AOT402 N-Channel Enhancement Mode Field Effect Transistor General Description Features The AOT402 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable for use in PWM, load switching and general purpose applications. Standard Product AOT402 is Pb-free (meets ROHS & Sony 259 specifications). AOT402L is a Green Product ordering option. AOT402 and AOT402L are electrically identical. VDS (V) = 105V ID = 110 A (VGS = 10V) RDS(ON) < 8.6 mΩ (VGS = 10V) @ ID = 30A RDS(ON) < 10 mΩ (VGS = 6V) TO-220 D Top View Drain Connected to Tab G S G D S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage TC=25°C Continuous Drain Current G C C Repetitive avalanche energy L=0.3mH C TC=25°C Power Dissipation B Junction and Storage Temperature Range V A 200 IAR 100 A EAR 540 mJ 85 300 W 150 TJ, TSTG Thermal Characteristics Parameter Alpha & Omega Semiconductor, Ltd. ±25 ID IDM PD TC=100°C Maximum Junction-to-Ambient A Maximum Junction-to-Case B Units V 110 TC=100°C Pulsed Drain Current Avalanche Current Maximum 105 °C -55 to 175 Steady-State Symbol RθJA Steady-State RθJC Typ Max Units 47 0.25 60 0.5 °C/W °C/W AOT402 Electrical Characteristics (T J=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current Conditions Min ID=10mA, VGS=0V 105 1 TJ=55°C IGSS Gate-Body leakage current VDS=0V, VGS=±25V Gate Threshold Voltage VDS=VGS, ID=250µA ID(ON) On state drain current VGS=10V, VDS=5V 4 V 6.9 8.6 12.8 15 VGS=6V, ID=30A 7.9 10 VDS=5V, ID=30A 88 gFS Forward Transconductance VSD Diode Forward Voltage IS=1A, VGS=0V Maximum Body-Diode Continuous Current 2 200 TJ=125°C DYNAMIC PARAMETERS Ciss Input Capacitance Reverse Transfer Capacitance Rg Gate resistance SWITCHING PARAMETERS Qg(10V) Total Gate Charge Qgs Gate Source Charge Qgd Gate Drain Charge tD(on) Turn-On DelayTime tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf Turn-Off Fall Time trr Qrr µA 3.3 Static Drain-Source On-Resistance Crss 5 nA RDS(ON) Output Capacitance Units 100 VGS=10V, ID=30A Coss Max V VDS=84V, VGS=0V VGS(th) IS Typ A 0.7 7.7 mΩ mΩ S 1 V 110 A 10 nF VGS=0V, VDS=25V, f=1MHz 820 VGS=0V, VDS=0V, f=1MHz 1.25 2 Ω 182 230 nC pF 300 VGS=10V, VDS=25V, ID=30A VGS=10V, VDS=25V, RL=0.75Ω, RGEN=3Ω pF 54 nC 44 nC 30.5 ns 42.5 ns 66 ns 16 IF=30A, dI/dt=100A/µs Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge IF=30A, dI/dt=100A/µs 86 ns 115 375 ns nC A: The value of R θJA is measured with the device in a still air environment with T A =25°C. B. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C: Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175°C. D. The R θJA is the sum of the thermal impedence from junction to case R θJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of TJ(MAX)=175°C. G. The maximum current rating is limited by bond-wires. Rev0: Sept. 2005 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Alpha & Omega Semiconductor, Ltd. AOT402 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 200 80 10V 175 6V VDS=5V 150 60 5V ID(A) ID (A) 125 100 75 40 4.5V 50 20 25 125°C VGS=4V 25°C 0 0 0 1 2 3 4 5 0 VDS (Volts) Fig 1: On-Region Characteristics 2 3 4 5 VGS(Volts) Figure 2: Transfer Characteristics 10 2.4 9 VGS=6V Normalized On-Resistance RDS(ON) (mΩ) 1 8 7 6 VGS=10V 5 2.2 VGS=10V ID=30A 2 1.8 1.6 VGS=6V ID=30A 1.4 1.2 1 4 0 20 40 60 80 0.8 100 0 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 25 50 75 100 125 150 175 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature 1.0E+02 18 ID=30A 16 1.0E+01 125°C 1.0E+00 125°C IS (A) RDS(ON) (mΩ) 14 12 1.0E-01 25°C 1.0E-02 10 25°C 1.0E-03 8 1.0E-04 6 0.0 0 4 8 12 16 20 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage Alpha & Omega Semiconductor, Ltd. 0.2 0.4 0.6 0.8 1.0 VSD (Volts) Figure 6: Body-Diode Characteristics 1.2 AOT402 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10 12000 VDS=25V ID=30A 10000 Ciss Capacitance (pF) VGS (Volts) 8 6 4 8000 6000 4000 Coss 2 2000 Crss 0 0 0 25 50 75 100 125 150 175 Qg (nC) Figure 7: Gate-Charge Characteristics 0 200 1000.0 20 40 60 80 VDS (Volts) Figure 8: Capacitance Characteristics 100 1000 TJ(Max)=175°C, TA=25°C 10µs RDS(ON) limited 600 100µs 10.0 10ms DC 1.0 400 0.1 0.1 1 10 100 VDS (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note F) 10 ZθJC Normalized Transient Thermal Resistance TJ(Max)=175°C TA=25°C 800 Power (W) ID (Amps) 100.0 D=Ton/T TJ,PK=TA+PDM.ZθJC.RθJC RθJC=0.5°C/W 1000 200 0.0001 0.001 0.01 0.1 1 10 Pulse Width (s) Figure 10: Single Pulse Power Rating Junctionto-Case (Note F) In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 PD 0.1 Ton Single Pulse 0.01 0.00001 0.0001 0.001 0.01 0.1 T 1 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) Alpha & Omega Semiconductor, Ltd. 10 100 AOT402 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 350 300 100 Power Dissipation (W) ID(A), Peak Avalanche Current 120 80 60 T=25°C 40 T=150°C 20 200 150 100 50 0 0.00001 0 0.0001 0.001 0.01 Time in avalanche, tA (s) Figure 12: Single Pulse Avalanche capability 100 80 60 40 20 0 0 25 50 75 100 125 150 TCASE (°C) Figure 14: Current De-rating (Note B) Alpha & Omega Semiconductor, Ltd. 0 25 50 75 100 125 150 TCASE (°C) Figure 13: Power De-rating (Note B) 120 Current rating ID(A) 250 175 175