AOT3N60 600V,2.5A N-Channel MOSFET General Description Product Summary The AOT3N60 have been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular ACDC applications.By providing low RDS(on), Ciss and Crss along with guaranteed avalanche capability these parts can be adopted quickly into new and existing offline power supply designs. VDS ID (at VGS=10V) 700V@150℃ 2.5A RDS(ON) (at VGS=10V) <3.5Ω 100% UIS Tested 100% Rg Tested For Halogen Free add "L" suffix to part number: AOT3N60L Top View D TO-220 G G D S S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage Continuous Drain Current VGS TC=25°C TC=100°C Maximum 600 Units V ±30 V 2.5 ID 1.9 A Pulsed Drain Current C IDM Avalanche Current C IAR 2 A Repetitive avalanche energy C EAR 60 mJ Single pulsed avalanche energy G Peak diode recovery dv/dt TC=25°C Power Dissipation B Derate above 25oC Junction and Storage Temperature Range Maximum lead temperature for soldering purpose, 1/8" from case for 5 seconds Thermal Characteristics Parameter Maximum Junction-to-Ambient A,D EAS dv/dt 120 5 83 mJ V/ns W 0.7 -55 to 150 W/ oC °C 300 °C Maximum Case-to-sink A Maximum Junction-to-Case Rev5: May 2011 8 PD TJ, TSTG TL Symbol RθJA RθCS Typical 54 Maximum 65 Units °C/W 1.2 0.5 1.5 °C/W °C/W RθJC www.aosmd.com Page 1 of 5 AOT3N60 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions Min ID=250µA, VGS=0V, TJ=25°C 600 Typ Max Units STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage BVDSS /∆TJ Breakdown Voltage Temperature Coefficient IDSS Zero Gate Voltage Drain Current IGSS Gate-Body leakage current VDS=0V, VGS=±30V Gate Threshold Voltage VDS=5V ID=250µA VGS(th) ID=250µA, VGS=0V, TJ=150°C 700 V ID=250µA, VGS=0V 0.65 V/ oC VDS=600V, VGS=0V 1 VDS=480V, TJ=125°C 10 ±100 3 µA 4 4.5 nΑ V 3.5 Ω 1 V RDS(ON) Static Drain-Source On-Resistance VGS=10V, ID=1.25A 2.9 gFS Forward Transconductance VDS=40V, ID=1.25A 2.8 VSD Diode Forward Voltage IS=1A,VGS=0V 0.64 S IS Maximum Body-Diode Continuous Current 2 A ISM Maximum Body-Diode Pulsed Current 8 A DYNAMIC PARAMETERS Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance VGS=0V, VDS=25V, f=1MHz VGS=0V, VDS=0V, f=1MHz SWITCHING PARAMETERS Qg Total Gate Charge VGS=10V, VDS=480V, ID=2A 240 304 370 pF 25 31.4 38 pF 2.6 3.3 4 pF 2.3 2.9 6.0 Ω 9.9 12 nC Qgs Gate Source Charge 2.1 3 nC Qgd Gate Drain Charge 4.6 6 nC tD(on) Turn-On DelayTime 17 20 ns tr Turn-On Rise Time 17 20 ns tD(off) Turn-Off DelayTime 24 30 ns tf trr Turn-Off Fall Time 16 20 ns 175 210 1.4 1.7 ns µC Qrr VGS=10V, VDS=300V, ID=2A, RG=25Ω IF=2A,dI/dt=100A/µs,VDS=100V Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge IF=2A,dI/dt=100A/µs,VDS=100V A. The value of R θJA is measured with the device in a still air environment with T A =25°C. B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C, Ratings are based on low frequency and duty cycles to keep initial TJ =25°C. D. The R θJA is the sum of the thermal impedence from junction to case R θJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of T J(MAX)=150°C. The SOA curve provides a single pulse rating. G. L=60mH, IAS=2A, VDD=150V, RG=25Ω, Starting TJ=25°C THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Rev5: May 2011 www.aosmd.com Page 2 of 5 AOT3N60 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 5 10 10V -55°C VDS=40V 6.5V 4 6V ID(A) ID (A) 3 125°C 1 2 VGS=5.5V 25°C 1 0 0.1 0 5 10 15 20 25 30 2 4 VDS (Volts) Fig 1: On-Region Characteristics 6 8 10 VGS(Volts) Figure 2: Transfer Characteristics 6.0 2.5 Normalized On-Resistance 5.5 RDS(ON) (Ω ) 5.0 VGS=10V 4.5 4.0 3.5 3.0 2.5 VGS=10V ID=1.25A 2 1.5 1 0.5 2.0 0 1 2 3 4 5 0 6 -100 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage -50 0 50 100 150 200 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature 1.0E+01 1.2 40 125°C 1.0E-01 IS (A) BVDSS (Normalized) 1.0E+00 1.1 1 1.0E-02 25°C 1.0E-03 0.9 1.0E-04 0.8 1.0E-05 -100 -50 0 50 100 150 200 TJ (°C) Figure 5:Break Down vs. Junction Temperature Rev5: May 2011 www.aosmd.com 0.0 0.2 0.4 0.6 0.8 1.0 1.2 VSD (Volts) Figure 6: Body-Diode Characteristics (Note E) Page 3 of 5 AOT3N60 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 15 1000 VDS=480V ID=2A Ciss Capacitance (pF) VGS (Volts) 12 9 6 100 Coss 10 Crss 3 0 1 0 2 4 6 8 10 12 Qg (nC) Figure 7: Gate-Charge Characteristics 14 0.1 10 1 10 VDS (Volts) Figure 8: Capacitance Characteristics 100 3.0 10µs ID (Amps) 1 100µs 1ms 0.1 DC TJ(Max)=150°C TC=25°C 10ms 2.5 Current rating ID(A) RDS(ON) limited 2.0 1.5 1.0 0.5 0.01 1 10 100 1000 0.0 0 VDS (Volts) Figure 9: Maximum Forward Biased Safe Operating Area for AOT3N60 (Note F) 25 50 75 100 125 150 TCASE (°C) Figure 10: Current De-rating (Note B) ZθJC Normalized Transient Thermal Resistance 10 1 D=Ton/T TJ,PK=TC+PDM.ZθJC.RθJC RθJC=1.5°C/W In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse PD 0.1 Ton Single Pulse T 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 100 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance for AOT3N60 (Note F) Rev5: May 2011 www.aosmd.com Page 4 of 5 AOT3N60 Gate Charge Test Circuit & Waveform Vgs Qg 10V + + VDC - VDC DUT Qgs Vds Qgd - Vgs Ig Charge Res istive Switching Test Circuit & Waveforms RL Vds Vds DUT Vgs + VDC 90% Vdd - Rg 10% Vgs Vgs t d(on) tr t d(off) t on tf t off Unclamped Inductive Switching (UIS) Test Circuit & Waveforms L EAR= 1/2 LI Vds 2 AR BVDSS Vds Id + Vgs Vgs VDC - Rg Vdd I AR Id DUT Vgs Vgs Diode Recovery Test Circuit & Waveforms Qrr = - Idt Vds + DUT Vgs Vds - Isd Vgs Ig Rev5: May 2011 L Isd + VDC - IF trr dI/dt IRM Vdd Vdd Vds www.aosmd.com Page 5 of 5