Datasheet

UNISONIC TECHNOLOGIES CO., LTD
UT40N04
Power MOSFET
N-CHANNEL LOGIC LEVEL
ENHANCEMENT MODE FIDLD
EFFECT TRANSISTOR

DESCRIPTION
The UTC 40N04 is an N-channel enhancement mode FET using
advanced technology to provide fast switching speed, ruggedized
device design, low on-resistance and cost-effectiveness.

FEATURES
* Low on-Resistance
* Fast Switching Speed

SYMBOL

ORDERING INFORMATION
Ordering Number
Package
Lead Free
Halogen Free
UT40N04L-TN3-R
UT40N04G-TN3-R
TO-252
Note: Pin Assignment: G: Gate
D: Drain
S: Source

Pin Assignment
1
2
3
G
D
S
Packing
Tape Reel
MARKING
www.unisonic.com.tw
Copyright © 2016 Unisonic Technologies Co., Ltd
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UT40N04

Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TA=25°C Unless otherwise specified)
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
UNIT
40
V
±20
V
TC=25°C
25
A
Continuous Drain Current
ID
TC=70°C
20
A
Pulsed Drain Current (Note 1)
IDM
75
A
Avalanche Current
IAS
27
A
Avalanche Energy
L=0.1mH
EAS
37
mJ
TC=25°C
30
W
PD
Power Dissipation
TC=70°C
20
W
Operating Junction Temperature
TJ
-55 ~ 150
°C
Storage Temperature
TSTG
-55 ~ 150
°C
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive Rating : Pulse width limited by maximum junction temperature.

SYMBOL
VDS
VGS
RATINGS
THERMAL DATA
PARAMETER
Junction to Ambient
Junction to Case
SYMBOL
θJA
θJC
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
RATINGS
40
4.1
UNIT
°C/W
°C/W
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
Power MOSFET
ELECTRICAL CHARACTERISTICS (TJ =25°C, unless otherwise specified)
PARAMETER
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
SYMBOL
BVDSS
Drain-Source Leakage Current
IDSS
Gate- Source Leakage Current
On-State Drain Current (Note 1)
ON CHARACTERISTICS
Gate Threshold Voltage
IGSS
ID(ON)
Static Drain-Source On-State Resistance
(Note 1)
VGS(TH)
RDS(ON)
TEST CONDITIONS
ID=250µA, VGS=0V
VDS=32V, VGS=0V
VDS=30V, VGS=0V, TJ=125°C
VDS=0V, VGS=±20V
VDS=5V, VGS=10V
40
VDS=VGS, ID=250µA
VGS=5V, ID=8A
VGS=7V, ID=8A
VGS=10V, ID=10A
VDS=5V, ID=10A
VGS=0V, VDS=0V, f=1.0MHz
2
Forward Transconductance (Note 1)
gFS
Gate Resistance
RG
DYNAMIC PARAMETERS
Input Capacitance
CISS
VGS=0V, VDS=20V, f=1.0MHz
Output Capacitance
COSS
Reverse Transfer Capacitance
CRSS
SWITCHING PARAMETERS (Note 2)
(VGS=10V)
QG
Total Gate Charge
QG
(VGS=4.5V)
VDS=0.5V(BR)DSS, ID=10A
Gate to Source Charge
QGS
Gate to Drain Charge
QGD
Turn-ON Delay Time
tD(ON)
Rise Time
tR
VGS=10V, VDS=20V, ID≈-1A,
RGS=6Ω, RL=1Ω
Turn-OFF Delay Time
tD(OFF)
Fall-Time
tF
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Continuous Current
IS
Drain-Source Diode Forward Voltage
VSD
IF=10A, VGS=0V
(Note 1)
Reverse Recovery Time
trr
IF=10A, VGS=0V, dIF/dt=100A/µs
Reverse Recovery Charge
Qrr
Notes: 1. Pulse Test: Pulse width ≤ 300μs, Duty cycle≤2%.
2. Essentially independent of operating temperature.
3. Independent of Operating Temperature.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
MIN
TYP MAX UNIT
V
1
10
±250
75
2.4
26
22
19
30
1.55
3
50
45
29
µA
nA
A
V
mΩ
mΩ
mΩ
S
Ω
1150
157
80
pF
pF
pF
19
9
4.5
3
10
6
26
6
nC
nC
nC
nC
ns
ns
ns
ns
38
29
23
A
1.3
V
ns
nC
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Power MOSFET
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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