Dual P-channel MOSFET ELM54801AA-N ■General description ■Features ELM54801AA-N uses advanced trench technology to provide excellent Rds(on) and low gate charge. • • • • • Vds=-30V Id=-5A (Vgs=-10V) Rds(on) < 48mΩ (Vgs=-10V) Rds(on) < 57mΩ (Vgs=-4.5V) Rds(on) < 80mΩ (Vgs=-2.5V) ■Maximum absolute ratings Parameter Symbol Limit Unit Vds Vgs -30 ±12 V V Drain-source voltage Gate-source voltage Ta=25°C Ta=70°C Continuous drain current -5 -4 -28 Id Pulsed drain current Idm Avalanche current Avalanche energy L=0.1mH Ta=25°C Power dissipation Ias, Iar Eas, Ear Junction and storage temperature range Tj, Tstg A 17 14 2.0 Pd Ta=70°C Note 1.3 -55 to 150 A 3 A mJ 3 3 W 2 °C ■Thermal characteristics Parameter Maximum junction-to-ambient Symbol t≤10s Maximum junction-to-ambient Maximum junction-to-lead Steady-state Steady-state Rθja Rθjl ■Pin configuration SOP-8(TOP VIEW) 1 8 2 7 3 6 4 5 Typ. 48.0 Max. 62.5 Unit °C/W Note 1 74.0 32.0 90.0 40.0 °C/W °C/W 1, 4 ■Circuit Pin No. Pin name 1 2 3 SOURCE2 GATE2 SOURCE1 4 5 6 GATE1 DRAIN1 DRAIN1 7 8 DRAIN2 DRAIN2 5- 1 D2 D1 G2 G1 S1 S2 Dual P-channel MOSFET ELM54801AA-N ■Electrical characteristics Parameter STATIC PARAMETERS Symbol Condition Min. Drain-source breakdown voltage BVdss Id=-250μA, Vgs=0V -30 Zero gate voltage drain current Idss Vds=-30V, Vgs=0V Tj=55°C -5 Igss Vds=0V, Vgs=±12V Vgs(th) Vds=Vgs, Id=-250μA -0.5 On state drain current Id(on) Vgs=-4.5V, Vds=-5V -28 Forward transconductance Diode forward voltage Gfs Vsd Max. body-diode continuous current DYNAMIC PARAMETERS Input capacitance Ciss Output capacitance Reverse transfer capacitance Gate resistance Coss Crss Rg Tj=125°C Vgs=-4.5V, Id=-3.5A 48 72 57 Vgs=-2.5V, Id=-2.5A Vds=-5V, Id=-5A Is=-1A, Vgs=0V 60 18 -0.7 80 Qg Gate-source charge Qgs Gate-drain charge Turn-on delay time Qgd td(on) Turn-off delay time Turn-off fall time Body diode reverse recovery time Body diode reverse recovery charge NOTE : Vgs=0V, Vds=-15V, f=1MHz Vgs=0V, Vds=0V, f=1MHz Vgs=-4.5V, Vds=-15V Id=-5A μA nA V A Is SWITCHING PARAMETERS Total gate charge Turn-on rise time -0.9 ±100 -1.3 40 60 45 Vgs=-10V, Id=-5A Rds(on) V -1 Gate-body leakage current Gate threshold voltage Static drain-source on-resistance Typ. Ta=25°C Max. Unit mΩ -1.0 S V -2.5 A 515 645 780 pF 55 30 4.0 80 55 7.8 105 80 12.0 pF pF Ω 5.0 7.0 9.0 nC 1.5 nC 2.5 6.5 nC ns Vgs=-10V, Vds=-15V 3.5 ns td(off) Rl=3Ω, Rgen=6Ω tf trr If=-5A, dl/dt=100A/μs 41.0 9.0 11 15 ns ns ns 3.5 5.0 nC tr Qrr If=-5A, dl/dt=100A/μs 1. The value of Rθja is measured with the device mounted on 1in2 FR-4 board of 2oz. Copper, in still air environment with Ta =25°C. The value in any given application depends on the user's specific board design. 2. The power dissipation Pd is based on Tj(Max)=150°C, using 10s junction-to-ambient thermal resistance. 