Reliability Report

AOS Semiconductor
Product Reliability Report
AOD4146,
rev A
Plastic Encapsulated Device
ALPHA & OMEGA Semiconductor, Inc
495 Mercury Drive
Sunnyvale, CA 94085
U.S.
Tel: (408) 830-9742
www.aosmd.com
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This AOS product reliability report summarizes the qualification result for AOD4146. Accelerated
environmental tests are performed on a specific sample size, and then followed by electrical test
at end point. Review of final electrical test result confirms that AOD4146 passes AOS quality and
reliability requirements. The released product will be categorized by the process family and be
monitored on a quarterly basis for continuously improving the product quality.
Table of Contents:
I.
II.
III.
IV.
Product Description
Package and Die information
Environmental Stress Test Summary and Result
Reliability Evaluation
I. Product Description:
The AOD4146 is fabricated with SDMOSTM trench technology that combines excellent RDS(ON)
with low gate charge. The result is outstanding efficiency with controlled switching behavior. This
universal technology is well suited for PWM, load switching and general purpose applications.
-RoHS Compliant
-Halogen Free*
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II. Die / Package Information:
AOD4146
Standard sub-micron
Low voltage N channel process
Package Type
3 leads TO252
Lead Frame
Bare Cu
Die Attach
Soft solder
Bond wire
G:1.3 mils Au; S: 12mils Al
Mold Material
Epoxy resin with silica filler
Flammability Rating
UL-94 V-0
Backside Metallization
Ti / Ni / Ag
Moisture Level
Up to Level 1 *
Note * based on info provided by assembler and mold compound supplier
Process
III. Result of Reliability Stress for AOD4146
Test Item
Test Condition
Time
Point
Solder
Reflow
Precondition
HTGB
168hr 85°c
/85%RH +3 cycle
reflow@260°c
Temp = 150°c ,
Vgs=100% of Vgsmax
HTRB
HAST
Pressure Pot
Lot Attribution
Total
Sample
size
-
9 lots
1210pcs
0
168 / 500
hrs
1 lot
82pcs
0
1000 hrs
(Note A*)
168 / 500
hrs
1 lot
1000 hrs
(Note A*)
130 +/- 2°c , 85%RH,
33.3 psi, Vgs = 80% of
Vgs max
100 hrs
9 lots
121°c , 29.7psi,
RH=100%
96 hrs
Temp = 150°c ,
Vds=80% of Vdsmax
(Note B**)
5 lots
(Note B**)
Temperature
Cycle
-65°c to 150°c ,
air to air,
250 / 500
cycles
8 lots
(Note B**)
Number
of
Failures
77+5 pcs /
lot
82pcs
0
77+5 pcs /
lot
495pcs
0
50+5 pcs /
lot
275pcs
0
50+5 pcs /
lot
440pcs
0
50+5 pcs /
lot
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III. Result of Reliability Stress for AOD4146
Continues
DPA
Internal Vision
Cross-section
X-ray
CSAM
NA
5
5
5
5
5
5
0
NA
5
5
0
Bond Integrity
Room Temp
150°c bake
150°c bake
0hr
250hr
500hr
40
40
40
40 wires
40 wires
40 wires
0
Solderability
245°c
5 sec
15
15 leads
0
Solder dunk
260°°c
10secs
3 cycles
1
30 units
0
Note A: The HTGB and HTRB reliability data presents total of available AOD4146 burn-in data
up to the published date.
Note B: The pressure pot, temperature cycle and HAST reliability data for AOD4146 comes from
the AOS generic package qualification data.
IV. Reliability Evaluation
FIT rate (per billion): 128
MTTF = 887 years
The presentation of FIT rate for the individual product reliability is restricted by the actual burn-in
sample size of the selected product (AOD4146). Failure Rate Determination is based on JEDEC
Standard JESD 85. FIT means one failure per billion hours.
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Failure Rate = Chi x 10 / [2 (N) (H) (Af)] = 1.83 x 10
MTTF = 109 / FIT = 7.77 x 106hrs = 887 years
/ [2x164x168x258] = 128
Chi² = Chi Squared Distribution, determined by the number of failures and confidence interval
N = Total Number of units from HTRB and HTGB tests
H = Duration of HTRB/HTGB testing
Af = Acceleration Factor from Test to Use Conditions (Ea = 0.7eV and Tuse = 55°C)
Acceleration Factor [Af] = Exp [Ea / k (1/Tj u – 1/Tj s)]
Acceleration Factor ratio list:
Af
55 deg C
70 deg C
85 deg C
100 deg C
115 deg C
130 deg C
150 deg C
258
87
32
13
5.64
2.59
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Tj s = Stressed junction temperature in degree (Kelvin), K = C+273.16
Tj u =The use junction temperature in degree (Kelvin), K = C+273.16
k = Boltzmann’s constant, 8.617164 X 10-5eV / K
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