INTERSIL HGTP12N60D1

HGTP12N60D1
12A, 600V N-Channel IGBT
April 1995
Features
Package
• 12A, 600V
JEDEC TO-220AB
• Latch Free Operation
EMITTER
COLLECTOR
• Typical Fall Time <500ns
GATE
• High Input Impedance
COLLECTOR
(FLANGE)
• Low Conduction Loss
Description
The IGBT is a MOS gated high voltage switching device
combining the best features of MOSFETs and bipolar
transistors. The device has the high input impedance of a
MOSFET and the low on-state conduction loss of a bipolar
transistor. The much lower on-state voltage drop varies only
moderately between +25oC and +150oC.
Terminal Diagram
N-CHANNEL ENHANCEMENT MODE
C
The IGBTs are ideal for many high voltage switching applications operating at frequencies where low conduction losses
are essential, such as: AC and DC motor controls, power
supplies and drivers for solenoids, relays and contactors.
G
PACKAGING AVAILABILITY
PART NUMBER
HGTP12N60D1
PACKAGE
TO-220AB
Absolute Maximum Ratings
E
BRAND
G12N60D1
TC = +25oC, Unless Otherwise Specified
Collector-Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . BVCES
Collector-Gate Voltage RGE = 1MΩ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . BVCGR
Collector Current Continuous at TC = +25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IC25
at VGE = 15V at TC = +90oC . . . . . . . . . . . . . . . . . . . IC90
Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ICM
Gate-Emitter Voltage Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGES
Switching Safe Operating Area at TJ = +150oC . . . . . . . . . . . . . . . . . . . . . . . . . . . .SSOA
Power Dissipation Total at TC = +25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD
Power Dissipation Derating TC > +25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . . TJ, TSTG
Maximum Lead Temperature for Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL
HGTP12N60D1
600
600
21
12
48
±25
30A at 0.8 BVCES
75
0.6
-55 to +150
260
UNITS
V
V
A
A
A
V
W
W/oC
oC
oC
NOTE:
1. Repetitive Rating: Pulse width limited by maximum junction temperature.
INTERSIL VmCORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS:
4,364,073
4,587,713
4,641,162
4,794,432
4,860,080
4,969,027
4,417,385
4,598,461
4,644,637
4,801,986
4,883,767
4,430,792
4,605,948
4,682,195
4,803,533
4,888,627
4,443,931
4,618,872
4,684,413
4,809,045
4,890,143
4,466,176
4,620,211
4,694,313
4,809,047
4,901,127
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
http://www.intersil.com or 407-727-9207 | Copyright © Intersil Corporation 1999
3-38
4,516,143
4,631,564
4,717,679
4,810,665
4,904,609
4,532,534
4,639,754
4,743,952
4,823,176
4,933,740
4,567,641
4,639,762
4,783,690
4,837,606
4,963,951
File Number
2830.3
Specifications HGTP12N60D1
Electrical Specifications TC = +25oC, Unless Otherwise Specified
LIMITS
PARAMETERS
SYMBOL
Collector-Emitter Breakdown Voltage
IC = 250µA, VGE = 0V
BVCES
Collector-Emitter Leakage Voltage
TEST CONDITIONS
ICES
VCE = BVCES
VCE = 0.8 BVCES
Collector-Emitter Saturation Voltage
VCE(SAT)
Gate-Emitter Threshold Voltage
IC = IC90, VGE = 15V
TYP
MAX
UNITS
600
-
-
V
TC =
+25oC
-
-
1.0
µA
TC =
+125oC
-
-
4.0
mA
TC =
+25oC
-
1.9
2.5
V
TC =
+125oC
-
2.1
2.7
V
3.0
4.5
6.0
V
IC = 250µA, VCE = VGE, TC = +25oC
VGE(TH)
MIN
Gate-Emitter Leakage Current
IGES
VGE = ±20V
-
-
±500
nA
Gate-Emitter Plateau Voltage
VGEP
IC = IC90, VCE = 0.5 BVCES
-
7.2
-
V
IC = IC90,
VCE = 0.5 BVCES
VGE = 15V
-
45
60
nC
VGE = 20V
-
70
90
nC
-
100
-
ns
-
150
-
ns
On-State Gate Charge
QG(ON)
Current Turn-On Delay Time
tD(ON)I
Current Rise Time
L = 500µH, IC = IC90, RG = 25Ω,
VGE = 15V, TJ = +150oC,
VCE = 0.8 BVCES
tRI
Current Turn-Off
tD(OFF)I
-
430
600
ns
Current Fall Time
tFI
-
430
600
ns
Turn-Off Energy (Note 1)
WOFF
-
1.8
-
mJ
Thermal Resistance IGBT
RθJC
-
-
1.67
oC/W
NOTE:
1. Turn-off Energy Loss (WOFF) is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse and
ending at the point where the collector current equals zero (ICE = 0A). The HGTP12N60D1 was tested per JEDEC standard No. 24-1
Method for Measurement of Power Device Turn-off Switching Loss. This test method produces the true total Turn-off Energy Loss.
