RoHS 2SD1802 0. 5 1¡ À 0 . 03 À. 10 5. 50¡ 0 5¡ ã 5¡ ã 7. 70 0. 80¡ À 0. 0 5 0. 6 0¡ À 0. 0 5 1 W (Tamb=25℃) 2. 3 0¡ À 0. 05 2. 3 0¡ À 0. 0 5 1 . 20 0. 51 ¡ À 0 . 03 123 2. COLLECTOR 6. 50¡ À 0 . 15 2. 30¡ À 0 . 10 5. 30¡ 0 À. 10 Collector current ICM: 3 A Collector-base voltage V(BR)CBO: 60 V Operating and storage junction temperature range 0. 51¡ À 0 . 05 3. EMITTER Parameter V(BR)CBO Collector-emitter breakdown voltage V(BR)CEO Emitter-base breakdown voltage V(BR)EBO Collector cut-off current À. 20 9. 70¡ 0 À. 10 0. 75¡ 0 IC 0. 60¡ 0 À. 10 2. 30¡ À 0 . 10 À. 15 1. 60¡ 0 C 2. 30¡ 0 À. 10 1. 20 5¡ ã 0¡ ¡ ã9 «¡ ã 0. 51 unless otherwise specified) Symbol Collector-base breakdown voltage O 5¡ ã 0. 80¡ 0 À. 10 TJ, Tstg: -55℃ to +150℃ ELECTRICAL CHARACTERISTICS (Tamb=25℃ 5¡ ã 0. 51¡ À 0 . 10 0¡ 0 « . 10 À. 10 5. 50¡ 0 PCM: 1. BASE 0. 6 FEATURES Power dissipation D T ,. L 5¡ ã 14. 70 TRANSISTOR (NPN) 2 . 30¡ À 0. 05 5. 3 0¡ À 0. 05 À. 20 2. 70¡ 0 2SD1802 6. 5 0¡ À 0. 10 TO-251 TO-252-2 Test R T N conditions O MIN TYP MAX UNIT Ic=10µAµ, IE=0 60 V Ic=1mA, IB=0 50 V IE=10µA, IC=0 6 V VCB=40V, IE=0 1 µA IEBO VEB=4V, IC=0 1 µA hFE(1) VCE=2V, IC=100mA 100 hFE(2) VCE=2V, IC=3A 35 Collector-emitter saturation voltage VCE(sat) IC=2A, IB=100mA 0.5 V Base-emitter saturation voltage VBE(sat) IC=2A, IB=100mA 1.2 V fT VCE=10V, IC=50mA 150 MHz Collector output capacitance Cob VCB=10V, IE=0,f=1MHz 25 pF Turn-off time ton ICBO C E L Emitter cut-off current DC current gain J E E Transition frequency W Fall time tf Storage time ts 560 70 Vcc=25V, Ic=1A nS 650 IB1=-IB2=0.1A 35 CLASSIFICATION OF hFE(1) Rank Range R S T U 100-200 140-280 200-400 280-560 Marking WEJ ELECTRONIC CO. Http:// www.wej.cn E-mail:[email protected] 2SD1802 R T J E O IC C D T ,. L O N C E L E W WEJ ELECTRONIC CO. Http:// www.wej.cn E-mail:[email protected]