC=100°C Maximum 100 A 20.5 IAS 33 A EAS 54 mJ VSPIKE 120 V 187 PD W 94 8.3 PDSM TJ, TSTG Symbol RθJA RθJC W 5.3 -55 to 175 Typ 12 50 0.62 www.aosmd.com °C Max 15 60 0.8 Units °C/W °C/W °C/W Page 1 of 6 AOT2906/AOB2906 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage Conditions Min ID=250µA, VGS=0V 100 Zero Gate Voltage Drain Current IGSS VGS(th) Gate-Body leakage current VDS=0V, VGS=±20V Gate Threshold Voltage VDS=VGS, ID=250µA Static Drain-Source On-Resistance 1 TJ=55°C VGS=10V, ID=20A ±100 nA 2.9 3.5 V TO-220 5.1 6.2 TJ=125°C 8.2 10 2.3 VGS=8V, ID=20A TO-220 5.5 7.2 mΩ TO-263 4.8 5.9 mΩ VGS=8V, ID=20A TO-263 5.2 6.9 mΩ 1 V 118 A VDS=5V, ID=20A 60 VSD Diode Forward Voltage IS=1A, VGS=0V 0.69 IS Maximum Body-Diode Continuous Current DYNAMIC PARAMETERS Ciss Input Capacitance Output Capacitance Reverse Transfer Capacitance Rg Gate resistance VGS=0V, VDS=50V, f=1MHz Gate Source Charge Qgd Gate Drain Charge tD(on) Turn-On DelayTime tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf trr Turn-Off Fall Time Qrr S 2685 pF 1465 pF 52 f=1MHz SWITCHING PARAMETERS Total Gate Charge Qg(10V) Qgs mΩ VGS=10V, ID=20A Forward Transconductance Crss Units µA 5 gFS Coss Max V VDS=100V, VGS=0V IDSS RDS(ON) Typ VGS=10V, VDS=50V, ID=20A VGS=10V, VDS=50V, RL=2.5Ω, RGEN=3Ω 0.6 pF 1.2 1.8 Ω 44 65 nC 10 nC 12 nC 14 ns 18 ns 32 ns 22 ns IF=20A, di/dt=500A/µs 43 Body Diode Reverse Recovery Charge IF=20A, di/dt=500A/µs 215 ns nC Body Diode Reverse Recovery Time A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The Power dissipation PDSM is based on R θJA t≤ 10s and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user's specific board design, and the maximum temperature of 175°C may be used if the PCB allows it. B. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Single pulse width limited by junction temperature TJ(MAX)=175°C. D. The RθJA is the sum of the thermal impedance from junction to case RθJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of TJ(MAX)=175°C. The SOA curve provides a single pulse rating. G. The maximum current rating is package limited. H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. APPLICATIONS OR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Rev.2.0: May 2016 www.aosmd.com Page 2 of 6 AOT2906/AOB2906 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 100 100 10V 80 6V VDS=5V 5.5V 80 8V 60 60 ID (A) ID (A) 5V 40 40 20 125°C 20 VGS=4.5V 0 0 0 1 2 3 4 2 5 2.2 7 2 Normalized On-Resistance 8 VGS=8V 6 5 VGS=10V 4 3 4 5 6 VGS (Volts) Figure 2: Transfer Characteristics (Note E) VDS (Volts) Figure 1: On-Region Characteristics (Note E) RDS(ON) (mΩ) 25°C 3 VGS=10V ID=20A 1.8 1.6 1.4 1.2 VGS=8V ID=20A 1 0.8 2 0 5 10 15 20 25 0 30 25 50 75 100 125 150 175 200 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature (Note E) ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage (Note E) 14 1.0E+02 ID=20A 1.0E+01 1.0E+00 125°C 10 IS (A) RDS(ON) (mΩ) 12 8 1.0E-01 125°C 1.0E-02 6 25°C 1.0E-03 4 25°C 1.0E-04 2 1.0E-05 2 4 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage (Note E) Rev.2.0: May 2016 www.aosmd.com 0.0 0.2 0.4 0.6 0.8 1.0 VSD (Volts) Figure 6: Body-Diode Characteristics (Note E) Page 3 of 6 AOT2906/AOB2906 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10 4500 VDS=50V ID=20A 4000 3500 Capacitance (pF) VGS (Volts) 8 6 4 3000 Ciss 2500 2000 Coss 1500 1000 2 Crss 500 0 0 0 10 20 30 40 50 0 Qg (nC) Figure 7: Gate-Charge Characteristics 40 60 80 100 VDS (Volts) Figure 8: Capacitance Characteristics 1000.0 500 TJ(Max)=175°C TC=25°C 10µs 10µs RDS(ON) limited 400 100µs 10.0 Power (W) 100.0 ID (Amps) 20 1ms 10ms DC 1.0 TJ(Max)=175°C TC=25°C 0.1 0.0 0.01 0.1 300 200 100 1 10 VDS (Volts) 100 1000 0 0.0001 0.001 0.01 0.1 1 10 100 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toCase (Note F) VGS> or equal to 8V Figure 9: Maximum Forward Biased Safe Operating Area (Note F) ZθJC Normalized Transient Thermal Resistance 10 D=Ton/T TJ,PK=TC+PDM.ZθJC.RθJC In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse RθJC=0.8°C/W 1 0.1 PDM Single Pulse Ton T 0.01 1E-05 0.0001 0.001 0.01 0.1 1 10 100 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) Rev.2.0: May 2016 www.aosmd.com Page 4 of 6 AOT2906/AOB2906 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 200 140 180 120 Power Dissipation (W) 160 Current rating ID (A) 140 120 100 80 60 40 100 80 60 40 20 20 0 0 0 25 50 75 100 125 150 175 0 TCASE (°C) Figure 12: Power De-rating (Note F) 25 50 75 100 125 150 175 TCASE (°C) Figure 13: Current De-rating (Note F) 10000 TA=25°C Power (W) 1000 100 10 1 1E-05 0.001 0.1 10 1000 ZθJA Normalized Transient Thermal Resistance Pulse Width (s) Figure 14: Single Pulse Power Rating Junction-to-Ambient (Note H) 10 1 D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse RθJA=60°C/W 0.1 PDM 0.01 Single Pulse Ton 0.001 0.0001 0.001 0.01 0.1 1 10 T 100 1000 Pulse Width (s) Figure 15: Normalized Maximum Transient Thermal Impedance (Note H) Rev.2.0: May 2016 www.aosmd.com Page 5 of 6 AOT2906/AOB2906 Figure A: Charge Gate Charge Test Circuit & Waveforms Gate Test Circuit & Waveform Vgs Qg 10V + + Vds VDC - Qgs Qgd VDC - DUT Vgs Ig Charge Figure B: Resistive Switching Test Circuit & Waveforms Resistive Switching Test Circuit & Waveforms RL Vds Vds Vgs 90% + Vdd DUT VDC - Rg 10% Vgs Vgs td(on) tr td(off) ton tf toff Figure C: UnclampedInductive InductiveSwitching Switching (UIS) Test Unclamped TestCircuit Circuit&&Waveforms Waveforms L 2 EAR= 1/2 LIAR Vds BVDSS Vds Id + Vdd Vgs Vgs I AR VDC - Rg Id DUT Vgs Vgs Figure D: Recovery Diode Recovery Test Circuit & Waveforms Diode Test Circuit & Waveforms Q rr = - Idt Vds + DUT Vds - Isd Vgs Ig Rev.2.0: May 2016 Vgs L Isd + Vdd t rr dI/dt I RM Vdd VDC - IF Vds www.aosmd.com Page 6 of 6