UNISONIC TECHNOLOGIES CO., LTD UT4422 Power MOSFET N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR DESCRIPTION The UT4422 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications. FEATURES * RDS(ON) < 15 mΩ @ VGS =10V, ID =11A RDS(ON) < 24 mΩ @ VGS =4.5 V, ID =10 A * Low Capacitance * Low Gate Charge * Fast Switching Capability * Avalanche Energy Specified SYMBOL ORDERING INFORMATION Ordering Number Note: UT4422G-S08-R Pin Assignment: G: Gate Package D: Drain SOP-8 S: Source 1 S 2 S Pin Assignment 3 4 5 6 S G D D 7 D 8 D Packing Tape Reel MARKING www.unisonic.com.tw Copyright © 2016 Unisonic Technologies Co., Ltd 1 of 6 QW-R502-206.D UT4422 Power MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25°C, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage VDSS 30 V Gate-Source Voltage VGSS ±20 V Continuous Drain Current (TA=25°C) (Note 1) ID 11 A Pulsed Drain Current IDM 50 A Power Dissipation (TC=25°C) PD 3 W Junction Temperature TJ +150 °C Storage Temperature TSTG -55 ~ +150 °C Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. Pulse width limited by TJ(MAX) THERMAL DATA PARAMETER SYMBOL θJA θJC Junction to Ambient Junction to Case RATINGS 59 ~ 75 16 ~ 24 UNIT °C/W °C/W ELECTRICAL CHARACTERISTICS (TJ =25°C, unless otherwise specified) PARAMETER OFF CHARACTERISTICS Drain-Source Breakdown Voltage Drain-Source Leakage Current Gate-Body Leakage Current ON CHARACTERISTICS Gate Threshold Voltage On State Drain Current Static Drain-Source On-Resistance SYMBOL TEST CONDITIONS TYP MAX UNIT 0.003 1 100 1.8 3 12.6 19.6 15 24 V A mΩ mΩ 800 140 80 1040 180 110 1250 220 140 pF pF pF 15 19.8 2.5 3.5 4.5 3.9 17.4 3.2 24 6.5 5.5 25 5 nC nC nC ns ns ns ns 0.75 1 V 4.3 A 17.5 21 ns 9.3 12 nC BVDSS IDSS IGSS VGS =0 V, ID =250 µA VDS =24 V, VGS =0 V VDS =0 V, VGS = ±20 V 30 VGS(TH) ID(ON) VDS =VGS, ID =250 µA VDS =5V, VGS =4.5 V VGS =10V, ID =11A VGS =4.5V, ID =10A 1 40 RDS(ON) DYNAMIC PARAMETERS Input Capacitance CISS VDS =15V, VGS =0V, f=1MHz Output Capacitance COSS Reverse Transfer Capacitance CRSS SWITCHING PARAMETERS Total Gate Charge QG VDS =15V, VGS =10V, ID =11A Gate Source Charge QGS Gate Drain Charge QGD Turn-ON Delay Time tD(ON) VGS=10V,VDS=15V,RL=1.35Ω, Turn-ON Rise Time tR RGEN =3Ω Turn-OFF Delay Time tD(OFF) Turn-OFF Fall-Time tF SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS Diode Forward Voltage VSD IS=1A,VGS=0V Maximum Body-Diode Continuous IS Current Body Diode Reverse Recovery Time tRR IF=11 A, dI/dt=100A/μs Body Diode Reverse Recovery QRR Charge UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw MIN V µA nA 2 of 5 QW-R502-206.D UT4422 Normalized On-Resistance Drain to Source On-Resistance, RDS(ON) (mΩ) Drain Current,ID (A) TYPICAL CHARACTERISTICS Drain Current,ID (A) Power MOSFET On-Resistance vs. Gate-Source Voltage 1.0E+01 ID=10A Reverse Drain Current,IS (A) Drain to Source On-Resistance, RDS(ON) (mΩ) 60 50 40 125°С 30 20 25°С Pulse width ≤80μs, duty cycle ≤0.5%. 10 2 6 8 4 Gate to Source Voltage,VGS (V) 10 UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw Body-Diode Characteristics 1.0E+00 1.0E-01 1.0E-02 125°С 25°С 1.0E-03 1.0E-04 1.0E-05 0.0 Pulse width ≤80μs, duty cycle ≤0.5%. 1.0 0.4 0.6 0.2 0.8 Body Diode Forward Voltage,VSD (V) 3 of 5 QW-R502-206.D UT4422 Power MOSFET TYPICAL CHARACTERISTICS(Cont.) Gate-Charge Characteristics 10 Capacitance Characteristics 1500 VDS=15V ID=11A 1250 8 CISS 1000 6 750 4 500 2 CRSS 0 0 0 4 8 12 16 Gate Charge,QG (nC) 0 20 Maximum Forward Biased Safe Operating Area 100.0 RDS(ON) Limited 100μs 1ms 10.0 0.1 0.1 30 Single Pulse Power Rating Junction-to-Ambient TJ(Max)=150°С TA=25°С 40 10μs 30 20 10 DC TJ(Max)=150°С TA=25°С 5 10 15 20 25 Drain to Source Voltage,VDS (V) 50 10ms 0.1s 1s 10s 1.0 0 0.001 0.01 1 10 100 Drain to Source Voltage,VDS (V) 0.1 1 10 100 1000 Pulse Width (s) Normalized Maximum Transient Thermal Impedance 10 Normalized Transient Thermal Resistance,ZθJA COSS 250 D=TON/T TJ,PK=TA+PDM.ZθJA.θJA θJA=40°С/W In descending order D=0.5,0.3,0.1,0.05,0.02,0.01,single pulse 1 PDM 0.1 TO N T Single Pulse 0.01 0.00001 0.0001 0.001 0.01 0.1 Pulse Width (s) UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 1 10 100 1000 4 of 5 QW-R502-206.D UT4422 Power MOSFET TYPICAL CHARACTERISTICS (Cont.) UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 5 of 5 QW-R502-206.D