WINNERJOIN 2SD1802

RoHS
2SD1802
0. 5 1¡ À
0 . 03
À. 10
5. 50¡ 0
5¡ ã
5¡ ã
7. 70
0. 80¡ À
0. 0 5
0. 6 0¡ À
0. 0 5
1
W (Tamb=25℃)
2. 3 0¡ À
0. 05
2. 3 0¡ À
0. 0 5
1 . 20
0. 51 ¡ À
0 . 03
123
2. COLLECTOR
6. 50¡ À
0 . 15
2. 30¡ À
0 . 10
5. 30¡ 0
À. 10
Collector current
ICM:
3
A
Collector-base voltage
V(BR)CBO:
60
V
Operating and storage junction temperature range
0. 51¡ À
0 . 05
3. EMITTER
Parameter
V(BR)CBO
Collector-emitter breakdown voltage
V(BR)CEO
Emitter-base breakdown voltage
V(BR)EBO
Collector cut-off current
À. 20
9. 70¡ 0
À. 10
0. 75¡ 0
IC
0. 60¡ 0
À. 10
2. 30¡ À
0 . 10
À. 15
1. 60¡ 0
C
2. 30¡ 0
À. 10
1. 20
5¡ ã
0¡ ¡ ã9
«¡ ã
0. 51
unless otherwise specified)
Symbol
Collector-base breakdown voltage
O
5¡ ã
0. 80¡ 0
À. 10
TJ, Tstg: -55℃ to +150℃
ELECTRICAL CHARACTERISTICS (Tamb=25℃
5¡ ã
0. 51¡ À
0 . 10
0¡ 0
« . 10
À. 10
5. 50¡ 0
PCM:
1. BASE
0. 6
FEATURES
Power dissipation
D
T
,. L
5¡ ã
14. 70
TRANSISTOR (NPN)
2 . 30¡ À
0. 05
5. 3 0¡ À
0. 05
À. 20
2. 70¡ 0
2SD1802
6. 5 0¡ À
0. 10
TO-251
TO-252-2
Test
R
T
N
conditions
O
MIN
TYP
MAX
UNIT
Ic=10µAµ, IE=0
60
V
Ic=1mA, IB=0
50
V
IE=10µA, IC=0
6
V
VCB=40V, IE=0
1
µA
IEBO
VEB=4V, IC=0
1
µA
hFE(1)
VCE=2V, IC=100mA
100
hFE(2)
VCE=2V, IC=3A
35
Collector-emitter saturation voltage
VCE(sat)
IC=2A, IB=100mA
0.5
V
Base-emitter saturation voltage
VBE(sat)
IC=2A, IB=100mA
1.2
V
fT
VCE=10V, IC=50mA
150
MHz
Collector output capacitance
Cob
VCB=10V, IE=0,f=1MHz
25
pF
Turn-off time
ton
ICBO
C
E
L
Emitter cut-off current
DC current gain
J
E
E
Transition frequency
W
Fall time
tf
Storage time
ts
560
70
Vcc=25V, Ic=1A
nS
650
IB1=-IB2=0.1A
35
CLASSIFICATION OF hFE(1)
Rank
Range
R
S
T
U
100-200
140-280
200-400
280-560
Marking
WEJ ELECTRONIC CO.
Http:// www.wej.cn
E-mail:[email protected]
2SD1802
R
T
J
E
O
IC
C
D
T
,. L
O
N
C
E
L
E
W
WEJ ELECTRONIC CO.
Http:// www.wej.cn
E-mail:[email protected]