3. Repetitive rating, pulse width limited by junction temperature Tj(Max)=150°C. Ratings are based on low frequency and duty cycles to keep initial Tj=25°C. 4. The Rθja is the sum of the thermal impedence from junction to lead Rθjl and lead to ambient. 5. The static characteristics in Figures 1 to 6 are obtained using <300μs pulses, duty cycle 0.5% max. 6. These curves are based on the junction-to-ambient thermal impedence which is measured with the device mounted on 1in2 FR-4 board with 2oz.Copper, assuming a maximum junction temperature of Tj(Max)=150°C. The SOA curve provides a single pulse rating. 5- 2 Dual P-channel MOSFET AO4801A ELM54801AA-N ■Typical electrical and thermal characteristics 30 20 -10V 25 VDS=-5V -4.5V 15 -ID(A) -ID (A) 15 -3V 20 -2.5V 10 125°C 10 25°C 5 5 VGS=-2V 0 0 0 1 2 3 4 0 5 1 1.5 90 Normalized On-Resistance 1.8 VGS=-2.5V 70 VGS=-4.5V 50 30 2 2.5 3 -VGS(Volts) Figure 2: Transfer Characteristics (Note E) -VDS (Volts) Fig 1: On-Region Characteristics (Note E) RDS(ON) (mΩ ) 0.5 VGS=-10V VGS=-4.5V ID=-3.5A 1.6 VGS=-10V ID=-5A 1.4 VGS=-2.5V ID=-2.5A 1.2 1 0.8 10 0 2 4 6 8 0 10 -ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage (Note E) 25 50 75 100 125 150 175 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature (Note E) 100 1.0E+01 ID=-5A 1.0E+00 125°C 125°C 1.0E-01 -IS (A) RDS(ON) (mΩ ) 80 60 1.0E-02 25°C 1.0E-03 40 25°C 1.0E-04 1.0E-05 20 0 2 4 6 8 10 -VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage (Note E) 5- 3 0.0 0.2 0.4 0.6 0.8 1.0 -VSD (Volts) Figure 6: Body-Diode Characteristics (Note E) 1.2 Dual P-channel MOSFET ELM54801AA-N 1200 5 VDS=-15V ID=-5A 1000 Ciss Capacitance (pF) -VGS (Volts) 4 3 2 800 600 400 1 0 Crss 0 0 3 6 9 Qg (nC) Figure 7: Gate-Charge Characteristics 12 0 100.0 10µs RDS(ON) limited 10 15 20 25 -VDS (Volts) Figure 8: Capacitance Characteristics 1ms 10ms TJ(Max)=150°C TA=25°C 0.1 1 10 1 0.00001 100 -VDS (Volts) 0.001 0.1 10 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note F) Figure 9: Maximum Forward Biased Safe Operating Area (Note F) 10 100 10 1s 10s DC 0.0 0.1 30 TJ(Max)=150°C TA=25°C 1000 100µs 1.0 Zθ JA Normalized Transient Thermal Resistance 5 10000 Power (W) 10.0 -ID (Amps) Coss 200 D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA RθJA=90°C/W In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 0.1 PD Ton Single Pulse 0.01 0.00001 0.0001 0.001 0.01 0.1 1 T 10 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) 5- 4 100 1000 Dual P-channel MOSFET ELM54801AA-N ■Test circuit & waveform Gate Charge Test Circuit & Waveform Vgs Qg -10V - + VDC - Qgd Qgs Vds + VDC DUT Vgs Ig Charge Resistive Switching Test Circuit & Waveforms RL Vds Vgs DUT Vgs VDC - td(on) t d(off) tr tf 90% Vdd + Rg toff ton Vgs 10% Vds Unclamped Inductive Switching (UIS) Test Circuit & Waveforms 2 L E AR= 1/2 LIAR Vds Vds Id VDC - Vgs Vgs + Rg Vdd BVDSS Id I AR DUT Vgs Vgs Diode Recovery Test Circuit & Waveforms Q rr = - Idt Vds + DUT Vds - Isd Vgs Ig Vgs L -Isd + Vdd VDC - -I F t rr dI/dt -I RM -Vds 5- 5 Vdd