Datasheet

AOT270AL/AOB270AL
75V N-Channel MOSFET
General Description
Product Summary
The AOT270AL/AOB270AL uses Trench MOSFET
technology that is uniquely optimized to provide the most
efficient high frequency switching performance. Both
conduction and switching power losses are minimized due
to an extremely low combination of RDS(ON), Ciss and Coss.
This device is ideal for boost converters and synchronous
rectifiers for consumer, telecom, industrial power supplies
and LED backlighting.
VDS
ID (at VGS=10V)
75V
140A
RDS(ON) (at VGS=10V)
< 2.6mΩ
(< 2.4mΩ )
RDS(ON) (at VGS=6V)
< 3.2mΩ
(< 3.0mΩ ∗)
∗
100% UIS Tested
100% Rg Tested
TO-263
TO220
Top View
Bottom
Top View
D
Bottom View
D
D
D
G
D
S
S
D
D
G
G
S
G
G
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
TC=25°C
Continuous Drain
Current G
Pulsed Drain Current
Avalanche Current
C
C
Avalanche energy L=0.1mH
TC=25°C
Power Dissipation
B
Power Dissipation
A
TA=25°C
Junction and Storage Temperature Range
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A D
Maximum Junction-to-Case
* Surface mount package TO263
Rev 0 : Dec. 2012
Steady-State
Steady-State
A
IAS
120
A
EAS
720
mJ
500
W
250
2.1
RθJA
RθJC
W
1.3
TJ, TSTG
Symbol
t ≤ 10s
A
17
PDSM
TA=70°C
V
21.5
PD
TC=100°C
±20
560
IDSM
TA=70°C
Units
V
110
IDM
TA=25°C
Continuous Drain
Current
Maximum
75
140
ID
TC=100°C
C
S
S
°C
-55 to 175
Typ
12
50
0.25
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Max
15
60
0.3
Units
°C/W
°C/W
°C/W
Page 1 of 6
AOT270AL/AOB270AL
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
STATIC PARAMETERS
Drain-Source Breakdown Voltage
BVDSS
IDSS
Min
ID=250µA, VGS=0V
Zero Gate Voltage Drain Current
Gate-Body leakage current
VDS=0V, VGS=±20V
Gate Threshold Voltage
VDS=VGS ID=250µA
2.2
ID(ON)
On state drain current
VGS=10V, VDS=5V
560
VGS=10V, ID=20A
TJ=125°C
VGS=6V, ID=20A
TO220
VGS=10V, ID=20A
TO263
TJ=125°C
VGS=6V, ID=20A
gFS
Forward Transconductance
TO263
VDS=5V, ID=20A
VSD
Diode Forward Voltage
IS=1A,VGS=0V
IS
Maximum Body-Diode Continuous Current G
Output Capacitance
Crss
Reverse Transfer Capacitance
Rg
Gate resistance
±100
nA
2.7
3.3
V
2.15
2.6
3.25
4
2.55
3.2
1.95
2.4
3.0
3.8
2.35
3.0
A
0.66
VGS=0V, VDS=0V, f=1MHz
VGS=10V, VDS=37.5V, ID=20A
Gate Source Charge
0.3
mΩ
S
1
V
140
A
10830
VGS=0V, VDS=37.5V, f=1MHz
SWITCHING PARAMETERS
Qg
Total Gate Charge
Qgs
µA
80
DYNAMIC PARAMETERS
Ciss
Input Capacitance
Coss
V
5
IGSS
Static Drain-Source On-Resistance
Units
1
TJ=55°C
TO220
Max
75
VDS=75V, VGS=0V
VGS(th)
RDS(ON)
Typ
pF
1520
pF
97
pF
0.75
1.2
Ω
147
206
nC
38.5
nC
Qgd
Gate Drain Charge
30
nC
tD(on)
Turn-On DelayTime
30
ns
tr
Turn-On Rise Time
20
ns
tD(off)
Turn-Off DelayTime
66
ns
tf
Turn-Off Fall Time
18
ns
trr
Body Diode Reverse Recovery Time
IF=20A, dI/dt=500A/µs
53
Qrr
Body Diode Reverse Recovery Charge IF=20A, dI/dt=500A/µs
438
ns
nC
VGS=10V, VDS=37.5V, RL=1.9Ω,
RGEN=3Ω
A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The
Power dissipation PDSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any given application
depends on the user's specific board design, and the maximum temperature of 175°C may be used if the PCB allows it.
B. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175°C. Ratings are based on low frequency and duty cycles to keep
initial TJ =25°C.
D. The RθJA is the sum of the thermal impedance from junction to case RθJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink,
assuming a maximum junction temperature of TJ(MAX)=175°C. The SOA curve provides a single pulse rating.
G. The maximum current limited by package is 140A.
H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C.
