UNISONIC TECHNOLOGIES CO., LTD UTD410 Power MOSFET N-CHANNEL ENHANCEMENT MODE 1 DESCRIPTION SOT-223 The UTD410 can provide excellent RDS(ON) and low gate charge by using advanced trench technology. This UTD410 is suitable for using as a load switch or in PWM applications. FEATURES 1 * VDS=30V, ID=8A * RDS(ON) =48mΩ @VGS =10V TO-252 SYMBOL ORDERING INFORMATION Ordering Number Lead Free Halogen Free UTD410L-TN3-R UTD410G-TN3-R UTD410L-TN3-T UTD410G-TN3-T UTD410L-AA3-R UTD410G-AA3-R www.unisonic.com.tw Copyright © 2013 Unisonic Technologies Co., Ltd Package TO-252 TO-252 SOT-223 Pin Assignment 1 2 3 G D S G D S G D S Packing Tape Reel Tube Tape Reel 1 of 3 QW-R502-142.B UTD410 Power MOSFET ABSOLUTE MAXIMUM RATINGS (TA=25°C, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage VDSS 30 V Gate-Source Voltage VGSS ±20 Continuous Drain Current ID 8 A Pulsed Drain Current (Note1) IDM 20 Repetitive Avalanche Energy (L=0.1mH Note1) EAR 10 mJ TO-252 2 Power Dissipation (TC=25°C) PD W SOT-223 2.3 Junction Temperature TJ +175 °C Storage Temperature TSTG -55 ~ +175 °C Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. THERMAL DATA PARAMETER Junction-to-Ambient (TC=25°C) SYMBOL TO-252 SOT-223 MIN θJA TYP 46 MAX 60 55 UNIT °C/W °C/W ELECTRICAL CHARACTERISTICS (TJ =25°C, unless otherwise specified) PARAMETER OFF CHARACTERISTICS Drain-Source Breakdown Voltage Drain-Source Leakage Current Gate-Source Leakage Current ON CHARACTERISTICS Gate-Threshold Voltage SYMBOL Drain-Source On-State Resistance RDS(ON) TEST CONDITIONS BVDSS IDSS IGSS VGS =0 V, ID =250µA VDS =24V,VGS =0V VDS =0 V, VGS = ±20V 30 VGS(TH) VDS =VGS, ID =250µA VGS=10V, ID =8A VGS=4.5V, ID =2A 1 DYNAMIC CHARACTERISTICS Input Capacitance CISS VDS =15 V, VGS =0V, f=1MHz Output Capacitance COSS Reverse Transfer Capacitance CRSS SWITCHING CHARACTERISTICS Turn-On Delay Time tD(ON) Turn-On Rise Time tR VGS=10V,VDD=15V, RL=1.8Ω, RG=3Ω Turn-Off Delay Time tD(OFF) Turn-Off Fall-Time tF Total Gate Charge QG Gate-Source Charge QGS VGS=10V, VDS=15V, ID=8A Gate-Drain Charge QGD SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS Drain-Source Diode Forward Voltage VSD VGS=0V, IS=1A Maximum Continuous Drain-Source IS Diode Forward Current Reverse Recovery Time tRR IF=8A, dIF/dt=100A/μs Reverse Recovery Charge QRR Note: 1. Pulse width limited by TJ(MAX) 2. Pulse width ≤300us, duty cycle ≤2%. 3. Surface mounted on 1 in2 copper pad of FR4 board UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw MIN TYP MAX UNIT 1 ±100 1.8 48 75 3 65 105 V µA nA V mΩ 288 57 39 pF pF pF 3.7 3.7 15.6 2.6 6.72 0.76 1.78 ns ns ns ns nC nC nC 0.75 12.6 5.1 1 V 4.3 A ns nC 2 of 5 QW-R502-142.B UTD410 Power MOSFET TYPICAL CHARACTERISTICS Normalized On-Resistance On-Resistance, RDS(ON) (mΩ) Continuous Drain Current, ID (A) Continuous Drain Current, ID (A) On-Resistance vs. Gate-Source Voltage Body-Diode Characteristics Maximum Continuous Drain-Source Diode Forward Current, IS (A) On-Resistance, RDS(ON) (mΩ) 190 170 150 ID=8A 130 110 125℃ 90 70 25℃ 50 30 10 0 3 4 6 8 10 Gate-Source Voltage, VGS (V) UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 1.0E+01 1.0E+00 1.0E-01 1.0E-02 1.0E-03 125℃ 25℃ 1.0E-04 1.0E-05 1.0E-06 0.0 0.2 0.4 0.6 0.8 1.0 1.2 Source-Drain Voltage, VSD (V) 3 of 5 QW-R502-142.B UTD410 Power MOSFET TYPICAL CHARACTERISTICS(Cont.) Capacitance Characteristics Gate-Charge Characteristics 1400 VDS=15V ID=8A 8 1200 1000 Capacitance (pF) Gate-Source Voltage, VGS (V) 10 6 4 CISS 800 600 CRSS 400 2 200 COSS 0 0 2 4 0 8 6 0 5 Total Gate Charge, Qg (nC) 10 15 20 25 30 Power (W) Continuous Drain Current, ID (A) Drain-Source Voltage, VDS (V) Normalized Maximum Transient Thermal Impedance Normalized Transient Thermal Resistance, ZθJA 10 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA RθJA=60°C/W 1 PD 0.1 TON Single Pulse 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 T 100 1000 Pulse Width (s) UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 4 of 5 QW-R502-142.B UTD410 Power MOSFET UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 5 of 5 QW-R502-142.B