Typical Performance Curves
20
PULSE DURATION = 250µs
DUTY CYCLE < 0.5%
VCE = 10V
16
ICE, COLLECTOR-EMITTER CURRENT (A)
ICE, COLLECTOR-EMITTER CURRENT (A)
20
12
8
TC = +150oC
TC =
4
+25oC
TC = -40oC
0
PULSE DURATION = 250µs
DUTY CYCLE < 0.5%
TC = +25oC
VGE = 10V
VGE = 7.5V
15
VGE = 15V
VGE = 7.0V
10
VGE = 6.5V
5
VGE = 5.7V
VGE = 6.0V
0
0
2
4
6
8
10
0
1
2
3
4
VGE, COLLECTOR-EMITTER VOLTAGE (V)
VGE, GATE-EMITTER VOLTAGE (V)
FIGURE 1. TRANSFER CHARACTERISTICS (TYPICAL)
FIGURE 2. SATURATION CHARACTERISTICS (TYPICAL)
3-39
5
HGTP12N60D1
Typical Performance Curves (Continued)
1200
25
VCE = 480V, VGE = 10V AND 15V
TJ = +150oC, RGE = 25Ω, L = 500µH
1000
20
tFI, FALL TIME (ns)
15
10
800
600
400
5
200
0
+25
0
+50
+75
+100
+125
1
+150
10
FIGURE 3. DC COLLECTOR CURRENT vs CASE TEMPERATURE
FIGURE 4. FALL TIME vs COLLECTOR-EMITTER CURRENT
VCE, COLLECTOR-EMITTER VOLTAGE (V)
3000
f = 1MHz
C, CAPACITANCE (pF)
2500
2000
1500
CISS
1000
COSS
500
CRSS
0
0
5
10
15
20
10
600
VCC = BVCES
7.5
300
2
VGE = 15V
1
0
0.25 BVCES
0.25 BVCES
5.0
0
0
IG(REF)
IG(ACT)
TIME (µs)
80
IG(REF)
IG(ACT)
FIGURE 6. NORMALIZED SWITCHING WAVEFORMS AT CONSTANT GATE CURRENT. (REFER TO APPLICATION
NOTES AN7254 AND AN7260)
WOFF , TURN-OFF SWITCHING LOSS (mJ)
VCE(ON), SATURATION VOLTAGE (V)
VGE = 10V
0.50 BVCES
2.5
5.0
3
0.75 BVCES
0.50 BVCES
RL = 60Ω
IG(REF) = 0.868mA
VGE = 10V
20
TJ = +150oC
0.75 BVCES
150
25
FIGURE 5. CAPACITANCE vs COLLECTOR-EMITTER VOLTAGE
VCC = BVCES
450
VCE, COLLECTOR-EMITTER VOLTAGE (V)
4
20
ICE, COLLECTOR-EMITTER CURRENT (A)
TJ , CASE TEMPERATURE (oC)
VGE, GATE-EMITTER VOLTAGE (V)
ICE, DC COLLECTOR CURRENT (A)
VGE = 15V
TJ = +150oC, VGE = 10V
RGE = 25Ω, L = 500µH
1.0
VCE = 480V
VCE = 240V
0.1
1
10
20
1
ICE, COLLECTOR-EMITTER CURRENT (A)
FIGURE 7. SATURATION VOLTAGE vs COLLECTOR-EMITTER
CURRENT
3-40
10
ICE, COLLECTOR-EMITTER CURRENT (A)
20
FIGURE 8. TURN-OFF SWITCHING LOSS vs COLLECTOREMITTER CURRENT
HGTP12N60D1
Typical Performance Curves (Continued)
1000
100
fOP , OPERATING FREQUENCY (kHz)
tD(OFF)I , TURN-OFF DELAY (ns)
TJ = +150oC
RGE = 25Ω
L = 500µH
VCE = 240V, VGE = 10V
VCE = 240V, VGE = 15V
VCE = 480V, VGE = 10V
VCE = 480V, VGE = 15V
10
TJ = +150oC, TC = +100oC
RG = 25Ω, L = 500µH
fMAX1 = 0.05/tD(OFF)I
fMAX2 = (PD - PC)/WOFF
PC = DUTY FACTOR = 50%
RθJC = 1.67oC/W
VCE = 480V, VGE = 10V AND 15V
VCE = 240V, VGE = 10V AND 15V
1
100
1
10
1
10
30
ICE, COLLECTOR-EMITTER CURRENT (A)
NOTE:
