AO4407A P-Channel Enhancement Mode Field Effect Transistor General Description Features The AO4407A uses advanced trench technology to provide excellent RDS(ON), and ultra-low low gate charge with a 25V gate rating. This device is suitable for use as a load switch or in PWM applications. Standard Product AO4407A is Pb-free (meets ROHS & Sony 259 specifications). VDS = -30V (VGS = -10V) ID = -12A RDS(ON) < 11mΩ (VGS = -20V) RDS(ON) < 13mΩ (VGS = -10V) RDS(ON) < 38mΩ (VGS = -10V) UIS TESTED! RG, CISS, COSS, CRSS TESTED! D SOIC-8 Top View S D S D S D G D G S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol 10 Sec Steady State VDS Drain-Source Voltage -30 VGS ±25 Gate-Source Voltage TA=25°C Continuous Drain Current A TA=70°C Pulsed Drain Current ID IDM B -12 -9.2 -10 -7.4 -60 Avalanche Current G IAR 26 Repetitive avalanche energy L=0.3mH G EAR 101 Power Dissipation A TA=25°C PD TA=70°C Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A Maximum Junction-to-Lead C TJ, TSTG Symbol t ≤ 10s Steady State Steady State Alpha & Omega Semiconductor, Ltd. RθJA RθJL V A mJ 3.1 1.7 2.0 1.1 -55 to 150 Typ 32 60 17 Units V Max 40 75 24 W °C Units °C/W °C/W °C/W www.aosmd.com AO4407A Electrical Characteristics (TJ=25°C unless otherwise noted) Parameter Symbol STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current Conditions Min ID = -250µA, VGS = 0V -30 -10 TJ = 55°C -50 Gate-Body leakage current VDS = 0V, VGS = ±25V VGS(th) Gate Threshold Voltage VDS = VGS ID = -250µA -1.7 ID(ON) On state drain current VGS = -10V, VDS = -5V -60 nA -3 V 8.5 11 11.5 15 10 13 VGS = -5V, ID = -10A 27 38 VDS = -5V, ID = -10A 21 TJ=125°C Static Drain-Source On-Resistance gFS Forward Transconductance VSD IS = -1A,VGS = 0V Diode Forward Voltage Maximum Body-Diode Continuous Current VGS = -10V, ID = -12A DYNAMIC PARAMETERS Ciss Input Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance SWITCHING PARAMETERS Qg Total Gate Charge Qgs Gate Source Charge Qgd Turn-On DelayTime tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf Turn-Off Fall Time A -0.7 2060 VGS=0V, VDS=-15V, f=1MHz VGS=-10V, VDS=-15V, ID=-12A VGS=-10V, VDS=-15V, RL=1.25Ω, RGEN=3Ω mΩ S -1 V -3 A 2600 pF 370 pF 295 VGS=0V, VDS=0V, f=1MHz Gate Drain Charge tD(on) µA ±100 RDS(ON) Output Capacitance Units -2.3 VGS = -20V, ID = -12A Coss Max V VDS = -30V, VGS = 0V IGSS IS Typ pF 2.4 3.6 Ω 30 39 nC 4.6 nC 10 nC 11 ns 9.4 ns 24 ns 12 trr Body Diode Reverse Recovery Time IF=-12A, dI/dt=100A/µs 30 Qrr Body Diode Reverse Recovery Charge IF=-12A, dI/dt=100A/µs 22 ns 40 ns nC A: The value of R θJA is measured with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A = 25°C. The value in any given application depends on the user's specific board design. The current rating is based on the t ≤ 10s thermal resistance rating. B: Repetitive rating, pulse width limited by junction temperature. C. The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient. D. The static characteristics in Figures 1 to 6 are obtained using < 300 µs pulses, duty cycle 0.5% max. E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The SOA curve provides a single pulse rating. F. The current rating is based on the t ≤ 10s thermal resistance rating. G. EAR and IAR ratings are based on low frequency and duty cycles to keep T j=25C. Rev3: Jan 2008 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Alpha & Omega Semiconductor, Ltd. www.aosmd.com AO4407A TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 80 80 -10V VDS= -5V -6V 60 -5V -ID(A) -ID (A) 60 -4.5V 40 40 -4V 125°C 20 20 25°C VGS= -3.5V 0 0 0 1 2 3 4 5 0 0.5 40 1.5 2 2.5 3 3.5 4 4.5 5 1.6 Normalized On-Resistance VGS=-5V 30 RDS(ON) (mΩ) 1 -VGS(Volts) Figure 2: Transfer Characteristics -VDS (Volts) Figure 1: On-Region Characteristics 20 VGS=-10V 10 VGS=-20V ID=-12A 1.4 VGS=-10V ID=-12A 1.2 VGS=-5V ID=-10A 1.0 VGS=-20V 0 0 4 0.8 I12 dI/dt=100A/µs 20 F=-6.5A,16 8 0 -ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 30 50 75 100 125 150 175 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature 1E+01 ID=-12A 1E+00 25 1E-01 20 -IS (A) RDS(ON) (mΩ) 25 125°C 1E-02 125°C 1E-03 15 25°C THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING 1E-04 25°C OUT OF 10 SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, 1E-05 FUNCTIONS AND RELIABILITY WITHOUT NOTICE. 1E-06 5 3 4 5 6 7 8 9 10 -VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage Alpha & Omega Semiconductor, Ltd. 0.0 0.2 0.4 0.6 0.8 1.0 1.2 -VSD (Volts) Figure 6: Body-Diode Characteristics www.aosmd.com AO4407A TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 3000 10 Ciss Capacitance (pF) -VGS (Volts) 2500 VDS=-15V ID=-12A 8 6 4 2 2000 1500 1000 Coss 500 Crss 0 0 0 5 10 15 20 25 30 0 5 Qg (nC) Figure 7: Gate-Charge Characteristics 10 15 30 TJ(Max)=150°C TA=25°C 10µs 10 100µs 1 Power (W) 1ms -ID (Amps) 25 1000 100 10ms RDS(ON) limited 100ms 0.1 TJ(Max)=150°C TA=25°C 0.1 1 IF=-6.5A, dI/dt=100A/µs 10 100 Figure 9: Maximum Forward Biased Safe Operating Area (Note E) 1 10 D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA RθJA=75°C/W 1 0.00001 0.1 10 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junctionto-Ambient (Note E) -VDS (Volts) 10 100 10s DC 0.01 ZθJA Normalized Transient Thermal Resistance 20 -VDS (Volts) Figure 8: Capacitance Characteristics 0.001 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 0.1 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL PD COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, 0.01 Ton FUNCTIONS AND RELIABILITY WITHOUT T SingleNOTICE. Pulse 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance(Note E) Alpha & Omega Semiconductor, Ltd. www.aosmd.com