Datasheet

AOD2606/AOI2606
60V N-Channel MOSFET
General Description
Product Summary
VDS
• Trench Power MV MOSFET technology
• Low RDS(ON)
• Low Gate Charge
• Optimized for fast-switching applications
Applications
ID (at VGS=10V)
60V
46A
RDS(ON) (at VGS=10V)
< 6.8mΩ
100% UIS Tested
100% Rg Tested
• Synchronous Rectification in DC/DC and AC/DC Converters
• Industrial and Motor Drive applications
TO-251A
IPAK
TO-252
DPAK
Top View
Top View
Bottom View
D
Bottom View
D
D
D
D
G
S
S
G
G
D
S
S
D
G
G
S
Orderable Part Number
Package Type
Form
Minimum Order Quantity
AOD2606
AOI2606
TO-252
TO-251A
Tape & Reel
Tube
2500
4000
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Drain-Source Voltage
Symbol
VDS
Gate-Source Voltage
C
C
Avalanche energy
L=0.1mH
VDS Spike
10µs
TC=25°C
Power Dissipation B
C
Junction and Storage Temperature Range
Thermal Characteristics
Parameter
A
Maximum Junction-to-Ambient
AD
Maximum Junction-to-Ambient
Maximum Junction-to-Case
Rev.1.0: December 2014
IAS
60
A
EAS
180
mJ
72
V
150
2.5
Steady-State
Steady-State
W
1.6
TJ, TSTG
Symbol
t ≤ 10s
W
75
PDSM
TA=70°C
A
11
PD
TA=25°C
Power Dissipation A
A
14
VSPIKE
TC=100°C
V
184
IDSM
TA=70°C
±20
36
IDM
TA=25°C
Continuous Drain
Current
Units
V
46
ID
TC=100°C
Pulsed Drain Current
Avalanche Current
VGS
TC=25°C
Continuous Drain
Current G
Maximum
60
RθJA
RθJC
°C
-55 to 175
Typ
16
41
0.8
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Max
20
50
1.0
Units
°C/W
°C/W
°C/W
Page 1 of 6
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
STATIC PARAMETERS
Drain-Source Breakdown Voltage
BVDSS
Conditions
Min
ID=250µA, VGS=0V
Typ
Zero Gate Voltage Drain Current
IGSS
VGS(th)
Gate-Body leakage current
VDS=0V, VGS=±20V
Gate Threshold Voltage
VDS=VGS, ID=250µA
V
1
TJ=55°C
2.5
VGS=10V, ID=20A
±100
nA
3.0
3.5
V
5.6
6.8
8.8
10.6
Static Drain-Source On-Resistance
gFS
Forward Transconductance
VDS=5V, ID=20A
75
VSD
Diode Forward Voltage
IS=1A,VGS=0V
0.7
IS
Maximum Body-Diode Continuous Current G
TJ=125°C
DYNAMIC PARAMETERS
Input Capacitance
Ciss
Output Capacitance
Crss
Reverse Transfer Capacitance
Rg
Gate resistance
µA
5
RDS(ON)
Coss
Units
60
VDS=60V, VGS=0V
IDSS
Max
S
1
V
46
A
4050
VGS=0V, VDS=30V, f=1MHz
f=1MHz
pF
345
pF
16.8
pF
0.65
1.0
Ω
SWITCHING PARAMETERS
Qg(10V)
Total Gate Charge
53
75
nC
Qg(4.5V)
Total Gate Charge
22
31
Qgs
Gate Source Charge
Qgd
tD(on)
tr
Turn-On Rise Time
tD(off)
Turn-Off DelayTime
tf
trr
Turn-Off Fall Time
Qrr
VGS=10V, VDS=30V, ID=20A
0.3
mΩ
nC
17
nC
Gate Drain Charge
5
nC
Turn-On DelayTime
18
ns
20
ns
VGS=10V, VDS=30V, RL=1.5Ω,
RGEN=3Ω
33
ns
4
ns
IF=20A, dI/dt=500A/µs
26
Body Diode Reverse Recovery Charge IF=20A, dI/dt=500A/µs
125
ns
nC
Body Diode Reverse Recovery Time
A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The
Power dissipation PDSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any given application depends
on the user's specific board design, and the maximum temperature of 175°C may be used if the PCB allows it.
B. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Single pulse width limited by junction temperature TJ(MAX)=175°C.
D. The RθJA is the sum of the thermal impedance from junction to case RθJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming
a maximum junction temperature of TJ(MAX)=175°C. The SOA curve provides a single pulse rating.
G. The maximum current rating is package limited.
H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C.
