AOH3254 150V N-Channel MOSFET General Description Product Summary VDS • Trench Power MV MOSFET technology • Low RDS(ON) • Low Gate Charge • Optimized for fast-switching applications Applications ID (at VGS=10V) 150V 5A RDS(ON) (at VGS=10V) < 63mΩ RDS(ON) (at VGS=4.5V) < 77mΩ 100% UIS Tested 100% Rg Tested • Synchronus Rectification in DC/DC and AC/DC Converters • Industrial and Motor Drive applications SOT223 Top View D Bottom View D D G S G D D S G S Orderable Part Number Package Type Form Minimum Order Quantity AOH3254 SOT223 Tape & Reel 2500 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Drain-Source Voltage Symbol VDS VGS Gate-Source Voltage Continuous Drain Current Pulsed Drain Current TA=25°C Avalanche energy L=0.3mH VDS Spike 10µs TA=25°C Power Dissipation B C Junction and Storage Temperature Range Thermal Characteristics Parameter A Maximum Junction-to-Ambient AD Maximum Junction-to-Ambient Maximum Junction-to-Lead Rev.1.0: May 2015 Steady-State Steady-State A IAS 15 A EAS 34 mJ VSPIKE 180 V 4.1 W 2.6 TJ, TSTG Symbol t ≤ 10s V 20 PD TA=70°C ±20 4 IDM Avalanche Current C Units V 5 ID TA=70°C C Maximum 150 RθJA RθJL -55 to 150 Typ 25 50 10 www.aosmd.com °C Max 30 60 15 Units °C/W °C/W °C/W Page 1 of 5 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS Drain-Source Breakdown Voltage BVDSS Conditions Min ID=250µA, VGS=0V 150 Zero Gate Voltage Drain Current IGSS VGS(th) Gate-Body leakage current VDS=0V, VGS=±20V Gate Threshold Voltage VDS=VGS, ID=250µA 1.7 TJ=125°C VGS=4.5V, ID=2A gFS Forward Transconductance VSD Diode Forward Voltage IS=1A,VGS=0V IS Maximum Body-Diode Continuous Current DYNAMIC PARAMETERS Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance µA 5 VGS=10V, ID=5A VDS=5V, ID=5A Units 1 TJ=55°C Static Drain-Source On-Resistance Max V VDS=150V, VGS=0V IDSS RDS(ON) Typ ±100 nA 2.15 2.7 V 52 63 102 123 60 77 mΩ 1 V 5 A 17 0.72 mΩ S 675 VGS=0V, VDS=75V, f=1MHz f=1MHz 1.4 pF 78 pF 4 pF 2.9 4.4 Ω SWITCHING PARAMETERS Qg(10V) Total Gate Charge 11.5 20 nC Qg(4.5V) Total Gate Charge 5.5 10 nC VGS=10V, VDS=75V, ID=5A Qgs Gate Source Charge 2 nC Qgd Gate Drain Charge 2.5 nC tD(on) Turn-On DelayTime 6 ns tr Turn-On Rise Time 3 ns tD(off) Turn-Off DelayTime 20 ns tf trr Turn-Off Fall Time Qrr VGS=10V, VDS=75V, RL=15Ω, RGEN=3Ω 5 ns IF=5A, dI/dt=500A/µs 37 Body Diode Reverse Recovery Charge IF=5A, dI/dt=500A/µs 210 ns nC Body Diode Reverse Recovery Time A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The value in any given application depends on the user's specific board design. B. The power dissipation PD is based on TJ(MAX)=150°C, using ≤ 10s junction-to-ambient thermal resistance. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep initialTJ=25°C. D. The RθJA is the sum of the thermal impedance from junction to lead RθJL and lead to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-ambient thermal impedance which is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating. THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Rev.1.0: May 2015 www.aosmd.com Page 2 of 5 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 40 40 10V 4V 30 ID(A) 30 ID (A) VDS=5V 4.5V 20 3.5V 20 125°C 10 10 25°C VGS=3V 0 0 0 1 2 3 4 1 5 2 3 4 5 VGS(Volts) Figure 2: Transfer Characteristics (Note E) VDS (Volts) Figure 1: On-Region Characteristics (Note E) 80 2.4 RDS(ON) (mΩ) Normalized On-Resistance 2.2 70 VGS=4.5V 60 50 VGS=10V 40 2 VGS=10V ID=5A 1.8 1.6 1.4 VGS=4.5V ID=2A 1.2 1 0.8 30 0 3 6 9 12 0 15 25 50 75 100 125 150 175 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature (Note E) ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage (Note E) 150 1.0E+01 ID=5A 1.0E+00 125°C 110 125°C 1.0E-01 IS (A) RDS(ON) (mΩ) 130 90 70 1.0E-02 25°C 1.0E-03 50 1.0E-04 25°C 30 1.0E-05 2 4 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage (Note E) Rev.1.0: May 2015 www.aosmd.com 0.0 0.2 0.4 0.6 0.8 1.0 VSD (Volts) Figure 6: Body-Diode Characteristics (Note E) Page 3 of 5 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10 1500 VDS=75V ID=5A Capacitance (pF) VGS (Volts) 8 6 4 1000 Ciss 500 2 Coss Crss 0 0 0 5 10 15 0 Qg (nC) Figure 7: Gate-Charge Characteristics 50 75 100 125 150 VDS (Volts) Figure 8: Capacitance Characteristics 100.0 1000 TJ(Max)=150°C TA=25°C 10µs 10µs 100µs 10.0 RDS(ON) limited 100 1ms 1.0 10ms Power (W) ID (Amps) 25 10 0.1 TJ(Max)=150°C TA=25°C 0.0 0.01 ZθJA Normalized Transient Thermal Resistance 10 1 DC 1 0.0001 0.001 0.01 0.1 1 10 100 1000 VDS (Volts) VGS> or equal to 4.5V Figure 9: Maximum Forward Biased Safe Operating Area (Note F) 0.1 1 10 100 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note F) D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse RθJA=60°C/W 0.1 PDM 0.01 Single Pulse Ton T 0.001 1E-05 0.0001 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) Rev.1.0: May 2015 www.aosmd.com Page 4 of 5 Gate Charge Test Circuit & Waveform Vgs Qg 10V + + Vds VDC - Qgs Qgd VDC - DUT Vgs Ig Charge Resistive Switching Test Circuit & Waveforms RL Vds Vds DUT Vgs 90% + Vdd VDC - Rg 10% Vgs Vgs td(on) tr td(off) ton tf toff Unclamped Inductive Switching (UIS) Test Circuit & Waveforms L 2 EAR= 1/2 LIAR Vds BVDSS Vds Id + Vdd Vgs Vgs I AR VDC - Rg Id DUT Vgs Vgs Diode Recovery Test Circuit & Waveforms Q rr = - Idt Vds + DUT Vds - Isd Vgs Ig Rev.1.0: May 2015 Vgs L Isd + Vdd t rr dI/dt I RM Vdd VDC - IF Vds www.aosmd.com Page 5 of 5