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev 0 : Dec. 2012
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Page 2 of 6
AOT270AL/AOB270AL
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
100
100
10V
VDS=5V
4.5V
80
80
6V
60
ID(A)
ID (A)
60
40
40
125°C
4V
20
25°C
20
Vgs=3.5V
0
0
0
1
2
3
4
5
2
VDS (Volts)
Fig 1: On-Region Characteristics (Note E)
8
3
3.5
4
4.5
VGS(Volts)
Figure 2: Transfer Characteristics (Note E)
5
Normalized On-Resistance
2
6
RDS(ON) (mΩ
Ω)
2.5
4
VGS=6V
2
VGS=10V
0
1.8
VGS=10V
ID=20A
1.6
1.4
1.2
VGS=6V
ID=20A
1
0.8
0
5
10
15
20
25
30
ID (A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage (Note E)
0
5
25
50
75
100 125 150 175 200
Temperature (°C)
Figure 4: On-Resistance vs. Junction Temperature
(Note E)
1.0E+02
ID=20A
1.0E+01
4
125°C
IS (A)
RDS(ON) (mΩ
Ω)
1.0E+00
3
125°C
1.0E-01
25°C
1.0E-02
2
25°C
1.0E-03
1
1.0E-04
0
1.0E-05
2
6
8
10
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note E)
Rev 0 : Dec. 2012
4
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0.0
0.2
0.4
0.6
0.8
1.0
1.2
VSD (Volts)
Figure 6: Body-Diode Characteristics (Note E)
Page 3 of 6
AOT270AL/AOB270AL
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
12000
VDS=37.5V
ID=20A
10000
Capacitance (pF)
VGS (Volts)
8
6
4
2
Ciss
8000
6000
Coss
4000
Crss
2000
0
0
0
30
60
90
120
Qg (nC)
Figure 7: Gate-Charge Characteristics
150
0
25
50
VDS (Volts)
Figure 8: Capacitance Characteristics
5000
1000.0
TJ(Max)=175°C
TC=25°C
10µs
RDS(ON)
limited
10µs
100µs
10.0
DC
1.0
4000
1ms
10ms
Power (W)
100.0
ID (Amps)
75
TJ(Max)=175°C
TC=25°C
0.1
17
5
2
10
3000
2000
1000
0.0
0
0.01
0.1
1
10
VDS (Volts)
100
1000
0.0001
0.001
0.01
0.1
1
10
0
Pulse Width (s)
18 Junction-toFigure 10: Single Pulse Power Rating
Case (Note F)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
Zθ JC Normalized Transient
Thermal Resistance
10
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
D=Ton/T
TJ,PK=TC+PDM.ZθJC.RθJC
1
40
RθJC=0.3°C/W
PD
0.1
Single Pulse
Ton
T
0.01
0.00001
0.0001
0.001
0.01
0.1
1
10
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
Rev 0 : Dec. 2012
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Page 4 of 6
AOT270AL/AOB270AL
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
600
TA=100°C
TA=25°C
100
500
Power Dissipation (W)
IAR (A) Peak Avalanche Current
1000
TA=150°C
TA=125°C
400
300
200
100
10
0
1
10
100
1000
Time in avalanche, tA (µ
µs)
Figure 12: Single Pulse Avalanche capability
(Note C)
150
0
25
50
75
100
125
150
TCASE (°C)
Figure 13: Power De-rating (Note F)
175
10000
TA=25°C
1000
Power (W)
Current rating ID(A)
120
90
60
100
10
30
0
1
0
Zθ JA Normalized Transient
Thermal Resistance
10
1
25
50
75
100
125
150
TCASE (°C)
Figure 14: Current De-rating (Note F)
175
0.001
0.1
10
1000
Pulse Width (s)
Figure 15: Single Pulse Power Rating Junction-toAmbient (Note H)
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
RθJA=60°C/W
0.1
0.01
PD
0.001
Ton
T
Single Pulse
0.0001
0.0001
0.001
0.01
0.1
1
10
100
1000
10000
Pulse Width (s)
Figure 16: Normalized Maximum Transient Thermal Impedance (Note H)
Rev 0 : Dec. 2012
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Page 5 of 6
AOT270AL/AOB270AL
Gate Charge Test Circuit & Waveform
Vgs
Qg
10V
+
+ Vds
VDC
-
Qgs
Qgd
VDC
-
DUT
Vgs
Ig
Charge
Resistive Switching Test Circuit & Waveforms
RL
Vds
Vds
90%
+ Vdd
DUT
Vgs
VDC
-
Rg
10%
Vgs
Vgs
t d(on)
tr
t d(off)
t on
tf
toff
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
L
2
E AR = 1/2 LIAR
Vds
BVDSS
Vds
Id
+ Vdd
Vgs
Vgs
I AR
VDC
-
Rg
Id
DUT
Vgs
Vgs
Diode Recovery Test Circuit & Waveforms
Q rr = - Idt
Vds +
DUT
Vds Isd
Vgs
Ig
Rev 0 : Dec. 2012
Vgs
L
Isd
+ Vdd
t rr
dI/dt
I RM
Vdd
VDC
-
IF
Vds
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Page 6 of 6