FDM3622 N-Channel PowerTrench® MOSFET 100V, 4.4A, 60mΩ Features General Description Max rDS(on) = 60mΩ at VGS = 10V, ID = 4.4A Low Miller Charge This N-Channel MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench® process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance. Low QRR Body Diode Applications Max rDS(on) = 80mΩ at VGS = 6.0V, ID = 3.8A Optimized efficiency at high frequencies Distributed Power Architectures and VRMs. UIS Capability (Single Pulse and Repetitive Pulse) Primary Switch for 24V and 48V Systems RoHS Compliant High Voltage Synchronous Rectifier Formerly developmental type 82744 Bottom Top Pin 1 S S S S D S D S D G D G D D D D MLP 3.3x3.3 MOSFET Maximum Ratings TA = 25°C unless otherwise noted Symbol VDS Drain to Source Voltage Parameter VGS Gate to Source Voltage Drain Current ID -Continuous (Note 1a) -Pulsed PD TJ, TSTG Ratings 100 Units V ±20 V 4.4 20 Power Dissipation (Note 1a) 2.1 Power Dissipation (Note 1b) 0.9 Operating and Storage Junction Temperature Range -55 to +150 A W °C Thermal Characteristics RθJC Thermal Resistance, Junction to Case RθJA Thermal Resistance, Junction to Ambient (Note 1) 3.0 (Note 1a) 60 °C/W Package Marking and Ordering Information Device Marking FDM3622 Device FDM3622 ©2012 Fairchild Semiconductor Corporation FDM3622 Rev.C2 Package MLP 3.3x3.3 1 Reel Size 13 ’’ Tape Width 12 mm Quantity 3000 units www.fairchildsemi.com FDM3622 N-Channel PowerTrench® MOSFET November 2012 Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS Drain to Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current IGSS Gate to Source Leakage Current ID = 250μA, VGS = 0V 100 V VDS = 80V, VGS = 0V 1 TJ = 100°C 250 VGS = ±20V, VDS = 0V μA ±100 nA 4 V On Characteristics VGS(th) rDS(on) Gate to Source Threshold Voltage Static Drain to Source On Resistance VGS = VDS, ID = 250μA 2 VGS = 10V, ID = 4.4A 44 VGS = 6.0V, ID = 3.8A 56 80 VGS = 10V, ID = 4.4A , TJ = 150°C 92 120 820 1090 pF 125 170 pF 35 55 pF 60 mΩ Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate Resistance VDS = 25V, VGS = 0V, f = 1MHz Ω VDS = 15mV, f = 1MHz 3.1 11 20 ns VDD = 50V, ID = 4.4A VGS = 10V, RGEN = 24Ω 25 40 ns 35 56 ns 26 42 ns 13 17 nC Switching Characteristics td(on) Turn-On Delay Time tr Rise Time td(off) Turn-Off Delay Time tf Fall Time Qg Total Gate Charge Qgs Gate to Source Gate Charge Qgd Gate to Drain “Miller” Charge VGS = 10V VDD = 50V ID = 4.4A 3.6 nC 3.4 nC Drain-Source Diode Characteristics VSD Source to Drain Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge VGS = 0V, IS = 4.4A 1.25 VGS = 0V, IS = 2.2A 1.0 V 56 ns 108 nC IF = 4.4A, di/dt = 100A/μs V Notes: 1: RθJA is determined with the device mounted on a 1 in2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. RθJC is guaranteed by design while RθJA is determined by the user's board design. (a)RθJA = 60°C/W when mounted on a 1 in2 pad of 2 oz copper, 1.5’x1.5’x0.062’ thick PCB. (b)RθJA = 135°C/W when mounted on a minimum pad of 2 oz copper. a. 60°C/W when mounted on a 1 in2 pad of 2 oz copper b. 135°C/W when mounted on a minimum pad of 2 oz copper 2: Pulse Test: Pulse Width < 300μs, Duty cycle < 2.0%. FDM3622 Rev.C2 2 www.fairchildsemi.com FDM3622 N-Channel PowerTrench® MOSFET Electrical Characteristics TJ = 25°C unless otherwise noted 10 2.5 ID, DRAIN CURRENT (A) VGS = 10V NORMALIZED DRAIN TO SOURCE ON RESISTANCE PULSE DURATION = 80μs DUTY CYCLE = 0.5% MAX TA = 25oC 8 VGS = 5V 6 VGS = 4.7V 4 VGS = 4.5V 2 PULSE DURATION = 80μs DUTY CYCLE = 0.5% MAX 2.0 1.5 1.0 0.5 VGS = 10V, ID = 4.4A 0 0 0 0.5 1.0 1.5 2.0 2.5 3.0 -80 -40 Figure 1. On-Region Characteristics 80 120 160 10 PULSE DURATION = 80μs DUTY CYCLE = 0.5% MAX VDD = 15V ID , DRAIN CURRENT (A) PULSE DURATION = 80μs DUTY CYCLE = 0.5% MAX rDS(ON), DRAIN TO SOURCE ON RESISTANCE (mΩ) 40 Figure 2. Normalized On-Resistance vs Junction Temperature 80 70 ID = 4.4A 60 ID = 0.2A 50 8 6 TJ = 150oC 4 TJ = -55oC TJ = 25oC 2 40 0 4 6 8 3.0 10 VGS, GATE TO SOURCE VOLTAGE (V) 3.5 4.0 4.5 5.0 5.5 6.0 VGS , GATE TO SOURCE VOLTAGE (V) Figure 3. On-Resistance vs Gate to Source Voltage Figure 4. Transfer Characteristics 1200 10 1000 VDD = 50V CISS = CGS + CGD 8 C, CAPACITANCE (pF) VGS , GATE TO SOURCE VOLTAGE (V) 0 TJ, JUNCTION TEMPERATURE (oC) VDS , DRAIN TO SOURCE VOLTAGE (V) 6 4 WAVEFORMS IN DESCENDING ORDER: ID = 4.4A ID = 1A 2 0 0 3 6 9 12 CRSS = CGD 100 VGS = 0V, f = 1MHz 10 15 0.1 Qg, GATE CHARGE (nC) 1 10 100 VDS , DRAIN TO SOURCE VOLTAGE (V) Figure 5. Gate Charge Characteristics FDM3622 Rev.C2 COSS ≅ CDS + CGD Figure 6. Capacitance vs Drain to Source Voltage 3 www.fairchildsemi.com FDM3622 N-Channel PowerTrench® MOSFET Typical Characteristics TJ = 25°C unless otherwise noted 20 IAS, AVALANCHE CURRENT (A) ID, DRAIN CURRENT (A) 100 rDS(on) LIMITED 10 100us 1 1ms 10ms 0.1 100ms SINGLE PULSE TJ = MAX RATED RθJA = 135oC/W 10 STARTING TJ = 25oC STARTING TJ = 150oC 1s TA = 25oC 0.01 0.1 If R = 0 tAV = (L)(IAS)/(1.3*RATED BVDSS - VDD) If R ≠ 0 tAV = (L/R)ln[(IAS*R)/(1.3*RATED BVDSS - VDD) +1] DC 1 10 100 VDS, DRAIN to SOURCE VOLTAGE (V) 1 400 0.001 0.1 1 10 100 tAV, TIME IN AVALANCHE (ms) Figure 7. Forward Bias Safe Operating Area Figure 8. Uncalamped Inductive Switching Capability 1.2 6 1.0 ID, DRAIN CURRENT (A) POWER DISSIPATION MULTIPLIER 0.01 0.8 0.6 0.4 VGS = 10V 4 2 0.2 0 0 0 25 50 75 100 125 150 25 50 TA , AMBIENT TEMPERATURE (oC) 100 125 150 Figure 10. Maximum Continuous Drain Current vs Ambient Temperature Figure 9. Normalized Power dissipation vs Ambient Temperature 1.2 NORMALIZED DRAIN TO SOURCE BREAKDOWN VOLTAGE 1.2 VGS = VDS, ID = 250μA NORMALIZED GATE THRESHOLD VOLTAGE 75 TA, AMBIENT TEMPERATURE (oC) 1.0 0.8 0.6 ID = 250μA 1.1 1.0 0.9 -80 -40 0 40 80 120 160 -80 TJ, JUNCTION TEMPERATURE (oC) 0 40 80 120 160 TJ , JUNCTION TEMPERATURE (oC) Figure 11. Normalized