Datasheet

AOT2906/AOB2906
100V N-Channel AlphaSGT TM
General Description
Product Summary
VDS
• Trench Power AlphaSGTTM technology
• Low RDS(ON)
• Low Gate Charger
• Optimized fast-switching applications
Applications
ID (at VGS=10V)
100V
122A
RDS(ON) (at VGS=10V)
< 6.2mΩ
< 5.9mΩ∗
RDS(ON) (at VGS=8V)
< 7.2mΩ
< 6.9mΩ∗
100% UIS Tested
100% Rg Tested
• Synchronous Rectifiers in DC/DC and AC/DC Converters
• Industrial and Motor Drive applications
TO-263
D2PAK
TO220
Top View
Bottom View
D
Top View
Bottom View
D
D
D
D
G
G
D
S
S
AOT2906
D
G
G
S
S
G
S
AOB2906
Orderable Part Number
Package Type
Form
Minimum Order Quantity
AOT2906
AOB2906
TO-220
TO-263
Tube
Tape & Reel
1000
800
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Drain-Source Voltage
Symbol
VDS
Gate-Source Voltage
VGS
TC=25°C
Continuous Drain
Current
Pulsed Drain Current C
Avalanche Current
C
Avalanche energy
L=0.1mH
VDS Spike
10µs
TC=25°C
Power Dissipation B
TC=100°C
C
TA=25°C
Power Dissipation A
TA=70°C
Junction and Storage Temperature Range
Thermal Characteristics
Parameter
t ≤ 10s
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A D Steady-State
Steady-State
Maximum Junction-to-Case
* Surface mount package TO263(AOB2906)
Rev.2.0: May 2016
V
A
90
25.5
IDSM
TA=70°C
±20
310
IDM
TA=25°C
Continuous Drain
Current
Units
V
122
ID
TC=100°C
Maximum
100
A
20.5
IAS
33
A
EAS
54
mJ
VSPIKE
120
V
187
PD
W
94
8.3
PDSM
TJ, TSTG
Symbol
RθJA
RθJC
W
5.3
-55 to 175
Typ
12
50
0.62
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°C
Max
15
60
0.8
Units
°C/W
°C/W
°C/W
Page 1 of 6
AOT2906/AOB2906
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
Conditions
Min
ID=250µA, VGS=0V
100
Zero Gate Voltage Drain Current
IGSS
VGS(th)
Gate-Body leakage current
VDS=0V, VGS=±20V
Gate Threshold Voltage
VDS=VGS, ID=250µA
Static Drain-Source On-Resistance
1
TJ=55°C
VGS=10V, ID=20A
±100
nA
2.9
3.5
V
TO-220
5.1
6.2
TJ=125°C
8.2
10
2.3
VGS=8V, ID=20A
TO-220
5.5
7.2
mΩ
TO-263
4.8
5.9
mΩ
VGS=8V, ID=20A
TO-263
5.2
6.9
mΩ
1
V
118
A
VDS=5V, ID=20A
60
VSD
Diode Forward Voltage
IS=1A, VGS=0V
0.69
IS
Maximum Body-Diode Continuous Current
DYNAMIC PARAMETERS
Ciss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Rg
Gate resistance
VGS=0V, VDS=50V, f=1MHz
Gate Source Charge
Qgd
Gate Drain Charge
tD(on)
Turn-On DelayTime
tr
Turn-On Rise Time
tD(off)
Turn-Off DelayTime
tf
trr
Turn-Off Fall Time
Qrr
S
2685
pF
1465
pF
52
f=1MHz
SWITCHING PARAMETERS
Total Gate Charge
Qg(10V)
Qgs
mΩ
VGS=10V, ID=20A
Forward Transconductance
Crss
Units
µA
5
gFS
Coss
Max
V
VDS=100V, VGS=0V
IDSS
RDS(ON)
Typ
VGS=10V, VDS=50V, ID=20A
VGS=10V, VDS=50V, RL=2.5Ω,
RGEN=3Ω
0.6
pF
1.2
1.8
Ω
44
65
nC
10
nC
12
nC
14
ns
18
ns
32
ns
22
ns
IF=20A, di/dt=500A/µs
43
Body Diode Reverse Recovery Charge IF=20A, di/dt=500A/µs
215
ns
nC
Body Diode Reverse Recovery Time
A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The
Power dissipation PDSM is based on R θJA t≤ 10s and the maximum allowed junction temperature of 150°C. The value in any given application
depends on the user's specific board design, and the maximum temperature of 175°C may be used if the PCB allows it.
B. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Single pulse width limited by junction temperature TJ(MAX)=175°C.
D. The RθJA is the sum of the thermal impedance from junction to case RθJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming
a maximum junction temperature of TJ(MAX)=175°C. The SOA curve provides a single pulse rating.
G. The maximum current rating is package limited.
H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C.