PD = ALLOWABLE DISSIPATION PC = CONDUCTION DISSIPATION
20
ICE, COLLECTOR-EMITTER CURRENT (A)
FIGURE 9. TURN-OFF DELAY vs COLLECTOR-EMITTER
CURRENT
FIGURE 10. OPERATING FREQUENCY vs COLLECTOREMITTER CURRENT AND VOLTAGE
Operating Frequency Information
Operating frequency information for a typical device (Figure
10) is presented as a guide for estimating device performance
for a specific application. Other typical frequency vs collector
current (ICE) plots are possible using the information shown
for a typical unit in Figures 7, 8 and 9. The operating
frequency plot (Figure 10) of a typical device shows fMAX1 or
fMAX2 whichever is smaller at each point. The information is
based on measurements of a typical device and is bounded
by the maximum rated junction temperature.
fMAX1 is defined by fMAX1 = 0.05/tD(OFF)I. tD(OFF)I deadtime
(the denominator) has been arbitrarily held to 10% of the onstate time for a 50% duty factor. Other definitions are possible.
tD(OFF)I is defined as the time between the 90% point of the
trailing edge of the input pulse and the point where the
collector current falls to 90% of its maximum value. Device
turn-off delay can establish an additional frequency limiting
condition for an application other than TJMAX. tD(OFF)I is
important when controlling output ripple under a lightly loaded
condition.
fMAX2 is defined by fMAX2 = (PD - PC)/WOFF. The allowable
dissipation (PD) is defined by PD = (TJMAX - TC)/RθJC. The sum
of device switching and conduction losses must not exceed PD.
A 50% duty factor was used (Figure 10) and the conduction
losses (PC) are approximated by PC = (VCE • ICE)/2. WOFF is
defined as the integral of the instantaneous power loss starting
at the trailing edge of the input pulse and ending at the point
where the collector current equals zero (ICE = 0A).
The switching power loss (Figure 10) is defined as fMAX2 •
WOFF. Turn-on switching losses are not included because they
can be greatly influenced by external circuit conditions and components.
All Intersil semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certification.
Intersil products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time without
notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate
and reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which
may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries.
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