Gate Threshold voltage vs Junction Temperature FDM3622 Rev.C2 -40 Figure 12. Normalized Drain to Source Breakdown Voltage vs Junction Temperature 4 www.fairchildsemi.com FDM3622 N-Channel PowerTrench® MOSFET Typical Characteristics TJ = 25°C unless otherwise noted P(PK), PEAK TRANSIENT POWER (W) 500 VGS = 10V o TA = 25 C 100 FOR TEMPERATURES ABOVE 25oC DERATE PEAK SINGLE PULSE CURRENT AS FOLLOWS: o RθJA = 135 C/W I = I25 10 150 – T A -----------------------125 1 -4 10 -3 10 -2 10 -1 10 t, PULSE WIDTH (s) 0 1 10 2 10 3 10 10 Figure 13. Peak Current Capability NORMALIZED THERMAL IMPEDANCE, ZθJA 1 0.1 DUTY CYCLE-DESCENDING ORDER D = 0.5 0.2 0.1 0.05 0.02 0.01 PDM t1 t2 0.01 NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZθJA x RθJA + TA SINGLE PULSE o RθJA = 135 C/W 1E-3 -4 10 -3 10 -2 10 -1 0 10 10 t, RECTANGULAR PULSE DURATION(s) 1 10 2 10 3 10 Figure 14. Transient Thermal Response Curve FDM3622 Rev.C2 5 www.fairchildsemi.com FDM3622 N-Channel PowerTrench® MOSFET Typical Characteristics TJ = 25°C unless otherwise noted FDM3622 N-Channel PowerTrench® MOSFET Dimensional Outline and Pad Layout FDM3622 Rev.C2 6 www.fairchildsemi.com tm tm *Trademarks of System General Corporation, used under license by Fairchild Semiconductor. DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. 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PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative / In Design Datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. No Identification Needed Full Production Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve the design. Obsolete Not In Production Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only. Rev. I61 FDM3622 Rev. C2 7 www.fairchildsemi.com FDM3622 N-Channel PowerTrench® MOSFET TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. 2Cool™ PowerTrench® F-PFS™ The Power Franchise® ® AccuPower™ PowerXS™ FRFET® Global Power ResourceSM AX-CAP™* Programmable Active Droop™ ® ® Green Bridge™ BitSiC QFET TinyBoost™ Build it Now™ QS™ Green FPS™ TinyBuck™ CorePLUS™ Quiet Series™ Green FPS™ e-Series™ TinyCalc™ CorePOWER™ RapidConfigure™ Gmax™ TinyLogic® CROSSVOLT™ GTO™ ™ TINYOPTO™ CTL™ IntelliMAX™ TinyPower™ Current Transfer Logic™ Saving our world, 1mW/W/kW at a time™ ISOPLANAR™ TinyPWM™ DEUXPEED® Marking Small Speakers Sound Louder SignalWise™ TinyWire™ Dual Cool™ SmartMax™ and Better™ TranSiC® EcoSPARK® SMART START™ MegaBuck™ TriFault Detect™ EfficentMax™ Solutions for Your Success™ MICROCOUPLER™ TRUECURRENT®* SPM® ESBC™ MicroFET™ μSerDes™ STEALTH™ MicroPak™ ® SuperFET® MicroPak2™ ® SuperSOT™-3 MillerDrive™ Fairchild UHC® SuperSOT™-6 MotionMax™ Fairchild Semiconductor® Ultra FRFET™ SuperSOT™-8 Motion-SPM™ FACT Quiet Series™ UniFET™ SupreMOS® mWSaver™ FACT® VCX™ SyncFET™ OptoHiT™ FAST® ® VisualMax™ Sync-Lock™ OPTOLOGIC FastvCore™ ® VoltagePlus™ OPTOPLANAR ®* FETBench™ XS™ FlashWriter® * ® FPS™