HGTG30N120D2 30A, 1200V N-Channel IGBT April 1995 Features Package • 30A, 1200V JEDEC STYLE TO-247 • Latch Free Operation EMITTER COLLECTOR • Typical Fall Time - 580ns GATE • High Input Impedance COLLECTOR (BOTTOM SIDE METAL) • Low Conduction Loss Description The HGTG30N120D2 is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. The device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between +25oC and +150oC. Terminal Diagram N-CHANNEL ENHANCEMENT MODE The IGBTs are ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as: AC and DC motor controls, power supplies and drivers for solenoids, relays and contactors. C PACKAGING AVAILABILITY PART NUMBER PACKAGE HGTG30N120D2 TO-247 G BRAND G30N120D2 E Formerly Developmental Type TA49010 Absolute Maximum Ratings TC = +25oC, Unless Otherwise Specified Collector-Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . BVCES Collector-Gate Voltage, RGE =1MΩ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VCGR Collector Current Continuous at TC = +25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IC25 at VGE =15V at TC = +90oC . . . . . . . . . . . . . . . . . . . . IC90 Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ICM Gate-Emitter Voltage Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGES Gate-Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGEM Switching Safe Operating Area at TJ = +150oC . . . . . . . . . . . . . . . . . . . . . . . . . . . .SSOA Power Dissipation Total at TC = +25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD Power Dissipation Total Derating TC > +25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . . TJ, TSTG Maximum Lead Temperature for Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL Short Circuit Withstand Time (Note 2) at VGE = 15V . . . . . . . . . . . . . . . . . . . . . . . . . tSC at VGE = 10V . . . . . . . . . . . . . . . . . . . . . . . . . tSC NOTES: 1. Repetitive Rating: Pulse width limited by maximum junction temperature. 2. VCE(PEAK) = 720V, TC = +125oC, RGE = 25Ω. HGTG30N120D2 1200 1200 50 30 200 ±20 ±30 200A at 0.8 BVCES 208 1.67 -55 to +150 260 6 15 UNITS V V A A A V V W W/oC oC oC µS µS HARRIS SEMICONDUCTOR IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS: 4,364,073 4,587,713 4,641,162 4,794,432 4,860,080 4,969,027 4,417,385 4,598,461 4,644,637 4,801,986 4,883,767 4,430,792 4,605,948 4,682,195 4,803,533 4,888,627 4,443,931 4,618,872 4,684,413 4,809,045 4,890,143 4,466,176 4,620,211 4,694,313 4,809,047 4,901,127 CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures. http://www.intersil.com or 407-727-9207 | Copyright © Intersil Corporation 1999 3-111 4,516,143 4,631,564 4,717,679 4,810,665 4,904,609 4,532,534 4,639,754 4,743,952 4,823,176 4,933,740 4,567,641 4,639,762 4,783,690 4,837,606 4,963,951 File Number 2834.2 Specifications HGTG30N120D2 Electrical Specifications TC = +25oC, Unless Otherwise Specified LIMITS PARAMETERS SYMBOL TEST CONDITIONS TYP MAX UNITS 1200 - - V TC = +25oC - - 1.0 mA TC = +125oC - - 4.0 mA IC = IC90, VGE = 15V TC = +25oC - 3.0 3.5 V TC = +125oC - 3.2 3.5 V IC = IC90, VGE = 10V TC = +25oC - 3.2 3.8 V TC = +125oC - 3.4 3.8 V VGE(TH) VGE = VCE, IC = 1mA +25oC 3.0 4.5 6.0 V Gate-Emitter Leakage Current