UTC MPSA13 NPN EPITAXIAL SILICON TRANSISTOR DARLINGTON TRANSISTOR DESCRIPTION The UTC MPSA13 is a Darlington transistor. 1 FEATURES *Collector-Emitter Voltage: VCES = 30V *Collector Dissipation: Pc (mas) = 625 mW SOT-89 1: EMITTER 2: COLLECTOR 3: BASE ABSOLUTE MAXIMUM RATINGS (Ta=25°C) PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Dissipation Collector Current Junction Temperature Storage Temperature SYMBOL VALUE UNIT VCBO VCES VEBO Pc Ic Tj TSTG 30 30 10 625 500 150 -55 ~ +150 V V V mW mA °C °C ELECTRICAL CHARACTERISTICS (Ta=25°C, unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS MIN BVCES ICBO IEBO hFE VCE(sat) VBE(on) fT Ic=100µA,IB=0 VCB=30V,IE=0 VEB=10V,Ic=0 VCE=5V,Ic=100mA Ic=100mA,IB=0.1mA VCE=5V,Ic=100mA VCE=5V,Ic=10mA, f=100MHz 30 Collector-Emitter Breakdown Voltage Collector Cut-Off Current Emitter Cut-Off Current DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter on Voltage Current Gain Bandwidth Product MAX UNIT 100 100 V nA nA 10000 1.5 2.0 125 V V MHz Pulse test: Pulse Width<300µs, Duty Cycle=2% UTC UNISONIC TECHNOLOGIES CO., LTD. 1 QW-R208-001,B UTC MPSA13 NPN EPITAXIAL SILICON TRANSISTOR TYPICAL CHARACTERISTICS Current Gain & Collector Current Saturation Voltage & Collector Current 1000k 10000 Saturation Voltage (mV) hFE I(tot) mA hFE@VCE=5V 100k 10k 0.1 1 10 100 Collector Current (mA) I(tot) mA VBE(sat)@IC=100IB 1000 VCE(sat)@IC=100IB 100 1 1000 10 1000 VBE(on)@VCE=5V 100 0.1 1 10 100 Collector Current (mA) Capacitance (pF) On Voltage (mV) I(tot) mA I(tot) mA Cutoff Frequency & Collector Current Collector Current -Ic (mA) VCE=5V 100 UTC 10 100 Collector Current (mA) 1 1000 I(tot) mA 1 Cob 1 1000 1000 10 1000 Capacitance & Reverse-Biased Voltage On Voltage & Collector Current 10000 Cutoff Frequency (MHz) 10 100 Collector Current (mA) 1000 100 10 Reverse-Biased Voltage(V) 100 Safe Operating Area I(tot) mA PT=1s PT=100ms PT=1ms 10 1 1 10 Forward Voltage-V CE(V) 100 UNISONIC TECHNOLOGIES CO., LTD. 2 QW-R208-001,B UTC MPSA13 NPN EPITAXIAL SILICON TRANSISTOR Power-Dissipation vs Ambient Temperature PD-Power Dissipation(W) 1 I(tot) mA 0.75 0.5 0.25 0 0 25 50 75 100 Temperature (℃) 125 150 UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UTC UNISONIC TECHNOLOGIES CO., LTD. 3 QW-R208-001,B