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev.1.0: December 2014
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Page 2 of 6
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
120
10V
120
6V
VDS=5V
100
100
80
80
ID(A)
ID (A)
5V
60
40
60
40
4.5V
125°C
20
20
25°C
VGS=4V
0
0
0
1
2
3
4
2
5
3
5
6
VGS(Volts)
Figure 2: Transfer Characteristics (Note E)
VDS (Volts)
Figure 1: On-Region Characteristics (Note E)
10
Normalized On-Resistance
2
8
RDS(ON) (mΩ)
4
6
VGS=10V
4
2
1.8
VGS=10V
ID=20A
1.6
1.4
1.2
1
0.8
0
0
5
10
15
20
25
0
30
25
50
75
100
125
150
175
200
Temperature (°C)
Figure 4: On-Resistance vs. Junction Temperature
(Note E)
ID (A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage (Note E)
16
1.0E+02
ID=20A
14
1.0E+01
125°C
1.0E+00
125°C
10
IS (A)
RDS(ON) (mΩ)
12
8
1.0E-01
25°C
1.0E-02
6
1.0E-03
25°C
4
1.0E-04
2
1.0E-05
2
4
6
8
10
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note E)
Rev.1.0: December 2014
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0.0
0.2
0.4
0.6
0.8
1.0
1.2
VSD (Volts)
Figure 6: Body-Diode Characteristics (Note E)
Page 3 of 6
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
5000
VDS=30V
ID=20A
Ciss
4000
Capacitance (pF)
VGS (Volts)
8
6
4
2
3000
2000
1000
Coss
Crss
0
0
0
10
20
30
40
50
60
0
Qg (nC)
Figure 7: Gate-Charge Characteristics
30
40
50
60
500
TJ(Max)=175°C
TC=25°C
10µs
10µs
RDS(ON)
limited
400
100µs
10.0
Power (W)
100.0
ID (Amps)
20
VDS (Volts)
Figure 8: Capacitance Characteristics
1000.0
1ms
10ms
DC
1.0
TJ(Max)=175°C
TC=25°C
0.1
0.0
0.01
300
200
100
0.1
1
10
VDS (Volts)
100
0
0.0001 0.001 0.01
1000
0.1
1
10
100
1000
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-toCase (Note F)
VGS> or equal to 4.5V
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
10
ZθJC Normalized Transient
Thermal Resistance
10
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
D=Ton/T
TJ,PK=TC+PDM.ZθJC.RθJC
RθJC=1.0°C/W
1
0.1
PDM
Single Pulse
Ton
T
0.01
1E-05
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
Rev.1.0: December 2014
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Page 4 of 6
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
200
TA=25°C
TA=100°C
Power Dissipation (W)
IAR (A) Peak Avalanche Current
1000
100
TA=150°C
TA=125°C
10
1
150
100
50
0
1
10
100
1000
0
25
75
100
125
150
TCASE (°C)
Figure 13: Power De-rating (Note F)
Time in avalanche, tA (µs)
Figure 12: Single Pulse Avalanche capability
(Note C)
50
175
10000
60
TA=25°C
50
Power (W)
Current rating ID(A)
1000
40
30
100
20
10
10
0
0
25
50
75
100
125
150
175
1
1E-05
0.1
10
1000
Pulse Width (s)
Figure 15: Single Pulse Power Rating Junction-toAmbient (Note H)
TCASE (°C)
Figure 14: Current De-rating (Note F)
ZθJA Normalized Transient
Thermal Resistance
0.001
10
1
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
RθJA=50°C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
0.1
PD
0.01
Single Pulse
Ton
0.001
0.0001
0.001
0.01
0.1
1
10
T
100
1000
Pulse Width (s)
Figure 16: Normalized Maximum Transient Thermal Impedance (Note H)
Rev.1.0: December 2014
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Page 5 of 6
Gate Charge Test Circuit & Waveform
Vgs
Qg
10V
+
+ Vds
VDC
-
Qgs
Qgd
VDC
-
DUT
Vgs
Ig
Charge
Resistive Switching Test Circuit & Waveforms
RL
Vds
Vds
DUT
Vgs
90%
+ Vdd
VDC
-
Rg
10%
Vgs
Vgs
td(on)
tr
td(off)
ton
tf
toff
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
L
2
EAR= 1/2 LIAR
Vds
BVDSS
Vds
Id
+ Vdd
Vgs
Vgs
I AR
VDC
-
Rg
Id
DUT
Vgs
Vgs
Diode Recovery Test Circuit & Waveforms
Q rr = - Idt
Vds +
DUT
Vds -
Isd
Vgs
Ig
Rev.1.0: December 2014
Vgs
L
Isd
+ Vdd
t rr
dI/dt
I RM
Vdd
VDC
-
IF
Vds
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Page 6 of 6