APPLICATIONS OR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT
ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE
PRODUCT DESIGN,FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev.2.0: May 2016
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Page 2 of 6
AOT2906/AOB2906
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
100
100
10V
80
6V
VDS=5V
5.5V
80
8V
60
60
ID (A)
ID (A)
5V
40
40
20
125°C
20
VGS=4.5V
0
0
0
1
2
3
4
2
5
2.2
7
2
Normalized On-Resistance
8
VGS=8V
6
5
VGS=10V
4
3
4
5
6
VGS (Volts)
Figure 2: Transfer Characteristics (Note E)
VDS (Volts)
Figure 1: On-Region Characteristics (Note E)
RDS(ON) (mΩ)
25°C
3
VGS=10V
ID=20A
1.8
1.6
1.4
1.2
VGS=8V
ID=20A
1
0.8
2
0
5
10
15
20
25
0
30
25
50
75
100
125
150
175
200
Temperature (°C)
Figure 4: On-Resistance vs. Junction Temperature
(Note E)
ID (A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage (Note E)
14
1.0E+02
ID=20A
1.0E+01
1.0E+00
125°C
10
IS (A)
RDS(ON) (mΩ)
12
8
1.0E-01
125°C
1.0E-02
6
25°C
1.0E-03
4
25°C
1.0E-04
2
1.0E-05
2
4
6
8
10
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note E)
Rev.2.0: May 2016
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0.0
0.2
0.4
0.6
0.8
1.0
VSD (Volts)
Figure 6: Body-Diode Characteristics
(Note E)
Page 3 of 6
AOT2906/AOB2906
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
4500
VDS=50V
ID=20A
4000
3500
Capacitance (pF)
VGS (Volts)
8
6
4
3000
Ciss
2500
2000
Coss
1500
1000
2
Crss
500
0
0
0
10
20
30
40
50
0
Qg (nC)
Figure 7: Gate-Charge Characteristics
40
60
80
100
VDS (Volts)
Figure 8: Capacitance Characteristics
1000.0
500
TJ(Max)=175°C
TC=25°C
10µs
10µs
RDS(ON)
limited
400
100µs
10.0
Power (W)
100.0
ID (Amps)
20
1ms
10ms
DC
1.0
TJ(Max)=175°C
TC=25°C
0.1
0.0
0.01
0.1
300
200
100
1
10
VDS (Volts)
100
1000
0
0.0001
0.001
0.01
0.1
1
10
100
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-toCase (Note F)
VGS> or equal to 8V
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
ZθJC Normalized Transient
Thermal Resistance
10
D=Ton/T
TJ,PK=TC+PDM.ZθJC.RθJC
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
RθJC=0.8°C/W
1
0.1
PDM
Single Pulse
Ton
T
0.01
1E-05
0.0001
0.001
0.01
0.1
1
10
100
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
Rev.2.0: May 2016
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Page 4 of 6
AOT2906/AOB2906
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
200
140
180
120
Power Dissipation (W)
160
Current rating ID (A)
140
120
100
80
60
40
100
80
60
40
20
20
0
0
0
25
50
75
100
125
150
175
0
TCASE (°C)
Figure 12: Power De-rating (Note F)
25
50
75
100
125
150
175
TCASE (°C)
Figure 13: Current De-rating (Note F)
10000
TA=25°C
Power (W)
1000
100
10
1
1E-05
0.001
0.1
10
1000
ZθJA Normalized Transient
Thermal Resistance
Pulse Width (s)
Figure 14: Single Pulse Power Rating Junction-to-Ambient (Note H)
10
1
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
RθJA=60°C/W
0.1
PDM
0.01
Single Pulse
Ton
0.001
0.0001
0.001
0.01
0.1
1
10
T
100
1000
Pulse Width (s)
Figure 15: Normalized Maximum Transient Thermal Impedance (Note H)
Rev.2.0: May 2016
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Page 5 of 6
AOT2906/AOB2906
Figure
A: Charge
Gate Charge
Test Circuit
& Waveforms
Gate
Test Circuit
& Waveform
Vgs
Qg
10V
+
+ Vds
VDC
-
Qgs
Qgd
VDC
-
DUT
Vgs
Ig
Charge
Figure B: Resistive Switching Test Circuit & Waveforms
Resistive Switching Test Circuit & Waveforms
RL
Vds
Vds
Vgs
90%
+ Vdd
DUT
VDC
-
Rg
10%
Vgs
Vgs
td(on)
tr
td(off)
ton
tf
toff
Figure C:
UnclampedInductive
InductiveSwitching
Switching (UIS) Test
Unclamped
TestCircuit
Circuit&&Waveforms
Waveforms
L
2
EAR= 1/2 LIAR
Vds
BVDSS
Vds
Id
+ Vdd
Vgs
Vgs
I AR
VDC
-
Rg
Id
DUT
Vgs
Vgs
Figure
D: Recovery
Diode Recovery
Test Circuit
& Waveforms
Diode
Test Circuit
& Waveforms
Q rr = - Idt
Vds +
DUT
Vds -
Isd
Vgs
Ig
Rev.2.0: May 2016
Vgs
L
Isd
+ Vdd
t rr
dI/dt
I RM
Vdd
VDC
-
IF
Vds
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Page 6 of 6