IGES VGE = ±20V - - ±500 nA Gate-Emitter Plateau Voltage VGEP IC = IC90, VCE = 0.5 BVCES - 7.3 - V IC = IC90, VCE = 0.5 BVCES VGE = 15V - 185 240 nC VGE = 20V - 240 315 nC L = 50µH, IC = IC90, RG = 25Ω, VGE = 15V, TJ = +125oC, VCE = 0.8 BVCES - 100 - ns - 150 - ns tD(OFF)I - 760 990 ns tFI - 580 750 ns - 8.4 - mJ - 100 - ns - 150 - ns tD(OFF)I - 610 790 ns tFI - 580 750 ns WOFF - 8.4 - mJ 0.6 oC/W Collector-Emitter Breakdown Voltage BVCES Zero Gate Voltage Collector Current ICES IC = 250µA, VGE = 0V MIN VCE = BVCES VCE = 0.8 BVCES Collector-Emitter Saturation Voltage VCE(SAT) Gate-Emitter Threshold Voltage On-State Gate Charge QG(ON) Current Turn-On Delay Time tD(ON)I Current Rise Time tRI Current Turn-Off Delay Time Current Fall Time Turn-Off Energy (Note 1) WOFF Current Turn-On Delay Time tD(ON)I Current Rise Time tRI Current Turn-Off Delay Time Current Fall Time Turn-Off Energy (Note 1) Thermal Resistance Junction-to-Case TC = L = 50µH, IC = IC90, RG = 25Ω, VGE = 10V, TJ = +125oC, VCE = 0.8 BVCES RθJC - 0.5 NOTE: 1. Turn-Off Energy Loss (WOFF) is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse and ending at the point where the collector current equals zero (ICE = 0A) The HGTG20N100D2 was tested per JEDEC standard No. 24-1 Method for Measurement of Power Device Turn-Off Switching Loss. This test method produces the true total Turn-Off Energy Loss. Typical Performance Curves PULSE DURATION = 250µs DUTY CYCLE < 0.5%, TC = +25oC PULSE DURATION = 250µs DUTY CYCLE < 0.5%, VCE = 10V 90 ICE, COLLECTOR-EMITTER CURRENT (A) ICE, COLLECTOR-EMITTER CURRENT (A) 100 80 70 60 50 TC = +150oC 40 30 TC = +25oC 20 10 TC = -40oC 0 0 2 4 6 8 10 100 VGE = 15V 90 VGE = 10V 80 VGE = 8V 70 60 VGE = 7.5V 50 40 30 VGE = 6.0V 20 VGE = 6.5V 10 0 0 VGE, GATE-TO-EMITTER VOLTAGE (V) FIGURE 1. TRANSFER CHARACTERISTICS (TYPICAL) VGE = 7.0V 2 4 6 8 VCE, COLLECTOR-TO-EMITTER VOLTAGE (V) 10 FIGURE 2. SATURATION CHARACTERISTICS (TYPICAL) 3-112 HGTG30N120D2 Typical Performance Curves (Continued) ICE, DC COLLECTOR CURRENT (A) 50 2.0 VGE = 15V VGE =10V AND 15V, TJ = +150oC, RG = 25Ω, L = 50µH 40 1.5 30 VCE = 480V tFI , FALL TIME (µs) VGE = 10V 20 1.0 VCE = 960V 0.5 10 0 0.0 +50 +75 +100 +125 +150 1 10 TC , CASE TEMPERATURE (oC) FIGURE 3. DC COLLECTOR CURRENT vs CASE TEMPERATURE FIGURE 4. FALL TIME vs COLLECTOR-EMITTER CURRENT 10000 VCE, COLLECTOR-EMITTER VOLTAGE (V) 1000 f = 1MHz 8000 C, CAPACITANCE (pF) 100 ICE, COLLECTOR-EMITTER CURRENT (A) CISS 6000 4000 COSS 2000 CRSS RL = 29Ω IG(REF) = 1.8mA VCC = BVCES GATEEMITTER VOLTAGE 750 VGE = 10V VCC = BVCES 500 5 0.75 BVCES 0.75 BVCES 0.50 BVCES 0.50 BVCES 0.25 BVCES 0.25 BVCES 250 COLLECTOR-EMITTER VOLTAGE 0 0 0 0 5 10 15 20 20 25 VCE, COLLECTOR-TO-EMITTER VOLTAGE (V) FIGURE 5. CAPACITANCE vs COLLECTOR-EMITTER VOLTAGE TJ = VCE(ON), SATURATION VOLTAGE (V) 7 WOFF , TURN-OFF SWITCHING LOSS (mJ) 100 VGE = 10V 6 5 4 VGE = 15V 3 2 1 IG(REF) IG(ACT) TIME (µs) 80 IG(REF) IG(ACT) FIGURE 6. NORMALIZED SWITCHING WAVEFORMS AT CONSTANT GATE CURRENT (REFER TO APPLICATION NOTES AN7254 AND AN7260) 8 +150oC 10 VGE, GATE-EMITTER VOLTAGE (V) +25 TJ = +150oC, RG = 25Ω, L = 50µH VCE = 960V, VGE = 10V, 15V 10 1.0 VCE = 480V, VGE = 10V, 15V 0.1 0 1 10 1 100 10 100 