UNISONIC TECHNOLOGIES CO., LTD MPSA13 NPN EPITAXIAL SILICON TRANSISTOR DARLINGTON TRANSISTOR DESCRIPTION The UTC MPSA13 is a Darlington transistor. FEATURES * Collector-Emitter Voltage: VCES = 30V ORDERING INFORMATION Order Number Package Lead Free Halogen Free MPSA13G-AB3-A-R SOT-89 MPSA13G-AB3-F-R SOT-89 MPSA13L-T92-B MPSA13G-T92-B TO-92 MPSA13L-T92-K MPSA13G-T92-K TO-92 MPSA13L-T92-A-B MPSA13G-T92-A-B TO-92 MPSA13L-T92-A-K MPSA13G-T92-A-K TO-92 Note: Pin assignment: E: Emitter C: Collector B: Base 1 E B E E E E Pin Assignment 2 3 C B C E B C B C C B C B Packing Tape Reel Tape Reel Tape Box Bulk Tape Box Bulk MPSA13L-T92-A-B (1)Packing Type (1) B: Tape Box, K: Bulk, R: Tape Reel (2)Pin Assignment (2) refer to Pin Assignment (3)Package Type (3) AB3: SOT-89, T92: TO-92 (4)Green Package (4) L: Lead Free, G: Halogen Free MARKING SOT-89 TO-92 Pin Code MPSA13G Date Code 1 www.unisoniC.Com.tw Copyright © 2015 UnisoniC Technologies Co., Ltd. 1 of 3 QW-R208-001.G MPSA13 NPN EPITAXIAL SILICON TRANSISTOR ABSOLUTE MAXIMUM RATING (TA=25°C, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Collector-Base Voltage VCBO 30 V Collector-Emitter Voltage VCES 30 V Emitter-Base Voltage VEBO 10 V Collector Current IC 500 mA Collector Dissipation PC 625 mW Junction Temperature TJ 150 °C Storage Temperature TSTG -55 ~ +150 °C Note: Absolute maximum ratings are those values beyond which the device Could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. ELECTRICAL CHARACTERISTICS (TA=25°C, unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS Collector-Emitter Breakdown Voltage BVCES IC=100μA, IB=0 Collector Cut-Off Current ICBO VCB=30V, IE=0 Emitter Cut-Off Current IEBO VEB=10V, IC=0 DC Current Gain hFE VCE=5V, IC=100mA Collector-Emitter Saturation Voltage VCE(SAT) IC=100mA, IB=0.1mA Base-Emitter on Voltage VBE(ON) VCE=5V, IC=100mA Current Gain Bandwidth Product fT VCE=5V, IC=10mA, f=100MHz Note: Pulse test: Pulse Width ≤ 300μs, Duty Cycle=2% UNISONIC TECHNOLOGIES CO., LTD www.unisoniC.Com.tw MIN 30 TYP MAX 100 100 UNIT V nA nA 10000 1.5 2.0 125 V V MHz 2 of 3 QW-R208-001.G MPSA13 Rd s( ) on Li m it Collector power dissipation,PC(W) TYPICAL CHARACTERISTICS Collector current, Ic (mA) NPN EPITAXIAL SILICON TRANSISTOR UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisoniC.Com.tw 3 of 3 QW-R208-001.G