AO3407A P-Channel Enhancement Mode Field Effect Transistor General Description Features The AO3407A/L uses advanced trench technology to provide excellent RDS(ON) with low gate charge. This device is suitable for use as a load switch or in PWM applications. AO3407A and AO3407AL are electrically identical. -RoHS Compliant -AO3407AL is Halogen Free VDS (V) = -30V (V GS = -10V) ID = -4.3A RDS(ON) < 48mΩ (VGS = -10V) RDS(ON) < 78mΩ (VGS = -4.5V) Rg,Ciss,Coss,Crss Tested TO-236 (SOT-23) Top View D G D S G S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain A,F Current TA=25°C TA=70°C Pulsed Drain Current B TA=25°C Power Dissipation A TA=70°C Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient AF Maximum Junction-to-Ambient A C Maximum Junction-to-Lead Alpha & Omega Semiconductor, Ltd. Maximum -30 Units V ±20 V -4.3 -20 1.4 PD W 0.9 TJ, TSTG -55 to 150 Symbol t ≤ 10s Steady-State Steady-State A -3.5 ID IDM RθJA RθJL Typ 70 100 63 °C Max 90 125 80 Units °C/W °C/W °C/W www.aosmd.com AO3407A Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage Conditions Min ID=-250µA, VGS=0V -30 -1 Zero Gate Voltage Drain Current IGSS Gate-Body leakage current VDS=0V, VGS=±20V VGS(th) Gate Threshold Voltage VDS=VGS ID=-250µA -1.5 ID(ON) On state drain current VGS=-10V, VDS=-5V -30 RDS(ON) Static Drain-Source On-Resistance gFS Forward Transconductance VSD Diode Forward Voltage IS=-1A,VGS=0V Maximum Body-Diode Continuous Current TJ=55°C VGS=-10V, ID=-4.3A Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance SWITCHING PARAMETERS Qg (10V) Total Gate Charge (10V) Qg (4.5V) Total Gate Charge (4.5V) Qgs Gate Source Charge Qgd Gate Drain Charge tD(on) Turn-On DelayTime tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf Turn-Off Fall Time -5 -2 -2.5 V A 48 68 VGS=-4.5V, ID=-3A 61 78 VDS=-5V, ID=-4.3A 11 -0.78 668 VGS=-10V, VDS=-15V, ID=-4.3A VGS=-10V, VDS=-15V, RL=3.5Ω, RGEN=3Ω mΩ mΩ S -1 V -2 A 830 pF 126 pF 92 VGS=0V, VDS=0V, f=1MHz µA nA 39 VGS=0V, VDS=-15V, f=1MHz Units ±100 55 TJ=125°C DYNAMIC PARAMETERS Ciss Input Capacitance Coss Max V VDS=-30V, VGS=0V IDSS IS Typ pF 6 9 Ω 12.7 16 nC 6.4 nC 2 nC 4 nC 7.7 ns 6.8 ns 20 ns 10 trr Body Diode Reverse Recovery Time IF=-4.3A, dI/dt=100A/µs 22 Qrr Body Diode Reverse Recovery Charge IF=-4.3A, dI/dt=100A/µs 15 ns 30 ns nC A: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A =25°C. The value in any given application depends on the user's specific board design. B: Repetitive rating, pulse width limited by junction temperature. C. The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient. D. The static characteristics in Figures 1 to 6 are obtained using < 300µs pulses, duty cycle 0.5% max. E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The SOA curve provides a single pulse rating. F. The current rating is based on the t ≤ 10s thermal resistance rating. Rev1: May. 2008 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Alpha & Omega Semiconductor, Ltd. www.aosmd.com AO3407A TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10 30 -8V -10V 20 8 -4.5V 6 -ID(A) -ID (A) VDS=-5V -5V 25 15 -4V 25°C 4 10 VGS=-3.5V 5 2 0 125°C 0 0 1 2 3 4 5 0 1 2 3 4 5 -VGS(Volts) Figure 2: Transfer Characteristics -VDS (Volts) Figure 1: On-Region Characteristics 100 VGS=-4.5V 60 VGS=-10V 40 Normalized On-Resistance 1.6 80 RDS(ON) (mΩ) -40°C VGS=-10V ID=-4.3A 1.4 VGS=-4.5V ID=-3A 1.2 1.0 0.8 20 0 2 4 IF6=-6.5A, dI/dt=100A/µs 8 10 0.6 -50 -ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage ID=-4.3A 150 200 1E+00 1E-01 -IS (A) RDS(ON) (mΩ) 100 1E+01 120 100 50 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature 160 140 0 125°C 1E-02 125°C 80 1E-03 25°C FOR THE CONSUMER THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED MARKET. APPLICATIONS OR USES AS CRITICAL 60 COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING 1E-04 25°C -40°CDESIGN, -40°C OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT 40 1E-05 FUNCTIONS AND RELIABILITY WITHOUT NOTICE. 20 1E-06 2 4 6 8 10 0.0 0.2 0.4 0.6 0.8 1.0 1.2 -VGS (Volts) -V (Volts) SD Figure 5: On-Resistance vs. Gate-Source Voltage Figure 6: Body-Diode Characteristics Alpha & Omega Semiconductor, Ltd. www.aosmd.com AO3407A TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 1200 10 Ciss Capacitance (pF) -VGS (Volts) 1000 VDS=-15V ID=-4.3A 8 6 4 2 800 600 400 Coss 200 Crss 0 0 0 3 6 9 12 15 0 6 -Qg (nC) Figure 7: Gate-Charge Characteristics 18 24 30 -VDS (Volts) Figure 8: Capacitance Characteristics 100 30 100µs 1ms 1 TJ(Max)=150°C TA=25°C TJ(Max)=150°C TA=25°C 24 10µs RDS(ON) limited 10 Power (W) -ID (Amps) 12 18 12 10ms 6 100ms 0 0.001 DC 1s 0.1 0.1 dI/dt=100A/µs IF=-6.5A, 10 100 1 ZθJA Normalized Transient Thermal Resistance 1 D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA RθJA=125°C/W 0.1 1 10 100 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E) -VDS (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note E) 10 0.01 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 0.1 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL PD COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH 0.01APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, Ton FUNCTIONS AND RELIABILITY WITHOUT NOTICE. T Single Pulse 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance(Note E) Alpha & Omega Semiconductor, Ltd. www.aosmd.com