AO4801A 30V P-Channel MOSFET General Description The AO4801A combines advanced trench MOSFET technology with a low resistance package to provide extremely low R DS(ON) .This device is suitable for use as a load switch or in PWM applications. Features VDS -30V -5A ID (at VGS=-10V) RDS(ON) (at VGS=-10V) < 48mΩ RDS(ON) (at VGS =-4.5V) < 57mΩ RDS(ON) (at VGS =-2.5V) < 80mΩ SOIC-8 D2 D1 SOIC-8 Top View S2 G2 S1 G1 8 7 6 5 1 2 3 4 D2 D2 D1 D1 G1 G2 S1 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage Continuous Drain Current VGS TA=25°C Units V ±12 V A -4 Pulsed Drain Current C IDM Avalanche Current C IAS, IAR 17 A Avalanche energy L=0.1mH C TA=25°C EAS, EAR 14 mJ Power Dissipation B Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Lead -28 2 PD TA=70°C Junction and Storage Temperature Range 1/5 Maximum -30 -5 ID TA=70°C S2 TJ, TSTG Symbol t ≤ 10s Steady-State Steady-State W 1.3 RθJA RθJL -55 to 150 Typ 48 74 32 °C Max 62.5 90 40 Units °C/W °C/W °C/W www.freescale.net.cn AO4801A 30V P-Channel MOSFET Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS Drain-Source Breakdown Voltage BVDSS Conditions Min ID=-250µA, VGS=0V -30 Typ -1 Zero Gate Voltage Drain Current IGSS VGS(th) Gate-Body leakage current VDS=0V, VGS= ±12V Gate Threshold Voltage VDS=VGS ID=-250µA -0.5 ID(ON) On state drain current VGS=-4.5V, VDS=-5V -28 TJ=55°C -5 VGS=-10V, ID=-5A TJ=125°C ±100 nA -1.3 V 40 48 60 72 45 57 mΩ 80 mΩ -1 V -2.5 A A Static Drain-Source On-Resistance VGS=-2.5V, ID=-2.5A 60 gFS Forward Transconductance VDS=-5V, ID=-5A 18 VSD Diode Forward Voltage IS=-1A,VGS=0V -0.7 IS Maximum Body-Diode Continuous Current DYNAMIC PARAMETERS Ciss Input Capacitance Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance VGS=0V, VDS=-15V, f=1MHz VGS=0V, VDS=0V, f=1MHz SWITCHING PARAMETERS Qg(4.5V) Total Gate Charge Qgs Gate Source Charge Qgd Gate Drain Charge tD(on) Turn-On DelayTime tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf trr Body Diode Reverse Recovery Time Qrr mΩ S 515 645 780 pF 55 80 105 pF 30 55 80 pF 4 7.8 12 Ω 7 9 nC 5 VGS=-4.5V, VDS=-15V, ID=-5A µA -0.9 RDS(ON) VGS=-4.5V, ID=-3.5A Units V VDS=-30V, VGS=0V IDSS Coss Max 1.5 nC 2.5 nC 6.5 ns VGS=-10V, VDS=-15V, RL=3Ω, RGEN=6Ω 3.5 ns 41 ns IF=-5A, dI/dt=100A/µs 11 15 Body Diode Reverse Recovery Charge IF=-5A, dI/dt=100A/µs 3.5 5 Turn-Off Fall Time 9 ns ns nC A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The value in any given application depends on the user's specific board design. B. The power dissipation PD is based on TJ(MAX)=150°C, using ≤ 10s junction-to-ambient thermal resistance. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep initialTJ=25°C. D. The RθJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-ambient thermal impedence which is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse ratin g. 2/5 www.freescale.net.cn AO4801A 30V P-Channel MOSFET TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 30 20 -10V VDS=-5V 25 -4.5V 15 -3V -ID(A) -ID (A) 20 15 -2.5V 125°C 10 10 25°C 5 5 VGS=-2V 0 0 0 1 2 3 4 0 5 0.5 90 1.5 2 2.5 3 Normalized On-Resistance 1.8 VGS=-2.5V 70 RDS(ON) (mΩ ) 1 -VGS(Volts) Figure 2: Transfer Characteristics (Note E) -VDS (Volts) Fig 1: On-Region Characteristics (Note E) VGS=-4.5V 50 30 VGS=-10V VGS=-4.5V ID=-3.5A 1.6 VGS=-10V ID=-5A 1.4 VGS17 =-2.5V 5 ID=-2.5A 1.2 2 10 1 0.8 10 0 2 4 6 8 0 10 -ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage (Note E) 25 50 75 100 125 150 175 Temperature (°C) 0 Figure 4: On-Resistance vs. Junction Temperature 18 (Note E) 100 1.0E+01 ID=-5A 1.0E+00 40 80 125°C 1.0E-01 -IS (A) RDS(ON) (mΩ ) 125°C 60 1.0E-02 25°C 1.0E-03 40 25°C 1.0E-04 1.0E-05 20 0 2 4 6 8 10 -VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage (Note E) 3/5 0.0 0.2 0.4 0.6 0.8 1.0 1.2 -VSD (Volts) Figure 6: Body-Diode Characteristics (Note E) www.freescale.net.cn AO4801A 30V P-Channel MOSFET TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 1200 5 VDS=-15V ID=-5A 1000 Ciss Capacitance (pF) -VGS (Volts) 4 3 2 800 600 400 Coss 1 0 0 0 3 6 9 Qg (nC) Figure 7: Gate-Charge Characteristics 12 0 100.0 5 10 15 20 25 -VDS (Volts) Figure 8: Capacitance Characteristics 30 10000 TJ(Max)=150°C TA=25°C 10µs RDS(ON) limited 1000 100µs 1.0 Power (W) 10.0 -ID (Amps) Crss 200 1ms 10ms TJ(Max)=150°C TA=25°C 0.1 10 1s 10s DC 1 0.00001 0.0 0.1 1 10 100 100 -VDS (Volts) 0.001 0.1 10 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note F) Figure 9: Maximum Forward Biased Safe Operating Area (Note F) Zθ JA Normalized Transient Thermal Resistance 10 D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA RθJA=90°C/W In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 0.1 PD Ton Single Pulse 0.01 0.00001 0.0001 0.001 0.01 0.1 1 T 10 100 1000 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) 4/5 www.freescale.net.cn AO4801A 30V P-Channel MOSFET Gate Charge Test Circuit & Waveform Vgs Qg -10V - - VDC + VDC Qgd Qgs Vds + DUT Vgs Ig Charge Resistive Switching Test Circuit & Waveforms RL Vds toff ton Vgs - DUT Vgs VDC td(on) t d(off) tr tf 90% Vdd + Rg Vgs 10% Vds Unclamped Inductive Switching (UIS) Test Circuit & Waveforms 2 L E AR= 1/2 LIAR Vds Vds Id - Vgs Vgs VDC + Rg BVDSS Vdd Id I AR DUT Vgs Vgs Diode Recovery Test Circuit & Waveforms Q rr = - Idt Vds + DUT Vgs Vds Isd Vgs Ig 5/5 L -Isd + Vdd t rr dI/dt -I RM Vdd VDC - -I F -Vds www.freescale.net.cn