Datasheet

AOH3254
150V N-Channel MOSFET
General Description
Product Summary
VDS
• Trench Power MV MOSFET technology
• Low RDS(ON)
• Low Gate Charge
• Optimized for fast-switching applications
Applications
ID (at VGS=10V)
150V
5A
RDS(ON) (at VGS=10V)
< 63mΩ
RDS(ON) (at VGS=4.5V)
< 77mΩ
100% UIS Tested
100% Rg Tested
• Synchronus Rectification in DC/DC and AC/DC Converters
• Industrial and Motor Drive applications
SOT223
Top View
D
Bottom View
D
D
G
S
G
D
D
S
G
S
Orderable Part Number
Package Type
Form
Minimum Order Quantity
AOH3254
SOT223
Tape & Reel
2500
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Drain-Source Voltage
Symbol
VDS
VGS
Gate-Source Voltage
Continuous Drain
Current
Pulsed Drain Current
TA=25°C
Avalanche energy
L=0.3mH
VDS Spike
10µs
TA=25°C
Power Dissipation B
C
Junction and Storage Temperature Range
Thermal Characteristics
Parameter
A
Maximum Junction-to-Ambient
AD
Maximum Junction-to-Ambient
Maximum Junction-to-Lead
Rev.1.0: May 2015
Steady-State
Steady-State
A
IAS
15
A
EAS
34
mJ
VSPIKE
180
V
4.1
W
2.6
TJ, TSTG
Symbol
t ≤ 10s
V
20
PD
TA=70°C
±20
4
IDM
Avalanche Current C
Units
V
5
ID
TA=70°C
C
Maximum
150
RθJA
RθJL
-55 to 150
Typ
25
50
10
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°C
Max
30
60
15
Units
°C/W
°C/W
°C/W
Page 1 of 5
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
STATIC PARAMETERS
Drain-Source Breakdown Voltage
BVDSS
Conditions
Min
ID=250µA, VGS=0V
150
Zero Gate Voltage Drain Current
IGSS
VGS(th)
Gate-Body leakage current
VDS=0V, VGS=±20V
Gate Threshold Voltage
VDS=VGS, ID=250µA
1.7
TJ=125°C
VGS=4.5V, ID=2A
gFS
Forward Transconductance
VSD
Diode Forward Voltage
IS=1A,VGS=0V
IS
Maximum Body-Diode Continuous Current
DYNAMIC PARAMETERS
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Rg
Gate resistance
µA
5
VGS=10V, ID=5A
VDS=5V, ID=5A
Units
1
TJ=55°C
Static Drain-Source On-Resistance
Max
V
VDS=150V, VGS=0V
IDSS
RDS(ON)
Typ
±100
nA
2.15
2.7
V
52
63
102
123
60
77
mΩ
1
V
5
A
17
0.72
mΩ
S
675
VGS=0V, VDS=75V, f=1MHz
f=1MHz
1.4
pF
78
pF
4
pF
2.9
4.4
Ω
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge
11.5
20
nC
Qg(4.5V) Total Gate Charge
5.5
10
nC
VGS=10V, VDS=75V, ID=5A
Qgs
Gate Source Charge
2
nC
Qgd
Gate Drain Charge
2.5
nC
tD(on)
Turn-On DelayTime
6
ns
tr
Turn-On Rise Time
3
ns
tD(off)
Turn-Off DelayTime
20
ns
tf
trr
Turn-Off Fall Time
Qrr
VGS=10V, VDS=75V, RL=15Ω,
RGEN=3Ω
5
ns
IF=5A, dI/dt=500A/µs
37
Body Diode Reverse Recovery Charge IF=5A, dI/dt=500A/µs
210
ns
nC
Body Diode Reverse Recovery Time
A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The
value in any given application depends on the user's specific board design.
B. The power dissipation PD is based on TJ(MAX)=150°C, using ≤ 10s junction-to-ambient thermal resistance.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep
initialTJ=25°C.
D. The RθJA is the sum of the thermal impedance from junction to lead RθJL and lead to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-ambient thermal impedance which is measured with the device mounted on 1in2 FR-4 board with
2oz. Copper, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating.
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev.1.0: May 2015
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Page 2 of 5
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
40
40
10V
4V
30
ID(A)
30
ID (A)
VDS=5V
4.5V
20
3.5V
20
125°C
10
10
25°C
VGS=3V
0
0
0
1
2
3
4
1
5
2
3
4
5
VGS(Volts)
Figure 2: Transfer Characteristics (Note E)
VDS (Volts)
Figure 1: On-Region Characteristics (Note E)
80
2.4
RDS(ON) (mΩ)
Normalized On-Resistance
2.2
70
VGS=4.5V
60
50
VGS=10V
40
2
VGS=10V
ID=5A
1.8
1.6
1.4
VGS=4.5V
ID=2A
1.2
1
0.8
30
0
3
6
9
12
0
15
25
50
75
100
125
150
175
Temperature (°C)
Figure 4: On-Resistance vs. Junction Temperature
(Note E)
ID (A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage (Note E)
150
1.0E+01
ID=5A
1.0E+00
125°C
110
125°C
1.0E-01
IS (A)
RDS(ON) (mΩ)
130
90
70
1.0E-02
25°C
1.0E-03
50
1.0E-04
25°C
30
1.0E-05
2
4
6
8
10
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note E)
Rev.1.0: May 2015
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0.0
0.2
0.4
0.6
0.8
1.0
VSD (Volts)
Figure 6: Body-Diode Characteristics (Note E)
Page 3 of 5
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
1500
VDS=75V
ID=5A
Capacitance (pF)
VGS (Volts)
8
6
4
1000
Ciss
500
2
Coss
Crss
0
0
0
5
10
15
0
Qg (nC)
Figure 7: Gate-Charge Characteristics
50
75
100
125
150
VDS (Volts)
Figure 8: Capacitance Characteristics
100.0
1000
TJ(Max)=150°C
TA=25°C
10µs
10µs
100µs
10.0
RDS(ON)
limited
100
1ms
1.0
10ms
Power (W)
ID (Amps)
25
10
0.1
TJ(Max)=150°C
TA=25°C
0.0
0.01
ZθJA Normalized Transient
Thermal Resistance
10
1
DC
1
0.0001 0.001 0.01
0.1
1
10
100
1000
VDS (Volts)
VGS> or equal to 4.5V
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
0.1
1
10
100 1000
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-toAmbient (Note F)
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
RθJA=60°C/W
0.1
PDM
0.01
Single Pulse
Ton
T
0.001
1E-05
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
Rev.1.0: May 2015
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Page 4 of 5
Gate Charge Test Circuit & Waveform
Vgs
Qg
10V
+
+ Vds
VDC
-
Qgs
Qgd
VDC
-
DUT
Vgs
Ig
Charge
Resistive Switching Test Circuit & Waveforms
RL
Vds
Vds
DUT
Vgs
90%
+ Vdd
VDC
-
Rg
10%
Vgs
Vgs
td(on)
tr
td(off)
ton
tf
toff
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
L
2
EAR= 1/2 LIAR
Vds
BVDSS
Vds
Id
+ Vdd
Vgs
Vgs
I AR
VDC
-
Rg
Id
DUT
Vgs
Vgs
Diode Recovery Test Circuit & Waveforms
Q rr = - Idt
Vds +
DUT
Vds -
Isd
Vgs
Ig
Rev.1.0: May 2015
Vgs
L
Isd
+ Vdd
t rr
dI/dt
I RM
Vdd
VDC
-
IF
Vds
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Page 5 of 5