AOD2606/AOI2606 60V N-Channel MOSFET General Description Product Summary VDS • Trench Power MV MOSFET technology • Low RDS(ON) • Low Gate Charge • Optimized for fast-switching applications Applications ID (at VGS=10V) 60V 46A RDS(ON) (at VGS=10V) < 6.8mΩ 100% UIS Tested 100% Rg Tested • Synchronous Rectification in DC/DC and AC/DC Converters • Industrial and Motor Drive applications TO-251A IPAK TO-252 DPAK Top View Top View Bottom View D Bottom View D D D D G S S G G D S S D G G S Orderable Part Number Package Type Form Minimum Order Quantity AOD2606 AOI2606 TO-252 TO-251A Tape & Reel Tube 2500 4000 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Drain-Source Voltage Symbol VDS Gate-Source Voltage C C Avalanche energy L=0.1mH VDS Spike 10µs TC=25°C Power Dissipation B C Junction and Storage Temperature Range Thermal Characteristics Parameter A Maximum Junction-to-Ambient AD Maximum Junction-to-Ambient Maximum Junction-to-Case Rev.1.0: December 2014 IAS 60 A EAS 180 mJ 72 V 150 2.5 Steady-State Steady-State W 1.6 TJ, TSTG Symbol t ≤ 10s W 75 PDSM TA=70°C A 11 PD TA=25°C Power Dissipation A A 14 VSPIKE TC=100°C V 184 IDSM TA=70°C ±20 36 IDM TA=25°C Continuous Drain Current Units V 46 ID TC=100°C Pulsed Drain Current Avalanche Current VGS TC=25°C Continuous Drain Current G Maximum 60 RθJA RθJC °C -55 to 175 Typ 16 41 0.8 www.aosmd.com Max 20 50 1.0 Units °C/W °C/W °C/W Page 1 of 6 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS Drain-Source Breakdown Voltage BVDSS Conditions Min ID=250µA, VGS=0V Typ Zero Gate Voltage Drain Current IGSS VGS(th) Gate-Body leakage current VDS=0V, VGS=±20V Gate Threshold Voltage VDS=VGS, ID=250µA V 1 TJ=55°C 2.5 VGS=10V, ID=20A ±100 nA 3.0 3.5 V 5.6 6.8 8.8 10.6 Static Drain-Source On-Resistance gFS Forward Transconductance VDS=5V, ID=20A 75 VSD Diode Forward Voltage IS=1A,VGS=0V 0.7 IS Maximum Body-Diode Continuous Current G TJ=125°C DYNAMIC PARAMETERS Input Capacitance Ciss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance µA 5 RDS(ON) Coss Units 60 VDS=60V, VGS=0V IDSS Max S 1 V 46 A 4050 VGS=0V, VDS=30V, f=1MHz f=1MHz pF 345 pF 16.8 pF 0.65 1.0 Ω SWITCHING PARAMETERS Qg(10V) Total Gate Charge 53 75 nC Qg(4.5V) Total Gate Charge 22 31 Qgs Gate Source Charge Qgd tD(on) tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf trr Turn-Off Fall Time Qrr VGS=10V, VDS=30V, ID=20A 0.3 mΩ nC 17 nC Gate Drain Charge 5 nC Turn-On DelayTime 18 ns 20 ns VGS=10V, VDS=30V, RL=1.5Ω, RGEN=3Ω 33 ns 4 ns IF=20A, dI/dt=500A/µs 26 Body Diode Reverse Recovery Charge IF=20A, dI/dt=500A/µs 125 ns nC Body Diode Reverse Recovery Time A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The Power dissipation PDSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user's specific board design, and the maximum temperature of 175°C may be used if the PCB allows it. B. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Single pulse width limited by junction temperature TJ(MAX)=175°C. D. The RθJA is the sum of the thermal impedance from junction to case RθJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of TJ(MAX)=175°C. The SOA curve provides a single pulse rating. G. The maximum current rating is package limited. H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Rev.1.0: December 2014 www.aosmd.com Page 2 of 6 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 