ICE, COLLECTOR-EMITTER CURRENT (A) ICE, COLLECTOR-EMITTER CURRENT (A) FIGURE 7. SATURATION VOLTAGE vs COLLECTOR-EMITTER CURRENT 3-113 FIGURE 8. TURN-OFF SWITCHING LOSS vs COLLECTOREMITTER CURRENT HGTG30N120D2 Typical Performance Curves (Continued) 2.0 100 fOP , OPERATING FREQUENCY (kHz) VGE = 15V, RG = 50Ω tD(OFF)I , TURN-OFF DELAY (µs) VGE = 10V, RG = 50Ω VGE = 15V, RG = 25Ω 1.5 VGE = 10V, RG = 25Ω 1.0 TJ = +150oC 0.5 VCE = 960V L = 50µH VCE = 480V fMAX1 = 0.05/tD(OFF)I fMAX2 = (PD - PC)/WOFF PC = DUTY FACTOR = 50% RθJC = 0.5oC/W 10 VCE = 960V TJ = +150oC, TC = +75oC, VGE = 15V RG = 25Ω, L = 50µH 1 1 0.0 1 10 10 NOTE: PD = ALLOWABLE DISSIPATION 100 ICE, COLLECTOR-EMITTER CURRENT (A) FIGURE 9. TURN-OFF DELAY vs COLLECTOR-EMITTER CURRENT ICE, COLLECTOR-EMITTER CURRENT (A) VGE = 10V TJ = +150oC TJ = +25oC 1 1 0 2 3 4 5 6 7 8 VCE(ON), SATURATION VOLTAGE (V) FIGURE 11. COLLECTOR-EMITTER SATURATION VOLTAGE Test Circuit L = 25µH 1/RG = 1/RGEN + 1/RGE VCC 960V RGEN = 50Ω 20V 0V PC = CONDUCTION DISSIPATION FIGURE 10. OPERATING FREQUENCY vs COLLECTOREMITTER CURRENT AND VOLTAGE 100 10 70 ICE, COLLECTOR-EMITTER CURRENT (A) RGE = 50Ω FIGURE 12. INDUCTIVE SWITCHING TEST CIRCUIT 3-114 + - HGTG30N120D2 Operating Frequency Information Operating frequency information for a typical device (Figure 10) is presented as a guide for estimating device performance for a specific application. Other typical frequency vs collector current (ICE) plots are possible using the information shown for a typical unit in Figures 7, 8 and 9. The operating frequency plot (Figure 10) of a typical device shows fMAX1 or fMAX2 whichever is smaller at each point. The information is based on measurements of a typical device and is bounded by the maximum rated junction temperature. fMAX1 is defined by fMAX1 = 0.05/tD(OFF)I. tD(OFF)I deadtime (the denominator) has been arbitrarily held to 10% of the onstate time for a 50% duty factor. Other definitions are possible. tD(OFF)I is defined as the time between the 90% point of the trailing edge of the input pulse and the point where the collector current falls to 90% of its maximum value. Device turn-off delay can establish an additional frequency limiting condition for an application other than TJMAX. tD(OFF)I is important when controlling output ripple under a lightly loaded condition. fMAX2 is defined by fMAX2 = (PD - PC)/WOFF. The allowable dissipation (PD) is defined by PD = (TJMAX - TC)/RθJC. The sum of device switching and conduction losses must not exceed PD. A 50% duty factor was used (Figure 10) and the conduction losses (PC) are approximated by PC = (VCE • ICE)/2. WOFF is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse and ending at the point where the collector current equals zero (ICE = 0A). The switching power loss (Figure 10) is defined as fMAX2 • WOFF. Turn-on switching losses are not included because they can be greatly influenced by external circuit conditions and components. All Intersil semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certification. Intersil products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time without notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries. 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