120 10V 120 6V VDS=5V 100 100 80 80 ID(A) ID (A) 5V 60 40 60 40 4.5V 125°C 20 20 25°C VGS=4V 0 0 0 1 2 3 4 2 5 3 5 6 VGS(Volts) Figure 2: Transfer Characteristics (Note E) VDS (Volts) Figure 1: On-Region Characteristics (Note E) 10 Normalized On-Resistance 2 8 RDS(ON) (mΩ) 4 6 VGS=10V 4 2 1.8 VGS=10V ID=20A 1.6 1.4 1.2 1 0.8 0 0 5 10 15 20 25 0 30 25 50 75 100 125 150 175 200 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature (Note E) ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage (Note E) 16 1.0E+02 ID=20A 14 1.0E+01 125°C 1.0E+00 125°C 10 IS (A) RDS(ON) (mΩ) 12 8 1.0E-01 25°C 1.0E-02 6 1.0E-03 25°C 4 1.0E-04 2 1.0E-05 2 4 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage (Note E) Rev.1.0: December 2014 www.aosmd.com 0.0 0.2 0.4 0.6 0.8 1.0 1.2 VSD (Volts) Figure 6: Body-Diode Characteristics (Note E) Page 3 of 6 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10 5000 VDS=30V ID=20A Ciss 4000 Capacitance (pF) VGS (Volts) 8 6 4 2 3000 2000 1000 Coss Crss 0 0 0 10 20 30 40 50 60 0 Qg (nC) Figure 7: Gate-Charge Characteristics 30 40 50 60 500 TJ(Max)=175°C TC=25°C 10µs 10µs RDS(ON) limited 400 100µs 10.0 Power (W) 100.0 ID (Amps) 20 VDS (Volts) Figure 8: Capacitance Characteristics 1000.0 1ms 10ms DC 1.0 TJ(Max)=175°C TC=25°C 0.1 0.0 0.01 300 200 100 0.1 1 10 VDS (Volts) 100 0 0.0001 0.001 0.01 1000 0.1 1 10 100 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toCase (Note F) VGS> or equal to 4.5V Figure 9: Maximum Forward Biased Safe Operating Area (Note F) 10 ZθJC Normalized Transient Thermal Resistance 10 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse D=Ton/T TJ,PK=TC+PDM.ZθJC.RθJC RθJC=1.0°C/W 1 0.1 PDM Single Pulse Ton T 0.01 1E-05 0.0001 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) Rev.1.0: December 2014 www.aosmd.com Page 4 of 6 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 200 TA=25°C TA=100°C Power Dissipation (W) IAR (A) Peak Avalanche Current 1000 100 TA=150°C TA=125°C 10 1 150 100 50 0 1 10 100 1000 0 25 75 100 125 150 TCASE (°C) Figure 13: Power De-rating (Note F) Time in avalanche, tA (µs) Figure 12: Single Pulse Avalanche capability (Note C) 50 175 10000 60 TA=25°C 50 Power (W) Current rating ID(A) 1000 40 30 100 20 10 10 0 0 25 50 75 100 125 150 175 1 1E-05 0.1 10 1000 Pulse Width (s) Figure 15: Single Pulse Power Rating Junction-toAmbient (Note H) TCASE (°C) Figure 14: Current De-rating (Note F) ZθJA Normalized Transient Thermal Resistance 0.001 10 1 D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA RθJA=50°C/W In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 0.1 PD 0.01 Single Pulse Ton 0.001 0.0001 0.001 0.01 0.1 1 10 T 100 1000 Pulse Width (s) Figure 16: Normalized Maximum Transient Thermal Impedance (Note H) Rev.1.0: December 2014 www.aosmd.com Page 5 of 6 Gate Charge Test Circuit & Waveform Vgs Qg 10V + + Vds VDC - Qgs Qgd VDC - DUT Vgs Ig Charge Resistive Switching Test Circuit & Waveforms RL Vds Vds DUT Vgs 90% + Vdd VDC - Rg 10% Vgs Vgs td(on) tr td(off) ton tf toff Unclamped Inductive Switching (UIS) Test Circuit & Waveforms L 2 EAR= 1/2 LIAR Vds BVDSS Vds Id + Vdd Vgs Vgs I AR VDC - Rg Id DUT Vgs Vgs Diode Recovery Test Circuit & Waveforms Q rr = - Idt Vds + DUT Vds - Isd Vgs Ig Rev.1.0: December 2014 Vgs L Isd + Vdd t rr dI/dt I RM Vdd VDC - IF Vds www.aosmd.com Page 6 of 6